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1. 发明申请

US20100155808A1 SEMICONDUCTOR MEMORY, SEMICONDUCTOR MEMORY SYSTEM USING THE MEMORY, AND METHOD FOR MANUFACTURING QUANTUM DOT USED IN SEMICONDUCTOR MEMORY 有权
标题翻译：半导体存储器，使用存储器的半导体存储器系统以及用于制造半导体存储器中使用的量子点的方法
公开(公告)号：US20100155808A1
公开(公告)日：2010-06-24
申请号：US12600986
申请日：2008-03-26
申请人： Katsunori Makihara , Seiichi Miyazaki , Seiichiro Higashi
发明人： Katsunori Makihara , Seiichi Miyazaki , Seiichiro Higashi
IPC分类号： H01L29/788 , H01L21/4763
CPC分类号： H01L29/42332 , B82Y10/00 , H01L21/28273 , H01L29/7881
摘要： A semiconductor memory has a composite floating structure in which quantum dots composed of Si and coated with a Si oxide thin film are deposited on an insulating film formed on a semiconductor substrate, quantum dots coated with a high-dielectric insulating film are deposited on the quantum dots, and quantum dots composed of Si and coated with a high-dielectric insulating film are further deposited. Each of the quantum dots includes a core layer and a clad layer which covers the core layer. The electron occupied level in the core layer is lower than that in the clad layer.
摘要翻译：半导体存储器具有复合浮动结构，其中由Si构成的量子点并且涂覆有氧化硅薄膜，沉积在形成于半导体衬底上的绝缘膜上，涂覆有高介电常数绝缘膜的量子点沉积在量子点和由Si构成并涂覆有高介电常数绝缘膜的量子点进一步沉积。每个量子点包括芯层和覆盖芯层的覆层。芯层中的电子占有量低于包层中的电子占有量。

2. 发明授权

US08653518B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08653518B2
公开(公告)日：2014-02-18
申请号：US12599638
申请日：2007-12-06
申请人： Katsunori Makihara , Seiichi Miyazaki , Seiichiro Higashi , Hideki Murakami
发明人： Katsunori Makihara , Seiichi Miyazaki , Seiichiro Higashi , Hideki Murakami
IPC分类号： H01L29/792 , H01L29/02
CPC分类号： H01L21/28273 , B82Y10/00 , G11C16/0408 , G11C16/0441 , H01L29/42332 , H01L29/66825
摘要： A semiconductor device has a floating gate structure in which charge storage layers are stacked on a SiO2 layer formed on a substrate made of n-type Si. The charge storage layer has quantum dots made of undoped Si and an oxide layer that covers the quantum dots. The charge storage layer has quantum dots made of n+-Si and an oxide layer that covers the quantum dots. Electrons originally existing in the quantum dots migrate between the quantum dots and the quantum dots via tunnel junction and are distributed in the quantum dots and/or the quantum dots according to the voltage applied to a gate electrode via pads. The distribution is detected in the form of a current (ISD).
摘要翻译：半导体器件具有浮栅结构，其中电荷存储层层叠在形成在由n型Si制成的衬底上的SiO 2层上。电荷存储层具有由未掺杂的Si构成的量子点和覆盖量子点的氧化物层。电荷存储层具有由n + -Si构成的量子点和覆盖量子点的氧化物层。最初存在于量子点中的电子经由隧道结在量子点和量子点之间迁移，并且根据通过焊盘施加到栅电极的电压而分布在量子点和/或量子点中。以电流（ISD）的形式检测分布。

