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1. 发明申请

US20070284670A1 Semiconductor device and fabrication method therefor 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20070284670A1
公开(公告)日：2007-12-13
申请号：US11715437
申请日：2007-03-08
申请人： Kazuhiko Yamamoto , Hiromasa Fujimoto , Takafumi Kotani
发明人： Kazuhiko Yamamoto , Hiromasa Fujimoto , Takafumi Kotani
IPC分类号： H01L29/78 , H01L21/8238
CPC分类号： H01L21/823443 , H01L21/82345 , H01L21/823835 , H01L21/823842
摘要： A semiconductor device has a transistor of a first conductivity type formed on a semiconductor substrate and having a first gate insulating film and a first gate electrode and a transistor of a second conductivity type having a second gate insulating film and a second gate electrode. The first gate electrode is a metal gate electrode having a metal film and the second gate electrode is a fully-silicided gate electrode made of a silicide film.
摘要翻译：半导体器件具有形成在半导体衬底上并具有第一栅极绝缘膜和第一栅极电极的第一导电类型晶体管和具有第二栅极绝缘膜和第二栅电极的第二导电类型晶体管。第一栅电极是具有金属膜的金属栅电极，第二栅电极是由硅化物膜制成的全硅化栅电极。

2. 发明授权

US09595567B2 Semiconductor memory device with resistance change film and method of manufacturing the same 有权
标题翻译：具有电阻变化膜的半导体存储器件及其制造方法
公开(公告)号：US09595567B2
公开(公告)日：2017-03-14
申请号：US13585141
申请日：2012-08-14
申请人： Kazuhiko Yamamoto
发明人： Kazuhiko Yamamoto
IPC分类号： H01L29/49 , H01L27/24 , H01L29/40 , H01L45/00
CPC分类号： H01L27/249 , H01L45/08 , H01L45/1226 , H01L45/146 , H01L45/1616
摘要： According to one embodiment, a semiconductor memory device includes a semiconductor substrate, a plurality of insulating layers, a plurality of first interconnection layers, a plurality of second interconnection layers, a plurality of memory cells, and a resistance change film. The insulating layers and first interconnection layers are arranged in parallel with the semiconductor substrate. The second interconnection layers are arranged so as to intersect the first interconnection layers. The second interconnection layers are arranged perpendicular to the semiconductor substrate. The memory cells are arranged at intersections of the first and second interconnection layers. Each of the memory cells includes the resistance change film arranged between the first and second interconnection layers. The side of the first interconnection layer in contact with the resistance change film is retreated more in a direction to separate from the second interconnection layer than the side of the insulating layer.
摘要翻译：根据一个实施例，半导体存储器件包括半导体衬底，多个绝缘层，多个第一互连层，多个第二互连层，多个存储单元和电阻变化膜。绝缘层和第一互连层与半导体衬底平行布置。第二互连层被布置成与第一互连层相交。第二互连层被布置成垂直于半导体衬底。存储单元布置在第一和第二互连层的交点处。每个存储单元包括布置在第一和第二互连层之间的电阻变化膜。与电阻变化膜接触的第一互连层的一侧比与绝缘层的侧面沿着与第二互连层分离的方向更多地退避。

3. 发明授权

US08648323B2 Nonvolatile memory device and method of fabricating the same 有权
标题翻译：非易失性存储器件及其制造方法
公开(公告)号：US08648323B2
公开(公告)日：2014-02-11
申请号：US12724732
申请日：2010-03-16
申请人： Kazuhiko Yamamoto , Takuya Konno , Takeshi Yamaguchi
发明人： Kazuhiko Yamamoto , Takuya Konno , Takeshi Yamaguchi
IPC分类号： H01L47/00
CPC分类号： B82Y10/00 , H01L27/2409 , H01L27/2463 , H01L45/04 , H01L45/065 , H01L45/1233 , H01L45/1246 , H01L45/1273 , H01L45/149 , H01L45/1608 , H01L51/0046 , H01L51/0048
摘要： A nonvolatile memory device includes: a substrate; a first electrode formed on the substrate; a resistance change layer formed on the first electrode, the resistance change layer containing conductive nano-material; a second electrode formed on the resistance change layer; and an insulating buffer layer disposed between the first electrode and the resistance change layer, the insulating buffer layer containing conductive material dispersed therein for assuring the electric conductivity between the first electrode and the resistance change layer.
摘要翻译：非易失性存储器件包括：衬底; 形成在所述基板上的第一电极; 形成在第一电极上的电阻变化层，电阻变化层包含导电纳米材料; 形成在电阻变化层上的第二电极; 以及设置在所述第一电极和所述电阻变化层之间的绝缘缓冲层，所述绝缘缓冲层包含分散在其中的导电材料，以确保所述第一电极和所述电阻变化层之间的导电性。

