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1. 发明授权

US06984482B2 Top-coating composition for photoresist and process for forming fine pattern using the same 失效
标题翻译：用于光致抗蚀剂的顶涂组合物和使用其形成精细图案的方法
公开(公告)号：US06984482B2
公开(公告)日：2006-01-10
申请号：US10174497
申请日：2002-06-17
申请人： Jae Chang Jung , Keun Kyu Kong , Hyeong Soo Kim , Jin Soo Kim , Cha Won Koh , Sung Eun Hong , Geun Su Lee , Min Ho Jung , Ki Ho Baik
发明人： Jae Chang Jung , Keun Kyu Kong , Hyeong Soo Kim , Jin Soo Kim , Cha Won Koh , Sung Eun Hong , Geun Su Lee , Min Ho Jung , Ki Ho Baik
IPC分类号： G03F7/11 , G03F7/09 , G03F7/00
CPC分类号： G03F7/11 , G03F7/0045
摘要： The present invention provides an over-coating composition comprising a basic compound for coating a photoresist composition to provide a vertical photoresist pattern.
摘要翻译：本发明提供一种包覆组合物，其包含用于涂覆光致抗蚀剂组合物以提供垂直光致抗蚀剂图案的碱性化合物。

2. 发明授权

US06770414B2 Additive for photoresist composition for resist flow process 失效
标题翻译：光刻胶组合物用于抗蚀剂流程的添加剂
公开(公告)号：US06770414B2
公开(公告)日：2004-08-03
申请号：US09878803
申请日：2001-06-11
申请人： Min Ho Jung , Sung Eun Hong , Jae Chang Jung , Geun Su Lee , Ki Ho Baik
发明人： Min Ho Jung , Sung Eun Hong , Jae Chang Jung , Geun Su Lee , Ki Ho Baik
IPC分类号： G03F700
CPC分类号： G03F7/0395 , C07J9/00 , G03F7/0045 , Y10S430/106 , Y10S430/111 , Y10S430/115 , Y10T428/24802
摘要： The present invention provides an additive for a photoresist composition for a resist flow process. A compound of following Formula 1 having low glass transition temperature is added to a photoresist composition containing a polymer which is not suitable for the resist flow process due to its high glass transition temperature, thus improving a flow property of the photoresist composition. As a result, the photoresist composition comprising an additive of Formula 1 can be used for the resist flow process. wherein, A, B, R and R′ are as defined in the specification of the invention.
摘要翻译：本发明提供了用于抗蚀剂流动方法的光致抗蚀剂组合物的添加剂。将具有低玻璃化转变温度的下述式1化合物加入含有聚合物的光致抗蚀剂组合物中，该聚合物由于其玻璃化转变温度高而不适于抗蚀剂流动过程，从而改善光致抗蚀剂组合物的流动性能。结果，包含式1的添加剂的光致抗蚀剂组合物可用于抗蚀剂流动过程。其中A，B，R和R'如本发明的说明书中所定义。

3. 发明授权

US06569599B2 Partially crosslinked polymer for bilayer photoresist 失效
标题翻译：用于双层光致抗蚀剂的部分交联聚合物
公开(公告)号：US06569599B2
公开(公告)日：2003-05-27
申请号：US09852371
申请日：2001-05-10
申请人： Geun Su Lee , Jae Chang Jung , Min Ho Jung , Ki Ho Baik
发明人： Geun Su Lee , Jae Chang Jung , Min Ho Jung , Ki Ho Baik
IPC分类号： G03F7004
CPC分类号： G03F7/0758 , G03F7/0045 , G03F7/095 , Y10S430/106 , Y10S430/111
摘要： The present invention provides photoresist polymers, processes for producing the same, photoresist compositions comprising such polymers, and processes for producing a photoresist pattern using such photoresist compositions. In particular, photoresist polymers of the present invention comprise a moiety of the Formula: where R1, R2, R3 and R4 are those defined herein. Photoresist polymers of the present invention have a relatively high etching resistance, and therefore are useful in thin resist processes and bilayer photoresist processes. Moreover, photoresist polymers of the present invention have a high contrast ratio between the exposed region and the non-exposed region.
摘要翻译：本发明提供光致抗蚀剂聚合物，其制备方法，包含这种聚合物的光致抗蚀剂组合物，以及使用这种光致抗蚀剂组合物制备光刻胶图案的方法。特别地，本发明的光致抗蚀剂聚合物包含下式的部分：其中R 1，R 2，R 3和R 4是本文定义的那些。本发明的光致抗蚀剂聚合物具有相对高的抗蚀刻性，因此可用于薄抗蚀剂工艺和双层光刻胶工艺。此外，本发明的光致抗蚀剂聚合物在曝光区域和非曝光区域之间具有高对比度。

