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    • 3. 发明授权
    • Non-volatile memory with source-side column select
    • 源极列选择非易失性存储器
    • US07522453B1
    • 2009-04-21
    • US11961134
    • 2007-12-20
    • Zhigang WangGregory BakkerVolker HechtSantosh YachareniFethi DhaouiVidyadhara Bellippady
    • Zhigang WangGregory BakkerVolker HechtSantosh YachareniFethi DhaouiVidyadhara Bellippady
    • G11C16/04
    • G11C16/0416G11C16/08
    • A non-volatile memory array segment includes an odd-select transistor having a drain coupled to an odd-source line and an even-select transistor having a drain coupled to an even-source line. Two segment-select transistors have drains coupled to the sources of different ones of the odd and even source lines, sources coupled to ground, and gates coupled to a segment-select line. A plurality of odd non-volatile memory transistors each has a drain coupled to a common drain line, a source coupled to the odd-source line, a floating gate, and a control gate. A plurality of even non-volatile memory transistors, each has a drain coupled to the common drain line, a source coupled to the even-source line, a floating gate, and a control gate. The control gate of each even non-volatile memory transistor is coupled to the control gate of a different one of the odd non-volatile memory transistors.
    • 非易失性存储器阵列段包括具有耦合到奇数源极线的漏极和耦合到偶数源极线的漏极的偶数选择晶体管的奇数选择晶体管。 两个段选择晶体管具有耦合到奇数和偶数源极线的不同源极,耦合到地的源极和耦合到段选择线的栅极的漏极。 多个奇数非易失性存储晶体管各自具有耦合到公共漏极线的漏极,耦合到奇数源极线的源极,浮动栅极和控制栅极。 多个偶数非易失性存储晶体管每个都具有耦合到公共漏极线的漏极,耦合到偶数源极线的源极,浮动栅极和控制栅极。 每个偶数非易失性存储晶体管的控制栅极耦合到奇数非易失性存储晶体管中不同一个的控制栅极。