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1. 发明授权

US06984918B1 Saw device 失效
标题翻译：锯装置
公开(公告)号：US06984918B1
公开(公告)日：2006-01-10
申请号：US10089804
申请日：2000-10-04
申请人： Akihiro Hachigo , Katsuhiro Itakura , Satoshi Fujii , Hideaki Nakahata , Shinichi Shikata
发明人： Akihiro Hachigo , Katsuhiro Itakura , Satoshi Fujii , Hideaki Nakahata , Shinichi Shikata
IPC分类号： H01L41/04 , H03H9/145
CPC分类号： H03H9/02582 , H03H9/02574
摘要： The present invention provides a surface acoustic wave device comprising a diamond, having operating frequencies in the range of several hundreds of MHz to several tens of GHz, and being capable of operating at high frequencies.The surface acoustic wave device of the present invention comprises a diamond layer or a substrate layer and a diamond layer, a ZnO piezoelectric layer, interdigital transducers and a short-circuit electrode layer, being characterized in that (2π·H/λM) is in the range of 3.0 to 10.0 where the thickness of the ZnO layer is H and the wavelength of the surface acoustic wave is λM.
摘要翻译：本发明提供一种表面声波装置，其包括金刚石，其工作频率在几百MHz至几十GHz的范围内，并且能够在高频下操作。本发明的声表面波器件包括金刚石层或基底层和金刚石层，ZnO压电层，叉指式换能器和短路电极层，其特征在于（2pi.H /λ< M 3）在3.0至10.0的范围内，其中ZnO层的厚度为H，声表面波的波长为λM。

2. 发明授权

US06469416B1 Surface acoustic wave device 有权
标题翻译：表面声波装置
公开(公告)号：US06469416B1
公开(公告)日：2002-10-22
申请号：US09959954
申请日：2001-11-13
申请人： Katsuhiro Itakura , Akihiro Hachigo , Hideaki Nakahata , Satoshi Fujii , Shinichi Shikata
发明人： Katsuhiro Itakura , Akihiro Hachigo , Hideaki Nakahata , Satoshi Fujii , Shinichi Shikata
IPC分类号： H03H925
CPC分类号： H03H9/02984 , H03H9/02574 , H03H9/02582
摘要： A surface acoustic wave (SAW) device is provided that is suitable for mass production and that has excellent operational performance at the superhigh-frequency range. The SAW device comprises (a) a diamond layer 3; (b) a ZnO layer 4, with a thickness of tz, formed on the diamond layer 3; (c) interdigital transducers (IDTs) 5, which excite and receive a SAW, formed on the ZnO layer 4; and (d) an SiO2 layer 6, with a thickness of ts, formed on the ZnO layer 4 so that the SiO2 layer can cover the IDTs 5. The structure of the SAW device is determined by specific numeric ranges of the parameters kh1 and kh2, which are given in equations kh1=5·2&pgr;·(tz/&lgr;) and kh2=5·2&pgr;(ts/&lgr;), where &lgr; signifies the wavelength of the fundamental wave of the second mode of the SAW. The SAW device uses the fifth harmonic of the second mode of the SAW.
摘要翻译：提供了适用于批量生产并且在超高频范围内具有优异的操作性能的表面声波（SAW）装置。 SAW器件包括（a）金刚石层3; （b）在金刚石层3上形成厚度为tz的ZnO层4; （c）在ZnO层4上形成的用于激发和接收SAW的叉指换能器（IDT）5; 和（d）在ZnO层4上形成厚度为ts的SiO 2层6，使得SiO 2层可以覆盖IDT 5. SAW器件的结构由参数kh1和kh2的特定数值范围确定，其方程式为kh1 = 5.2pi（tz / lambd）和kh2 = 5.2pi（ts / lambd），其中lambd表示SAW的第二模式的基波的波长。 SAW器件使用SAW的第二模式的第五谐波。