4. 发明授权

US08395138B2 Nonvolatile semiconductor memory having buffer layer containing nitrogen and containing carbon as main component 有权
标题翻译：具有含有氮并含有碳作为主要成分的缓冲层的非挥发性半导体存储器
公开(公告)号：US08395138B2
公开(公告)日：2013-03-12
申请号：US12545326
申请日：2009-08-21
申请人： Kazuhiko Yamamoto , Kazuyuki Yahiro , Tsukasa Nakai
发明人： Kazuhiko Yamamoto , Kazuyuki Yahiro , Tsukasa Nakai
IPC分类号： H01L47/00 , H01L29/00 , H01L29/02 , H01L29/04 , H01L29/06 , H01L31/0312 , G11C11/00
CPC分类号： H01L45/12 , H01L27/2409 , H01L27/2463 , H01L45/065 , H01L45/1233 , H01L45/149 , H01L45/1616 , H01L45/1625 , H01L45/1675
摘要： A nonvolatile semiconductor memory using carbon related films as variable resistance films includes bottom electrodes formed above a substrate, buffer layers formed on the bottom electrodes and each formed of a film containing nitrogen and containing carbon as a main component, variable resistance films formed on the buffer layers and each formed of a film containing carbon as a main component and the electrical resistivity thereof being changed according to application of voltage or supply of current, and top electrodes formed on the variable resistance films.
摘要翻译：使用碳相关膜作为可变电阻膜的非易失性半导体存储器包括形成在衬底上的底部电极，形成在底部电极上的缓冲层，并且每个由含有氮并含有碳作为主要成分的膜形成，形成在缓冲器上的可变电阻膜层，并且各自由含有碳作为主要成分的膜形成，并且其电阻率根据施加电压或电流供应而变化，以及形成在可变电阻膜上的顶部电极。

5. 发明授权

US08378331B2 Nonvolatile semiconductor memory device 失效
标题翻译：非易失性半导体存储器件
公开(公告)号：US08378331B2
公开(公告)日：2013-02-19
申请号：US12707136
申请日：2010-02-17
申请人： Yasuhiro Satoh , Tsukasa Nakai , Kazuhiko Yamamoto , Motoya Kishida , Hiroyuki Fukumizu , Yasuhiro Nojiri
发明人： Yasuhiro Satoh , Tsukasa Nakai , Kazuhiko Yamamoto , Motoya Kishida , Hiroyuki Fukumizu , Yasuhiro Nojiri
IPC分类号： H01L29/02
CPC分类号： H01L45/1233 , H01L27/2409 , H01L27/2481 , H01L45/04 , H01L45/149 , H01L45/1641
摘要： This nonvolatile semiconductor memory device comprises a memory cell array including memory cells arranged therein. Each of the memory cells is located at respective intersections between first wirings and second wirings and includes a variable resistance element. The variable resistance element comprises a thin film including carbon (C). The thin film includes a side surface along a direction of a current flowing in the memory cell. The side surface includes carbon nitride (CNx).
摘要翻译：该非易失性半导体存储器件包括存储单元阵列，该存储单元阵列包括布置在其中的存储单元。每个存储单元位于第一布线和第二布线之间的相应交点处，并且包括可变电阻元件。可变电阻元件包括包含碳（C）的薄膜。薄膜包括沿着在存储单元中流动的电流的方向的侧表面。侧表面包括碳氮化物（CNx）。

