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    • 3. 发明授权
    • Boot-strap regulator for gate driver
    • 门驱动器的引导调节器
    • US08803360B2
    • 2014-08-12
    • US13076333
    • 2011-03-30
    • Pavel KonecnyJinwen Xiao
    • Pavel KonecnyJinwen Xiao
    • H02J1/10
    • H03F3/217Y10T307/50
    • Techniques are disclosed relating to supplying a power supply voltage to a gate driver. In one embodiment, an apparatus is disclosed that includes a first transistor configured to raise a voltage at a node and a second transistor configured to lower the voltage at the node. The apparatus further includes a first driver configured to receive a first power supply voltage, and to use the first power supply voltage to control a gate voltage of the first transistor. The apparatus further includes a second driver configured to receive a second power supply voltage, and to use the second power supply voltage to control a gate voltage of the second transistor. In such an embodiment, the apparatus includes a first regulator coupled to the first driver and configured to generate the first power supply voltage based on the second power supply voltage.
    • 公开了关于向栅极驱动器提供电源电压的技术。 在一个实施例中,公开了一种装置,其包括被配置为升高节点处的电压的第一晶体管和被配置为降低节点处的电压的第二晶体管。 该装置还包括被配置为接收第一电源电压的第一驱动器,以及使用第一电源电压来控制第一晶体管的栅极电压。 该装置还包括被配置为接收第二电源电压的第二驱动器,并且使用第二电源电压来控制第二晶体管的栅极电压。 在这种实施例中,该装置包括耦合到第一驱动器并被配置为基于第二电源电压产生第一电源电压的第一调节器。
    • 4. 发明授权
    • Amplifier using master-slave control scheme
    • 放大器采用主从控制方案
    • US08508298B2
    • 2013-08-13
    • US13045279
    • 2011-03-10
    • Pavel KonecnyJinwen Xiao
    • Pavel KonecnyJinwen Xiao
    • H03F3/217
    • H03F3/2173
    • Techniques are disclosed relating to charging and discharging gates of transistors. In one embodiment, an apparatus includes first and second drivers. The first driver is configured to discharge a gate of a first transistor, and to send a charge indication to the second driver in response to reaching a Miller plateau for the first transistor. The second driver is configured to charge a gate of a second transistor above a threshold voltage in response to receiving the charge indication. In some embodiments, the second driver is configured to begin charging the gate of the second transistor to a voltage below the threshold voltage when the first driver begins discharging the gate of the first transistor begins, and to wait to charge the gate of the second transistor above the threshold voltage until the charge indication has been received.
    • 公开了关于晶体管的充电和放电门的技术。 在一个实施例中,装置包括第一和第二驱动器。 第一驱动器被配置为对第一晶体管的栅极进行放电,并响应于达到第一晶体管的米勒平台,向第二驱动器发送电荷指示。 第二驱动器被配置为响应于接收到充电指示而将第二晶体管的栅极充电到高于阈值电压。 在一些实施例中,第二驱动器被配置为当第一驱动器开始放电第一晶体管的栅极开始时开始将第二晶体管的栅极充电到低于阈值电压的电压,并等待对第二晶体管的栅极充电 高于阈值电压,直到收到充电指示为止。
    • 5. 发明申请
    • BOOT-STRAP REGULATOR FOR GATE DRIVER
    • 门控驱动器的引导调节器
    • US20120249099A1
    • 2012-10-04
    • US13076333
    • 2011-03-30
    • Pavel KonecnyJinwen Xiao
    • Pavel KonecnyJinwen Xiao
    • G05F1/10
    • H03F3/217Y10T307/50
    • Techniques are disclosed relating to supplying a power supply voltage to a gate driver. In one embodiment, an apparatus is disclosed that includes a first transistor configured to raise a voltage at a node and a second transistor configured to lower the voltage at the node. The apparatus further includes a first driver configured to receive a first power supply voltage, and to use the first power supply voltage to control a gate voltage of the first transistor. The apparatus further includes a second driver configured to receive a second power supply voltage, and to use the second power supply voltage to control a gate voltage of the second transistor. In such an embodiment, the apparatus includes a first regulator coupled to the first driver and configured to generate the first power supply voltage based on the second power supply voltage.
