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1. 发明授权

US5859500A Metal ion plasma generator having rotatable anode plate 失效
标题翻译：具有可旋转阳极板的金属离子等离子体发生器
公开(公告)号：US5859500A
公开(公告)日：1999-01-12
申请号：US908981
申请日：1997-08-08
申请人： Jun Munemasa , Alexander Elkind , James R Treglio
发明人： Jun Munemasa , Alexander Elkind , James R Treglio
IPC分类号： C23C14/24 , H01J37/32 , H05H1/00
CPC分类号： H01J37/32055
摘要： In an apparatus in which a vacuum-arc discharge is generated between a metal cathode and anode plate and an evaporated substance from the cathode is supplied through openings on the anode plate, conventionally, a cleaning work to remove metal films deposited on the edges of the openings has to be done periodically, which limits continuous operation. The apparatus relating to the invention is provided with a rotary anode plate 14 on which a plurality of openings 17 are formed on a circumference concentric with the rotary axis of the anode plate. As the anode plate 14 rotates, the openings 17 are designed to come into a position to face the cathode. This construction can continue a longer operation with an extremely low deterioration of the performance without a maintenance work requiring a relief of the vacuum.
摘要翻译：在金属阴极和阳极板之间产生真空电弧放电并且通过阳极板上的开口供给来自阴极的蒸发物质的装置中，通常，用于除去沉积在阳极板的边缘上的金属膜的清洁工作必须定期进行开孔，这限制了连续的操作。本发明的装置设置有旋转阳极板14，多个开口17形成在与阳极板的旋转轴线同心的圆周上。当阳极板14旋转时，开口17被设计成进入与阴极相对的位置。这种结构可以持续更长的操作，其性能极低的劣化，而不需要减轻真空的维护工作。

2. 发明授权

US5896012A Metal ion plasma generator having magnetic field forming device located such that a triggering is between the magnetic field forming device and an anode 失效
标题翻译：具有磁场形成装置的金属离子等离子体发生器，其定位成使得在磁场形成装置和阳极之间触发
公开(公告)号：US5896012A
公开(公告)日：1999-04-20
申请号：US908985
申请日：1997-08-08
申请人： Jun Munemasa , Alexander Elkind , James R Treglio
发明人： Jun Munemasa , Alexander Elkind , James R Treglio
IPC分类号： C23C14/24 , C23C14/32 , H01J27/04 , H01J37/32 , H05B31/026 , H01J7/24
CPC分类号： H01J37/32055 , C23C14/325 , H01J27/04 , H01J37/3266
摘要： When a trigger discharge between a metal cathode and a trigger ring induces a vacuum-arc discharge between the cathode an anode, which vaporizes the substances of the cathode surface to produce a metal ion plasma, setting the pulse length of the arc pulse applied between the cathode and the anode to 1 msec or longer will soon short-circuit between the cathode and the trigger ring due to the vaporized substances deposited on the surface of the insulating ring. In order to solve this problem, a permanent magnet 36 for forming a magnetic field across a space between the anode 26 and the cathode 34 is provided close to the rear side of the trigger ring 35 so as to guide the substances vaporized from the cathode 34 toward the anode 26. Thereby, a longer continuous operation can be done with setting the arc pulse longer. moreover, since the permanent magnet 36 is provided at the foregoing position, the magnet does not receive a thermal load by the vacuum-arc discharge, which maintains a stable operation and makes the total construction compact.
摘要翻译：当金属阴极和触发环之间的触发放电在阴极和阴极表面的物质蒸发以产生金属离子等离子体的阴极之间引起真空电弧放电时，设置施加在金属阴极和触发环之间的电弧脉冲的脉冲长度阴极和阳极至1毫秒或更长时间将由于沉积在绝缘环表面上的汽化物质而在阴极和触发环之间短路。为了解决这个问题，在触发环35的后侧附近设置用于在阳极26和阴极34之间的空间形成磁场的永磁体36，以引导从阴极34蒸发的物质从而可以通过更长时间地设置电弧脉冲来进行更长的连续操作。此外，由于永久磁铁36设置在上述位置，所以磁体不会受到真空电弧放电的热负荷的影响，从而保持了稳定的动作，使总体结构紧凑。

