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    • 3. 发明授权
    • Surface inspecting apparatus and method for calibrating same
    • 表面检查装置及其校准方法
    • US08949043B2
    • 2015-02-03
    • US13202734
    • 2010-02-02
    • Kenji OkaKenji MitomoKenichiro Komeda
    • Kenji OkaKenji MitomoKenichiro Komeda
    • G01N21/94G01N21/93G01N21/95
    • G01N21/9501G01N21/93G01N2201/103
    • While an illumination optical system is irradiating the surface of a contaminated standard wafer with illumination light, this illumination light is scanned over the surface of the contaminated standard wafer, then detectors of a detection optical system each detect the light scattered from the surface of the contaminated standard wafer, next a predefined reference value in addition to detection results on the scattered light is used to calculate a compensation parameter “Comp” for detection sensitivity correction of photomultiplier tubes of the detectors, and the compensation parameter “Comp” is separated into a time-varying deterioration parameter “P”, an optical characteristics parameter “Opt”, and a sensor characteristics parameter “Lr”, and correspondingly managed. This makes is easy to calibrate the detection sensitivity.
    • 当照明光学系统用照明光照射污染的标准晶片的表面时,该照明光被扫描在受污染的标准晶片的表面上,然后检测光学系统的检测器每个都检测从污染的表面散射的光 标准晶片,接下来的预定参考值除了散射光上的检测结果之外,用于计算检测器的光电倍增管的检测灵敏度校正的补偿参数“Comp”,并将补偿参数“Comp”分为时间 - 变化劣化参数“P”,光学特性参数“Opt”和传感器特性参数“Lr”,并相应地管理。 这使得检测灵敏度变得容易。
    • 5. 发明授权
    • Inspection method and inspection apparatus
    • 检验方法和检验仪器
    • US08804108B2
    • 2014-08-12
    • US13202727
    • 2009-12-04
    • Kenji MitomoKenji Oka
    • Kenji MitomoKenji Oka
    • G01N21/00
    • G01N21/9501G01N21/94G01N21/956G01N2021/4707G01N2021/8822
    • This application relates to an inspection apparatus including: a stage which holds a specimen; an illumination optical system which illuminates a surface of the specimen held on the stage, with illumination light; a dark-field optical system which detects scattered light generated by the illumination light with which the specimen is illuminated; a photoelectric converter which converts the scattered light detected by the dark-field optical system, into an electric signal; an A/D converter which converts the electric signal obtained by conversion by the photoelectric converter, into a digital signal; a judgement unit which determines the dimension of a foreign substance on the surface of the specimen on the basis of a magnitude of the scattered light from the foreign substance; and a signal processor which determines an inspection condition by use of information on the scattered light from the specimen surface.
    • 本申请涉及一种检查装置,包括:保持试样的台架; 照明光学系统,用照明光照亮保持在舞台上的标本的表面; 一个暗场光学系统,用于检测被照射的照明光产生的散射光; 将由暗视场光学系统检测出的散射光转换成电信号的光电转换器; 将通过光电转换器的转换获得的电信号转换为数字信号的A / D转换器; 判断单元,其基于来自异物的散射光的大小来确定样品表面上的异物的尺寸; 以及信号处理器,其通过使用关于来自样本表面的散射光的信息来确定检查条件。
    • 6. 发明授权
    • Semiconductor light emitting device and method for manufacturing the same
    • 半导体发光器件及其制造方法
    • US08552445B2
    • 2013-10-08
    • US12808472
    • 2008-12-26
    • Yohei WakaiHiroaki MatsumuraKenji Oka
    • Yohei WakaiHiroaki MatsumuraKenji Oka
    • H01L33/00
    • H01L33/005H01L33/007H01L33/0079H01L33/20H01L33/22H01L33/36H01L33/382H01L33/44H01L2933/0016H01L2933/0058
    • A semiconductor light emitting device having high reliability and excellent light distribution characteristics is provided. Specifically, a semiconductor light emitting device 1 is provided with an n-electrode 50, which is arranged on a light extraction surface on the side opposite to the surface whereupon a semiconductor stack 40 is mounted on a substrate 10. A plurality of convexes are arranged on a first convex region 80 and a second convex region 90 on the light extraction surface. The second convex region 90 adjoins to the interface between the n-electrode 50 and the semiconductor stack 40, between the first convex region 80 and the n-electrode 50. The base end of the first convex arranged in the first convex region 80 is positioned closer to alight emitting layer 42 than the interface between the n-electrode 50 and the semiconductor stack 40, and the base end of the second convex arranged in the second convex region 90 is positioned closer to the interface between the n-electrode 50 and the semiconductor stack 40 than the base end of the first convex.
