专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07610636B2 In-vehicle lift mechanism 有权
标题翻译：车内升降机构
公开(公告)号：US07610636B2
公开(公告)日：2009-11-03
申请号：US11630932
申请日：2005-06-29
申请人： James K. Holmes , Douglas J. Yoder , Gary D. Peter
发明人： James K. Holmes , Douglas J. Yoder , Gary D. Peter
IPC分类号： A47C17/64 , B60J7/00
CPC分类号： B60P3/36 , B60P1/02
摘要： The invention provides a vertical lift mechanism (10) for a bunk bed within a recreational vehicle. The mechanism includes a lateral support assembly (14) that travels up and down in an upright frame assembly (34). The lifting force is provided by a drive unit (12) mounted to the support assembly (14) that winds and unwinds a flexible member (18) through a guide arrangement (68, 70, 72, 74, 76, 78, 80, 82) mounted to the support assembly (14). The flexible member (18) is preferably an assembly of cables, more preferably four primary cables (52, 54, 56, 58) each having one end attached to the ceiling of the vehicle and their opposite ends coupled together and linked to a leader cable (50) which is wound about the drive spindle (44). The primary cables (52, 54, 56, 58) travel around the guides (68, 70, 72, 74, 76, 78, 80, 82), which can be an arrangement of single and double sheaves or pulleys, to translate the winding force to vertical forces that raise or lower the support assembly (14).
摘要翻译：本发明提供了一种用于休闲车辆内的双层床的垂直提升机构（10）。该机构包括在直立框架组件（34）中上下移动的侧向支撑组件（14）。提升力由安装到支撑组件（14）的驱动单元（12）提供，该驱动单元通过引导装置（68,70,72,74,76,78,80,82）卷绕并展开柔性构件）安装到所述支撑组件（14）上。柔性构件（18）优选地是电缆的组件，更优选地是四个主电缆（52,54,56,58），每个主电缆具有连接到车辆的天花板的一端，并且其相对的端部联接在一起并连接到引导电缆（50）围绕驱动轴（44）缠绕。主电缆（52,54,56,58）围绕引导件（68,70,72,74,76,78,80,82）行进，引导件可以是单滑轮或双滑轮或滑轮的布置，以将向上升或下降支撑组件（14）的垂直力的缠绕力。

2. 发明申请

US20080129086A1 Vehicle Lift Mechanism 有权
标题翻译：车辆升降机构
公开(公告)号：US20080129086A1
公开(公告)日：2008-06-05
申请号：US11630932
申请日：2005-06-29
申请人： James K. Holmes , Douglas J. Yoder , Gary D. Peter
发明人： James K. Holmes , Douglas J. Yoder , Gary D. Peter
IPC分类号： A47C17/80 , B66D1/12
CPC分类号： B60P3/36 , B60P1/02
摘要： The invention provides a vertical lift mechanism (10) for a bunk bed within a recreational vehicle. The mechanism includes a lateral support assembly (14) that travels up and down in an upright frame assembly (34). The lifting force is provided by a drive unit (12) mounted to the support assembly (14) that winds and unwinds a flexible member (18) through a guide arrangement (68, 70, 72, 74, 76, 78, 80, 82) mounted to the support assembly (14). The flexible member (18) is preferably an assembly of cables, more preferably four primary cables (52, 54, 56, 58) each having one end attached to the ceiling of the vehicle and their opposite ends coupled together and linked to a leader cable (50) which is wound about the drive spindle (44). The primary cables (52, 54, 56, 58) travel around the guides (68, 70, 72, 74, 76, 78, 80, 82), which can be an arrangement of single and double sheaves or pulleys, to translate the winding force to vertical forces that raise or lower the support assembly (14).
摘要翻译：本发明提供了一种用于休闲车辆内的双层床的垂直提升机构（10）。该机构包括在直立框架组件（34）中上下移动的侧向支撑组件（14）。提升力由安装到支撑组件（14）的驱动单元（12）提供，该驱动单元通过引导装置（68,70,72,74,76,78,80,82）卷绕并展开柔性构件）安装到所述支撑组件（14）上。柔性构件（18）优选地是电缆的组件，更优选地是四个主电缆（52,54,56,58），每个主电缆具有连接到车辆的天花板的一端，并且其相对的端部联接在一起并连接到引导电缆（50）围绕驱动轴（44）缠绕。主电缆（52,54,56,58）围绕引导件（68,70,72,74,76,78,80,82）行进，引导件可以是单滑轮或双滑轮或滑轮的布置，以将向上升或下降支撑组件（14）的垂直力的缠绕力。

