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1. 发明申请

US20080083673A1 METHOD AND APPARATUS FOR TREATMENT OF PLATING SOLUTIONS 失效
公开(公告)号：US20080083673A1
公开(公告)日：2008-04-10
申请号：US11538467
申请日：2006-10-04
申请人： Josh H. Golden , Timothy Weidman , Peter Porshnev , Kalyan Sista , Nikhil Krishnan
发明人： Josh H. Golden , Timothy Weidman , Peter Porshnev , Kalyan Sista , Nikhil Krishnan
IPC分类号： C02F1/42
CPC分类号： C23C18/1617 , C02F1/42 , C25D21/22 , Y10S210/912
摘要： Embodiments herein provide waste abatement apparatuses and methods for treating waste solutions derived from depleted or used plating solutions, such as from an electroless deposition process or an electrochemical plating process. The waste abatement systems and processes may be used to treat the waste solutions by lowering the concentration of, if not completely removing, metal ions or reducing agents that are dissolved within the waste solution. In one embodiment of a demetallization process, a waste solution may be exposed to a heating element (e.g., copper coil) contained within an immersion tank. In another embodiment, the waste solution may be exposed to a catalyst having high surface area (e.g., steel wool or other metallic wool) within an immersion tank. In another embodiment, the waste solution may be flowed through a removable, catalytic conduit (e.g., copper tubing) having an internal catalytic surface.

2. 发明申请

US20080083623A1 METHOD AND APPARATUS FOR TREATMENT OF PLATING SOLUTIONS 审中-公开
标题翻译：用于处理镀层解决方案的方法和装置
公开(公告)号：US20080083623A1
公开(公告)日：2008-04-10
申请号：US11538470
申请日：2006-10-04
申请人： Josh H. Golden , Timothy Weidman , Peter Porshnev , Kalyan Sista , Nikhil Krishnan
发明人： Josh H. Golden , Timothy Weidman , Peter Porshnev , Kalyan Sista , Nikhil Krishnan
IPC分类号： B01D43/00
CPC分类号： C02F9/00 , C02F1/20 , C02F1/42 , C02F1/66 , C02F1/705 , C02F2101/20 , C02F2101/22 , C02F2103/16 , C22B3/22 , C22B7/006 , Y02P10/234
摘要： Embodiments herein provide waste abatement apparatuses and methods for treating waste solutions derived from depleted or used plating solutions, such as from an electroless deposition process or an electrochemical plating process. The waste abatement systems and processes may be used to treat the waste solutions by lowering the concentration of, if not completely removing, metal ions or reducing agents that are dissolved within the waste solution. In one embodiment of a demetallization process, a waste solution may be exposed to a heating element (e.g., copper coil) contained within an immersion tank. In another embodiment, the waste solution may be exposed to a catalyst having high surface area (e.g., steel wool or other metallic wool) within an immersion tank. In another embodiment, the waste solution may be flowed through a removable, catalytic conduit (e.g., copper tubing) having an internal catalytic surface.
摘要翻译：本文的实施方案提供了用于处理源自贫化或使用的电镀溶液的废溶液的废物消除装置和方法，例如来自无电镀沉积工艺或电化学电镀工艺。废物消除系统和方法可用于通过降低溶解在废液中的金属离子或还原剂的浓度（如果不是完全除去）来处理废溶液。在脱金属过程的一个实施方案中，废溶液可能暴露于包含在浸没池内的加热元件（例如铜线圈）。在另一个实施方案中，废液可以暴露于浸渍槽内具有高表面积的催化剂（例如，钢丝绒或其它金属羊毛）。在另一个实施例中，废溶液可以流过具有内部催化表面的可移除的催化导管（例如铜管）。

