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1. 发明授权

US09165631B2 OTP scheme with multiple magnetic tunnel junction devices in a cell 有权
标题翻译： OTP方案在单元中具有多个磁性隧道结装置
公开(公告)号：US09165631B2
公开(公告)日：2015-10-20
申请号：US13613125
申请日：2012-09-13
申请人： Jung Pill Kim , Taehyun Kim , Sungryul Kim , Kangho Lee
发明人： Jung Pill Kim , Taehyun Kim , Sungryul Kim , Kangho Lee
IPC分类号： G11C11/16 , G11C17/00 , G11C17/02 , G11C17/16 , G11C17/14
CPC分类号： G11C11/1675 , G11C11/161 , G11C11/1673 , G11C17/02 , G11C17/146 , G11C17/165 , G11C2213/78
摘要： A one time programming (OTP) apparatus unit cell includes multiple magnetic tunnel junctions (MTJs) and a shared access transistor coupled between the multiple MTJs and a fixed potential. Each of the multiple MTJs in a unit cell can be coupled to separate programming circuitry and/or separate sense amplifier circuitry so that they can be individually programmed and/or individually sensed. A logical combination from the separate sense amplifiers can be generated as an output of the unit cell.
摘要翻译：一次编程（OTP）装置单元包括多个磁隧道结（MTJ）和耦合在多个MTJ之间的共享存取晶体管和固定电位。单位单元中的多个MTJ中的每一个可以耦合到单独的编程电路和/或单独的读出放大器电路，使得它们可以被单独编程和/或单独感测。可以产生来自单独读出放大器的逻辑组合作为单位单元的输出。

2. 发明授权

US08923044B2 MTP MTJ device 有权
标题翻译： MTP MTJ设备
公开(公告)号：US08923044B2
公开(公告)日：2014-12-30
申请号：US13589426
申请日：2012-08-20
申请人： Xia Li , Kangho Lee , Jung Pill Kim , Taehyun Kim , Wah Nam Hsu , Seung H. Kang , Xiaochun Zhu , Wei-Chuan Chen , Sungryul Kim
发明人： Xia Li , Kangho Lee , Jung Pill Kim , Taehyun Kim , Wah Nam Hsu , Seung H. Kang , Xiaochun Zhu , Wei-Chuan Chen , Sungryul Kim
IPC分类号： G11C11/14 , G11C17/16 , H01L27/22 , G11C11/16 , H01L43/02 , H01L43/12
CPC分类号： H01L43/12 , G11C11/005 , G11C11/161 , G11C11/1675 , G11C11/1693 , G11C11/5607 , G11C17/02 , G11C17/165 , H01L27/222 , H01L27/228 , H01L43/02 , H01L43/08
摘要： Systems and methods for multiple-time programmable (MTP) devices. An MTP device includes a magnetic tunnel junction (MTJ) device programmable to a plurality of states based on voltage applied across the MTJ device. The plurality of states include a first resistance state corresponding to a first binary value stored in the MTJ device based on a first voltage, a second resistance state corresponding to a second binary value stored in the MTJ device based on a second voltage, a third resistance state corresponding to a breakdown of a barrier layer of the MTJ device based on a third voltage, and a fourth resistance state corresponding to an open fuse based on a fourth voltage.
摘要翻译：多时间可编程（MTP）设备的系统和方法。 MTP设备包括基于跨越MTJ设备施加的电压而可编程为多个状态的磁隧道结（MTJ）设备。多个状态包括基于第一电压而存储在MTJ装置中的第一二进制值的第一电阻状态，基于第二电压存储在MTJ装置中的与第二二进制值对应的第二电阻状态，第三电阻状态对应于基于第三电压的MTJ装置的势垒层的击穿，以及对应于基于第四电压的开路保险丝的第四电阻状态。