    • 提供了具有高可靠性和优异的光分布特性的半导体发光器件。 具体地,半导体发光器件1设置有n电极50,其被配置在与衬底10上安装有半导体堆叠40的表面相反侧的光提取表面上。多个凸起布置 在光提取表面上的第一凸区80和第二凸区90上。 第二凸区域90与第一凸区域80和n电极50之间的n电极50和半导体堆叠体40之间的界面相邻。布置在第一凸区域80中的第一凸部的基端位于 比n电极50和半导体堆叠40之间的界面更靠近发光层42,并且布置在第二凸区域90中的第二凸起的基端位于更靠近n电极50和第二凸起区域90之间的界面处。 半导体堆叠40比第一凸起的基端。
    • 7. 发明申请
    • VISUAL LINE ESTIMATING APPARATUS
    • 可视线估计装置
    • US20120076438A1
    • 2012-03-29
    • US13240200
    • 2011-09-22
    • Kenji OkaSotaro Tsukizawa
    • Kenji OkaSotaro Tsukizawa
    • G06K9/36
    • G06K9/0061G06K9/00838
    • The visual line estimating apparatus 200 comprises: an image inputting section 201 operable to take an image of a human; a visual line measurement section 202 operable to measure a direction of a visual line on the basis of the taken image; a visual line measuring result storing section 211 operable to store therein visual line measuring results previously measured; a representative value extracting section 212 operable to extract a previous representative value; and a visual line determining section 213 operable to judge whether or not a difference between the representative value and the visual line measuring result is lower than a predetermined threshold to determine a visual line estimating result from the representative value and the visual line measuring result.
    • 视线估计装置200包括:图像输入部201,用于拍摄人的图像; 视线测量部分202,可操作以基于所拍摄的图像测量视线的方向; 可视线测量结果存储部分211,用于存储先前测量的可视线测量结果; 代表值提取部212,用于提取先前的代表值; 以及视线确定部分213,其可操作以判断代表值和视线测量结果之间的差是否低于预定阈值,以根据代表值和视线测量结果确定视线估计结果。
    • 8. 发明申请
    • PUPIL DETECTION DEVICE AND PUPIL DETECTION METHOD
    • PUPIL检测装置和检测方法
    • US20120050516A1
    • 2012-03-01
    • US13318431
    • 2011-01-24
    • Sotaru TsukizawaKenji Oka
    • Sotaru TsukizawaKenji Oka
    • H04N7/18
    • G06K9/00604
    • A pupil detection apparatus and pupil detection method are provided that enable a high-accuracy detection result to be selected and output even when a gray scale image using near-infrared light is used. In a pupil detection apparatus (100), based on a calculated value of red-eye occurrence intensity that is relative brightness of brightness within a first pupil image detected by a pupil detection section (103) with respect to brightness of a peripheral image outside the first pupil image, and a correlation characteristic of red-eye occurrence intensity and a pupil detection accuracy value, a switching determination section (105) selectively outputs a detection result of the first pupil image or a detection result of a second pupil image detected by a pupil detection section (104). The pupil detection apparatus (100) has a first imaging pair comprising an imaging section (111) and an illumination section (112) separated by separation distance d1, and a second imaging pair whose separation distance d2 is greater than that of the first imaging pair. One pupil detection section (103) uses an image captured by the first imaging pair, and the other pupil detection section (104) uses an image captured by the second imaging pair.
