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1. 发明申请

US20140349416A1 METHOD FOR MANUFACTURING A MAGNETIC TUNNEL JUNCTION 审中-公开
标题翻译：制造磁性隧道结的方法
公开(公告)号：US20140349416A1
公开(公告)日：2014-11-27
申请号：US14458617
申请日：2014-08-13
申请人： Korea Institute of Science and Technology
发明人： Gyung-Min CHOI , Byoung Chul Min , Kyung Ho Shin
IPC分类号： H01L43/12
CPC分类号： H01L43/12 , B82Y25/00 , B82Y40/00 , G01R33/091 , G01R33/098 , G11C11/15 , G11C11/161 , H01F10/123 , H01F10/14 , H01F10/3254 , H01F10/3286 , H01F41/307 , H01L43/10 , Y10T428/115
摘要： The present invention relates to a magnetic tunnel junction device and a manufacturing method thereof. The magnetic tunnel junction device includes: i) a first magnetic layer including a compound having a chemical formula of (A100-xBx)100-yCy; ii) an insulating layer deposited on the first magnetic layer; and iii) a second magnetic layer deposited on the insulating layer and including a compound having a chemical formula of (A100-xBx)100-yCy. The first and second magnetic layers have perpendicular magnetic anisotropy, A and B are respectively metal elements, and C is at least one amorphizing element selected from a group consisting of boron (B), carbon (C), tantalum (Ta), and hafnium (Hf).
摘要翻译：磁隧道结装置及其制造方法技术领域本发明涉及磁隧道结装置及其制造方法。磁性隧道结装置包括：i）包含化学式为（A100-xBx）100-yCy的化合物的第一磁性层; ii）沉积在第一磁性层上的绝缘层; 和iii）沉积在绝缘层上并包含化学式为（A100-xBx）100-yCy的化合物的第二磁性层。第一和第二磁性层具有垂直的磁各向异性，A和B分别为金属元素，C为选自硼（B），碳（C），钽（Ta）和铪中的至少一种非晶化元素（Hf）。

2. 发明授权

US10014396B2 Spin control electronic device operable at room temperature 有权
公开(公告)号：US10014396B2
公开(公告)日：2018-07-03
申请号：US15487695
申请日：2017-04-14
申请人： Korea Institute of Science and Technology
发明人： Joon Yeon Chang , Tae Eon Park , Byoung Chul Min , Hyun Cheol Koo , Suk Hee Han
IPC分类号： H01L29/47 , H01L43/02 , H01L29/66 , H01L29/06
CPC分类号： H01L29/66984 , B82Y10/00 , H01L27/222 , H01L29/045 , H01L29/0673 , H01L29/417 , H01L29/41725 , H01L29/47 , H01L29/82 , H01L43/08
摘要： A spin control electronic device operable at room temperature according to an embodiment of the present invention includes a transfer channel that includes a low-dimensional nanostructure, the nanostructure being located on a substrate, having an elongate shape in a first direction and having a cross section, cut along a second direction that is perpendicular to the first direction, in the shape of a triangle; a source electrode located on the substrate and intersecting the transfer channel, the source electrode covering part of the transfer channel; and a drain electrode spaced apart from the source electrode on the substrate, the drain electrode intersecting the transfer channel and covering part of the transfer channel.

3. 发明申请

US20230005651A1 NANO SPINTRONIC DEVICE USING SPIN CURRENT OF FERROMAGNETIC MATERIAL AND HEAVY METAL CHANNEL 有权
公开(公告)号：US20230005651A1
公开(公告)日：2023-01-05
申请号：US17525855
申请日：2021-11-12
申请人： KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
发明人： Hyun Cheol Koo , Ki Hyuk Han , Dong Soo Han , Ouk Jae Lee , Byoung Chul Min , Hyung Jun Kim
IPC分类号： H01F10/32 , H01L43/02
摘要： A nano spintronic device for using the spin current of a ferromagnetic material and the spin current of a heavy metal channel. The device includes a lower channel layer, a free layer, a pinned layer, an insulating film layer, and an upper channel layer. When current flows upon application of power, electrons are divided into +y-polarized spins and −y-polarized spins in the lower channel layer, thereby generating torque in the free layer. The torque switches the magnetization direction of the free layer to an +y-axis direction or an −y-axis direction so that the free layer stores magnetization information according to the magnetization direction. When current flows in the upper channel layer, the current flows into the pinned layer so that electrons in the pinned layer are divided into +y-polarized spins and −y-polarized spins. The insulating layer insulates the free layer and the pinned layer from each other. When power is supplied, current flows in the upper channel layer and flows into the pinned layer, thereby inducing polarized spins in the pinned layer, resulting in the generation of torque in the free layer.

