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1. 发明授权

US07095114B2 Semiconductor device with via hole group generating high frequency electromagnetic bonding, manufacturing method thereof, and monolithic microwave integrated circuit 有权
标题翻译：具有通孔组的半导体器件产生高频电磁接合，其制造方法和单片微波集成电路
公开(公告)号：US07095114B2
公开(公告)日：2006-08-22
申请号：US10157077
申请日：2002-05-30
申请人： Naoki Takahashi , Nobuyuki Matsumoto , Kazuhiko Shirakawa , Yoshinori Motouchi
发明人： Naoki Takahashi , Nobuyuki Matsumoto , Kazuhiko Shirakawa , Yoshinori Motouchi
IPC分类号： H01L23/34
CPC分类号： H01L21/76898 , H01L23/481 , H01L27/0605 , H01L2924/0002 , H01L2924/10329 , H01L2924/00
摘要： An amplifier GaAs MMIC for microwave band applications includes a ground electrode 8 having a via hole group 12 composed of three via holes 11 filled with plated metals 10a that are formed adjacently. The interaction thereby generates high frequency electromagnetic bonding, which reduces the ground inductance. According to the MMIC, the ground inductance of the via hole may be reduced while decrease of a strength and increase of a size being restrained.
摘要翻译：用于微波带应用的放大器GaAs MMIC包括具有通孔组12的接地电极8，该通孔组12由填充有相邻形成的电镀金属10a的三个通孔11组成。因此，相互作用产生高频电磁接合，这降低了接地电感。根据MMIC，可以减小通孔的接地电感，同时抑制强度的减小和尺寸的增加。

2. 发明授权

US06882026B2 Semiconductor apparatus and process for producing the same, and process for making via hole 失效
标题翻译：半导体装置及其制造方法以及制造通孔的方法
公开(公告)号：US06882026B2
公开(公告)日：2005-04-19
申请号：US10156558
申请日：2002-05-29
申请人： Kazuhiko Shirakawa
发明人： Kazuhiko Shirakawa
IPC分类号： H01L21/8252 , H01L27/06 , H01L29/04 , H01L29/737 , H01L21/265
CPC分类号： H01L27/0605 , H01L21/8252 , H01L29/045 , H01L29/7371
摘要： In a semiconductor apparatus, a plurality of HBTs (heterojunction bipolar transistors) are formed on a front surface consisting of a (100) crystal plane of a GaAs substrate. Via holes passing thorough the GaAs substrate are formed in proximity of the HBTs. Each via hole has a rectangular-shaped hole edge at the front surface side of the GaAs substrate. The longitudinal direction of the hole edge on the surface side of the via hole is parallel to the [011] direction of crystal orientation of the GaAs substrate. A width of the via hole in a direction perpendicular to the [011] direction of crystal orientation is larger at the back surface of the substrate than at the front surface thereof.
摘要翻译：在半导体装置中，在由GaAs衬底的（100）晶面组成的前表面上形成多个HBT（异质结双极晶体管）。通过穿过GaAs衬底的通孔形成在HBT附近。每个通孔在GaAs衬底的前表面侧具有矩形的孔边。通孔的表面侧的孔边缘的长度方向平行于GaAs衬底的[011]晶体取向方向。在垂直于晶体取向的[011]方向的方向上的通孔的宽度在基板的后表面处比在其前表面处的宽度大。

3. 发明授权

US06633075B1 Heterojunction bipolar transistor and method for fabricating the same 失效
标题翻译：异质结双极晶体管及其制造方法
公开(公告)号：US06633075B1
公开(公告)日：2003-10-14
申请号：US09641819
申请日：2000-08-18
申请人： Kazuhiko Shirakawa
发明人： Kazuhiko Shirakawa
IPC分类号： H01L27082
CPC分类号： H01L29/66242 , H01L23/367 , H01L23/3677 , H01L23/481 , H01L29/41708 , H01L29/7371 , H01L2924/0002 , H01L2924/00
摘要： A heterojunction bipolar transistor includes an emitter layer, a base layer and a collector layer laminated on a top surface of a semiconductor substrate, and a heat sink layer made of a metal and provided on a rear surface of the substrate. A via hole is cut through the emitter layer, the base layer, the collector layer and the substrate. A surface electrode of the emitter layer and the heat sink layer are connected to each other by a metal wiring line running through within the via hole, which is capable of improving the heat radiation and reducing the emitter inductance.
摘要翻译：异质结双极晶体管包括层叠在半导体衬底的顶表面上的发射极层，基极层和集电极层以及设置在衬底的后表面上的由金属制成的散热层。通孔穿过发射极层，基极层，集电极层和衬底。发射极层和散热层的表面电极通过在通孔内延伸穿过的金属布线相互连接，能够改善散热和降低发射极电感。