3. 发明申请

US20140071740A1 OTP SCHEME WITH MULTIPLE MAGNETIC TUNNEL JUNCTION DEVICES IN A CELL 有权
标题翻译： OTP方案与细胞中的多个磁性隧道连接装置
公开(公告)号：US20140071740A1
公开(公告)日：2014-03-13
申请号：US13613125
申请日：2012-09-13
申请人： Jung Pill Kim , Taehyun Kim , Sungryul Kim , Kangho Lee
发明人： Jung Pill Kim , Taehyun Kim , Sungryul Kim , Kangho Lee
IPC分类号： G11C11/16
CPC分类号： G11C11/1675 , G11C11/161 , G11C11/1673 , G11C17/02 , G11C17/146 , G11C17/165 , G11C2213/78
摘要： A one time programming (OTP) apparatus unit cell includes multiple magnetic tunnel junctions (MTJs) and a shared access transistor coupled between the multiple MTJs and a fixed potential. Each of the multiple MTJs in a unit cell can be coupled to separate programming circuitry and/or separate sense amplifier circuitry so that they can be individually programmed and/or individually sensed. A logical combination from the separate sense amplifiers can be generated as an output of the unit cell.
摘要翻译：一次编程（OTP）装置单元包括多个磁隧道结（MTJ）和耦合在多个MTJ之间的共享存取晶体管和固定电位。单位单元中的多个MTJ中的每一个可以耦合到单独的编程电路和/或单独的读出放大器电路，使得它们可以被单独编程和/或单独感测。可以产生来自单独读出放大器的逻辑组合作为单位单元的输出。

4. 发明申请

US20140048894A1 MTP MTJ DEVICE 有权
标题翻译： MTP MTJ设备
公开(公告)号：US20140048894A1
公开(公告)日：2014-02-20
申请号：US13589426
申请日：2012-08-20
申请人： Xia Li , Kangho Lee , Jung Pill Kim , Taehyun Kim , Wah Nam Hsu , Seung H. Kang , Xiaochun Zhu , Wei-Chuan Chen , Sungryul Kim
发明人： Xia Li , Kangho Lee , Jung Pill Kim , Taehyun Kim , Wah Nam Hsu , Seung H. Kang , Xiaochun Zhu , Wei-Chuan Chen , Sungryul Kim
IPC分类号： H01L43/12 , H01L43/02
CPC分类号： H01L43/12 , G11C11/005 , G11C11/161 , G11C11/1675 , G11C11/1693 , G11C11/5607 , G11C17/02 , G11C17/165 , H01L27/222 , H01L27/228 , H01L43/02 , H01L43/08
摘要： Systems and methods for multiple-time programmable (MTP) devices. An MTP device includes a magnetic tunnel junction (MTJ) device programmable to a plurality of states based on voltage applied across the MTJ device. The plurality of states include a first resistance state corresponding to a first binary value stored in the MTJ device based on a first voltage, a second resistance state corresponding to a second binary value stored in the MTJ device based on a second voltage, a third resistance state corresponding to a breakdown of a barrier layer of the MTJ device based on a third voltage, and a fourth resistance state corresponding to an open fuse based on a fourth voltage.
摘要翻译：多时间可编程（MTP）设备的系统和方法。 MTP设备包括基于跨越MTJ设备施加的电压而可编程为多个状态的磁隧道结（MTJ）设备。多个状态包括基于第一电压而存储在MTJ装置中的第一二进制值的第一电阻状态，基于第二电压存储在MTJ装置中的与第二二进制值对应的第二电阻状态，第三电阻状态对应于基于第三电压的MTJ装置的势垒层的击穿，以及对应于基于第四电压的开路保险丝的第四电阻状态。

5. 发明授权

US09147457B2 Reference cell repair scheme 有权
标题翻译：参考细胞修复方案
公开(公告)号：US09147457B2
公开(公告)日：2015-09-29
申请号：US13613038
申请日：2012-09-13
申请人： Jung Pill Kim , Taehyun Kim , Sungryul Kim
发明人： Jung Pill Kim , Taehyun Kim , Sungryul Kim
IPC分类号： G11C11/00 , G11C11/16 , G11C29/00
CPC分类号： G11C11/16 , G11C11/165 , G11C11/1673 , G11C29/787 , G11C29/832
摘要： In a magnetic random access memory (MRAM), numerous arrays of reference bit cells are coupled together by coupling their respective bit lines to a merged reference node. Pass gate circuitry coupled between the respective reference bit lines and the merged reference node is configured for selectively coupling or decoupling one or more of the reference bit lines to and from the merged reference node. The pass gate circuitry is controllable by programming one-time programmable devices coupled to the pass gate circuitry. The one-time programmable devices can be programmed to decouple flawed arrays of reference bit cells from the merged reference node or to select between redundant arrays of reference bit cells for coupling to the reference node.
摘要翻译：在磁随机存取存储器（MRAM）中，参考位单元的多个阵列通过将它们各自的位线耦合到合并的参考节点而耦合在一起。耦合在相应的参考位线和合并的参考节点之间的通过门电路被配置用于选择性地将一个或多个参考位线耦合或去耦合到合并的参考节点。传递门电路可通过编程耦合到通路电路的一次可编程器件来控制。一次性可编程器件可以被编程为将参考位单元的有缺陷的阵列与合并的参考节点去耦，或者在用于耦合到参考节点的参考位单元的冗余阵列之间进行选择。

