专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20190355601A1 PHASE FILTER FOR ENHANCED DEFECT DETECTION IN MULTILAYER STRUCTURE 审中-公开
公开(公告)号：US20190355601A1
公开(公告)日：2019-11-21
申请号：US16100818
申请日：2018-08-10
申请人： KLA-Tencor Corporation
发明人： Robert M. Danen , Dmitri G. Starodub
IPC分类号： H01L21/67 , G01N21/88 , G01N21/95 , G02B27/00 , H01L21/66 , G06F17/50
摘要： Disclosed are methods and apparatus for facilitating defect detection in a multilayer stack. The method includes selection of a set of structure parameters for modeling a particular multilayer stack and a particular defect contained within such particular multilayer stack and a set of operating parameters for an optical inspection system. Based on the set of structure and operating parameters, an electromagnetic simulation is performed of waves scattered from the particular multilayer stack and defect and arriving at a collection pupil of the optical inspection system. Based on the simulated waves at the collection pupil, a design of a phase filter having a plurality of positions for changing a plurality of phases within a plurality of corresponding positions of the collection pupil of the optical inspection tool is determined so as to compensate for an adverse effect of the particular multilayer stack on obtaining a defect signal for the defect within such particular multilayer stack and/or to enhance such defect signal. The design of the phase filter is then provided for fabrication or configuration of a phase filter inserted within the optical inspection system for detection of defects in multilayer stacks with the same structure parameters as the particular multilayer stack. Methods and systems for inspecting a multilayer stack for defects are also disclosed.

2. 发明授权

US09726617B2 Apparatus and methods for finding a best aperture and mode to enhance defect detection 有权
公开(公告)号：US09726617B2
公开(公告)日：2017-08-08
申请号：US14075488
申请日：2013-11-08
申请人： KLA-Tencor Corporation
发明人： Pavel Kolchin , Richard Wallingford , Lisheng Gao , Grace H. Chen , Markus B. Huber , Robert M. Danen
IPC分类号： G01N21/95
CPC分类号： G01N21/9501
摘要： Disclosed are methods and apparatus for optimizing a mode of an inspection tool. A first image or signal for each of a plurality of first apertures of the inspection tool is obtained, and each first image or signal pertains to a defect area. For each of a plurality of combinations of the first apertures and their first images or signals, a composite image or signal is obtained. Each composite image or signal is analyzed to determine an optimum one of the combinations of the first apertures based on a defect detection characteristic of each composite image.

3. 发明授权

US09645093B2 System and method for apodization in a semiconductor device inspection system 有权
公开(公告)号：US09645093B2
公开(公告)日：2017-05-09
申请号：US14930254
申请日：2015-11-02
申请人： KLA-Tencor Corporation
发明人： Jamie M. Sullivan , Gary Janik , Steve Cui , Rex Runyon , Dieter Wilk , Steve Short , Mikhail Haurylau , Qiang Q. Zhang , Grace Hsiu-Ling Chen , Robert M. Danen , Suwipin Martono , Shobhit Verma , Wenjian Cai , Meier Brender
IPC分类号： G01N21/00 , G02B27/58 , G01N21/88 , G01N21/95 , G01N21/956
CPC分类号： G01N21/8806 , G01N21/9501 , G01N21/95623 , G01N2021/8825 , G02B27/58
摘要： An inspection system with selectable apodization includes a selectably configurable apodization device disposed along an optical pathway of an optical system. The apodization device includes one or more apodization elements operatively coupled to one or more actuation stages. The one or more actuation stages are configured to selectably actuate the one or more apodization elements along one or more directions. The inspection system includes a control system communicatively coupled to the one or more actuation stages. The control system is configured to selectably control an actuation state of at the one or more apodization elements so as to apply a selected apodization profile formed with the one or more apodization elements.

