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    • 10. 发明授权
    • Enhanced virtual anode
    • 增强虚拟阳极
    • US07850828B2
    • 2010-12-14
    • US11532371
    • 2006-09-15
    • John German
    • John German
    • C23C14/35
    • H01J37/3438H01J37/3244H01J37/34H01J37/3405
    • The apparatus and method involve using a gas manifold for introducing gas into a deposition chamber. Certain embodiments involve using a binary manifold for uniform distribution of the gas with good response time. During sputtering operations, provision of an anode using the gas manifold enables such anode to be entirely protected from sputtered dielectric material during the deposition process. As such, conduction paths are initially established and maintained between electrons within the chamber and the anode. This results in improved maintenance of stable plasma and consistent coating in the deposition chamber. The conduction paths are enhanced in comparison to conventional systems due to increased collisions between the electrons and gas flowing out of the manifold outlets. Also, ionization of the gas flowing from the manifold outlets is enhanced, resulting in enhanced deposition output from the system. A magnet can also be located within the manifold so as to further increase collisions between the electrons and gas flowing out of the manifold outputs.
    • 该装置和方法包括使用气体歧管将气体引入沉积室。 某些实施例涉及使用二元歧管来均匀分布气体,具有良好的响应时间。 在溅射操作期间,使用气体歧管提供阳极使得在沉积过程中能够使阳极完全被保护而不被溅射介电材料保护。 因此,传导路径最初建立并保持在室内的电子和阳极之间。 这样可以改善沉积室中稳定的等离子体和一致涂层的维护。 与常规系统相比,由于电流和流出歧管出口的气体之间的碰撞增加,传导路径得到增强。 此外,从歧管出口流出的气体的电离增强,导致来自系统的增强的沉积输出。 磁体也可以位于歧管内,以便进一步增加从歧管输出流出的电子和气体之间的碰撞。