6. 发明申请

US20140071738A1 REFERENCE CELL REPAIR SCHEME 有权
标题翻译：参考细胞修复方案
公开(公告)号：US20140071738A1
公开(公告)日：2014-03-13
申请号：US13613038
申请日：2012-09-13
申请人： Jung Pill Kim , Taehyun Kim , Sungryul Kim
发明人： Jung Pill Kim , Taehyun Kim , Sungryul Kim
IPC分类号： G11C11/16
CPC分类号： G11C11/16 , G11C11/165 , G11C11/1673 , G11C29/787 , G11C29/832
摘要： In a magnetic random access memory (MRAM), numerous arrays of reference bit cells are coupled together by coupling their respective bit lines to a merged reference node. Pass gate circuitry coupled between the respective reference bit lines and the merged reference node is configured for selectively coupling or decoupling one or more of the reference bit lines to and from the merged reference node. The pass gate circuitry is controllable by programming one-time programmable devices coupled to the pass gate circuitry. The one-time programmable devices can be programmed to decouple flawed arrays of reference bit cells from the merged reference node or to select between redundant arrays of reference bit cells for coupling to the reference node.
摘要翻译：在磁随机存取存储器（MRAM）中，参考位单元的多个阵列通过将它们各自的位线耦合到合并的参考节点而耦合在一起。耦合在相应的参考位线和合并的参考节点之间的通过门电路被配置用于选择性地将一个或多个参考位线耦合或去耦合到合并的参考节点。传递门电路可通过编程耦合到通路电路的一次可编程器件来控制。一次性可编程器件可以被编程为将参考位单元的有缺陷的阵列与合并的参考节点去耦，或者在用于耦合到参考节点的参考位单元的冗余阵列之间进行选择。

7. 发明授权

US09672885B2 MRAM word line power control scheme 有权
公开(公告)号：US09672885B2
公开(公告)日：2017-06-06
申请号：US13602829
申请日：2012-09-04
申请人： Sungryul Kim , Jung Pill Kim , Taehyun Kim , Seung H. Kang , Matthew M. Nowak , Manoj Bhatnagar
发明人： Sungryul Kim , Jung Pill Kim , Taehyun Kim , Seung H. Kang , Matthew M. Nowak , Manoj Bhatnagar
IPC分类号： G11C11/16 , G11C8/08
CPC分类号： G11C11/165 , G11C8/08 , G11C11/16 , G11C11/1653 , G11C11/1657 , G11C11/1673 , G11C11/1675 , G11C11/1693 , G11C11/1697
摘要： Systems, circuits and methods for controlling word line (WL) power levels at a WL of a Magnetoresistive Random Access Memory (MRAM). The disclosed power control scheme uses existing read/write commands and an existing power generation module associated with the MRAM to supply and control WL power levels, thereby eliminating the cost and increased die-size of schemes that control WL power through relatively large and expensive power control switches and control circuitry on the MRAM macro.

8. 发明申请

US20140063922A1 MRAM WORD LINE POWER CONTROL SCHEME 有权
标题翻译： MRAM WORD线路功率控制方案
公开(公告)号：US20140063922A1
公开(公告)日：2014-03-06
申请号：US13602829
申请日：2012-09-04
申请人： Sungryul Kim , Jung Pill Kim , Taehyun Kim , Seung H. Kang , Matthew M. Nowak , Manoj Bhatnagar
发明人： Sungryul Kim , Jung Pill Kim , Taehyun Kim , Seung H. Kang , Matthew M. Nowak , Manoj Bhatnagar
IPC分类号： G11C11/16
CPC分类号： G11C11/165 , G11C8/08 , G11C11/16 , G11C11/1653 , G11C11/1657 , G11C11/1673 , G11C11/1675 , G11C11/1693 , G11C11/1697
摘要： Systems, circuits and methods for controlling word line (WL) power levels at a WL of a Magnetoresistive Random Access Memory (MRAM). The disclosed power control scheme uses existing read/write commands and an existing power generation module associated, with the MRAM to supply and control WL power levels, thereby eliminating the cost and increased die-size of schemes that control WL power through relatively large and expensive power control switches and control circuitry on the MRAM macro.
摘要翻译：用于控制磁阻随机存取存储器（MRAM）的WL处的字线（WL）功率电平的系统，电路和方法。所公开的功率控制方案使用现有的读/写命令和与MRAM相关联的现有发电模块来提供和控制WL功率电平，从而消除通过相对较大和昂贵的方式控制WL功率的方案的成本和增加的芯片尺寸功率控制开关和MRAM宏上的控制电路。