3. 发明授权

US07601264B2 Method for treatment of plating solutions 失效
标题翻译：电镀液处理方法
公开(公告)号：US07601264B2
公开(公告)日：2009-10-13
申请号：US11538467
申请日：2006-10-04
申请人： Josh H. Golden , Timothy Weidman , Peter Porshnev , Kalyan Sista , Nikhil Krishnan
发明人： Josh H. Golden , Timothy Weidman , Peter Porshnev , Kalyan Sista , Nikhil Krishnan
IPC分类号： C02F1/28 , C02F1/42
CPC分类号： C23C18/1617 , C02F1/42 , C25D21/22 , Y10S210/912
摘要： Embodiments herein provide waste abatement apparatuses and methods for treating waste solutions derived from depleted or used plating solutions, such as from an electroless deposition process or an electrochemical plating process. The waste abatement systems and processes may be used to treat the waste solutions by lowering the concentration of, if not completely removing, metal ions or reducing agents that are dissolved within the waste solution. In one embodiment of a demetallization process, a waste solution may be exposed to a heating element (e.g., copper coil) contained within an immersion tank. In another embodiment, the waste solution may be exposed to a catalyst having high surface area (e.g., steel wool or other metallic wool) within an immersion tank. In another embodiment, the waste solution may be flowed through a removable, catalytic conduit (e.g., copper tubing) having an internal catalytic surface.
摘要翻译：本文的实施方案提供了用于处理源自贫化或使用的电镀溶液的废溶液的废物消除装置和方法，例如来自无电镀沉积工艺或电化学电镀工艺。废物消除系统和方法可用于通过降低溶解在废液中的金属离子或还原剂的浓度（如果不是完全除去）来处理废溶液。在脱金属过程的一个实施方案中，废溶液可能暴露于包含在浸没池内的加热元件（例如铜线圈）。在另一个实施方案中，废液可以暴露于浸渍槽内具有高表面积的催化剂（例如，钢丝绒或其它金属羊毛）。在另一个实施例中，废溶液可以流过具有内部催化表面的可移除的催化导管（例如铜管）。

4. 发明授权

US07970483B2 Methods and apparatus for improving operation of an electronic device manufacturing system 有权
标题翻译：改善电子装置制造系统运行的方法和装置
公开(公告)号：US07970483B2
公开(公告)日：2011-06-28
申请号：US11685993
申请日：2007-03-14
申请人： Sebastien Raoux , Mark W. Curry , Peter Porshnev , Allen Fox
发明人： Sebastien Raoux , Mark W. Curry , Peter Porshnev , Allen Fox
IPC分类号： G05B13/04 , G06F19/00
CPC分类号： F04B49/00
摘要： In one aspect of the invention, a method for the improved operation of an electronic device manufacturing system is provided. The method includes providing information to an interface coupled to an electronic device manufacturing system having parameters, processing the information to predict a first parameter, and providing an instruction related to at least a second parameter of the electronic device manufacturing system wherein the instruction is based on the predicted first parameter. Numerous other aspects are provided.
摘要翻译：在本发明的一个方面，提供了一种用于电子设备制造系统的改进操作的方法。该方法包括向耦合到具有参数的电子设备制造系统的接口提供信息，处理该信息以预测第一参数，以及提供与该电子设备制造系统的至少第二参数相关的指令，其中该指令基于预测的第一个参数。提供了许多其他方面。

5. 发明授权

US07532952B2 Methods and apparatus for pressure control in electronic device manufacturing systems 失效
标题翻译：电子设备制造系统中压力控制的方法和装置
公开(公告)号：US07532952B2
公开(公告)日：2009-05-12
申请号：US11686012
申请日：2007-03-14
申请人： Mark W. Curry , Sebastien Raoux , Peter Porshnev
发明人： Mark W. Curry , Sebastien Raoux , Peter Porshnev
IPC分类号： G05D11/00
CPC分类号： F04B49/00
摘要： In one aspect, improved methods and apparatus for pressure control in an electronic device manufacturing system are provided. The method includes acquiring information related to a current state of the electronic device manufacturing system, determining a desired value of a first parameter of the electronic device manufacturing system based on the acquired information and adjusting at least one parameter of a pump to obtain the desired value of the first parameter of the electronic device manufacturing system.
摘要翻译：一方面，提供了一种用于电子设备制造系统中的压力控制的改进方法和装置。该方法包括获取与电子设备制造系统的当前状态相关的信息，基于所获取的信息确定电子设备制造系统的第一参数的期望值，并且调整泵的至少一个参数以获得期望值的电子设备制造系统的第一个参数。