4. 发明申请

US20140300890A1 APPARATUS AND METHODS FOR DETERMINING DEFECT DEPTHS IN VERTICAL STACK MEMORY 有权
标题翻译：用于确定垂直存储器中缺陷深度的装置和方法
公开(公告)号：US20140300890A1
公开(公告)日：2014-10-09
申请号：US14226745
申请日：2014-03-26
申请人： KLA-Tencor Corporation
发明人： Steven R. Lange , Robert M. Danen , Stefano Palomba
IPC分类号： G01N21/95
CPC分类号： G01N21/9501 , G01N21/8806 , G01N2021/1785
摘要： Disclosed are methods and apparatus for inspecting a vertical semiconductor stack of a plurality of layers is disclosed. The method includes (a) on a confocal tool, repeatedly focusing an illumination beam at a plurality of focus planes at a plurality of different depths of a first vertical stack, wherein a defect is located at an unknown one of the different depths and the illumination beam has a wavelength range between about 700 nm and about 950 nm, (b) generating a plurality of in-focus images for the different depths based on in-focus output light detected from the first vertical stack at the different depths, wherein out-of-focus output light is inhibited from reaching the detector of the confocal system and inhibited from contributing to generation of the in-focus images, and (c) determining which one of the different depths at which the defect is located in the first vertical stack based on the in-focus images.
摘要翻译：公开了用于检查多层的垂直半导体堆叠的方法和装置。该方法包括（a）在共焦工具上，在第一垂直堆叠的多个不同深度的多个聚焦平面处重复聚焦照明光束，其中，缺陷位于不同深度的未知光和照明光束具有约700nm至约950nm的波长范围，（b）基于在不同深度处从第一垂直堆叠检测到的聚焦输出光产生用于不同深度的多个对焦图像，其中，聚焦输出光被抑制到达共焦系统的检测器并被抑制以有助于生成对焦图像，以及（c）确定缺陷位于第一垂直堆叠中的不同深度中的哪一个基于对焦图像。

5. 发明授权

US10928740B2 Three-dimensional calibration structures and methods for measuring buried defects on a three-dimensional semiconductor wafer 有权
公开(公告)号：US10928740B2
公开(公告)日：2021-02-23
申请号：US15830232
申请日：2017-12-04
申请人： KLA-Tencor Corporation
发明人： Philip Measor , Robert M. Danen
IPC分类号： G03F7/20 , G03F7/00 , G03F1/84 , H01J37/28 , G01N21/95 , H01L21/67 , H01L21/66 , G01N21/93 , G01N21/956
摘要： A three-dimensional calibration structure for measuring buried defects on a semiconductor device is disclosed. The three-dimensional calibration structure includes a defect standard wafer (DSW) including one or more programmed surface defects. The three-dimensional calibration structure includes a planarized layer deposited on the DSW. The three-dimensional calibration structure includes a layer stack deposited on the planarized layer. The layer stack includes two or more alternating layers. The three-dimensional calibration structure includes a cap layer deposited on the layer stack. One or more air gaps are formed in the layer stack following deposition of the cap layer. The three-dimensional calibration structure includes one or more holes formed into at least one of the cap layer, the layer stack, or the planarized layer.

6. 发明申请

US20190257768A1 Determining Information for Defects on Wafers 审中-公开
公开(公告)号：US20190257768A1
公开(公告)日：2019-08-22
申请号：US16400644
申请日：2019-05-01
申请人： KLA-Tencor Corporation
发明人： Stefano Palomba , Pavel Kolchin , Mikhail Haurylau , Robert M. Danen , David W. Shortt
IPC分类号： G01N21/95 , G01N21/94 , G01N21/64
摘要： Systems and methods for determining information for defects on a wafer are provided. One system includes an illumination subsystem configured to direct light having one or more illumination wavelengths to a wafer. The one or more illumination wavelengths are selected to cause fluorescence from one or more materials on the wafer without causing fluorescence from one or more other materials on the wafer. The system also includes a detection subsystem configured to detect only the fluorescence from the one or more materials or to detect non-fluorescent light from the wafer without detecting the fluorescence from the one or more materials. In addition, the system includes a computer subsystem configured to determine information for defects on the wafer using output generated by the detection subsystem responsive to the detected fluorescence or the detected non-fluorescent light.

7. 发明授权

US10132760B2 Apparatus and methods for finding a best aperture and mode to enhance defect detection 有权
公开(公告)号：US10132760B2
公开(公告)日：2018-11-20
申请号：US15643333
申请日：2017-07-06
申请人： KLA-Tencor Corporation
发明人： Pavel Kolchin , Richard Wallingford , Lisheng Gao , Grace H. Chen , Markus B. Huber , Robert M. Danen
IPC分类号： G01N21/95
摘要： Disclosed are methods and apparatus for optimizing a mode of an inspection tool. A first image or signal for each of a plurality of first apertures of the inspection tool is obtained, and each first image or signal pertains to a defect area. For each of a plurality of combinations of the first apertures and their first images or signals, a composite image or signal is obtained. Each composite image or signal is analyzed to determine an optimum one of the combinations of the first apertures based on a defect detection characteristic of each composite image. In one aspect, determining an optimum one of the combinations of the first apertures includes selecting a set of one or more individual apertures that result in the highest signal to noise ratio for the defect area, and the method includes setting the optimum combination of the first apertures on the inspection tool and inspecting a sample using such optimum combination of the first apertures.

