专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US4523971A Programmable ion beam patterning system 失效
标题翻译：可编程离子束图案化系统
公开(公告)号：US4523971A
公开(公告)日：1985-06-18
申请号：US626097
申请日：1984-06-28
申请人： Jerome J. Cuomo , James M. E. Harper , Harold R. Kaufman , James L. Speidell
发明人： Jerome J. Cuomo , James M. E. Harper , Harold R. Kaufman , James L. Speidell
IPC分类号： H01J37/08 , B23K15/00 , C23C14/46 , H01J37/09 , H01J37/30 , H01J37/305 , H01J37/317 , H01L21/265 , B44C1/22 , C03C15/00 , C03C25/06
CPC分类号： C23C14/46 , H01J37/09 , H01J37/3053 , H01J37/3178
摘要： This ion beam system provides an ion beam pattern which is produced without the need for a mask. A programmable grid is used in combination with an ion beam source, where the apertures of the programmable grid can have electrical potentials associated therewith which either extract ions or impede the movement of ions through the apertures. Depending upon the electrical biasing provided to each of the apertures of the grid, different patterns of ions can be extracted through the grid. By changing the electrical bias at different locations on the programmable grid, these different patterns are produced. The patterns can be used for many applications, including patterned deposition, patterned etching, and patterned treatment of surfaces.
摘要翻译：该离子束系统提供在不需要掩模的情况下产生的离子束图案。可编程栅格与离子束源组合使用，其中可编程栅格的孔可以具有与其相关联的电势，其提取离子或阻止离子通过孔的移动。取决于提供给栅格的每个孔的电偏压，可以通过栅格提取不同的离子图案。通过改变可编程网格上不同位置的电气偏压，产生这些不同的图案。这些图案可以用于许多应用，包括图案化沉积，图案化蚀刻和表面图案化处理。

2. 发明授权

US4446403A Compact plug connectable ion source 失效
标题翻译：紧凑型插头可连接离子源
公开(公告)号：US4446403A
公开(公告)日：1984-05-01
申请号：US382266
申请日：1982-05-26
申请人： Jerome J. Cuomo , James M. E. Harper , Harold R. Kaufman
发明人： Jerome J. Cuomo , James M. E. Harper , Harold R. Kaufman
IPC分类号： H01J37/22 , C23C14/46 , C23F1/00 , C23F4/00 , H01J27/02 , H01J27/08 , H01J27/14 , H01J37/08 , H01L21/265 , H01J7/24
CPC分类号： H01J27/022 , H01J27/14 , H01J37/08
摘要： A compact ion source plug connected to a socket is provided. The source uses a magnetic pole piece which includes a center pole piece and a surrounding circumferential pole piece to form an arcuate fringe field. Cathode elements and anode elements are located within the fringe field for producing a plasma. A source body terminates at one end with at least one grid and forms a plasma chamber with a base member. All of the electrical connections to the plasma generator and the gas connection are through a plug formed on the opposite side of the base member.
摘要翻译：提供连接到插座的紧凑型离子源插头。源使用包括中心极片和周围圆周极片的磁极片，以形成弧形条纹场。阴极元件和阳极元件位于边缘场内用于产生等离子体。源体在一端终止于至少一个栅格，并形成具有基底构件的等离子体室。与等离子体发生器和气体连接的所有电连接通过形成在基体的相对侧上的塞子。

3. 发明授权

US4588490A Hollow cathode enhanced magnetron sputter device 失效
标题翻译：空心阴极增强磁控溅射装置
公开(公告)号：US4588490A
公开(公告)日：1986-05-13
申请号：US736918
申请日：1985-05-22
申请人： Jerome J. Cuomo , Harold R. Kaufman , Stephen M. Rossnagel
发明人： Jerome J. Cuomo , Harold R. Kaufman , Stephen M. Rossnagel
IPC分类号： C23F4/00 , C23C14/35 , H01J37/34
CPC分类号： H01J37/3405
摘要： A plasma sputter etching/deposition system comprising an electron-emitting hollow cathode arc-source combined with a conventional plasma sputter etching/deposition system such as a magnetron. The electrons emitted are coupled into the intrinsic high energy, e.g., magnetic field and are accelerated by the plasma potential and cause a significant increase plasma density. The resultant combination allows much greater sputtering/deposition efficiency than was possible with previous devices. According to a further aspect of the invention, switched operation is possible, whereby etching may vary from isotropic to anisotropic. A side discharge hollow cathode structure is also described for enhancing certain sputtering/deposition processes, wherein electrons may be emitted from one or more openings at the side of a hollow cathode chamber to achieve more uniform electron emission in a large process chamber.
摘要翻译：等离子体溅射蚀刻/沉积系统，其包括与常规等离子体溅射蚀刻/沉积系统如磁控管组合的电子发射空心阴极电弧源。所发射的电子被耦合到固有的高能量例如磁场中，并被等离子体电势加速并且引起显着增加的等离子体密度。所得到的组合允许比以前的装置更大的溅射/沉积效率。根据本发明的另一方面，切换操作是可能的，由此蚀刻可以从各向同性到各向异性。还描述了用于增强某些溅射/沉积工艺的侧面放电中空阴极结构，其中电子可以从中空阴极室侧面的一个或多个开口发射，以在大的处理室中实现更均匀的电子发射。

