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1. 发明申请

US20080092817A1 Cvd Reactor with Rf-Heated Process Chamber 有权
标题翻译：具有Rf加热处理室的Cvd反应器
公开(公告)号：US20080092817A1
公开(公告)日：2008-04-24
申请号：US11722686
申请日：2005-12-12
申请人： Johannes Kappeler , Frank Wischmeyer
发明人： Johannes Kappeler , Frank Wischmeyer
IPC分类号： C23C16/513
CPC分类号： C23C16/46 , C30B25/10
摘要： The invention concerns a deposition device in particular of crystalline coatings on at least one substrate in particular crystalline. Said device comprises a treatment chamber (5) consisting of a number of wall elements (1, 2, 3, 4), said wall elements (1, 2, 3, 4) being electroconductive and placed end-to-end, thus forming contacts (2′, 2″, 3′, 3″); a reactor housing (6) enclosing the wall elements (1, 2, 3, 4) of the treatment chamber and made of a non-electroconductive material and a RF-heated coil surrounding the wall elements (1, 2, 3, 4) of the treatment chamber. The invention is characterized in that a massive single-piece shield heating pipe (8) is implanted between the reactor housing (6) and the walls (1, 2, 3, 4) of the treatment chamber. The material of said pipe is electroconductive so that it is heated by the eddy currents induced therein by the RF field generated by the RF coil and so that it absorbs considerably the RF field and heats the walls (1, 2, 3, 4) of the treatment chamber.
摘要翻译：本发明涉及沉积装置，特别是在至少一个基底上的结晶涂层，特别是晶体。所述装置包括由许多壁元件（1,2,3,4）组成的处理室（5），所述壁元件（1,2,3,4）导电并且端对端放置，从而形成触点（2'，2“，3'，3”）; 封闭处理室的壁元件（1,2,3,4）并由非导电材料制成的反应器壳体（6），以及围绕所述壁元件（1,2,3,4）的RF加热线圈，的治疗室。本发明的特征在于，在反应器壳体（6）和处理室的壁（1,2,3,4）之间植入大块单件式屏蔽加热管（8）。所述管道的材料是导电的，使得其被由RF线圈产生的RF场引起的涡流加热，并且使得其大大地吸收RF场并且加热壁（1,2,3,4）的壁治疗室。

2. 发明授权

US08062426B2 CVD reactor with RF-heated process chamber 有权
标题翻译：具有RF加热处理室的CVD反应器
公开(公告)号：US08062426B2
公开(公告)日：2011-11-22
申请号：US11722686
申请日：2005-12-12
申请人： Johannes Käppeler , Frank Wischmeyer
发明人： Johannes Käppeler , Frank Wischmeyer
IPC分类号： C23C16/00
CPC分类号： C23C16/46 , C30B25/10
摘要： The invention concerns a deposition device in particular of crystalline coatings on at least one substrate in particular crystalline. Said device comprises a treatment chamber (5) consisting of a number of wall elements (1, 2, 3, 4), said wall elements (1, 2, 3, 4) being electroconductive and placed end-to-end, thus forming contacts (2′, 2″, 3′, 3″); a reactor housing (6) enclosing the wall elements (1, 2, 3, 4) of the treatment chamber and made of a non-electroconductive material and a RF-heated coil surrounding the wall elements (1, 2, 3, 4) of the treatment chamber. The invention is characterized in that a massive single-piece shield heating pipe (8) is implanted between the reactor housing (6) and the walls (1, 2, 3, 4) of the treatment chamber. The material of said pipe is electroconductive so that it is heated by the eddy currents induced therein by the RF field generated by the RF coil and so that it absorbs considerably the RF field and heats the walls (1, 2, 3, 4) of the treatment chamber.
摘要翻译：本发明涉及沉积装置，特别是在至少一个基底上的结晶涂层，特别是晶体。所述装置包括由许多壁元件（1,2,3,4）组成的处理室（5），所述壁元件（1,2,3,4）导电并且端对端放置，从而形成触点（2'，2“，3'，3”）; 封闭处理室的壁元件（1,2,3,4）并由非导电材料制成的反应器壳体（6），以及围绕所述壁元件（1,2,3,4）的RF加热线圈，的治疗室。本发明的特征在于，在反应器壳体（6）和处理室的壁（1,2,3,4）之间植入大块单件式屏蔽加热管（8）。所述管道的材料是导电的，使得其被由RF线圈产生的RF场引起的涡流加热，并且使得其大大地吸收RF场并且加热壁（1,2,3,4）的壁治疗室。

3. 发明授权

US07048802B2 CVD reactor with graphite-foam insulated, tubular susceptor 失效
标题翻译：具有石墨泡沫绝缘的CVD反应器，管状基座
公开(公告)号：US07048802B2
公开(公告)日：2006-05-23
申请号：US10431080
申请日：2003-05-07
申请人： Johannes Kaeppeler , Frank Wischmeyer , Rune Berge
发明人： Johannes Kaeppeler , Frank Wischmeyer , Rune Berge
IPC分类号： H01L21/00 , C23C16/00
CPC分类号： C23C16/46 , C23C16/44 , C30B25/08 , C30B25/10 , Y10T117/10
摘要： The invention relates to a device for depositing especially crystalline layers on especially crystalline substrates by means of reaction gases fed to a heated process chamber. Said process chamber is formed by the cavity of an especially multi-part graphite tube arranged in a reactor housing that especially comprises quartz walls. Said reactor housing, in the area of the process chamber, is enclosed by a high-frequency coil and the space between the reactor housing wall and the graphite tube is filled with a graphite foam sleeve. In order to improve heat insulation, the graphite foam sleeve is fully slit. The slot is wider than the maximum thermal elongation of the graphite foam sleeve in the peripheral direction to be expected when the device is heated up to process temperature.
摘要翻译：本发明涉及一种用于通过进料到加热处理室的反应气体将特别结晶层沉积在特别是晶体基底上的装置。所述处理室由布置在反应器壳体中的特别多部分石墨管的空腔形成，特别是包括石英壁。所述反应器壳体在处理室的区域中被高频线圈包围，反应器壳体壁和石墨管之间的空间填充有石墨泡沫套筒。为了改善绝热性，石墨泡沫套筒完全切开。当器件被加热到加工温度时，槽的周长方向比石墨泡沫套管的最大热伸长宽度要宽。

4. 发明授权

US06811614B2 CVD reactor with substrate holder which is rotatably driven and mounted by a gas stream 失效
公开(公告)号：US06811614B2
公开(公告)日：2004-11-02
申请号：US10431986
申请日：2003-05-08
申请人： Johannes Käppeler , Frank Wischmeyer , Rune Berge
发明人： Johannes Käppeler , Frank Wischmeyer , Rune Berge
IPC分类号： H01L2100
CPC分类号： C30B25/12 , C23C16/4584 , Y10S117/901
摘要： The invention relates to a device for depositing layers, particularly crystalline layers, onto substrates. Said device comprises a process chamber arranged in a reactor housing where the floor thereof, comprises at least one substrate holder which is rotatably driven by a gas flow flowing in a feed pipe associated with said floor. Said substrate holder is disposed in a bearing cavity on a gas cushion and held in place thereby. The aim of the invention is to technologically improve the design of a substrate holder which is rotatably mounted in a gas flow, particularly in a linear cross-flowing process chamber. Said bearing cavity is associated with a tray-shaped element arranged below the outflow of the feed pipe.

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