3. 发明授权

US5269896A Cathodic arc deposition system 失效
标题翻译：阴极电弧沉积系统
公开(公告)号：US5269896A
公开(公告)日：1993-12-14
申请号：US889422
申请日：1992-05-28
申请人： Jun Munemasa , Tadashi Kumakiri , Tatsuya Tanaka
发明人： Jun Munemasa , Tadashi Kumakiri , Tatsuya Tanaka
IPC分类号： C23C14/32 , H01J37/32
CPC分类号： H01J37/32055 , C23C14/325
摘要： A cathodic arc deposition system includes a cathode made of a film forming material, a shield surrounding a circumferential side of the cathode with a gap, a vacuum chamber having the cathode and the shield therein, and a substrate to have deposited at a surface thereof an ionized film forming material by generating an arc discharge between the cathode and the anode. Either the cathode or the shield is adjusted in height so as to keep the upper edge of the shield at substantially the same vertical level as the upper edge of the cathode.

4. 发明授权

US09273387B2 Member covered with hard coating 有权
标题翻译：会员覆盖硬涂层
公开(公告)号：US09273387B2
公开(公告)日：2016-03-01
申请号：US14119339
申请日：2012-06-15
申请人： Kenji Yamamoto , Yoshiro Iwai , Jun Munemasa
发明人： Kenji Yamamoto , Yoshiro Iwai , Jun Munemasa
IPC分类号： C23C14/06 , C23C14/32 , C23C30/00 , F01D5/28
CPC分类号： C23C14/0641 , C23C14/0664 , C23C14/325 , C23C30/00 , F01D5/288 , F05C2253/12 , F05D2300/506 , Y02T50/672
摘要： A member covered with a hard coating according to the present invention has a hard coating which has excellent erosion resistance, a hardness (H) of 20 GPa or more as measured using a nano indenter and a ratio of the hardness (H) to a Young's modulus (E) (i.e., H/E) of 0.06 or more, and comprises Ti and/or Cr, Al and N, wherein the total amount of Ti and Cr relative to the total amount of elements other than non-metal elements in the coating is 0.1 to 0.6 inclusive in terms of atomic ratio and the amount of Al relative to the total amount of the elements other than the non-metal elements in the coating is 0.4 to 0.7 inclusive in terms of atomic ratio.
摘要翻译：根据本发明的覆盖有硬涂层的构件具有硬涂层，其具有优异的耐侵蚀性，使用纳米压头测量的硬度（H）为20GPa或更大，并且硬度（H）与杨氏模量（E）（即H / E）为0.06以上，并且包含Ti和/或Cr，Al和N，其中Ti和Cr的总量相对于非金属元素以外的元素的总量以原子比计，涂层为0.1〜0.6，相对于涂层中的非金属元素以外的元素的总量，Al的原子比为0.4〜0.7。