6. 发明授权

US08337011B2 Inkjet recording sheet 有权
标题翻译：喷墨记录纸
公开(公告)号：US08337011B2
公开(公告)日：2012-12-25
申请号：US12820278
申请日：2010-06-22
申请人： Kenichi Seguchi , Kazuhiko Yamamoto , Ichiro Miyamoto , Masayuki Matsubara , Masayoshi Iwasaki , Hideyuki Uemura
发明人： Kenichi Seguchi , Kazuhiko Yamamoto , Ichiro Miyamoto , Masayuki Matsubara , Masayoshi Iwasaki , Hideyuki Uemura
IPC分类号： B41J2/01
CPC分类号： B41M5/52 , B41M5/5245 , B41M5/5254 , B41M5/5263 , B41M5/5281 , B41M5/529
摘要： An inkjet recording sheet for forming an image using aqueous pigment ink that includes a substrate and an ink-receiving layer formed on the substrate. The ink-receiving layer is obtained by applying, on the substrate, a coating composition containing: a cationic acrylic silicone emulsion-based resin having a hydrolyzable silyl group as a crosslinking component; a cationic polyether-based urethane resin; and a carbodiimide group-containing resin, followed by curing the applied coating composition. In the coating composition, the content of the cationic acrylic silicone emulsion-based resin is 2 to 7% by mass, the content of the cationic polyether-based urethane resin is 88 to 94% by mass, and the content of the carbodiimide group-containing resin is 2 to 6% by mass in terms of solid matter.
摘要翻译：一种用于使用水性颜料油墨形成图像的喷墨记录纸，其包括基板和形成在基板上的油墨接收层。通过在基材上涂布含有水解性甲硅烷基作为交联成分的阳离子性丙烯酸类硅酮乳液类树脂的涂料组合物，得到油墨接受层; 阳离子聚醚基聚氨酯树脂; 和含碳二亚胺基团的树脂，然后固化所涂覆的涂料组合物。在涂料组合物中，阳离子丙烯酸类硅酮乳液系树脂的含量为2〜7质量％，阳离子性聚醚系聚氨酯树脂的含量为88〜94质量％，碳二亚胺基 - 含有树脂的固体成分为2〜6质量％。

7. 发明申请

US20120217464A1 NONVOLATILE STORAGE DEVICE 有权
标题翻译：非易失存储器件
公开(公告)号：US20120217464A1
公开(公告)日：2012-08-30
申请号：US13404678
申请日：2012-02-24
申请人： Shigeki Kobayashi , Kazuhiko Yamamoto , Kenji Aoyama , Shigeto Oshino , Kei Watanabe , Shinichi Nakao , Satoshi Ishikawa , Takeshi Yamaguchi
发明人： Shigeki Kobayashi , Kazuhiko Yamamoto , Kenji Aoyama , Shigeto Oshino , Kei Watanabe , Shinichi Nakao , Satoshi Ishikawa , Takeshi Yamaguchi
IPC分类号： H01L45/00
CPC分类号： H01L27/2481 , H01L27/2409 , H01L45/04 , H01L45/12 , H01L45/1233 , H01L45/149
摘要： A nonvolatile storage device is formed by laminating a plurality of memory cell arrays, the memory cell array including a plurality of word lines, a plurality of bit lines, and memory cells. The memory cell includes a current rectifying device and a variable resistance device, the variable resistance device includes a lower electrode, an upper electrode, and a resistance change layer including a conductive nano material formed between the lower electrode and the upper electrode, one of the variable resistance devices provided adjacent to each other in the laminating direction has titanium oxide (TiOx) between the resistance change layer and the lower electrode serving as a cathode, the other of the variable resistance devices provided adjacent to each other in the laminating direction has titanium oxide (TiOx) between the resistance change layer and the upper electrode serving as a cathode.
摘要翻译：通过层叠多个存储单元阵列形成非易失性存储装置，所述存储单元阵列包括多个字线，多个位线和存储单元。存储单元包括电流整流装置和可变电阻装置，可变电阻装置包括下电极，上电极和包括形成在下电极和上电极之间的导电纳米材料的电阻变化层，在层叠方向上彼此相邻设置的可变电阻装置在电阻变化层和作为阴极的下部电极之间具有钛氧化物（TiOx），另外在层叠方向上彼此相邻设置的可变电阻装置具有钛电阻变化层和作为阴极的上部电极之间的氧化物（TiOx）。