6. 发明授权

US08642128B2 Enhanced scavenging of residual fluorine radicals using silicon coating on process chamber walls 有权
标题翻译：使用硅涂层在工艺室壁上增强清除残余氟自由基
公开(公告)号：US08642128B2
公开(公告)日：2014-02-04
申请号：US12758167
申请日：2010-04-12
申请人： Dongwon Choi , Dong Hyung Lee , Tze Poon , Manoj Vellaikal , Peter Porshnev , Majeed Foad
发明人： Dongwon Choi , Dong Hyung Lee , Tze Poon , Manoj Vellaikal , Peter Porshnev , Majeed Foad
IPC分类号： C23C16/00
CPC分类号： H01J37/32467 , C23C16/4404 , H01J37/32412 , H01J37/3244 , H01J37/32449 , H01J37/32477 , H01J37/32862 , H01J37/32871 , H01L21/2236
摘要： Methods and apparatus for processing a substrate are provided herein. In some embodiments, an apparatus for substrate processing includes a process chamber having a chamber body defining an inner volume; and a silicon containing coating disposed on an interior surface of the chamber body, wherein an outer surface of the silicon containing coating is at least 35 percent silicon (Si) by atom. In some embodiments, a method for forming a silicon containing coating in a process chamber includes providing a first process gas comprising a silicon containing gas to an inner volume of the process chamber; and forming a silicon containing coating on an interior surface of the process chamber, wherein an outer surface of the silicon containing coating is at least 35 percent silicon.
摘要翻译：本文提供了用于处理衬底的方法和设备。在一些实施例中，一种用于衬底处理的装置包括具有限定内容积的室主体的处理室; 以及设置在所述室主体的内表面上的含硅涂层，其中所述含硅涂层的外表面为原子上至少35％的硅（Si）。在一些实施例中，在处理室中形成含硅涂层的方法包括向处理室的内部容积提供包括含硅气体的第一工艺气体; 以及在所述处理室的内表面上形成含硅涂层，其中所述含硅涂层的外表面为至少35％的硅。

7. 发明申请

US20070260351A1 METHODS AND APPARATUS FOR PRESSURE CONTROL IN ELECTRONIC DEVICE MANUFACTURING SYSTEMS 失效
标题翻译：电子设备制造系统中压力控制的方法和装置
公开(公告)号：US20070260351A1
公开(公告)日：2007-11-08
申请号：US11686012
申请日：2007-03-14
申请人： MARK CURRY , Sebastien Raoux , Peter Porshnev
发明人： MARK CURRY , Sebastien Raoux , Peter Porshnev
IPC分类号： G05D16/00 , G06F19/00
CPC分类号： F04B49/00
摘要： In one aspect, improved methods and apparatus for pressure control in an electronic device manufacturing system are provided. The method includes acquiring information related to a current state of the electronic device manufacturing system, determining a desired value of a first parameter of the electronic device manufacturing system based on the acquired information and adjusting at least one parameter of a pump to obtain the desired value of the first parameter of the electronic device manufacturing system.
摘要翻译：一方面，提供了一种用于电子设备制造系统中的压力控制的改进方法和装置。该方法包括获取与电子设备制造系统的当前状态相关的信息，基于所获取的信息确定电子设备制造系统的第一参数的期望值，并且调整泵的至少一个参数以获得期望值的电子设备制造系统的第一个参数。

8. 发明授权

US07838399B2 Plasma immersed ion implantation process using balanced etch-deposition process 有权
标题翻译：使用平衡蚀刻沉积工艺的等离子体浸入式离子注入工艺
公开(公告)号：US07838399B2
公开(公告)日：2010-11-23
申请号：US11748876
申请日：2007-05-15
申请人： Peter Porshnev , Majeed A. Foad
发明人： Peter Porshnev , Majeed A. Foad
IPC分类号： H01L21/26 , H01L21/42
CPC分类号： H01L21/2236 , H01L29/66575
摘要： Methods for implanting ions into a substrate by a plasma immersion ion implanting process are provided. In one embodiment, a method for implanting ions into a substrate includes providing a substrate into a processing chamber, generating a plasma from a gas mixture including a reacting gas and a etching gas in the chamber, adjusting the ratio between the reacting gas and the etching gas in the supplied gas mixture and implanting ions from the plasma into the substrate. In another embodiment, the method includes providing a substrate into a processing chamber, supplying a gas mixture including reacting gas and a halogen containing reducing gas into the chamber, forming a plasma from the gas mixture, gradually increasing the ratio of the etching gas in the gas mixture, and implanting ions from the gas mixture into the substrate.
摘要翻译：提供了通过等离子体浸没离子注入工艺将离子注入衬底的方法。在一个实施例中，用于将离子注入到衬底中的方法包括将衬底提供到处理室中，从腔室中的包括反应气体和蚀刻气体的气体混合物产生等离子体，调节反应气体与蚀刻物之间的比例在所提供的气体混合物中的气体和从等离子体离子注入衬底。在另一个实施方案中，该方法包括将基底提供到处理室中，将包含反应气体和含卤素的还原气体的气体混合物供应到室中，从气体混合物形成等离子体，逐渐增加蚀刻气体的比例气体混合物，并将离子从气体混合物中注入衬底中。