4. 发明授权

US06844575B2 Heterojunction bipolar transistor and method for fabricating the same 失效
标题翻译：异质结双极晶体管及其制造方法
公开(公告)号：US06844575B2
公开(公告)日：2005-01-18
申请号：US10631806
申请日：2003-08-01
申请人： Kazuhiko Shirakawa
发明人： Kazuhiko Shirakawa
IPC分类号： H01L29/73 , H01L21/331 , H01L21/8222 , H01L23/367 , H01L23/48 , H01L27/082 , H01L29/205 , H01L29/417 , H01L29/737 , H01L31/0328
CPC分类号： H01L29/66242 , H01L23/367 , H01L23/3677 , H01L23/481 , H01L29/41708 , H01L29/7371 , H01L2924/0002 , H01L2924/00
摘要： A heterojunction bipolar transistor is fabricated by laminating and emitter layer, a base layer and a collector layer on a top surface of a semiconductor substrate, forming a via hole through the emitter layer, the base layer, the collector layer and the substrate at a specific depth, and providing a heat sink layer made of a metal on a rear surface of the substrate. A surface electrode of the emitter layer and the heat sink layer are connected to each other by a metal wiring line running through within the via hole, thereby improving the heat radiation and reducing the emitter inductance.
摘要翻译：异质结双极晶体管通过在半导体衬底的顶表面上层叠和发射层，基极层和集电极层，通过发射极层，基极层，集电极层和衬底形成通孔，并且在基板的后表面上提供由金属制成的散热层。发射极层和散热层的表面电极通过在通孔内延伸的金属布线彼此连接，从而改善散热并降低发射极电感。

5. 发明申请

US20050001701A1 Electrostatic actuator, microswitch, micro optical switch, electronic device, and method of manufacturing electrostatic actuator 有权
标题翻译：静电执行机构，微动开关，微型光开关，电子装置及静电执行器的制造方法
公开(公告)号：US20050001701A1
公开(公告)日：2005-01-06
申请号：US10884527
申请日：2004-07-02
申请人： Kazuhiko Shirakawa
发明人： Kazuhiko Shirakawa
IPC分类号： B81B5/00 , G02B26/08 , H01H59/00 , H01H35/02
CPC分类号： H01H59/0009 , G02B26/0841 , H01H2059/0054
摘要： The present switch including the present actuator has a supporting column on a substrate, and a cap plate provided on the supporting column. The supporting column pivotally supports the cap plate. At ends of the cap plate, a plurality of beams are provided, respectively. The plurality of beams are subjected to electrostatic force of absorbing electrodes. According to the present switch, tilting directions of the cap plate (beams) can be set freely. Therefore, by providing the beams in a plurality of directions desired by a user and positioning the absorbing electrodes on the substrate so that the absorbing electrodes respectively correspond to the beams, the cap plate can be tilted in a plurality of desired directions. With this arrangement, the present switch has high degree of freedom as to the positions and number of substrate contact points.
摘要翻译：包括本致动器的本开关在基板上具有支撑柱，以及设置在支撑柱上的盖板。支撑柱可枢转地支撑盖板。在盖板的端部，分别设置多个梁。多个光束受到吸收电极的静电力。根据本开关，能够自由地设定盖板（梁）的倾斜方向。因此，通过在使用者期望的多个方向上设置光束并将吸收电极定位在基板上，使得吸收电极分别对应于光束，盖板可以在多个期望的方向上倾斜。通过这种布置，本开关对于基板接触点的位置和数量具有高自由度。

6. 发明授权

US6025614A Amplifier semiconductor element, method for fabricating the same, and amplifier semiconductor device 失效
标题翻译：放大器半导体元件及其制造方法以及放大器半导体器件
公开(公告)号：US6025614A
公开(公告)日：2000-02-15
申请号：US50431
申请日：1998-03-31
申请人： Minoru Ogawa , Nobuyuki Matsumoto , Takao Hasegawa , Kazuhiko Shirakawa
发明人： Minoru Ogawa , Nobuyuki Matsumoto , Takao Hasegawa , Kazuhiko Shirakawa
IPC分类号： H01L27/095 , H01L21/338 , H01L29/417 , H01L29/812 , H03F1/56 , H03F3/193 , H03F3/60 , H01L31/0328 , H01L31/072
CPC分类号： H01L29/66871 , H01L29/41725 , H01L29/812 , H03F1/56 , H03F3/1935
摘要： The amplifier semiconductor element of this invention includes a field effect transistor of which a threshold voltage V.sub.th has a predetermined relationship with an operating voltage.
摘要翻译：本发明的放大器半导体元件包括阈值电压Vth与工作电压具有预定关系的场效应晶体管。