    • 公开了关于向栅极驱动器提供电源电压的技术。 在一个实施例中,公开了一种装置,其包括被配置为升高节点处的电压的第一晶体管和被配置为降低节点处的电压的第二晶体管。 该装置还包括被配置为接收第一电源电压的第一驱动器,以及使用第一电源电压来控制第一晶体管的栅极电压。 该装置还包括被配置为接收第二电源电压的第二驱动器,并且使用第二电源电压来控制第二晶体管的栅极电压。 在这种实施例中,该装置包括耦合到第一驱动器并被配置为基于第二电源电压产生第一电源电压的第一调节器。
    • 6. 发明申请
    • AMPLIFIER USING FAST DISCHARGING REFERENCE
    • 放大器使用快速放大参考
    • US20120229211A1
    • 2012-09-13
    • US13045233
    • 2011-03-10
    • Pavel KonecnyJinwen XiaoJohn M. Khoury
    • Pavel KonecnyJinwen XiaoJohn M. Khoury
    • H03F3/217H03K3/00
    • H03K7/08H03F3/2173H03K17/166H03K2217/0027H03K2217/0045
    • Techniques are disclosed relating to charging and discharging a gate of transistor. In one embodiment, an apparatus is disclosed that includes a driver configured to discharge a gate of a transistor. The driver is configured to discharge the gate at a first rate until reaching a Miller plateau for the transistor, and to discharge the gate at a second rate after reaching the Miller plateau. In such an embodiment, the first rate is greater than the second rate. In some embodiments, the driver is also configured to charge the gate of the transistor at a third rate until reaching a Miller plateau for the transistor, and to charge the gate at a fourth rate after reaching the Miller plateau, the third rate being greater than the fourth rate. In some embodiments, the apparatus is a class D amplifier.
    • 公开了关于对晶体管的栅极进行充电和放电的技术。 在一个实施例中,公开了一种装置,其包括被配置为对晶体管的栅极进行放电的驱动器。 驱动器被配置为以第一速率排放门,直到达到晶体管的Miller平台,并且在达到Miller平台之后以第二速率排出门。 在这种实施例中,第一速率大于第二速率。 在一些实施例中,驱动器还被配置为以三速对晶体管的栅极充电,直到达到晶体管的Miller平台为止,并且在达到Miller平台之后以第四速率对栅极充电,第三速率大于 第四率。 在一些实施例中,该装置是D类放大器。
    • 7. 发明申请
    • AMPLIFIER USING MASTER-SLAVE CONTROL SCHEME
    • 使用主从控制方案的放大器
    • US20120229212A1
    • 2012-09-13
    • US13045279
    • 2011-03-10
    • Pavel KonecnyJinwen Xiao
    • Pavel KonecnyJinwen Xiao
    • H03F3/217H03B5/02
    • H03F3/2173
    • Techniques are disclosed relating to charging and discharging gates of transistors. In one embodiment, an apparatus includes first and second drivers. The first driver is configured to discharge a gate of a first transistor, and to send a charge indication to the second driver in response to reaching a Miller plateau for the first transistor. The second driver is configured to charge a gate of a second transistor above a threshold voltage in response to receiving the charge indication. In some embodiments, the second driver is configured to begin charging the gate of the second transistor to a voltage below the threshold voltage when the first driver begins discharging the gate of the first transistor begins, and to wait to charge the gate of the second transistor above the threshold voltage until the charge indication has been received.
