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1. 发明授权

US08648323B2 Nonvolatile memory device and method of fabricating the same 有权
标题翻译：非易失性存储器件及其制造方法
公开(公告)号：US08648323B2
公开(公告)日：2014-02-11
申请号：US12724732
申请日：2010-03-16
申请人： Kazuhiko Yamamoto , Takuya Konno , Takeshi Yamaguchi
发明人： Kazuhiko Yamamoto , Takuya Konno , Takeshi Yamaguchi
IPC分类号： H01L47/00
CPC分类号： B82Y10/00 , H01L27/2409 , H01L27/2463 , H01L45/04 , H01L45/065 , H01L45/1233 , H01L45/1246 , H01L45/1273 , H01L45/149 , H01L45/1608 , H01L51/0046 , H01L51/0048
摘要： A nonvolatile memory device includes: a substrate; a first electrode formed on the substrate; a resistance change layer formed on the first electrode, the resistance change layer containing conductive nano-material; a second electrode formed on the resistance change layer; and an insulating buffer layer disposed between the first electrode and the resistance change layer, the insulating buffer layer containing conductive material dispersed therein for assuring the electric conductivity between the first electrode and the resistance change layer.
摘要翻译：非易失性存储器件包括：衬底; 形成在所述基板上的第一电极; 形成在第一电极上的电阻变化层，电阻变化层包含导电纳米材料; 形成在电阻变化层上的第二电极; 以及设置在所述第一电极和所述电阻变化层之间的绝缘缓冲层，所述绝缘缓冲层包含分散在其中的导电材料，以确保所述第一电极和所述电阻变化层之间的导电性。

2. 发明申请

US20110049463A1 NONVOLATILE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：非易失性存储器件及其制造方法
公开(公告)号：US20110049463A1
公开(公告)日：2011-03-03
申请号：US12724732
申请日：2010-03-16
申请人： Kazuhiko YAMAMOTO , Takuya Konno , Takeshi Yamaguchi
发明人： Kazuhiko YAMAMOTO , Takuya Konno , Takeshi Yamaguchi
IPC分类号： H01L45/00 , H01L21/16
CPC分类号： B82Y10/00 , H01L27/2409 , H01L27/2463 , H01L45/04 , H01L45/065 , H01L45/1233 , H01L45/1246 , H01L45/1273 , H01L45/149 , H01L45/1608 , H01L51/0046 , H01L51/0048
摘要： A nonvolatile memory device includes: a substrate; a first electrode formed on the substrate; a resistance change layer formed on the first electrode, the resistance change layer containing conductive nano-material; a second electrode formed on the resistance change layer; and an insulating buffer layer disposed between the first electrode and the resistance change layer, the insulating buffer layer containing conductive material dispersed therein for assuring the electric conductivity between the first electrode and the resistance change layer.
摘要翻译：非易失性存储器件包括：衬底; 形成在所述基板上的第一电极; 形成在第一电极上的电阻变化层，电阻变化层包含导电纳米材料; 形成在电阻变化层上的第二电极; 以及设置在所述第一电极和所述电阻变化层之间的绝缘缓冲层，所述绝缘缓冲层包含分散在其中的导电材料，以确保所述第一电极和所述电阻变化层之间的导电性。

3. 发明授权

US08860000B2 Nonvolatile semiconductor memory device and method of manufacturing the same 有权
标题翻译：非易失性半导体存储器件及其制造方法
公开(公告)号：US08860000B2
公开(公告)日：2014-10-14
申请号：US13019630
申请日：2011-02-02
申请人： Kazuhiko Yamamoto , Takuya Konno
发明人： Kazuhiko Yamamoto , Takuya Konno
IPC分类号： H01L47/00 , H01L27/24 , H01L45/00
CPC分类号： H01L45/085 , H01L27/2409 , H01L27/2463 , H01L45/149 , H01L45/1658
摘要： A nonvolatile semiconductor memory device in accordance with an embodiment comprises a lower electrode layer, a variable resistance layer, and an upper electrode layer. The lower electrode layer is provided over a substrate. The variable resistance layer is provided on the lower electrode layer and is configured such that an electrical resistance of the variable resistance layer can be changed. The upper electrode layer is provided on the variable resistance layer. The variable resistance layer comprises a carbon nanostructure and metal atoms. The carbon nanostructure is stacked to have a plurality of gaps. The metal atoms are diffused into the gaps.
摘要翻译：根据实施例的非易失性半导体存储器件包括下电极层，可变电阻层和上电极层。下电极层设置在基板上。可变电阻层设置在下电极层上并且被配置为使得可变电阻层的电阻可以改变。上电极层设置在可变电阻层上。可变电阻层包括碳纳米结构和金属原子。碳纳米结构被堆叠以具有多个间隙。金属原子扩散到间隙中。