5. 发明授权

US07384484B2 Substrate processing method, substrate processing apparatus and substrate processing system 失效
标题翻译：基板加工方法，基板处理装置和基板处理系统
公开(公告)号：US07384484B2
公开(公告)日：2008-06-10
申请号：US10700020
申请日：2003-11-03
申请人： Yusuke Muraoka , Kimitsugu Saito , Tomomi Iwata , Eiji Fukatsu , Ikuo Mizobata , Hiroyuki Ueno , Yasuo Okuyama , Takashi Gama , Yoshihiko Sakashita , Katsumi Watanabe , Jun Munemasa , Hisanori Oshiba , Shogo Sarumaru
发明人： Yusuke Muraoka , Kimitsugu Saito , Tomomi Iwata , Eiji Fukatsu , Ikuo Mizobata , Hiroyuki Ueno , Yasuo Okuyama , Takashi Gama , Yoshihiko Sakashita , Katsumi Watanabe , Jun Munemasa , Hisanori Oshiba , Shogo Sarumaru
IPC分类号： B05C13/02 , B05B1/26 , B05B7/00 , C23C14/00 , B08B3/00 , H01L21/677
CPC分类号： H01L21/67051 , G11B7/261 , G11B7/265 , H01L21/67028 , Y10S134/902
摘要： After subjected to a developing process, a rinsing process and a replacing process in this order in a developing unit 10A, 10B, a substrate W wet with an anti-drying solution is wet-transported to a supercritical drying unit 20 by a primary transport robot 30. The supercritical drying unit 20 performs a high-pressure drying process (supercritical drying process) in a dedicated manner. Accordingly, by virtue of the presence of the anti-drying solution, the substrate W is effectively prevented from becoming air-dry during the transportation of the substrate W.
摘要翻译：在显影单元10A，10B中经过显影处理之后，依次进行漂洗处理和替换处理，用防干燥溶液湿润的基板W通过初级干燥器湿式输送到超临界干燥单元20 运输机器人30。超临界干燥单元20以专用的方式进行高压干燥处理（超临界干燥处理）。因此，通过存在防干燥溶液，能够有效地防止基板W在基板W的输送过程中变得风干。

6. 发明授权

US5404017A Ion implantation apparatus 失效
标题翻译：离子注入装置
公开(公告)号：US5404017A
公开(公告)日：1995-04-04
申请号：US84145
申请日：1993-07-01
申请人： Noriyuki Inuishi , Tadashi Kumakiri , Kouichirou Akari , Jun Munemasa
发明人： Noriyuki Inuishi , Tadashi Kumakiri , Kouichirou Akari , Jun Munemasa
IPC分类号： C23C14/48 , H01J27/08 , H01J37/317
CPC分类号： H01J27/08 , H01J37/3171 , H01J2237/0822
摘要： An ion implantation apparatus is intended to perform the ion implantation for the desired surface of a target irrespective of the surface geometry thereof, and to simplify the structure. The apparatus includes a vacuum chamber, and a plurality of arc ion sources for emitting ion beams on the surface of the target disposed within the vacuum chamber. A plurality of arc ion source mounting openings are formed on the vacuum chamber. One or more of arc ion sources necessary for emitting ion beams on the desired surface of the target are airtightly mounted on the openings opposed to the above surface.
摘要翻译：离子注入装置旨在对靶的期望表面执行离子注入，而与其表面几何形状无关，并且简化结构。该设备包括一个真空室和多个用于在设置在该真空室内的靶的表面上发射离子束的电弧离子源。在真空室上形成多个电弧离子源安装孔。在靶的期望表面上发射离子束所需的一个或多个电弧离子源气密地安装在与上述表面相对的开口上。

7. 发明授权

US07335596B2 Method for fabricating copper-based interconnections for semiconductor device 失效
标题翻译：制造半导体器件铜基互连的方法
公开(公告)号：US07335596B2
公开(公告)日：2008-02-26
申请号：US11157862
申请日：2005-06-22
申请人： Takashi Onishi , Tatsuya Yasunaga , Hideo Fujii , Tetsuya Yoshikawa , Jun Munemasa
发明人： Takashi Onishi , Tatsuya Yasunaga , Hideo Fujii , Tetsuya Yoshikawa , Jun Munemasa
IPC分类号： H01L21/44
CPC分类号： H01L21/2855 , H01L21/76882
摘要： Cu-based interconnections are fabricated in a semiconductor device by depositing a thin film of Cu or Cu alloy on a dielectric film by sputtering, the dielectric film having trenches and/or via holes at least one groove and being arranged on or above a substrate, and carrying out high temperature and high pressure treatment to thereby embed the Cu or Cu alloy into the trenches and/or via holes, in which the sputtering is carried out at a substrate temperature of −20° C. to 0° C. using, as a sputtering gas, a gaseous mixture containing hydrogen gas and an inert gas in a ratio in percentage of 5:95 to 20:80.
摘要翻译：在半导体器件中通过溅射在电介质膜上沉积Cu或Cu合金薄膜来形成Cu基互连，所述电介质膜具有至少一个沟槽和/或通孔至少一个沟槽并且布置在衬底上或上方，进行高温高压处理，从而将Cu或Cu合金嵌入沟槽和/或通孔中，在基板温度为-20℃〜0℃下进行溅射，作为溅射气体，含有比例为5:95至20:80的氢气和惰性气体的气体混合物。