3. 发明授权

US07898020B2 Semiconductor memory, semiconductor memory system using the same, and method for producing quantum dots applied to semiconductor memory 有权
标题翻译：半导体存储器，使用其的半导体存储器系统以及应用于半导体存储器的量子点的制造方法
公开(公告)号：US07898020B2
公开(公告)日：2011-03-01
申请号：US12523682
申请日：2007-12-06
申请人： Katsunori Makihara , Seiichi Miyazaki , Seiichiro Higashi
发明人： Katsunori Makihara , Seiichi Miyazaki , Seiichiro Higashi
IPC分类号： H01L29/788 , H01L21/3205
CPC分类号： H01L21/28273 , B82Y10/00 , H01J37/32357 , H01L29/42332 , H01L29/7881
摘要： A semiconductor memory includes a composite floating structure where an insulation film is formed on a semiconductor substrate, Si-based quantum dots covered with an extremely thin Si oxide film is formed on the insulation film, silicide quantum dots covered with a high dielectric insulation film are formed on the extremely thin Si oxide film, and Si-based quantum dots covered with a high dielectric insulation film are formed on the high dielectric insulation film. Multivalued memory operations can be conducted at a high speed and with stability by applying a certain positive voltage to a gate electrode to accumulate electrons in the silicide quantum dots and by applying a certain negative voltage and weak light to the gate electrode to emit the electrons from the silicide quantum dots.
摘要翻译：半导体存储器包括在半导体衬底上形成绝缘膜的复合浮动结构，在绝缘膜上形成覆盖有极薄Si氧化膜的Si基量子点，用高介电绝缘膜覆盖的硅化物量子点为形成在极薄的Si氧化膜上，并且在高介电绝缘膜上形成覆盖有高介电绝缘膜的Si基量子点。可以通过向栅电极施加一定的正电压以在硅化物量子点中积聚电子并且通过向栅电极施加一定的负电压和弱光以从栅极电极发射电子而以高速和稳定的方式进行多值存储器操作硅化物量子点。

4. 发明申请

US20100308328A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20100308328A1
公开(公告)日：2010-12-09
申请号：US12599638
申请日：2007-12-06
申请人： Katsunori Makihara , Seiichi Miyazaki , Seiichiro Higashi , Hideki Murakami
发明人： Katsunori Makihara , Seiichi Miyazaki , Seiichiro Higashi , Hideki Murakami
IPC分类号： H01L29/792 , H01L29/02
CPC分类号： H01L21/28273 , B82Y10/00 , G11C16/0408 , G11C16/0441 , H01L29/42332 , H01L29/66825
摘要： A semiconductor device has a floating gate structure in which charge storage layers are stacked on a SiO2 layer formed on a substrate made of n-type Si. The charge storage layer has quantum dots made of undoped Si and an oxide layer that covers the quantum dots. The charge storage layer has quantum dots made of n+-Si and an oxide layer that covers the quantum dots. Electrons originally existing in the quantum dots migrate between the quantum dots and the quantum dots via tunnel junction and are distributed in the quantum dots and/or the quantum dots according to the voltage applied to a gate electrode via pads. The distribution is detected in the form of a current (ISD).
摘要翻译：半导体器件具有浮栅结构，其中电荷存储层层叠在形成在由n型Si制成的衬底上的SiO 2层上。电荷存储层具有由未掺杂的Si构成的量子点和覆盖量子点的氧化物层。电荷存储层具有由n + -Si构成的量子点和覆盖量子点的氧化物层。最初存在于量子点中的电子经由隧道结在量子点和量子点之间迁移，并且根据通过焊盘施加到栅电极的电压而分布在量子点和/或量子点中。以电流（ISD）的形式检测分布。

5. 发明授权

US07768032B2 Light-emitting device with enhanced luminous efficiency and method of producing the same 有权
标题翻译：具有增强的发光效率的发光装置及其制造方法
公开(公告)号：US07768032B2
公开(公告)日：2010-08-03
申请号：US12212406
申请日：2008-09-17
申请人： Katsunori Makihara , Seiichi Miyazaki , Seiichiro Higashi
发明人： Katsunori Makihara , Seiichi Miyazaki , Seiichiro Higashi
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/08
摘要： A light-emitting device comprises first and second dot members. The first dot member is formed so that it makes contact with the second dot member. The first dot member comprises a plurality of first quantum dot layers. Each of the plurality of first quantum dot layers comprises a plurality of first quantum dots and a silicon dioxide film. The first quantum dot comprises an n-type silicon dot. The second dot member comprises a plurality of second quantum dot layers. Each of the plurality of second quantum dot layers comprises a plurality of second quantum dots and a silicon dioxide film. The second quantum dot comprises a p-type silicon dot.
摘要翻译：发光装置包括第一和第二点构件。第一点状部件形成为与第二点状部件接触。第一点构件包括多个第一量子点层。多个第一量子点层中的每一个包括多个第一量子点和二氧化硅膜。第一量子点包括n型硅点。第二点构件包括多个第二量子点层。多个第二量子点层中的每一个包括多个第二量子点和二氧化硅膜。第二量子点包括p型硅点。