4. 发明授权

US4351712A Low energy ion beam oxidation process 失效
标题翻译：低能离子束氧化过程
公开(公告)号：US4351712A
公开(公告)日：1982-09-28
申请号：US214929
申请日：1980-12-10
申请人： Jerome J. Cuomo , James M. E. Harper
发明人： Jerome J. Cuomo , James M. E. Harper
IPC分类号： C23F4/00 , C23C14/48 , H01L21/302 , H01L21/3065 , H01L21/31 , H01L21/316 , H01L39/24 , H01L49/00 , C23C15/00 , H01L39/22
CPC分类号： H01L21/31683 , H01L39/2493 , H01L45/00 , Y10S505/817 , Y10T29/49014
摘要： A surface reaction process for controlled oxide growth is disclosed using a directed, low energy ion beam for compound or oxide formation. The technique is evaluated by fabricating Ni-oxide-Ni and Cr-oxide-Ni tunneling junctions, using directed oxygen ion beams with energies ranging from about 30 to 180 eV. In one embodiment, high ion current densities are achieved at these low energies by replacing the conventional dual grid extraction system of the ion source with a single fine mesh grid. Junction resistance decreases with increasing ion energy, and oxidation time dependence shows a characteristic saturation, both consistent with a process of simultaneous oxidation and sputter etching, as in the conventional r.f. oxidation process. In contrast with r.f. oxidized junctions, however, ion beam oxidized junctions contain less contamination by backsputtering, and the quantitative nature of ion beam techniques allows greater control over the growth process.
摘要翻译：公开了一种用于受控氧化物生长的表面反应方法，该方法使用用于化合物或氧化物形成的定向低能量离子束。通过使用约30至180eV的能量的定向氧离子束，通过制备Ni氧化物-Ni和Cr-氧化物-NN隧穿结来评估该技术。在一个实施例中，通过用单个细网格网代替离子源的常规双栅格提取系统，在这些低能量下实现高离子电流密度。结电阻随着离子能量的增加而降低，而氧化时间依赖性显示出特征饱和度，这与常规的r.f.中同时氧化和溅射蚀刻的过程一致。氧化过程。与r.f.相反。氧化结，然而，离子束氧化连接通过反溅射含有较少的污染，并且离子束技术的定量性质允许更好地控制生长过程。

5. 发明授权

US4264813A High intensity ion source using ionic conductors 失效
标题翻译：使用离子导体的高强度离子源
公开(公告)号：US4264813A
公开(公告)日：1981-04-28
申请号：US53590
申请日：1979-06-29
申请人： G. V. Chandrashekhar , Praveen Chaudhari , Jerome J. Cuomo , Richard J. Gambino , James M. E. Harper
发明人： G. V. Chandrashekhar , Praveen Chaudhari , Jerome J. Cuomo , Richard J. Gambino , James M. E. Harper
IPC分类号： B23K15/00 , H01J3/04 , H01J27/02 , H01J27/20 , H01J37/08 , H01L21/265 , H01L27/00 , B01D59/44 , H01J27/00
CPC分类号： H01L27/00 , H01J27/20 , H01J37/08
摘要： The present invention describes an ion source which is capable of producing relatively high density ion currents. The ion source employs an electrically biased ionic conductor to supply ions from a reservoir of the atomic species.
摘要翻译：本发明描述了能够产生较高密度离子电流的离子源。离子源采用电偏置离子导体来从原子物质的储层供应离子。