3. 发明授权

US06642813B1 Surface acoustic wave device utilizing a ZnO layer and a diamond layer 有权
标题翻译：使用ZnO层和金刚石层的声表面波器件
公开(公告)号：US06642813B1
公开(公告)日：2003-11-04
申请号：US10089816
申请日：2002-04-04
申请人： Katsuhiro Itakura , Akihiro Hachigo , Satoshi Fujii , Hideaki Nakahata , Shinichi Shikata
发明人： Katsuhiro Itakura , Akihiro Hachigo , Satoshi Fujii , Hideaki Nakahata , Shinichi Shikata
IPC分类号： H03H964
CPC分类号： H03H9/02582
摘要： A surface acoustic wave (SAW) device that is made with diamond, that has high efficiency, and that can be operated at high frequencies, particularly from 9.5 to 10.5 GHz. The SAW device comprises a diamond layer formed singly or formed on a substrate, a ZnO piezoelectric layer, interdigital transducers (IDTs), and a short-circuiting electrode as required. The SAW device has a structure in which the thickness of the ZnO layer, the wavelength of a harmonic of the SAW, and the line width of the IDTs fall in a specified range. With this structure, a large electromechanical coupling coefficient is obtained in a high-frequency range of 10 GHz band by utilizing the third or fifth harmonic of the SAW.
摘要翻译：具有金刚石的表面声波（SAW）器件，其具有高效率，并且可以在高频，特别是9.5至10.5GHz的频率下操作。 SAW器件包括单独形成或形成在衬底上的金刚石层，ZnO压电层，叉指式换能器（IDT）和根据需要的短路电极。 SAW器件具有其中ZnO层的厚度，SAW的谐波的波长和IDT的线宽落在特定范围内的结构。利用这种结构，通过利用SAW的第三或第五谐波，在10GHz频带的高频范围内获得大的机电耦合系数。

4. 发明授权

US06713941B2 Surface acoustic wave element 有权
标题翻译：表面声波元件
公开(公告)号：US06713941B2
公开(公告)日：2004-03-30
申请号：US10204454
申请日：2002-08-21
申请人： Katsuhiro Itakura , Akihiro Hachigo , Hideaki Nakahata , Satoshi Fujii , Shinichi Shikata
发明人： Katsuhiro Itakura , Akihiro Hachigo , Hideaki Nakahata , Satoshi Fujii , Shinichi Shikata
IPC分类号： H03H925
CPC分类号： H03H9/02582
摘要： A surface acoustic wave (SAW) device that is suitable for mass production and that has excellent operational performance at the superhigh-frequency range. The SAW device comprises (a) a diamond layer 3; (b) a ZnO layer 4, with a thickness of tz, formed on the diamond layer 3; (c) interdigital transducers (IDTs) 5, which excite and receive a SAW, formed on the ZnO layer 4; and (d) an SiO2 layer 6, with a thickness of ts, formed on the ZnO layer 4 so that the SiO2 layer can cover the IDTs 5. The structure of the SAW device is determined by specific numeric ranges of the parameters kh1 and kh2, which are given in equations kh1=3·2&pgr;·(tz/&lgr;) and kh2=3·2&pgr;·(ts/&lgr;), where &lgr; signifies the wavelength of the fundamental wave of the second Sezawa mode of the SAW. The SAW device uses the third harmonic of the second Sezawa mode of the SAW excited.
摘要翻译：一种适用于大规模生产且在超高频范围内具有出色的运行性能的表面声波（SAW）器件。 SAW器件包括（a）金刚石层3; （b）在金刚石层3上形成厚度为tz的ZnO层4; （c）在ZnO层4上形成的用于激发和接收SAW的叉指换能器（IDT）5; 和（d）在ZnO层4上形成厚度为ts的SiO 2层6，使得SiO 2层可以覆盖IDT 5. SAW器件的结构由参数kh1和kh2的特定数值范围确定，其方程式为kh1 = 3.2pi（tz /λ）和kh2 = 3.2pi（ts / lambda），其中λ表示SAW的第二Sezawa模式的基波的波长。 SAW器件使用SAW激励的第二Sezawa模式的三次谐波。

5. 发明授权

US5463901A Stacked piezoelectric surface acoustic wave device with a boron nitride layer in the stack 失效
标题翻译：堆叠中的叠氮化硼层叠压电声表面波器件
公开(公告)号：US5463901A
公开(公告)日：1995-11-07
申请号：US283251
申请日：1994-07-29
申请人： Akihiro Hachigo , Hideaki Nakahata , Shinichi Shikata , Naoji Fujimori
发明人： Akihiro Hachigo , Hideaki Nakahata , Shinichi Shikata , Naoji Fujimori
IPC分类号： H03H9/145 , H03H9/02 , H03H9/25 , G01L9/00 , H04R31/00
CPC分类号： H03H9/02574 , Y10T29/49005
摘要： A layer of boron nitride which is relatively easily workable is positioned in a stacked structure in close contact with a piezoelectric member, to provide a surface acoustic wave device which can be driven in a higher frequency range. Such a surface acoustic device (10) has a substrate (1), a boron nitride film (2) formed on the substrate (1), and a pair of interdigital electrodes (3a, 3b) formed on the boron nitride film (2). The interdigital electrodes (3a, 3b) are covered with a piezoelectric film (4), which is in close contact with the boron nitride film (2).
摘要翻译：相对容易加工的氮化硼层位于与压电元件紧密接触的堆叠结构中，以提供能够在较高频率范围内驱动的声表面波器件。这种表面声学装置（10）具有基板（1），形成在基板（1）上的氮化硼膜（2）和形成在氮化硼膜（2）上的一对叉指电极（3a，3b）。叉指电极（3a，3b）被与氮化硼膜（2）紧密接触的压电膜（4）覆盖。