4. 发明申请

US20110198556A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：非易失性半导体存储器件及其制造方法
公开(公告)号：US20110198556A1
公开(公告)日：2011-08-18
申请号：US13019630
申请日：2011-02-02
申请人： Kazuhiko YAMAMOTO , Takuya Konno
发明人： Kazuhiko YAMAMOTO , Takuya Konno
IPC分类号： H01L47/00 , H01L21/44 , B82Y99/00 , B82Y40/00
CPC分类号： H01L45/085 , H01L27/2409 , H01L27/2463 , H01L45/149 , H01L45/1658
摘要： A nonvolatile semiconductor memory device in accordance with an embodiment comprises a lower electrode layer, a variable resistance layer, and an upper electrode layer. The lower electrode layer is provided over a substrate. The variable resistance layer is provided on the lower electrode layer and is configured such that an electrical resistance of the variable resistance layer can be changed. The upper electrode layer is provided on the variable resistance layer. The variable resistance layer comprises a carbon nanostructure and metal atoms. The carbon nanostructure is stacked to have a plurality of gaps. The metal atoms are diffused into the gaps.
摘要翻译：根据实施例的非易失性半导体存储器件包括下电极层，可变电阻层和上电极层。下电极层设置在基板上。可变电阻层设置在下电极层上并且被配置为使得可变电阻层的电阻可以改变。上电极层设置在可变电阻层上。可变电阻层包括碳纳米结构和金属原子。碳纳米结构被堆叠以具有多个间隙。金属原子扩散到间隙中。

5. 发明授权

US08729517B2 Nonvolatile semiconductor memory device and method for manufacturing nonvolatile semiconductor memory device 有权
标题翻译：用于制造非易失性半导体存储器件的非易失性半导体存储器件和方法
公开(公告)号：US08729517B2
公开(公告)日：2014-05-20
申请号：US13044951
申请日：2011-03-10
申请人： Takuya Konno , Kazuhiko Yamamoto
发明人： Takuya Konno , Kazuhiko Yamamoto
IPC分类号： H01L45/00
CPC分类号： H01L45/141 , H01L27/2409 , H01L27/2463 , H01L45/148 , H01L45/1608
摘要： According to one embodiment, a nonvolatile semiconductor memory device includes a first interconnect, a second interconnect and a resistance change layer. The first interconnect extends in a first direction on a major surface of a substrate. The second interconnect extends in a second direction non-parallel to the first direction. The resistance change layer includes a conductive nanomaterial, the resistance change layer located between the first interconnect and the second interconnect and being capable of reversibly changing between a first resistance state and a second resistance state by a voltage applied or a current supplied through the first interconnect and the second interconnect. The resistance change layer has a density varied along a third direction generally perpendicular to the first direction and the second direction.
摘要翻译：根据一个实施例，非易失性半导体存储器件包括第一互连，第二互连和电阻变化层。第一互连在衬底的主表面上沿第一方向延伸。第二互连在不平行于第一方向的第二方向上延伸。电阻变化层包括导电纳米材料，电阻变化层位于第一互连和第二互连之间，并且能够通过施加的电压或通过第一互连提供的电流在第一电阻状态和第二电阻状态之间可逆地改变和第二互连。电阻变化层的密度沿大致垂直于第一方向和第二方向的第三方向变化。

6. 发明授权

US08231934B2 Conductive paste for solar cell electrode 有权
标题翻译：太阳能电池电极导电膏
公开(公告)号：US08231934B2
公开(公告)日：2012-07-31
申请号：US12621729
申请日：2009-11-19
申请人： Norihiko Takeda , Takuya Konno
发明人： Norihiko Takeda , Takuya Konno
IPC分类号： B05D5/12 , H01L31/0224 , H01B1/08
CPC分类号： H01B1/22 , C03C8/18 , C03C8/22 , H01L31/022425 , H05K1/092 , Y02E10/50
摘要： To obtain low resistance and high adhesion at the same time in a solar cell electrode, a conductive paste is offered. A conductive paste for solar cell electrode contains conductive powder, organic medium and glass frit which is mixture of more than one kind of glass frit such as a mixture of glass frit containing at least PbO and glass frit containing at least Bi2O3.
摘要翻译：为了在太阳能电池电极中同时获得低电阻和高粘合性，提供导电膏。用于太阳能电池电极的导电浆料包含导电粉末，有机介质和玻璃料，其是多于一种玻璃料的混合物，例如至少含有PbO的玻璃料和至少含有Bi 2 O 3的玻璃料的混合物。