9. 发明授权

US08273624B2 Plasma immersed ion implantation process using balanced etch-deposition process 有权
标题翻译：使用平衡蚀刻沉积工艺的等离子体浸入式离子注入工艺
公开(公告)号：US08273624B2
公开(公告)日：2012-09-25
申请号：US12941526
申请日：2010-11-08
申请人： Peter Porshnev , Majeed A. Foad
发明人： Peter Porshnev , Majeed A. Foad
IPC分类号： H01L21/8242
CPC分类号： H01L21/2236 , H01L29/66575
摘要： Methods for implanting ions into a substrate by a plasma immersion ion implanting process are provided. In one embodiment, a method for implanting ions into a substrate includes providing a substrate into a processing chamber, generating a plasma from a gas mixture including a reacting gas and a etching gas in the chamber, adjusting the ratio between the reacting gas and the etching gas in the supplied gas mixture and implanting ions from the plasma into the substrate. In another embodiment, the method includes providing a substrate into a processing chamber, supplying a gas mixture including reacting gas and a halogen containing reducing gas into the chamber, forming a plasma from the gas mixture, gradually increasing the ratio of the etching gas in the gas mixture, and implanting ions from the gas mixture into the substrate.
摘要翻译：提供了通过等离子体浸没离子注入工艺将离子注入衬底的方法。在一个实施例中，用于将离子注入到衬底中的方法包括将衬底提供到处理室中，从腔室中的包括反应气体和蚀刻气体的气体混合物产生等离子体，调节反应气体与蚀刻物之间的比例在所提供的气体混合物中的气体和从等离子体离子注入衬底。在另一个实施方案中，该方法包括将基底提供到处理室中，将包含反应气体和含卤素的还原气体的气体混合物供应到室中，从气体混合物形成等离子体，逐渐增加蚀刻气体的比例气体混合物，并将离子从气体混合物中注入衬底中。

10. 发明申请

US20110281440A1 METHODS FOR NITRIDATION AND OXIDATION 审中-公开
标题翻译：硝化和氧化方法
公开(公告)号：US20110281440A1
公开(公告)日：2011-11-17
申请号：US13191167
申请日：2011-07-26
申请人： Peter Porshnev
发明人： Peter Porshnev
IPC分类号： H01L21/263 , H01L21/3105
CPC分类号： H01L21/02332 , H01J37/32412 , H01L21/02323 , H01L21/02326 , H01L21/28202 , H01L21/28247 , H01L21/32105
摘要： Methods of nitridation and selective oxidation are provided herein. In some embodiments, a method of selectively forming an oxide layer on a semiconductor structure disposed on a substrate support in a process chamber is provided, wherein the semiconductor structure comprising a substrate, one or more metal-containing layers, and one or more non metal-containing layers. The method may include forming a first remote plasma from a first process gas comprising oxygen; and exposing the semiconductor structure to a reactive species formed from the first remote plasma to selectively form an oxide layer on the one or more non metal-containing layers, wherein a density of the reactive species is about 109 to about 1017 molecules/cm3 and wherein a pressure in the chamber during exposure of the first layer is about 5 mTorr to about 3 Torr.
摘要翻译：本文提供了氮化和选择性氧化的方法。在一些实施例中，提供了一种在处理室中设置在衬底支架上的半导体结构上选择性地形成氧化物层的方法，其中半导体结构包括衬底，一个或多个含金属层和一个或多个非金属包含层。该方法可以包括从包含氧的第一工艺气体形成第一远程等离子体; 以及将所述半导体结构暴露于由所述第一远程等离子体形成的反应物质以在所述一个或多个非金属层上选择性地形成氧化物层，其中所述反应性物质的密度为约109至约1017分子/ cm 3，并且其中第一层暴露期间室内的压力约为5mTorr至约3Torr。

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