6. 发明授权

US5390401A Method for producing a surface acoustic wave device 失效
标题翻译：声表面波装置的制造方法
公开(公告)号：US5390401A
公开(公告)日：1995-02-21
申请号：US103729
申请日：1993-08-06
申请人： Shinichi Shikata , Hideaki Nakahata , Akihiro Hachigo , Naoji Fujimori
发明人： Shinichi Shikata , Hideaki Nakahata , Akihiro Hachigo , Naoji Fujimori
IPC分类号： H03H9/145 , H03H3/08 , H03H9/02 , H03H9/05 , H03H9/10 , H03H9/25 , H01L41/22
CPC分类号： H03H9/02574 , H03H3/08 , H03H9/1092 , Y10T29/42
摘要： A surface acoustic wave device is so manufactured that it's reliability is increased and so that it is surface-mountable with no requirement for packaging. The surface acoustic wave device (20) has a pair of opposite interdigital electrodes (2a, 2b) and a piezoelectric member (4) in close contact with the interdigital electrodes (2a, 2b). A portion located between the pair of interdigital electrodes (2a, 2b) propagates surface acoustic waves. This device (20) is characterized by an air bridge (13) covering the portion of the piezoelectric member (4) for propagating surface acoustic waves and the pair of interdigital electrodes (2a, 2b). The air bridge (13), may be provided with an insulating film (14) which is not in contact with the piezoelectric member (4).
摘要翻译：表面声波装置的制造使其可靠性增加，并且其表面可安装，而不需要包装。表面声波装置（20）具有与叉指电极（2a，2b）紧密接触的一对相对的叉指电极（2a，2b）和压电元件（4）。位于一对叉指电极（2a，2b）之间的部分传播表面声波。该装置（20）的特征在于，覆盖压电部件（4）的部分以传播表面声波的空气桥（13）和一对叉指电极（2a，2b）。空气桥（13）可以设置有不与压电构件（4）接触的绝缘膜（14）。

7. 发明授权

US06710513B2 Surface acoustic wave device and substrate thereof 有权
标题翻译：声表面波器件及其衬底
公开(公告)号：US06710513B2
公开(公告)日：2004-03-23
申请号：US10203423
申请日：2002-08-08
申请人： Hideaki Nakahata , Akihiro Hachigo , Natsuo Tatsumi , Takahiro Imai , Shinichi Shikata
发明人： Hideaki Nakahata , Akihiro Hachigo , Natsuo Tatsumi , Takahiro Imai , Shinichi Shikata
IPC分类号： H03H925
CPC分类号： H03H9/02582 , H03H9/02574
摘要： Provided are a substrate for a surface-acoustic-wave device and a surface-acoustic-wave device, in which an intermediate layer for controlling crystal characteristics of a piezoelectric layer does not easily separate from a diamond layer. A surface-acoustic-wave device substrate 20 and a surface-acoustic-wave device 10, according to the present invention, comprises a diamond layer 22, an intermediate layer 24 disposed on the diamond layer 22, and a piezoelectric layer 26 disposed on the intermediate layer 24, the piezoelectric layer 26 being made of LiNbO3 or LiTaO3, the intermediate layer 24 being made of AlN.
摘要翻译：提供一种用于控制压电层的晶体特性的中间层不容易与金刚石层分离的表面声波器件和表面声波器件的基板。表面声波器件根据本发明的衬底20和表面声波器件10包括金刚石层22，设置在金刚石层22上的中间层24和设置在中间层24上的压电层26，压电层 26由LiNbO 3或LiTaO 3制成，中间层24由AlN制成。