6. 发明授权

US4132614A Etching by sputtering from an intermetallic target to form negative metallic ions which produce etching of a juxtaposed substrate 失效
标题翻译：通过溅射从金属间化合物靶上蚀刻形成负金属离子，产生并列衬底的蚀刻
公开(公告)号：US4132614A
公开(公告)日：1979-01-02
申请号：US844541
申请日：1977-10-26
申请人： Jerome J. Cuomo , Richard J. Gambino , James M. E. Harper
发明人： Jerome J. Cuomo , Richard J. Gambino , James M. E. Harper
IPC分类号： C23F4/00 , H01J37/34 , H01L21/302 , H01L21/3065 , C23C15/00
CPC分类号： H01J37/3426 , H01J37/34
摘要： Bombardment some intermetallic compounds above a sufficient target voltage V.sub.o can be used for etching substrates. Etching a substrate located in an evacuated chamber involves bombardment of an intermetallic compound or alloy comprising for example Au, Pt, etc. and a metallic element such as Eu, La, Cs, etc. with ions so that a large flux of negative Au, Pt, etc. ions is produced which etches a substrate located nearby. Such bombardment is achieved by placing an Au, Pt, etc. intermetallic composition target in a sputtering chamber using an argon sputtering gas, located opposite from a substrate. A gold alloy or compound target can be SmAu, EuAu, LaAu, CsAu, etc. The target of Au, Pt, etc. and a rare earth element, etc. is bombarded by sputtering gas atoms excited by RF or D.C. energy, creating negative metal ions by sputtering. Instead of depositing upon the substrate, the negative ions cause a cascade of energetic sputtering gas atoms and metal atoms to etch the substrate surface directly beneath the target as outlined by ground shields. Outside that region negative ion and rare earth metals deposit on the substrate. Bombardment with an ion gun, neutral atoms or energetic particle sources or an ionic molecular source may produce negative ions. A use is ion milling. A target material is useful as a negative ion source of metal B in an intermetallic compound of metals A and B if A has ionization potential I.sub.A and B has electron affinity EA.sub.B such that I.sub.A -EA.sub.B > about 3.4 electron volts or if there is a electronegativity difference .DELTA.X greater than about 2.55.
摘要翻译：超过足够目标电压Vo的一些金属间化合物可用于蚀刻基板。蚀刻位于真空室中的衬底包括用离子轰击包含例如Au，Pt等的金属间化合物或合金以及诸如Eu，La，Cs等的金属元素，使得大量的Au，产生Pt等离子，其蚀刻位于附近的衬底。通过使用与衬底相对的氩气溅射气体将Au，Pt等金属间化合物靶放置在溅射室中来实现这种轰击。金合金或复合靶可以是SmAu，EuAu，LaAu，CsAu等。通过由RF或DC能量激发的溅射气体原子轰击Au，Pt等稀土元素等的靶，产生负金属离子溅射。代替沉积在衬底上，负离子引起高能溅射气体原子和金属原子的级联来蚀刻目标正下方的衬底表面，如由接地屏蔽所概述的。在该区域外，负离子和稀土金属沉积在基底上。使用离子枪，中性原子或能量粒子源或离子分子源进行轰击可能产生负离子。使用离子铣削。如果A具有电离电位IA和B具有电子亲和力EAB使得IA-EAB>约3.4电子伏特或如果存在电负性，则目标材料可用作金属A和B的金属间化合物中金属B的负离子源差异DELTA X大于2.55。

7. 发明授权

US4714831A Spherical retarding grid analyzer 失效
标题翻译：球形延迟网格分析仪
公开(公告)号：US4714831A
公开(公告)日：1987-12-22
申请号：US859102
申请日：1986-05-01
申请人： Gregory J. Clark , Praveen Chaudhari , Jerome J. Cuomo , Margaret A. Frisch , James L. Speidell
发明人： Gregory J. Clark , Praveen Chaudhari , Jerome J. Cuomo , Margaret A. Frisch , James L. Speidell
IPC分类号： G21K1/087 , H01J37/04 , H01J37/05 , H01J49/48 , H01J40/04
CPC分类号： H01J37/04 , H01J49/488
摘要： A spherical grid for use in instrumentation comprising a rigid non-magnetic frame having a pattern of holes. Into each hole a flat wafer is placed, each wafer having etched therein holes defining the grid mesh. The frame maintains the geometric conformal shape allowing large units to be constructed.
摘要翻译：用于仪器的球形网格，包括具有孔图案的刚性非磁性框架。在每个孔中放置一个平坦的晶片，每个晶片在其中蚀刻有限定网格网格的孔。框架保持几何适形形状，允许构建大型单元。