3. 发明授权

US4993143A Method of making a semiconductive structure useful as a pressure sensor 失效
标题翻译：制造用作压力传感器的半导体结构的方法
公开(公告)号：US4993143A
公开(公告)日：1991-02-19
申请号：US488349
申请日：1990-03-27
申请人： Diane W. Sidner , Douglas J. Yoder , David E. Moss
发明人： Diane W. Sidner , Douglas J. Yoder , David E. Moss
IPC分类号： G01L9/00
CPC分类号： G01L9/0054 , G01L9/0045 , Y10T29/49103
摘要： A pressure sensor uses a monocrystalline silicon chip that has a diaphragm portion in which strain gages are formed that overlie a buried cavity. The cavity is formed by a single sided semiconductor fabrication process that includes a pair of preferential etching steps and an epitaxial deposition step.
摘要翻译：压力传感器使用具有隔膜部分的单晶硅芯片，其中形成覆盖在埋入腔体上的应变计。空腔由单面半导体制造工艺形成，其包括一对优选蚀刻步骤和外延沉积步骤。

4. 发明授权

US4975759A Semiconductive stalk structure 失效
标题翻译：半导体茎结构
公开(公告)号：US4975759A
公开(公告)日：1990-12-04
申请号：US318887
申请日：1989-03-06
申请人： Diane W. Sidner , Douglas J. Yoder , David E. Moss
发明人： Diane W. Sidner , Douglas J. Yoder , David E. Moss
IPC分类号： H01L21/762
CPC分类号： H01L21/76294
摘要： A moat having a flat bottom and tapered side walls is formed in a monocrystalline silicon body (substrate) and extends from a top surface of the substrate into the substrate. An oxide layer is grown over side walls and a bottom of the moat and then is selectively removed from the bottom of the moat to expose silicon. An epitaxial stalk (a recessed mesa) is grown on the silicon at the bottom of the moat to a height which makes its top at least coplanar with the top surface of the substrate.
摘要翻译：在单晶硅体（衬底）中形成具有平坦底部和锥形侧壁的护城河，并从衬底的顶表面延伸到衬底中。在侧壁和护城河的底部生长氧化物层，然后从护城河的底部选择性地除去氧化层以暴露硅。外延茎（凹陷台面）在护城河底部的硅上生长到使其顶部至少与基底的顶表面共面的高度。

5. 发明授权

US5034342A Method of forming semiconductor stalk structure by epitaxial growth in trench 失效
标题翻译：通过在沟槽中外延生长形成半导体茎结构的方法
公开(公告)号：US5034342A
公开(公告)日：1991-07-23
申请号：US546289
申请日：1990-06-29
申请人： Diane W. Sidner , Douglas J. Yoder , David E. Moss
发明人： Diane W. Sidner , Douglas J. Yoder , David E. Moss
IPC分类号： H01L21/762
CPC分类号： H01L21/76294 , Y10S438/936
摘要： A moat having a flat bottom and tapered side walls is formed in a monocrystalline silicon body (substrate) and extends from a top surface of the substrate into the substrate. An oxide layer is grown over side walls and a bottom of the moat and then is selectively removed from the bottom of the moat to expose silicon. An epitaxial stalk (a recessed mesa) is grown on the silicon at the bottom of the moat to a height which makes its top at least coplanar with the top surface of the substrate.
摘要翻译：在单晶硅体（衬底）中形成具有平坦底部和锥形侧壁的护城河，并从衬底的顶表面延伸到衬底中。在侧壁和护城河的底部生长氧化物层，然后从护城河的底部选择性地除去氧化层以暴露硅。外延茎（凹陷台面）在护城河底部的硅上生长到使其顶部至少与基底的顶表面共面的高度。

6. 发明授权

US4977101A Monolithic pressure sensitive integrated circuit 失效
标题翻译：单片压敏集成电路
公开(公告)号：US4977101A
公开(公告)日：1990-12-11
申请号：US396250
申请日：1989-08-21
申请人： Douglas J. Yoder , Ronald E. Brown , Paul E. Stevenson , Donald L. Hornback , Ronald K. Leisure
发明人： Douglas J. Yoder , Ronald E. Brown , Paul E. Stevenson , Donald L. Hornback , Ronald K. Leisure
IPC分类号： G01L9/00
CPC分类号： B81C1/00246 , G01L9/0042 , B81C2203/0735 , Y10S438/924
摘要： A monolithic pressure sensitive silicon integrated circuit is formed by first providing a localized etch-stop layer on one surface of the silicon chip, then growing successive epitaxial layers of opposite conductivity types over this surface. In the upper of the two layers, there is formed a bridge of four piezoresistors overlying the periphery of the etch-stop layer and the conditioning circuitry for amplifying the output of the bridge including both lateral and vertical junction transistors. The back surface of the chip is etched anisotropically to form a cavity that leaves a thin diaphragm underlying the bridge of the four piezoresistors.
摘要翻译：通过首先在硅芯片的一个表面上提供局部蚀刻停止层，然后在该表面上生长具有相反导电类型的连续外延层，形成单片压敏硅集成电路。在两层的上部，形成了覆盖蚀刻停止层的周边的四个压敏电阻桥和用于放大包括横向和垂直结晶体管的桥的输出的调节电路的桥。各向异性地蚀刻芯片的后表面以形成在四个压电电阻器的桥下方留下薄膜的空腔。