8. 发明申请

US20110318510A1 INK JET RECORDING MEDIUM 有权
标题翻译：喷墨记录介质
公开(公告)号：US20110318510A1
公开(公告)日：2011-12-29
申请号：US13168108
申请日：2011-06-24
申请人： Kenichi Seguchi , Kazuhiko Yamamoto
发明人： Kenichi Seguchi , Kazuhiko Yamamoto
IPC分类号： B41M5/40
CPC分类号： B41M5/52 , B41M5/506 , B41M5/508 , B41M5/5218 , B41M5/5236 , B41M5/5254 , B41M5/5281 , B41M5/529
摘要： Provided is an ink jet recording medium which is capable of reproducing a wide range of gloss including high luster like metallic luster and substantially no luster due to matting by varying only the amount of applied ink and in which the consumption of a white ink used to adjust the glossiness thereof is small.
摘要翻译：本发明提供一种喷墨记录介质，其能够再现宽范围的光泽，其包括如光泽度高的光泽，并且由于仅通过改变所施加的油墨的量而消光而基本上没有光泽，并且其中用于调节的白色油墨的消耗其光泽度小。

9. 发明申请

US20110306199A1 METHOD FOR MANUFACTURING NONVOLATILE MEMORY DEVICE 有权
标题翻译：制造非易失性存储器件的方法
公开(公告)号：US20110306199A1
公开(公告)日：2011-12-15
申请号：US13075658
申请日：2011-03-30
申请人： Yasuhiro NOJIRI , Hiroyuki Fukumizu , Shinichi Nakao , Kei Watanabe , Kazuhiko Yamamoto , Ichiro Mizushima , Yoshio Ozawa
发明人： Yasuhiro NOJIRI , Hiroyuki Fukumizu , Shinichi Nakao , Kei Watanabe , Kazuhiko Yamamoto , Ichiro Mizushima , Yoshio Ozawa
IPC分类号： H01L21/768 , B82Y99/00
CPC分类号： H01L51/0591 , B82Y10/00 , B82Y40/00 , G11C13/0002 , G11C13/025 , G11C2213/71 , H01L27/2409 , H01L27/2481 , H01L45/04 , H01L45/149 , H01L45/1608
摘要： According to one embodiment, a method is disclosed for manufacturing a nonvolatile memory device. The nonvolatile memory device includes a memory cell connected to a first interconnect and a second interconnect. The method can include forming a first electrode film on the first interconnect. The method can include forming a layer including a plurality of carbon nanotubes dispersed inside an insulator on the first electrode film. At least one carbon nanotube of the plurality of carbon nanotubes is exposed from a surface of the insulator. The method can include forming a second electrode film on the layer. In addition, the method can include forming a second interconnect on the second electrode film.
摘要翻译：根据一个实施例，公开了一种用于制造非易失性存储器件的方法。非易失性存储器件包括连接到第一互连和第二互连的存储单元。该方法可以包括在第一互连上形成第一电极膜。该方法可以包括在第一电极膜上形成分散在绝缘体内的多个碳纳米管的层。多个碳纳米管中的至少一个碳纳米管从绝缘体的表面露出。该方法可以包括在该层上形成第二电极膜。此外，该方法可以包括在第二电极膜上形成第二互连。

10. 发明申请

US20100237319A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE 失效
标题翻译：非易失性半导体存储器件
公开(公告)号：US20100237319A1
公开(公告)日：2010-09-23
申请号：US12707136
申请日：2010-02-17
申请人： Yasuhiro SATOH , Tsukasa Nakai , Kazuhiko Yamamoto , Motoya Kishida , Hiroyuki Fukumizu , Yasuhiro Nojiri
发明人： Yasuhiro SATOH , Tsukasa Nakai , Kazuhiko Yamamoto , Motoya Kishida , Hiroyuki Fukumizu , Yasuhiro Nojiri
IPC分类号： H01L45/00
CPC分类号： H01L45/1233 , H01L27/2409 , H01L27/2481 , H01L45/04 , H01L45/149 , H01L45/1641
摘要： This nonvolatile semiconductor memory device comprises a memory cell array including memory cells arranged therein. Each of the memory cells is located at respective intersections between first wirings and second wirings and includes a variable resistance element. The variable resistance element comprises a thin film including carbon (C). The thin film includes a side surface along a direction of a current flowing in the memory cell. The side surface includes carbon nitride (CNx).
摘要翻译：该非易失性半导体存储器件包括存储单元阵列，该存储单元阵列包括布置在其中的存储单元。每个存储单元位于第一布线和第二布线之间的相应交点处，并且包括可变电阻元件。可变电阻元件包括包含碳（C）的薄膜。薄膜包括沿着在存储单元中流动的电流的方向的侧表面。侧表面包括碳氮化物（CNx）。

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