8. 发明授权

US5225926A Durable optical elements fabricated from free standing polycrystalline diamond and non-hydrogenated amorphous diamond like carbon (DLC) thin films 失效
标题翻译：耐用的光学元件由免费立式多晶金刚石和非氢化非晶金刚石（DLC）薄膜制成
公开(公告)号：US5225926A
公开(公告)日：1993-07-06
申请号：US754861
申请日：1991-09-04
申请人： Jerome J. Cuomo , Charles R. Guarnieri , Bruce A. Hoenig , Hajime Seki , James L. Speidell , Stanley J. Whitehair
发明人： Jerome J. Cuomo , Charles R. Guarnieri , Bruce A. Hoenig , Hajime Seki , James L. Speidell , Stanley J. Whitehair
IPC分类号： C23C16/01 , G02B1/10
CPC分类号： G02B1/105 , C23C16/01 , Y10T428/30
摘要： Optical elements, and methods for fabricating them, are described wherein each element includes a free standing (self supporting) polycrystalline continuous thin film of diamond combined with a non-hydrogenated amorphous diamond like carbon (DLC) film having a high percentage of sp.sup.3 bonding. These elements may be designed to have optically smooth surfaces, have wide optical transmission ranges (for example, be transparent across the infrared portion of the spectrum), and exhibit exceptional durability characteristics. Optical instruments that include such elements are also described, along with the derivative benefits, such as improved operating performance and lower maintenance requirements, realized using the novel optical elements. In particular, a polarization Michaelson interferometer (PMI) is taught which is operative over the entire range from far infrared into the visible portion of the spectrum without requiring the exchange of beam splitters or beam polarizers. These performance benefits are achieved as a result of the transmission characteristics of the novel optical elements associated with the PMI.

9. 发明授权

US4538067A Single grid focussed ion beam source 失效
标题翻译：单网格聚焦离子束源
公开(公告)号：US4538067A
公开(公告)日：1985-08-27
申请号：US448122
申请日：1982-12-09
申请人： Jerome J. Cuomo , James M. E. Harper , Gary A. Waters
发明人： Jerome J. Cuomo , James M. E. Harper , Gary A. Waters
IPC分类号： C23F4/00 , C23C14/46 , H01J27/02 , H01J27/08 , H01J37/08 , H01J37/305 , H01J37/317 , H01L21/265 , H01L21/302 , H01J3/14
CPC分类号： H01J27/022 , C23C14/46 , H01J27/08 , H01J37/08 , H01J37/3053
摘要： A technique for providing an ion beam of variable focussing (concentration) is described using a flexible grid for extracting and accelerating ions from an ion plasma. The grid is electrically conducting and will bow depending on a voltage difference between it and the ion plasma. This bowing of the grid from its initial planar configuration provides focussing of the ion beam. The amount of focussing depends upon the amount the grid is bowed, which in turn depends upon the voltage difference between it and the ion plasma. The same ion source/flexible grid combination can be used for different operations as for example, providing a collimated, low energy ion beam over a large area and then for providing a focussed ion beam of high energy onto a small area.
摘要翻译：使用用于从离子等离子体提取和加速离子的柔性栅格来描述用于提供可变聚焦（浓度）的离子束的技术。电网是导电的，并且将根据其与离子等离子体之间的电压差而弯曲。从其初始平面配置的栅格弯曲可以提供离子束的聚焦。聚焦的量取决于栅格弯曲的量，其又取决于其与离子等离子体之间的电压差。相同的离子源/柔性网格组合可以用于不同的操作，例如，在大面积上提供准直的低能量离子束，然后将高能量的聚焦离子束提供到小区域上。

10. 发明授权

US4381453A System and method for deflecting and focusing a broad ion beam 失效
标题翻译：用于偏转和聚焦宽离子束的系统和方法
公开(公告)号：US4381453A
公开(公告)日：1983-04-26
申请号：US221661
申请日：1980-12-31
申请人： Jerome J. Cuomo , James M. E. Harper
发明人： Jerome J. Cuomo , James M. E. Harper
IPC分类号： H01J37/08 , C23C14/32 , H01J37/147 , H01J37/30 , H01J37/305 , H01J37/317 , H01L21/302
CPC分类号： H01J37/3053
摘要： A method and system for deflecting a broad ion plasma beam which includes an ion source for forming an ion plasma, an extraction means for extracting a broad ion plasma beam from the ion plasma, and deflection means including a non-grounded surface located in the path of the ion plasam beam and at an angle to the path for deflecting the ion plasma beam to a target material. A grounded, screen grid is located in front of the deflecting means in the path of the ion plasma. The screen grid has openings which permit passage of the ions in the ion plasma, but block passage of the electrons. The plasma beam is deflected by the deflection means and the grounded, screen grid onto the target material for sputter cleaning, deposition and ion milling applications.
摘要翻译：一种用于偏转宽离子等离子体束的方法和系统，其包括用于形成离子等离子体的离子源，用于从离子等离子体提取宽离子等离子体束的提取装置，以及包括位于路径中的非接地表面的偏转装置的离子等离子束并且与用于将离子等离子体束偏转到目标材料的路径成一定角度。接地的屏栅位于离子等离子体路径中的偏转装置的前面。筛栅具有允许离子在离子等离子体中通过但阻挡电子通过的开口。等离子体束被偏转装置和接地的筛网偏转到目标材料上用于溅射清洗，沉积和离子铣削应用。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式