6. 发明申请

US20100176824A1 MEASURING APPARATUS AND MEASURING METHOD 有权
标题翻译：测量装置和测量方法
公开(公告)号：US20100176824A1
公开(公告)日：2010-07-15
申请号：US12664840
申请日：2008-07-31
申请人： Katsunori Makihara , Seiichi Miyazaki , Seiichiro Higashi
发明人： Katsunori Makihara , Seiichi Miyazaki , Seiichiro Higashi
IPC分类号： G01R27/26
CPC分类号： G01R27/2617 , H01L22/14 , H01L2924/0002 , H01L2924/00
摘要： A measuring unit applies a dc voltage causing an inversion layer to be formed on an interface between a semiconductor substrate and an insulating film to the semiconductor substrate while changing a change speed of a level of the dc voltage, and measures a current flowing through the insulating film. An arithmetic unit obtains a straight line showing a relationship between the current flowing through the insulating film and the change speed of the dc voltage on the basis of a relationship between the current measured by the measuring unit and the dc voltage, and calculates a slope of the obtained straight line as surface capacitance of the insulating film. The arithmetic unit calculates permittivity of the insulating film on the basis of the calculated surface capacitance, an area of contact between a probe and the insulating film and a thickness of the insulating film.
摘要翻译：测量单元在改变直流电压电平的变化速度的同时，向半导体衬底施加导致在半导体衬底和绝缘膜之间的界面上形成的反型层的直流电压，并测量流过绝缘体的电流电影。算术单元根据由测量单元测得的电流与直流电压之间的关系，获得表示流过绝缘膜的电流与直流电压的变化速度之间的关系的直线，并且计算斜率所获得的直线作为绝缘膜的表面电容。算术单元根据计算出的表面电容，探针和绝缘膜之间的接触面积和绝缘膜的厚度来计算绝缘膜的介电常数。

7. 发明授权

US07829935B2 Semiconductor memory, semiconductor memory system using the memory, and method for manufacturing quantum dot used in semiconductor memory 有权
标题翻译：半导体存储器，使用存储器的半导体存储器系统以及用于制造半导体存储器中使用的量子点的方法
公开(公告)号：US07829935B2
公开(公告)日：2010-11-09
申请号：US12600986
申请日：2008-03-26
申请人： Katsunori Makihara , Seiichi Miyazaki , Seiichiro Higashi
发明人： Katsunori Makihara , Seiichi Miyazaki , Seiichiro Higashi
IPC分类号： H01L21/336 , H01L29/788
CPC分类号： H01L29/42332 , B82Y10/00 , H01L21/28273 , H01L29/7881
摘要： A semiconductor memory has a composite floating structure in which quantum dots composed of Si and coated with a Si oxide thin film are deposited on an insulating film formed on a semiconductor substrate, quantum dots coated with a high-dielectric insulating film are deposited on the quantum dots, and quantum dots composed of Si and coated with a high-dielectric insulating film are further deposited. Each of the quantum dots includes a core layer and a clad layer which covers the core layer. The electron occupied level in the core layer is lower than that in the clad layer.
摘要翻译：半导体存储器具有复合浮动结构，其中由Si构成的量子点并且涂覆有氧化硅薄膜，沉积在形成于半导体衬底上的绝缘膜上，涂覆有高介电常数绝缘膜的量子点沉积在量子点和由Si构成并涂覆有高介电常数绝缘膜的量子点进一步沉积。每个量子点包括芯层和覆盖芯层的覆层。芯层中的电子占有量低于包层中的电子占有量。

8. 发明授权

US07812621B2 Measuring apparatus and method for measuring a surface capacitance of an insulating film 有权
标题翻译：用于测量绝缘膜的表面电容的测量装置和方法
公开(公告)号：US07812621B2
公开(公告)日：2010-10-12
申请号：US12664840
申请日：2008-07-31
申请人： Katsunori Makihara , Seiichi Miyazaki , Seiichiro Higashi
发明人： Katsunori Makihara , Seiichi Miyazaki , Seiichiro Higashi
IPC分类号： G01R27/26 , G01R31/26
CPC分类号： G01R27/2617 , H01L22/14 , H01L2924/0002 , H01L2924/00
摘要： A measuring unit applies a dc voltage causing an inversion layer to be formed on an interface between a semiconductor substrate and an insulating film to the semiconductor substrate while changing a change speed of a level of the dc voltage, and measures a current flowing through the insulating film. An arithmetic unit obtains a straight line showing a relationship between the current flowing through the insulating film and the change speed of the dc voltage on the basis of a relationship between the current measured by the measuring unit and the dc voltage, and calculates a slope of the obtained straight line as surface capacitance of the insulating film. The arithmetic unit calculates permittivity of the insulating film on the basis of the calculated surface capacitance, an area of contact between a probe and the insulating film and a thickness of the insulating film.
摘要翻译：测量单元在改变直流电压电平的变化速度的同时，向半导体衬底施加导致形成在半导体衬底和绝缘膜之间的界面上的反型层的直流电压，并测量流过绝缘体的电流电影。算术单元根据由测量单元测得的电流和直流电压之间的关系，获得表示流过绝缘膜的电流与直流电压的变化速度之间的关系的直线，并且计算斜率所获得的直线作为绝缘膜的表面电容。算术单元根据计算出的表面电容，探针和绝缘膜之间的接触面积和绝缘膜的厚度来计算绝缘膜的介电常数。