8. 发明授权

US5426340A Surface acoustic wave device and method of manufacturing the same 失效
标题翻译：表面声波装置及其制造方法
公开(公告)号：US5426340A
公开(公告)日：1995-06-20
申请号：US188536
申请日：1994-01-27
申请人： Kenjiro Higaki , Hideaki Nakahata , Akihiro Hachigo , Shinichi Shikata
发明人： Kenjiro Higaki , Hideaki Nakahata , Akihiro Hachigo , Shinichi Shikata
IPC分类号： H03H9/145 , H03H9/02 , H03H9/64 , H01L41/08
CPC分类号： H03H9/02582
摘要： A surface acoustic wave device includes a hard layer comprising diamond or a diamond-like carbon film, and a piezoelectric layer formed on the hard layer. It further includes a paired interdigital transducer and grounding electrode, which perform an electro-mechanical conversion, with the piezoelectric layer arranged therebetween. Then, the feature of the present invention is to form the grounding electrode of a conductive oxide. It is preferred that the conductive oxide is formed by doping an impurity into a piezoelectric material of ZnO. Therefore, the adhesion between the piezoelectric layer and the hard layer, and the grounding electrodes is increased, so that the device yield is enhanced, and a high electromechanical coupling coefficient can be achieved in a high frequency range.
摘要翻译：表面声波装置包括由金刚石或类金刚石碳膜构成的硬质层和形成在硬质层上的压电层。它还包括一个成对的叉指式换能器和接地电极，它们进行机电转换，压电层位于它们之间。然后，本发明的特征在于形成导电氧化物的接地电极。优选的是，通过将杂质掺杂到ZnO的压电材料中形成导电氧化物。因此，压电层与硬质层和接地电极之间的粘附性增加，从而提高了器件成品率，并且可以在高频范围内实现高的机电耦合系数。

9. 发明授权

US5401544A Method for manufacturing a surface acoustic wave device 失效
标题翻译：声表面波装置的制造方法
公开(公告)号：US5401544A
公开(公告)日：1995-03-28
申请号：US109394
申请日：1993-08-19
申请人： Hideaki Nakahata , Shinichi Shikata , Akihiro Hachigo , Naoji Fujimori
发明人： Hideaki Nakahata , Shinichi Shikata , Akihiro Hachigo , Naoji Fujimori
IPC分类号： H03H3/08 , H03H9/145 , H01L41/08 , B05D3/06 , C23C16/20
CPC分类号： H03H3/08 , H03H9/14538
摘要： A surface acoustic wave device which can operate at a higher frequency range is produced by irradiation with a focused ion beam to produce a narrower electrode width and narrower spacing width between neighboring electrodes in contact with a piezoelectric body, without degrading the reliability of the device. The surface acoustic wave device includes a piezoelectric body 3 and interdigital electrodes 2a and 2b in close contact with the piezoelectric body 3 and formed by using the focused ion beam. In order to increase the frequency of the device, the piezoelectric body 3 may be formed on a substrate 1, for example of diamond.
摘要翻译：可以通过用聚焦离子束照射来产生能够在较高频率范围内工作的表面声波装置，以产生与压电体接触的相邻电极之间的较窄的电极宽度和较窄的间隔宽度，而不会降低装置的可靠性。表面声波装置包括与压电体3紧密接触并通过使用聚焦离子束形成的压电体3和叉指电极2a和2b。为了增加器件的频率，压电体3可以形成在例如金刚石的衬底1上。

10. 发明授权

US5320865A Method of manufacturing a surface acoustic wave device 失效
标题翻译：声表面波装置的制造方法
公开(公告)号：US5320865A
公开(公告)日：1994-06-14
申请号：US947283
申请日：1992-09-16
申请人： Hideaki Nakahata , Shinichi Shikata , Akihiro Hachigo , Naoji Fujimori
发明人： Hideaki Nakahata , Shinichi Shikata , Akihiro Hachigo , Naoji Fujimori
IPC分类号： H03H3/08 , H03H9/02 , H03H9/145 , H01L41/22
CPC分类号： H03H3/08 , H03H9/02582 , Y10T29/42
摘要： A method of manufacturing a surface acoustic wave device which has a smaller insertion loss and which operates at higher frequency than a conventional surface acoustic wave device is provided. The surface acoustic wave device includes a substrate, a diamond layer formed on the substrate, a piezoelectric layer formed on the diamond layer, and electrodes formed on any of the substrate, the diamond layer and the piezoelectric layer. The piezoelectric layer is formed by the laser ablation method. The insertion loss of this acoustic wave device is small even in a high frequency range of several hundreds MHz to GHz. Therefore, the device can be used as a frequency filter, a resonator, a delay line, a convolver, a correlator and the like.
摘要翻译：提供一种制造具有较小的插入损耗并且以比常规的声表面波器件更高的频率工作的声表面波器件的方法。表面声波装置包括基板，形成在基板上的金刚石层，形成在金刚石层上的压电层，以及形成在基板，金刚石层和压电层之一上的电极。压电层通过激光烧蚀法形成。即使在几百MHz至GHz的高频范围内，该声波器件的插入损耗也很小。因此，该装置可以用作频率滤波器，谐振器，延迟线，卷积器，相关器等。

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