9. 发明申请

US20140071739A1 REFERENCE LEVEL ADJUSTMENT SCHEME 审中-公开
标题翻译：参考水平调整方案
公开(公告)号：US20140071739A1
公开(公告)日：2014-03-13
申请号：US13613100
申请日：2012-09-13
申请人： Jung Pill Kim , Taehyun Kim , Sungryul Kim , Xia Li
发明人： Jung Pill Kim , Taehyun Kim , Sungryul Kim , Xia Li
IPC分类号： G11C11/16
CPC分类号： G11C11/1675 , G11C7/12 , G11C11/16
摘要： A tunable reference cell scheme for magnetic random access memory (MRAM) circuitry selectively couples reference cells and data cells to shared write driver circuitry. Magnetic tunnel junctions (MTJs) in the reference cells can be programmed to a selected magnetic orientation using the shared write driver circuitry. The programmed reference cells can be merged with other programmed reference cells and/or with fixed reference cells to produce a tunable reference level for comparison with MTJ data cells during a read operation. Sharing write driver circuitry between data cells and reference cells allows programming of reference cells without consuming increased area on a chip or macro.
摘要翻译：用于磁随机存取存储器（MRAM）电路的可调谐参考单元方案选择性地将参考单元和数据单元耦合到共享写入驱动器电路。可以使用共享写入驱动器电路将参考单元中的磁隧道结（MTJ）编程为选定的磁方向。编程的参考单元可以与其他编程的参考单元和/或与固定参考单元合并，以产生可读参考水平，以便在读操作期间与MTJ数据单元进行比较。在数据单元和参考单元之间共享写入驱动器电路可以编程参考单元，而不会消耗芯片或宏上的增加的面积。

10. 发明授权

US09047964B2 Multi-level memory cell using multiple magnetic tunnel junctions with varying MGO thickness 有权
标题翻译：使用具有不同MGO厚度的多个磁隧道结的多层存储单元
公开(公告)号：US09047964B2
公开(公告)日：2015-06-02
申请号：US13589315
申请日：2012-08-20
申请人： Kangho Lee , Taehyun Kim , Jung Pill Kim , Seung H. Kang
发明人： Kangho Lee , Taehyun Kim , Jung Pill Kim , Seung H. Kang
IPC分类号： G11C11/00 , G11C11/16 , G11C11/56 , H01L21/00
CPC分类号： G11C11/16 , G11C11/161 , G11C11/1659 , G11C11/1675 , G11C11/5607 , H01L21/00
摘要： A Multi-Level Memory Cell (MLC) using multiple Magnetic Tunnel Junction (MTJ) structures having one or more layers with varying thickness is disclosed. The multiple MTJ structures, which are vertically stacked and arranged in series, may have substantially identical area dimensions to minimize fabrication costs because one mask can be used to pattern the multiple MTJ structures. Further, varying the thicknesses associated with the one or more layers may provide the multiple MTJ structures with different switching current densities and thereby increase memory density and improve read and write operations. In one embodiment, the layers with the varying thicknesses may include tunnel barriers or magnesium oxide layers associated with the multiple MTJ structures and/or free layers associated with the multiple MTJ structures.
摘要翻译：公开了使用具有一层或多层具有变化厚度的多个磁隧道结（MTJ）结构的多层存储单元（MLC）。垂直堆叠和串联布置的多个MTJ结构可以具有基本上相同的面积尺寸以最小化制造成本，因为可以使用一个掩模来对多个MTJ结构进行图案化。此外，改变与一个或多个层相关联的厚度可以为多个MTJ结构提供不同的开关电流密度，从而增加存储器密度并改善读取和写入操作。在一个实施例中，具有变化厚度的层可以包括与多个MTJ结构相关联的隧道势垒或氧化镁层，和/或与多个MTJ结构相关联的自由层。

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