9. 发明申请

US20100006921A1 SEMICONDUCTOR MEMORY, SEMICONDUCTOR MEMORY SYSTEM USING THE SAME, AND METHOD FOR PRODUCING QUANTUM DOTS APPLIED TO SEMICONDUCTOR MEMORY 有权
标题翻译：半导体存储器，使用该半导体存储器的半导体存储器系统以及用于生成适用于半导体存储器的量子点的方法
公开(公告)号：US20100006921A1
公开(公告)日：2010-01-14
申请号：US12523682
申请日：2007-12-06
申请人： Katsunori Makihara , Seiichi Miyazaki , Seiichiro Higashi
发明人： Katsunori Makihara , Seiichi Miyazaki , Seiichiro Higashi
IPC分类号： H01L29/788 , H01L21/3205
CPC分类号： H01L21/28273 , B82Y10/00 , H01J37/32357 , H01L29/42332 , H01L29/7881
摘要： A semiconductor memory includes a composite floating structure where an insulation film is formed on a semiconductor substrate, Si-based quantum dots covered with an extremely thin Si oxide film is formed on the insulation film, silicide quantum dots covered with a high dielectric insulation film are formed on the extremely thin Si oxide film, and Si-based quantum dots covered with a high dielectric insulation film are formed on the high dielectric insulation film. Multivalued memory operations can be conducted at a high speed and with stability by applying a certain positive voltage to a gate electrode to accumulate electrons in the silicide quantum dots and by applying a certain negative voltage and weak light to the gate electrode to emit the electrons from the silicide quantum dots.
摘要翻译：半导体存储器包括在半导体衬底上形成绝缘膜的复合浮动结构，在绝缘膜上形成覆盖有极薄Si氧化膜的Si基量子点，用高介电绝缘膜覆盖的硅化物量子点为形成在极薄的Si氧化膜上，并且在高介电绝缘膜上形成覆盖有高介电绝缘膜的Si基量子点。可以通过向栅电极施加一定的正电压以在硅化物量子点中积聚电子并且通过向栅电极施加一定的负电压和弱光以从栅极电极发射电子而以高速和稳定的方式进行多值存储器操作硅化物量子点。

10. 发明申请

US20090236584A1 LIGHT-EMITTING DEVICE WITH ENHANCED LUMINOUS EFFICIENCY AND METHOD OF PRODUCING THE SAME 有权
标题翻译：具有增强效率的发光装置及其生产方法
公开(公告)号：US20090236584A1
公开(公告)日：2009-09-24
申请号：US12212406
申请日：2008-09-17
申请人： Katsunori Makihara , Seiichi Miyazaki , Seiichiro Higashi
发明人： Katsunori Makihara , Seiichi Miyazaki , Seiichiro Higashi
IPC分类号： H01L33/00
CPC分类号： H01L33/08
摘要： A light-emitting device comprises first and second dot members. The first dot member is formed so that it makes contact with the second dot member. The first dot member comprises a plurality of first quantum dot layers. Each of the plurality of first quantum dot layers comprises a plurality of first quantum dots and a silicon dioxide film. The first quantum dot comprises an n-type silicon dot. The second dot member comprises a plurality of second quantum dot layers. Each of the plurality of second quantum dot layers comprises a plurality of second quantum dots and a silicon dioxide film. The second quantum dot comprises a p-type silicon dot.
摘要翻译：发光装置包括第一和第二点构件。第一点状部件形成为与第二点状部件接触。第一点构件包括多个第一量子点层。多个第一量子点层中的每一个包括多个第一量子点和二氧化硅膜。第一量子点包括n型硅点。第二点构件包括多个第二量子点层。多个第二量子点层中的每一个包括多个第二量子点和二氧化硅膜。第二量子点包括p型硅点。

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