4. 发明授权

US06391518B1 Polymers and photoresist compositions using the same 失效
标题翻译：聚合物和使用其的光致抗蚀剂组合物
公开(公告)号：US06391518B1
公开(公告)日：2002-05-21
申请号：US09360402
申请日：1999-07-23
申请人： Min Ho Jung , Jae Chang Jung , Geun Su Lee , Ki Ho Baik
发明人： Min Ho Jung , Jae Chang Jung , Geun Su Lee , Ki Ho Baik
IPC分类号： G03F7004
CPC分类号： C08F232/08 , G03F7/0382 , G03F7/0395
摘要： The present invention provides a photoresist monomer represented by the following formula 2; a photoresist copolymer represented by the following formula 100; and a photoresist composition containing the same. wherein, R1 and R2 are independently —COOH or —R—COOH; and R is a substituted or unsubstituted (C1-C10) alkyl. wherein, R1 and R2 are independently —COOH or —R—COOH ; R is a substituted or unsubstituted (C1-C10) alkyl; R3 is —COOR* or —R′COOR*; R* is an acid labile group; R′ is a substituted or unsubstituted (C1-C10) alkyl; R4 is H or R3; R5 is a substituted or unsubstituted (C1-C10) alkyl; and a:b:c is the polymerization ratio of the comonomer.
摘要翻译：本发明提供由下式2表示的光致抗蚀剂单体; 由下式100表示的光致抗蚀剂共聚物; 和含有它们的光致抗蚀剂组合物，其中R 1和R 2独立地是-COOH或-R-COOH; 并且R是取代或未取代的（C1-C10）烷基。其中R1和R2独立地是-COOH或-R-COOH; R是取代或未取代的（C 1 -C 10）烷基; R3是-COOR *或-R'COOR *; R *是酸不稳定组; R'是取代或未取代的（C 1 -C 10）烷基; R4是H或R3; R5是取代或未取代的（C1-C10）烷基; 和a：b：c是共聚单体的聚合比。

5. 发明授权

US06376632B1 Photoresist polymers of carboxyl-containing alicyclic compounds 失效
标题翻译：含羧基脂环化合物的光致抗蚀剂聚合物
公开(公告)号：US06376632B1
公开(公告)日：2002-04-23
申请号：US09850177
申请日：2001-05-07
申请人： Geun Su Lee , Jae Chang Jung , Min Ho Jung , Cheol Kyu Bok , Ki Ho Baik
发明人： Geun Su Lee , Jae Chang Jung , Min Ho Jung , Cheol Kyu Bok , Ki Ho Baik
IPC分类号： C08F13204
CPC分类号： C07C59/46 , C07C57/26 , C07C59/80 , C07C69/608 , C07C69/732 , C07C69/738 , C08G61/08 , G03F7/0045 , G03F7/039 , Y10S430/106
摘要： The present invention relates to a carboxyl-containing alicyclic compound represented by Chemical Formula 1: [formula 1] wherein, R1 and R2, which may be identical to or different from each other, represent hydrogen or a tert-butyl group; X represents hydrogen, hydroxy or oxygen; and n represents a number from 1 to 3. Compounds of the present invention are useful as monomers in a photoresist resin, and in a process for preparing the same.
摘要翻译：本发明涉及由化学式1表示的含羧基脂环族化合物：[式1]其中R1和R2可以相同或不同，表示氢或叔丁基; X表示氢，羟基或氧; n表示1〜3的数。本发明的化合物可用作光致抗蚀剂树脂中的单体，也可用作其制备方法。