8. 发明申请

US20180224749A1 Three-Dimensional Calibration Structures and Methods for Measuring Buried Defects on a Three-Dimensional Semiconductor Wafer 审中-公开
公开(公告)号：US20180224749A1
公开(公告)日：2018-08-09
申请号：US15830232
申请日：2017-12-04
申请人： KLA-Tencor Corporation
发明人： Philip Measor , Robert M. Danen
IPC分类号： G03F7/20 , G03F7/00 , G03F1/84 , H01J37/28 , G01N21/95 , H01L21/67 , H01L21/66
CPC分类号： G03F7/7065 , G01N21/93 , G01N21/9501 , G01N21/9503 , G01N21/95607 , G03F1/84 , G03F7/0037 , H01J37/28 , H01J2237/2817 , H01L21/67288 , H01L22/12 , H01L22/26
摘要： A three-dimensional calibration structure for measuring buried defects on a semiconductor device is disclosed. The three-dimensional calibration structure includes a defect standard wafer (DSW) including one or more programmed surface defects. The three-dimensional calibration structure includes a planarized layer deposited on the DSW. The three-dimensional calibration structure includes a layer stack deposited on the planarized layer. The layer stack includes two or more alternating layers. The three-dimensional calibration structure includes a cap layer deposited on the layer stack. One or more air gaps are formed in the layer stack following deposition of the cap layer. The three-dimensional calibration structure includes one or more holes formed into at least one of the cap layer, the layer stack, or the planarized layer.

9. 发明授权

US09696264B2 Apparatus and methods for determining defect depths in vertical stack memory 有权
公开(公告)号：US09696264B2
公开(公告)日：2017-07-04
申请号：US14226745
申请日：2014-03-26
申请人： KLA-Tencor Corporation
发明人： Steven R. Lange , Robert M. Danen , Stefano Palomba
IPC分类号： G01N21/88 , G01N21/95 , G01N21/17
CPC分类号： G01N21/9501 , G01N21/8806 , G01N2021/1785
摘要： Disclosed are methods and apparatus for inspecting a vertical semiconductor stack of a plurality of layers is disclosed. The method includes (a) on a confocal tool, repeatedly focusing an illumination beam at a plurality of focus planes at a plurality of different depths of a first vertical stack, wherein a defect is located at an unknown one of the different depths and the illumination beam has a wavelength range between about 700 nm and about 950 nm, (b) generating a plurality of in-focus images for the different depths based on in-focus output light detected from the first vertical stack at the different depths, wherein out-of-focus output light is inhibited from reaching the detector of the confocal system and inhibited from contributing to generation of the in-focus images, and (c) determining which one of the different depths at which the defect is located in the first vertical stack based on the in-focus images.

10. 发明申请

US20160266047A1 WAFER AND RETICLE INSPECTION SYSTEMS AND METHODS FOR SELECTING ILLUMINATION PUPIL CONFIGURATIONS 有权
公开(公告)号：US20160266047A1
公开(公告)日：2016-09-15
申请号：US15158413
申请日：2016-05-18
申请人： KLA-Tencor Corporation
发明人： Grace H. Chen , Rudolf Brunner , Lisheng Gao , Robert M. Danen , Lu Chen
IPC分类号： G01N21/88 , G01N21/95
CPC分类号： G01N21/8806 , G01N21/8851 , G01N21/9501 , G01N21/956 , G01N21/95623 , G01N2021/8822 , G01N2021/95676 , G01N2201/061 , G01N2201/0638 , G01N2201/068 , G01N2201/12
摘要： In an optical inspection tool, an illumination aperture is opened at each of a plurality of aperture positions of an illumination pupil area one at a time across the illumination pupil area. For each aperture opening position, an incident beam is directed towards the illumination pupil area so as to selectively pass a corresponding ray bundle of the illumination beam at a corresponding set of one or more incident angles towards the sample and an output beam, which is emitted from the sample in response to the corresponding ray bundle of the incident beam impinging on the sample at the corresponding set of one or more incident angles, is detected. A defect detection characteristic for each aperture position is determined based on the output beam detected for each aperture position. An optimum aperture configuration is determined based on the determined defect detection characteristic for each aperture position.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式