4. 发明授权

US09083279B2 Oscillator using spin transfer torque 有权
标题翻译：振荡器采用自旋转矩
公开(公告)号：US09083279B2
公开(公告)日：2015-07-14
申请号：US13898629
申请日：2013-05-21
申请人： KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
发明人： Jae Hyun Park , Byoung Chul Min , Kyung Ho Shin
IPC分类号： H03B15/00
CPC分类号： H03B15/006
摘要： An oscillator using spin transfer torque includes i) a pinned magnetic layer having a fixed magnetization direction, ii) a non-magnetic layer located on the pinned magnetic layer, and iii) a free magnetic layer located on the non-magnetic layer. The pinned magnetic layer includes i) a first part of the fixed magnetic layer and ii) a second part of the fixed magnetic layer located thereon. The first part of the fixed magnetic layer includes i) a first interface in contact with the second part of the fixed magnetic layer and ii) a second surface exposed to an outside while surrounding the first interface.
摘要翻译：使用自旋传递转矩的振荡器包括i）具有固定磁化方向的钉扎磁性层，ii）位于钉扎磁性层上的非磁性层，以及iii）位于非磁性层上的自由磁性层。钉扎磁性层包括i）固定磁性层的第一部分和ii）位于其上的固定磁性层的第二部分。固定磁性层的第一部分包括：i）与固定磁性层的第二部分接触的第一界面;以及ii）在围绕第一界面的同时暴露于外部的第二表面。

5. 发明授权

US12106879B2 Nano spintronic device using spin current of ferromagnetic material and heavy metal channel 有权
公开(公告)号：US12106879B2
公开(公告)日：2024-10-01
申请号：US17525855
申请日：2021-11-12
申请人： KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
发明人： Hyun Cheol Koo , Ki Hyuk Han , Dong Soo Han , Ouk Jae Lee , Byoung Chul Min , Hyung Jun Kim
IPC分类号： H01F10/32 , H10N50/80
CPC分类号： H01F10/329 , H10N50/80 , H01F10/3259
摘要： A nano spintronic device for using the spin current of a ferromagnetic material and the spin current of a heavy metal channel. The device includes a lower channel layer, a free layer, a pinned layer, an insulating film layer, and an upper channel layer. When current flows upon application of power, electrons are divided into +y-polarized spins and −y-polarized spins in the lower channel layer, thereby generating torque in the free layer. The torque switches the magnetization direction of the free layer to an +y-axis direction or an −y-axis direction so that the free layer stores magnetization information according to the magnetization direction. When current flows in the upper channel layer, the current flows into the pinned layer so that electrons in the pinned layer are divided into +y-polarized spins and −y-polarized spins. The insulating layer insulates the free layer and the pinned layer from each other. When power is supplied, current flows in the upper channel layer and flows into the pinned layer, thereby inducing polarized spins in the pinned layer, resulting in the generation of torque in the free layer.

6. 发明授权

US10998906B1 Logic device using spin torque 有权
公开(公告)号：US10998906B1
公开(公告)日：2021-05-04
申请号：US16774322
申请日：2020-01-28
申请人： KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
发明人： Kyoung Whan Kim , Dong Soo Han , Byoung Chul Min , Seok Min Hong , Hyun Cheol Koo , Hyung Jun Kim , Tae Eon Park , Ouk Jae Lee
IPC分类号： G11C11/16 , H03K19/16 , H03K19/20
摘要： A logic function device according to an embodiment of the present invention includes one or more function reconfiguring units having magnetization in one direction set by spin torque caused due to an function reconfiguring current, and an output terminal formed at an end thereof; and one or more input units formed on the function reconfiguring unit and having magnetization in the one direction set by spin torque caused due to an input current, wherein an output voltage of the output terminal is determined on the basis of whether a magnetization direction of the function reconfiguring unit and a magnetization direction of the input unit are parallel or anti-parallel.