    • 公开了关于晶体管的充电和放电门的技术。 在一个实施例中,装置包括第一和第二驱动器。 第一驱动器被配置为对第一晶体管的栅极进行放电,并响应于达到第一晶体管的米勒平台,向第二驱动器发送电荷指示。 第二驱动器被配置为响应于接收到充电指示而将第二晶体管的栅极充电到高于阈值电压。 在一些实施例中,第二驱动器被配置为当第一驱动器开始放电第一晶体管的栅极开始时开始将第二晶体管的栅极充电到低于阈值电压的电压,并等待对第二晶体管的栅极充电 高于阈值电压,直到收到充电指示为止。
    • 8. 发明授权
    • Amplifier using fast discharging reference
    • 放大器采用快速放电参考
    • US08493146B2
    • 2013-07-23
    • US13045233
    • 2011-03-10
    • Pavel KonecnyJinwen XiaoJohn M. Khoury
    • Pavel KonecnyJinwen XiaoJohn M. Khoury
    • H03F3/217
    • H03K7/08H03F3/2173H03K17/166H03K2217/0027H03K2217/0045
    • Techniques are disclosed relating to charging and discharging a gate of transistor. In one embodiment, an apparatus is disclosed that includes a driver configured to discharge a gate of a transistor. The driver is configured to discharge the gate at a first rate until reaching a Miller plateau for the transistor, and to discharge the gate at a second rate after reaching the Miller plateau. In such an embodiment, the first rate is greater than the second rate. In some embodiments, the driver is also configured to charge the gate of the transistor at a third rate until reaching a Miller plateau for the transistor, and to charge the gate at a fourth rate after reaching the Miller plateau, the third rate being greater than the fourth rate. In some embodiments, the apparatus is a class D amplifier.
    • 公开了关于对晶体管的栅极进行充电和放电的技术。 在一个实施例中,公开了一种装置,其包括被配置为对晶体管的栅极进行放电的驱动器。 驱动器被配置为以第一速率排放门,直到达到晶体管的Miller平台,并且在达到Miller平台之后以第二速率排出门。 在这种实施例中,第一速率大于第二速率。 在一些实施例中,驱动器还被配置为以三速对晶体管的栅极充电,直到达到晶体管的Miller平台为止,并且在达到Miller平台之后以第四速率对栅极充电,第三速率大于 第四率。 在一些实施例中,该装置是D类放大器。
    • 9. 发明申请
    • Relaxation Oscillator
    • 放松振荡器
    • US20140176250A1
    • 2014-06-26
    • US13721885
    • 2012-12-20
    • Axel ThomsenPavel KonecnyXiaodong Wang
    • Axel ThomsenPavel KonecnyXiaodong Wang
    • H03K3/011
    • H03K3/0231
    • In an embodiment, a method includes: during a first portion of a cycle of a clock signal generated by an oscillator, pre-charging a first capacitor of a first switched capacitor stage until a first comparator determines that a first node voltage of the first switched capacitor stage is greater than a first reference voltage at a first reference voltage node; applying a second reference voltage to the first reference voltage node; and responsive to a first edge of the clock signal, charging the first capacitor until the first comparator determines that the first node voltage is greater than the second reference voltage at the first reference voltage node.
    • 在一个实施例中,一种方法包括:在由振荡器产生的时钟信号的周期的第一部分期间,对第一开关电容器级的第一电容器进行预充电,直到第一比较器确定第一开关的第一节点电压 电容器级大于第一参考电压节点处的第一参考电压; 将第二参考电压施加到所述第一参考电压节点; 并且响应于所述时钟信号的第一边沿,对所述第一电容器充电直到所述第一比较器确定所述第一节点电压大于所述第一参考电压节点处的所述第二参考电压。
    • 10. 发明授权
    • Relaxation oscillator
    • 放松振荡器
    • US09099994B2
    • 2015-08-04
    • US13721885
    • 2012-12-20
    • Axel ThomsenPavel KonecnyXiaodong Wang
    • Axel ThomsenPavel KonecnyXiaodong Wang
    • H03K3/011H03K3/0231
    • H03K3/0231
    • In an embodiment, a method includes: during a first portion of a cycle of a clock signal generated by an oscillator, pre-charging a first capacitor of a first switched capacitor stage until a first comparator determines that a first node voltage of the first switched capacitor stage is greater than a first reference voltage at a first reference voltage node; applying a second reference voltage to the first reference voltage node; and responsive to a first edge of the clock signal, charging the first capacitor until the first comparator determines that the first node voltage is greater than the second reference voltage at the first reference voltage node.
    • 在一个实施例中,一种方法包括:在由振荡器产生的时钟信号的周期的第一部分期间,对第一开关电容器级的第一电容器进行预充电,直到第一比较器确定第一开关的第一节点电压 电容器级大于第一参考电压节点处的第一参考电压; 将第二参考电压施加到所述第一参考电压节点; 并且响应于所述时钟信号的第一边缘,对所述第一电容器充电直到所述第一比较器确定所述第一节点电压大于所述第一参考电压节点处的所述第二参考电压。