7. 发明授权

US07718093B2 Electroconductive thick film composition, electrode, and solar cell formed therefrom 有权
标题翻译：导电厚膜组合物，电极和由其形成的太阳能电池
公开(公告)号：US07718093B2
公开(公告)日：2010-05-18
申请号：US12037306
申请日：2008-02-26
申请人： Takuya Konno
发明人： Takuya Konno
IPC分类号： H01B1/22
CPC分类号： C03C14/006 , C03C8/10 , C03C8/18 , C03C2214/08 , C03C2214/16 , H01B1/22 , H01L31/022408 , H01L31/022425 , H05K1/092 , Y02E10/50
摘要： The electroconductive thick film paste of the present invention is a silver electroconductive paste, which includes silver particles, glass particles, and an organic vehicle, and is used in an electrode for connecting a back face terminal on the silicon substrate of a solar cell, and is characterized by the fact that the average particle diameter of said silver particles is 3.0-15.0 μm. The present invention is further directed to an electrode formed from the composition as detailed above and a solar cell comprising said electrode.
摘要翻译：本发明的导电性厚膜糊是含有银粒子，玻璃粒子和有机载体的银导电膏，用于连接太阳能电池的硅基板上的背面端子的电极和其特征在于所述银颗粒的平均粒径为3.0-15.0μm。本发明还涉及由上述组合物形成的电极和包括所述电极的太阳能电池。

8. 发明申请

US20080254567A1 Thick film conductive composition and processe for use in the manufacture of semiconductor device 失效
标题翻译：厚膜导电组合物和用于制造半导体器件的工艺
公开(公告)号：US20080254567A1
公开(公告)日：2008-10-16
申请号：US11786717
申请日：2007-04-12
申请人： Takuya Konno
发明人： Takuya Konno
IPC分类号： H01B1/22 , B32B15/04 , H01L31/0224 , B32B17/06
CPC分类号： H01L31/022425 , H01B1/16 , Y02E10/50
摘要： The present invention is directed to a thick film conductive composition comprising: a) electrically conductive silver powder; b) ZnO powder; c) lead-free glass frits wherein based on total glass frits: Bi2O3: >5 mol %, B2O3:
摘要翻译：本发明涉及一种厚膜导电组合物，其包含：a）导电银粉; b）ZnO粉末; c）基于总玻璃料的无铅玻璃料：Bi 2 O 3：5mol％，B 2 O _{3％：<15摩尔％，BaO：<5摩尔％，SrO：<5摩尔％，AL 2 2 3 3 <5摩尔％和d）有机介质，其中（ZnO的含量/银粉的含量）×100大于2.5。}

9. 发明授权

US07147804B2 Terminal electrode compositions for multilayer ceramic capacitors 失效
标题翻译：多层陶瓷电容器的端子电极组合物
公开(公告)号：US07147804B2
公开(公告)日：2006-12-12
申请号：US10671309
申请日：2003-09-25
申请人： Keiichiro Hayakawa , Takuya Konno , Hisashi Matsuno
发明人： Keiichiro Hayakawa , Takuya Konno , Hisashi Matsuno
IPC分类号： H01B1/22 , B05D5/12
CPC分类号： H01G4/2325
摘要： The present invention relates to terminal electrode compositions for multilayer ceramic capacitors. More specifically, it relates to terminal electrode compositions for multilayer ceramic capacitors, which compositions are made of a conductive-based powder and a glass frit and can be fired at a low temperature in a nitrogen atmosphere.
摘要翻译：本发明涉及多层陶瓷电容器的端子电极组合物。更具体地说，本发明涉及多层陶瓷电容器的端子电极组合物，该组合物由导电基粉末和玻璃料制成，并且可以在氮气气氛中在低温下烧制。

10. 发明申请

US20060202173A1 Terminal electrode compositions for multilayer ceramic capacitors 失效
标题翻译：多层陶瓷电容器的端子电极组合物
公开(公告)号：US20060202173A1
公开(公告)日：2006-09-14
申请号：US11430534
申请日：2006-05-09
申请人： Takuya Konno , Takayuki Kaneda
发明人： Takuya Konno , Takayuki Kaneda
IPC分类号： H01B1/22
CPC分类号： H01G4/30 , H01G4/2325
摘要： The present invention relates to terminal electrode compositions for multilayer ceramic capacitors. More specifically, it relates to terminal electrode compositions for multilayer ceramic capacitors, which compositions are made of a copper-based powder and an organic binder that can be fired at a low temperature in a nitrogen atmosphere.
摘要翻译：本发明涉及多层陶瓷电容器的端子电极组合物。更具体地说，本发明涉及多层陶瓷电容器的端子电极组合物，该组合物由可在氮气气氛中低温烧制的铜基粉末和有机粘合剂制成。

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