7. 发明授权

US07859370B2 Electrostatic actuator 有权
标题翻译：静电执行机构
公开(公告)号：US07859370B2
公开(公告)日：2010-12-28
申请号：US11095359
申请日：2005-03-30
申请人： Kazuhiko Shirakawa
发明人： Kazuhiko Shirakawa
IPC分类号： H01H51/22
CPC分类号： G02B6/3564 , G02B6/3518 , G02B6/3552 , G02B6/357 , G02B6/3584 , H01H59/0009 , H01H2059/0054
摘要： A switch with an actuator has two supporting columns on a substrate, and a rocking plate on the supporting columns. The rocking plate is pivoted by (pivotally mounted on) the two supporting columns. The rocking plate is made of conductive material, so that it can be subjected to electrostatic force of an adsorption electrode. In the switch, it is not necessary to provide a narrow beam to support the rocking plate, because the rocking plate is pivoted by the supporting columns. Therefore, the switch is a long-life microswitch.
摘要翻译：具有致动器的开关在基板上具有两个支撑柱，在支撑柱上具有摇摆板。摇摆板通过（枢转地安装在）两个支撑柱上枢转。摇摆板由导电材料制成，使其能够受到吸附电极的静电力。在开关中，由于摆动板由支柱枢转，所以不需要提供窄梁来支撑摇摆板。因此，开关是长寿命微动开关。

8. 发明授权

US07164334B2 Electrostatic actuator, microswitch, micro optical switch, electronic device, and method of manufacturing electrostatic actuator 有权
标题翻译：静电执行机构，微动开关，微型光开关，电子装置及静电执行器的制造方法
公开(公告)号：US07164334B2
公开(公告)日：2007-01-16
申请号：US10884527
申请日：2004-07-02
申请人： Kazuhiko Shirakawa
发明人： Kazuhiko Shirakawa
IPC分类号： H01H51/22
CPC分类号： H01H59/0009 , G02B26/0841 , H01H2059/0054
摘要： The present switch including the present actuator has a supporting column on a substrate, and a cap plate provided on the supporting column. The supporting column pivotally supports the cap plate. At ends of the cap plate, a plurality of beams are provided, respectively. The plurality of beams are subjected to electrostatic force of absorbing electrodes. According to the present switch, tilting directions of the cap plate (beams) can be set freely. Therefore, by providing the beams in a plurality of directions desired by a user and positioning the absorbing electrodes on the substrate so that the absorbing electrodes respectively correspond to the beams, the cap plate can be tilted in a plurality of desired directions. With this arrangement, the present switch has high degree of freedom as to the positions and number of substrate contact points.
摘要翻译：包括本致动器的本开关在基板上具有支撑柱，以及设置在支撑柱上的盖板。支撑柱可枢转地支撑盖板。在盖板的端部，分别设置多个梁。多个光束受到吸收电极的静电力。根据本开关，能够自由地设定盖板（梁）的倾斜方向。因此，通过在用户期望的多个方向上设置光束并将吸收电极定位在基板上，使得吸收电极分别对应于光束，盖板可以在多个期望方向上倾斜。通过这种布置，本开关对于基板接触点的位置和数量具有高自由度。

9. 发明申请

US20050219017A1 Electrostatic actuator 有权
标题翻译：静电执行机构
公开(公告)号：US20050219017A1
公开(公告)日：2005-10-06
申请号：US11095359
申请日：2005-03-30
申请人： Kazuhiko Shirakawa
发明人： Kazuhiko Shirakawa
IPC分类号： G02B26/08 , B81B5/00 , B81C1/00 , G02B6/35 , H01H35/00 , H01H51/22 , H01H59/00 , H02N1/00
CPC分类号： G02B6/3564 , G02B6/3518 , G02B6/3552 , G02B6/357 , G02B6/3584 , H01H59/0009 , H01H2059/0054
摘要： A switch with an actuator has two supporting columns on a substrate, and a rocking plate on the supporting columns. The rocking plate is pivoted by (pivotally mounted on) the two supporting columns. The rocking plate is made of conductive material, so that it can be subjected to electrostatic force of an adsorption electrode. In the switch, it is not necessary to provide a narrow beam to support the rocking plate, because the rocking plate is pivoted by the supporting columns. Therefore, the switch is a long-life microswitch.
摘要翻译：具有致动器的开关在基板上具有两个支撑柱，在支撑柱上具有摇摆板。摇摆板通过（枢转地安装在）两个支撑柱上枢转。摇摆板由导电材料制成，使其能够受到吸附电极的静电力。在开关中，由于摆动板由支柱枢转，所以不需要提供窄梁来支撑摇摆板。因此，开关是长寿命微动开关。

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