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1. 发明授权

US6071373A Chemical bath having a uniform etchant overflow 失效
标题翻译：化学浴具有均匀的蚀刻剂溢流
公开(公告)号：US6071373A
公开(公告)日：2000-06-06
申请号：US870238
申请日：1997-06-05
申请人： Jung-ho Kang , Kwang-yul Lee , Dong-cho Maeng , Jong-sub Hwang
发明人： Jung-ho Kang , Kwang-yul Lee , Dong-cho Maeng , Jong-sub Hwang
IPC分类号： H01L21/306 , H01L21/00 , C23F1/02
CPC分类号： H01L21/67086 , H01L21/67075
摘要： A chemical bath of an overflow-type includes an inner bath which includes a plurality of holes on its sidewalls. The holes are formed in such a manner that they are spaced apart from the upper end of the inner bath at a predetermined distance. In this chemical bath, the chemical in the inner bath flows over the upper end of the inner bath into the outer bath and is simultaneously is discharged to the outer bath through the holes. Accordingly, unless either of the opposed sidewalls slopes lower than another by over a predetermined value, the chemical can flow continuously at nearly the same rate at both sidewalls of the inner bath. This reduces the difference of the etching rate between the respective wafers caused by the difference of the position of the wafers immersed in the chemical in the inner bath and leads to an improvement in the reliability of the etching process.
摘要翻译：溢流型化学浴包括在其侧壁上包括多个孔的内浴。孔以这样的方式形成，使得它们以预定距离与内槽的上端间隔开。在该化学浴中，内浴中的化学物质在内槽的上端流入外槽，同时通过孔排出到外槽。因此，除非相对的侧壁中的任一个相对于另一个侧壁的斜率低于预定值，否则化学物质能以几乎相同的速率以内浴的两个侧壁连续流动。这样就可以减少由浸没在内槽中的化学物质中的晶片的位置差异引起的相应晶片之间的蚀刻速率差异，导致蚀刻工艺的可靠性提高。

2. 发明授权

US5788800A Wet etching station and a wet etching method adapted for utilizing the same 失效
公开(公告)号：US5788800A
公开(公告)日：1998-08-04
申请号：US773062
申请日：1996-12-24
申请人： Kwang-yul Lee , Shang-seok Woo , Jung-ho Kang
发明人： Kwang-yul Lee , Shang-seok Woo , Jung-ho Kang
IPC分类号： G03F7/26 , H01L21/306 , H01L21/302
CPC分类号： H01L21/30604
摘要： A wet etching station and a wet etching method adapted for utilizing the same are provided. The wet etching station includes a bath apparatus containing a chemical etchant, with the bath apparatus having a plurality of cooling lines installed in the lower portion of the bath area, such that the cooling lines can make contact with the chemical etchant. Thus, a large-diameter wafer can uniformly etched.

3. 发明授权

US5904572A Wet etching station and a wet etching method adapted for utilizing the same 失效
标题翻译：湿蚀刻站和适用于其的湿式蚀刻方法
公开(公告)号：US5904572A
公开(公告)日：1999-05-18
申请号：US964410
申请日：1997-11-04
申请人： Kwang-yul Lee , Shang-seok Woo , Jung-ho Kang
发明人： Kwang-yul Lee , Shang-seok Woo , Jung-ho Kang
IPC分类号： H01L21/00 , H01L21/302
CPC分类号： H01L21/67086
摘要： A wet etching station and a wet etching method adapted for utilizing the same are provided. The wet etching station includes a bath apparatus containing a chemical etchant, with the bath apparatus having a plurality of cooling lines installed in the lower portion of the bath area, such that the cooling lines can make contact with the chemical etchant. Thus, a large-diameter wafer can uniformly etched.
摘要翻译：提供了适用于其的湿式蚀刻工位和湿式蚀刻方法。湿蚀刻站包括含有化学蚀刻剂的浴装置，该浴装置具有安装在浴区域下部的多条冷却线，使得冷却管线可以与化学蚀刻剂接触。因此，可以均匀地蚀刻大直径晶片。

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