7. 发明授权

US4945769A Semiconductive structure useful as a pressure sensor 失效
标题翻译：半导体结构用作压力传感器
公开(公告)号：US4945769A
公开(公告)日：1990-08-07
申请号：US319023
申请日：1989-03-06
申请人： Diane W. Sidner , Douglas J. Yoder , David E. Moss
发明人： Diane W. Sidner , Douglas J. Yoder , David E. Moss
IPC分类号： G01L9/00
CPC分类号： G01L9/0054 , G01L9/0042
摘要： A pressure sensor uses a monocrystalline silicon chip that has a diaphragm portion in which strain gages are formed that overlie a buried cavity. The cavity is formed by a single sided semiconductor fabrication process that includes a pair of preferential etching steps and an epitaxial deposition step.
摘要翻译：压力传感器使用具有隔膜部分的单晶硅芯片，其中形成覆盖在埋入腔体上的应变计。空腔由单面半导体制造工艺形成，其包括一对优选蚀刻步骤和外延沉积步骤。

8. 发明授权

US4885621A Monolithic pressure sensitive integrated circuit 失效
标题翻译：单片压敏集成电路
公开(公告)号：US4885621A
公开(公告)日：1989-12-05
申请号：US189446
申请日：1988-05-02
申请人： Douglas J. Yoder , Ronald E. Brown , Paul E. Stevenson , Donald L. Hornback , Ronald K. Leisure
发明人： Douglas J. Yoder , Ronald E. Brown , Paul E. Stevenson , Donald L. Hornback , Ronald K. Leisure
IPC分类号： G01L9/04 , G01L9/00 , H01L29/84
CPC分类号： G01L9/0042
摘要： A monolithic pressure sensitive silicon integrated circuit is formed by first providing a localized etch-stop layer on one surface of the silicon chip, then growing successive epitaxial layers of opposite conductivity types over this surface. In the upper of the two layers, there is formed a bridge of four piezoresistors overlying the periphery of the etch-stop layer and the conditioning circuitry for amplifying the output of the bridge including both lateral and vertical junction transistors. The back surface of the chip is etched anisotropically to form a cavity that leaves a thin diaphragm underlying the bridge of the four piezoresistors.

9. 发明授权

US06802555B2 Leveling ramp assembly for slide-out room 有权
标题翻译：平整坡道总成为滑出室
公开(公告)号：US06802555B2
公开(公告)日：2004-10-12
申请号：US10639043
申请日：2003-08-12
申请人： Douglas J. Yoder , Jerry L. Babcock
发明人： Douglas J. Yoder , Jerry L. Babcock
IPC分类号： B60P334
CPC分类号： B60P3/34
摘要： A leveling ramp assembly for a vehicle slide-out room includes a ramp member and a face member, the ends of which are mounted to the vehicle floor by a pair of end members. The ramp provides a declined surface extending from the vehicle floor to a base rail from which a channel flange depends defining an outwardly opening horizontal channel. The face member mounts to the front of the ramp member by inserting its support rail into the channel. The channel flange and support rail have corresponding lengthwise grip regions that mate and improve the connection. The assembly is modular in that any number of shorten ramp or face members can be coupled end to end to span the width of the slide-out room and the face member(s) can be interchanged with other face members having various profiles.
摘要翻译：用于车辆滑出室的调平斜坡组件包括斜坡构件和面构件，其端部由一对端构件安装到车辆地板。坡道提供从车辆地板延伸到基座轨道的倾斜表面，通道凸缘从该轨道限定向外开放的水平通道。面部构件通过将其支撑轨插入通道而安装到斜坡构件的前部。通道法兰和支撑导轨具有相应的纵向夹紧区域，以配合和改善连接。组件是模块化的，其中任何数量的缩短斜面或面部构件可以端对端地连接以跨越滑出室的宽度，并且面部构件可以与具有各种轮廓的其他面部构件互换。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式