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    • 3. 发明申请
    • METHODS, COMPOSITIONS AND DEVICES FOR PERFORMING IONIZATION DESORPTION ON SILICON DERIVATIVES
    • 用于对硅衍生物进行离子沉淀的方法,组合物和装置
    • US20080073512A1
    • 2008-03-27
    • US11829170
    • 2007-07-27
    • Gary SiuzdakEden GoZhouxin ShenBruce ComptonEdouard BouvierGrace Credo
    • Gary SiuzdakEden GoZhouxin ShenBruce ComptonEdouard BouvierGrace Credo
    • C01B33/113C07F7/02H01J49/16
    • B01L3/5085B01L2300/069B01L2300/0819B01L2300/12H01J49/0418
    • Embodiments of the present invention are directed to a substrate for performing ionization desorption on porous silicon, methods for performing such ionization desorption and methods of making substrates. One embodiment directed to a substrate for performing ionization desorption on silicon comprises a substrate having a surface having a formula of: As used above, X is H or Y, where at least at least twenty five mole percent of X is Y and Y is hydroxyl, or —O—R1, or O—SiR1, R2, R3 wherein R1, R2, and R3 are selected from the group consisting of alkyl, alkenyl, alkynyl, aromatic, amino alkyl, amino alkenyl, amino alkynyl, pyridinyl, pyrridonyl, and carbonyl, alcohol and carboxylic acid derivatives thereof having one to twenty five atoms, and hydroxyl, amino, amide, carboxyl, ester, carbonyl, sulfhydryl, sulfonyl, phosphoral, bromo, iodo, chloro and fluoro derivatives. The letter “n” represents an integer from 1 to infinity and any vacant valences are silicon atoms, hydrogen or impurities.
    • 本发明的实施例涉及用于在多孔硅上进行电离解吸的基板,用于进行这种电离解吸的方法和制造基板的方法。 涉及用于在硅上进行离子解吸的衬底的一个实施方案包括具有下式的表面的衬底:如上所用,X为H或Y,其中X至少为二十五摩尔百分数为Y,Y为羟基 或-OR 1,或O-SiR 1,R 2,R 3,其中R 1, R 1,R 2,R 3和R 3选自烷基,烯基,炔基,芳族,氨基烷基,氨基烯基,氨基炔基, 吡啶基,吡咯基和羰基,具有一至二十五个原子的醇和羧酸衍生物,以及羟基,氨基,酰胺,羧基,酯,羰基,巯基,磺酰基,磷酰基,溴,碘,氯和氟衍生物。 字母“n”表示从1到无穷大的整数,任何空位是硅原子,氢或杂质。
    • 6. 发明申请
    • Methods, compositions and devices for performing ionization desorption on silicon derivatives
    • 用于在硅衍生物上进行电离解吸的方法,组合物和装置
    • US20060157648A1
    • 2006-07-20
    • US11288590
    • 2005-11-29
    • Gary SiuzdakEden GoZhouxin ShenBruce ComptonEdouard BouvierGrace Credo
    • Gary SiuzdakEden GoZhouxin ShenBruce ComptonEdouard BouvierGrace Credo
    • H01J49/00
    • H01J49/0418B01L3/5085B01L3/5088B01L2300/069B01L2300/0819B01L2300/0829B01L2300/12G01N1/22
    • Embodiments of the present invention are directed to a substrate for performing ionization desorption on porous silicon, methods for performing such ionization desorption and methods of making substrates. One embodiment directed to a substrate for performing ionization desorption on silicon comprises a substrate having a surface having a formula of: As used above, X is H or Y, where at least at least twenty five mole percent of X is Y and Y is hydroxyl, or —O—R1 or O—SiR1,R2,R3 wherein R1,R2, and R3 are selected from the group consisting C1 to C6 straight, cyclic, or branched alkyl, aryl, or alkoxy group, a hydroxyl group, or a siloxane group, and R6 may be a C1 to C36 straight, cyclic, or branched alkyl (e.g., C18, cyanopropyl), aryl, or alkoxy group, where the groups of R6 are unsubstituted or substituted with one or more moieties such as halogen, cyano, amino, diol, nitro, ether, carbonyl, epoxide, sulfonyl, cation exchanger, anion exchanger, carbamate, amide, urea, peptide, protein, carbohydrate, and nucleic acid functionalities. The letter “n” represents an integer from 1 to infinity and any vacant valences are silicon atoms, hydrogen or impurities.
    • 本发明的实施例涉及用于在多孔硅上进行电离解吸的基板,用于进行这种电离解吸的方法和制造基板的方法。 涉及用于在硅上进行离子解吸的衬底的一个实施方案包括具有下式的表面的衬底:如上所用,X为H或Y,其中X至少为二十五摩尔百分数为Y,Y为羟基 或-OR 1或O-SiR 1,R 2,R 3,其中R 1 R 2,R 3和R 3选自C 1至C 6 - , - 直链,环状或支链烷基,芳基或烷氧基,羟基或硅氧烷基,R 6可以是C 1〜 36个直链,环状或支链烷基(例如C 18,氰基丙基),芳基或烷氧基,其中R 6基团是未取代的或 被一个或多个部分取代,例如卤素,氰基,氨基,二醇,硝基,醚,羰基,环氧化物,磺酰基,阳离子交换剂,阴离子交换剂,氨基甲酸酯,酰胺,脲,肽,蛋白质,碳水化合物和核酸功能。 字母“n”表示从1到无穷大的整数,任何空位是硅原子,氢或杂质。