8. 发明申请

US20060019496A1 Method for fabricating copper-based interconnections for semiconductor device 失效
标题翻译：制造半导体器件铜基互连的方法
公开(公告)号：US20060019496A1
公开(公告)日：2006-01-26
申请号：US11157862
申请日：2005-06-22
申请人： Takashi Onishi , Tatsuya Yasunaga , Hideo Fujii , Tetsuya Yoshikawa , Jun Munemasa
发明人： Takashi Onishi , Tatsuya Yasunaga , Hideo Fujii , Tetsuya Yoshikawa , Jun Munemasa
IPC分类号： H01L21/4763 , H01L21/44
CPC分类号： H01L21/2855 , H01L21/76882
摘要： Cu-based interconnections are fabricated in a semiconductor device by depositing a thin film of Cu or Cu alloy on a dielectric film by sputtering, the dielectric film having trenches and/or via holes at least one groove and being arranged on or above a substrate, and carrying out high temperature and high pressure treatment to thereby embed the Cu or Cu alloy into the trenches and/or via holes, in which the sputtering is carried out at a substrate temperature of −20° C. to 0° C. using, as a sputtering gas, a gaseous mixture containing hydrogen gas and an inert gas in a ratio in percentage of 5:95 to 20:80.
摘要翻译：在半导体器件中通过溅射在电介质膜上沉积Cu或Cu合金薄膜来形成Cu基互连，所述电介质膜具有至少一个沟槽和/或通孔至少一个沟槽并且布置在衬底上或上方，进行高温高压处理，从而将Cu或Cu合金嵌入沟槽和/或通孔中，在基板温度为-20℃〜0℃下进行溅射，作为溅射气体，含有比例为5:95至20:80的氢气和惰性气体的气体混合物。

9. 发明申请

US20140200132A1 MEMBER COVERED WITH HARD COATING 有权
标题翻译：会员覆盖硬涂层
公开(公告)号：US20140200132A1
公开(公告)日：2014-07-17
申请号：US14119339
申请日：2012-06-15
申请人： Kenji Yamamoto , Yoshiro Iwai , Jun Munemasa
发明人： Kenji Yamamoto , Yoshiro Iwai , Jun Munemasa
IPC分类号： C23C14/06
CPC分类号： C23C14/0641 , C23C14/0664 , C23C14/325 , C23C30/00 , F01D5/288 , F05C2253/12 , F05D2300/506 , Y02T50/672
摘要： A member covered with a hard coating according to the present invention has a hard coating which has excellent erosion resistance, a hardness (H) of 20 GPa or more as measured using a nano indenter and a ratio of the hardness (H) to a Young's modulus (E) (i.e., H/E) of 0.06 or more, and comprises Ti and/or Cr, Al and N, wherein the total amount of Ti and Cr relative to the total amount of elements other than non-metal elements in the coating is 0.1 to 0.6 inclusive in terms of atomic ratio and the amount of Al relative to the total amount of the elements other than the non-metal elements in the coating is 0.4 to 0.7 inclusive in terms of atomic ratio.
摘要翻译：根据本发明的覆盖有硬涂层的构件具有硬涂层，其具有优异的耐侵蚀性，使用纳米压头测量的硬度（H）为20GPa或更大，并且硬度（H）与杨氏模量（E）（即H / E）为0.06以上，并且包含Ti和/或Cr，Al和N，其中Ti和Cr的总量相对于非金属元素以外的元素的总量以原子比计，涂层为0.1〜0.6，相对于涂层中的非金属元素以外的元素的总量，Al的原子比为0.4〜0.7。

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