    • 提供了一种瞳孔检测装置和光瞳检测方法,即使当使用使用近红外光的灰度图像时,也能够选择和输出高精度检测结果。 在瞳孔检测装置(100)中,基于由瞳孔检测部(103)检测出的第一瞳孔图像内的亮度相对亮度相对于外部图像外的周边图像的亮度的红眼发生强度的计算值 第一光瞳图像以及红眼发生强度和瞳孔检测精度值的相关特性,切换判定部(105)选择性地输出第一瞳孔图像的检测结果或由第二瞳孔图像检测到的第二瞳孔图像的检测结果 瞳孔检测部(104)。 瞳孔检测装置(100)具有第一成像对,其包括成像部(111)和以分离距离d1分隔开的照明部(112),以及第二成像对,其间隔距离d2大于第一成像对 。 一个光瞳检测部(103)使用由第一成像对拍摄的图像,另一光瞳检测部(104)使用由第二成像对拍摄的图像。
    • 9. 发明申请
    • SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME
    • 半导体发光器件及其制造方法
    • US20100264443A1
    • 2010-10-21
    • US12808472
    • 2008-12-26
    • Yohei WakaiHiroaki MatsumuraKenji Oka
    • Yohei WakaiHiroaki MatsumuraKenji Oka
    • H01L33/02
    • H01L33/005H01L33/007H01L33/0079H01L33/20H01L33/22H01L33/36H01L33/382H01L33/44H01L2933/0016H01L2933/0058
    • A semiconductor light emitting device having high reliability and excellent light distribution characteristics is provided. Specifically, a semiconductor light emitting device 1 is provided with an n-electrode 50, which is arranged on a light extraction surface on the side opposite to the surface whereupon a semiconductor stack 40 is mounted on a substrate 10. A plurality of convexes are arranged on a first convex region 80 and a second convex region 90 on the light extraction surface. The second convex region 90 adjoins to the interface between the n-electrode 50 and the semiconductor stack 40, between the first convex region 80 and the n-electrode 50. The base end of the first convex arranged in the first convex region 80 is positioned closer to alight emitting layer 42 than the interface between the n-electrode 50 and the semiconductor stack 40, and the base end of the second convex arranged in the second convex region 90 is positioned closer to the interface between the n-electrode 50 and the semiconductor stack 40 than the base end of the first convex.
    • 提供了具有高可靠性和优异的光分布特性的半导体发光器件。 具体地,半导体发光器件1设置有n电极50,其被配置在与衬底10上安装有半导体堆叠40的表面相反侧的光提取表面上。多个凸起布置 在光提取表面上的第一凸区80和第二凸区90上。 第二凸区域90与第一凸区域80和n电极50之间的n电极50和半导体堆叠体40之间的界面相邻。布置在第一凸区域80中的第一凸部的基端位于 比n电极50和半导体堆叠40之间的界面更靠近发光层42,并且布置在第二凸区域90中的第二凸起的基端位于更靠近n电极50和第二凸起区域90之间的界面处。 半导体堆叠40比第一凸起的基端。
    • 10. 发明申请
    • Bias adjustment of radio frequency unit in radar apparatus
    • 雷达设备射频单元的偏置调整
    • US20090102702A1
    • 2009-04-23
    • US12232067
    • 2008-09-10
    • Kenji OkaHiroshi ItoJun Ito
    • Kenji OkaHiroshi ItoJun Ito
    • G01S13/00
    • G01S7/4004G01S7/032
    • Disclosed is a method of bias adjustment for a millimeter wave radar apparatus that can efficiently and highly accurately adjust the bias of an MMIC used in a radio frequency circuit in the millimeter wave radar apparatus. The method comprises: providing a DA converter in a bias circuit in the millimeter wave radar apparatus comprising an antenna, a radio frequency unit, and a processing unit for performing transmission and reception processing of the radio frequency unit; connecting a signal generator in place of the antenna; and connecting a test processing unit and a control apparatus to the radio frequency unit, wherein the control apparatus applies an initial bias value in the form of a digital value to the MMIC, calculates the target value for the digital bias value based on the result of the measurement of the received signal, and takes the target value as the digital bias value for the production processing unit when the radio frequency characteristic of the received signal obtained by applying the target value to the MMIC lies within specified limits.
    • 公开了一种毫米波雷达装置的偏置调整方法,其能够高效且高精度地调整毫米波雷达装置中用于射频电路的MMIC的偏置。 该方法包括:在毫米波雷达装置的偏置电路中设置DA转换器,该雷达装置包括天线,射频单元和用于执行射频单元的发送和接收处理的处理单元; 连接信号发生器代替天线; 以及将测试处理单元和控制装置连接到所述射频单元,其中,所述控制装置将数字值形式的初始偏置值应用于所述MMIC,基于所述MMIC的结果来计算所述数字偏置值的目标值 当通过将目标值应用于MMIC而获得的接收信号的射频特性位于规定的限度内时,接收信号的测量,并将目标值作为生产处理单元的数字偏置值。