7. 发明申请

US20210126639A1 LOGIC DEVICE USING SPIN TORQUE 有权
公开(公告)号：US20210126639A1
公开(公告)日：2021-04-29
申请号：US16774322
申请日：2020-01-28
申请人： KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
发明人： Kyoung Whan Kim , Dong Soo Han , Byoung Chul Min , Seok Min Hong , Hyun Cheol Koo , Hyung Jun Kim , Tae Eon Park , Ouk Jae Lee
IPC分类号： H03K19/16 , G11C11/16 , H03K19/20
摘要： A logic function device according to an embodiment of the present invention includes one or more function reconfiguring units having magnetization in one direction set by spin torque caused due to an function reconfiguring current, and an output terminal formed at an end thereof; and one or more input units formed on the function reconfiguring unit and having magnetization in the one direction set by spin torque caused due to an input current, wherein an output voltage of the output terminal is determined on the basis of whether a magnetization direction of the function reconfiguring unit and a magnetization direction of the input unit are parallel or anti-parallel.

8. 发明授权

US09355669B2 Perpendicularly magnetized thin film structure and method for manufacturing the same 有权
标题翻译：垂直磁化薄膜结构及其制造方法
公开(公告)号：US09355669B2
公开(公告)日：2016-05-31
申请号：US13678856
申请日：2012-11-16
申请人： KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
发明人： Gyung Min Choi , Byoung Chul Min , Kyung Ho Shin
IPC分类号： H01L43/10 , H01F10/32 , G11B5/64 , G11B5/72 , G11B5/66 , G11B5/84 , H01F10/12 , H01F41/32 , G11B5/65 , H01L43/12
CPC分类号： G11B5/645 , G11B5/65 , G11B5/66 , G11B5/72 , G11B5/84 , H01F10/123 , H01F10/3254 , H01F10/3286 , H01F41/32 , H01L43/10 , H01L43/12
摘要： A perpendicularly magnetized thin film structure and a method of manufacturing the perpendicularly magnetized thin film structure are provided. The perpendicularly magnetized thin film structure includes i) a base layer, ii) a magnetic layer located on the base layer and having an L10-crystalline structure, and iii) a metal oxide layer located on the magnetic layer.
摘要翻译：提供垂直磁化的薄膜结构和制造垂直磁化的薄膜结构的方法。垂直磁化的薄膜结构包括：i）基底层，ii）位于基底层上并具有L10结晶结构的磁性层，和iii）位于磁性层上的金属氧化物层。

9. 发明授权

US09263668B2 Method for manufacturing a magnetic tunnel junction device 有权
标题翻译：磁性隧道结装置的制造方法
公开(公告)号：US09263668B2
公开(公告)日：2016-02-16
申请号：US14458617
申请日：2014-08-13
申请人： Korea Institute of Science and Technology
发明人： Gyung-Min Choi , Byoung Chul Min , Kyung Ho Shin
IPC分类号： G01R33/09 , G11C11/15 , H01F10/32 , H01F41/22 , H01L43/12 , H01F10/14 , B82Y25/00 , B82Y40/00 , H01F41/30 , H01L43/10 , H01F10/12
CPC分类号： H01L43/12 , B82Y25/00 , B82Y40/00 , G01R33/091 , G01R33/098 , G11C11/15 , G11C11/161 , H01F10/123 , H01F10/14 , H01F10/3254 , H01F10/3286 , H01F41/307 , H01L43/10 , Y10T428/115
摘要： The present invention relates to a magnetic tunnel junction device and a manufacturing method thereof. The magnetic tunnel junction device includes: i) a first magnetic layer including a compound having a chemical formula of (A100-xBx)100-yCy; ii) an insulating layer deposited on the first magnetic layer; and iii) a second magnetic layer deposited on the insulating layer and including a compound having a chemical formula of (A100-xBx)100-yCy. The first and second magnetic layers have perpendicular magnetic anisotropy, A and B are respectively metal elements, and C is at least one amorphizing element selected from a group consisting of boron (B), carbon (C), tantalum (Ta), and hafnium (Hf).
摘要翻译：本发明涉及磁隧道结装置及其制造方法。磁性隧道结装置包括：i）包含化学式为（A100-xBx）100-yCy的化合物的第一磁性层; ii）沉积在第一磁性层上的绝缘层; 和iii）沉积在绝缘层上并包含化学式为（A100-xBx）100-yCy的化合物的第二磁性层。第一和第二磁性层具有垂直的磁各向异性，A和B分别为金属元素，C为选自硼（B），碳（C），钽（Ta）和铪中的至少一种非晶化元素（Hf）。

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