6. 发明授权

US06586619B2 Photoresist monomer having hydroxy group and carboxy group, copolymer thereof and photoresist composition using the same 有权
标题翻译：具有羟基和羧基的光致抗蚀剂单体，其共聚物和使用其的光致抗蚀剂组合物
公开(公告)号：US06586619B2
公开(公告)日：2003-07-01
申请号：US10079753
申请日：2002-02-19
申请人： Geun Su Lee , Cha Won Koh , Jae Chang Jung , Min Ho Jung , Ki Ho Baik
发明人： Geun Su Lee , Cha Won Koh , Jae Chang Jung , Min Ho Jung , Ki Ho Baik
IPC分类号： C07C6974
CPC分类号： C07D493/08 , C07C69/753 , C08F32/08 , G03F7/0045 , G03F7/039
摘要： The present invention relates to novel monomers which can be used to form polymers which are useful in a photolithography employing a light source in the far ultraviolet region of the light spectrum, copolymers thereof, and photoresist compositions prepared therefrom. Photoresist monomers of the present invention are represented by the following Chemical Formula 1: wherein, R is substituted or non-substituted linear or branched (C1-C10) alkyl, substituted or non-substituted (C1-C10) ether, substituted or non-substituted (C1-C10) ester, or substituted or non-substituted (C1-C10) ketone; X and Y are independently CH2, CH2CH2, oxygen or sulfur; and i is 0 or an integer of 1 to 2.
摘要翻译：本发明涉及可用于形成聚合物的新型单体，其可用于使用光谱的远紫外区域中的光源的光刻法，其共聚物和由其制备的光致抗蚀剂组合物。本发明的光致抗蚀剂单体由以下化学式1表示：其中，R为取代或未取代的直链或支链（C1-C10）烷基，取代或未取代的（C1-C10）醚，取代的（C1-C10）酯或取代或未取代的（C1-C10）酮; X和Y独立地是CH2，CH2CH2，氧或硫; andi为0或1〜2的整数。

7. 发明授权

US06410670B1 Photoresist monomer having hydroxy group and carboxy group, copolymer thereof and photoresist composition using the same 有权
标题翻译：具有羟基和羧基的光致抗蚀剂单体，其共聚物和使用其的光致抗蚀剂组合物
公开(公告)号：US06410670B1
公开(公告)日：2002-06-25
申请号：US09383861
申请日：1999-08-26
申请人： Geun Su Lee , Cha Won Koh , Jae Chang Jung , Min Ho Jung , Ki Ho Baik
发明人： Geun Su Lee , Cha Won Koh , Jae Chang Jung , Min Ho Jung , Ki Ho Baik
IPC分类号： C08J13208
CPC分类号： C07D493/08 , C07C69/753 , C08F32/08 , G03F7/0045 , G03F7/039
摘要： The present invention relates to novel monomers and their polymers, which are useful in a photolithography employing a light source in the far ultraviolet region of the light spectrum, copolymers thereof, and photoresist compositions prepared therefrom. Photoresist monomers of the present invention are represented by the following Chemical Formula 1: wherein, R is substituted or non-substituted linear or branched (C1-C10)alkyl, substituted or non-substituted (C1-C10)ether, substituted or non-substituted (C1-C10)ester, or substituted or non-substituted (C1-C10)ketone; X and Y are independently CH2, CH2CH2, oxygen or sulfur; and i is 0 or an integer of 1 to 2.
摘要翻译：本发明涉及新颖的单体及其聚合物，它们可用于光光谱在光谱的远紫外区域中的光刻，其共聚物和由其制备的光致抗蚀剂组合物。本发明的光致抗蚀剂单体由以下化学式1表示：其中，R为取代或未取代的直链或支链（C1-C10）烷基，取代或未取代的（C1-C10）醚，取代的（C1-C10）酯或取代或未取代的（C1-C10）酮; X和Y独立地是CH 2，CH 2 CH 2，氧或硫; i为0或1〜2的整数。

8. 发明授权

US06235448B1 Photoresist monomers, polymers thereof, and photoresist compositions containing the same 有权
标题翻译：光致抗蚀剂单体，其聚合物和含有它们的光致抗蚀剂组合物
公开(公告)号：US06235448B1
公开(公告)日：2001-05-22
申请号：US09448911
申请日：1999-11-24
申请人： Geun Su Lee , Min Ho Jung , Jae Chang Jung , Cheol Kyu Bok , Ki Ho Baik
发明人： Geun Su Lee , Min Ho Jung , Jae Chang Jung , Cheol Kyu Bok , Ki Ho Baik
IPC分类号： G03C172
CPC分类号： G03F7/0045 , G03F7/038 , G03F7/265
摘要： The present invention relates to monomers and polymers prepared therefrom, which are suitable for forming photoresist compositions employed in lithography processes using a deep ultraviolet light source, in particular an ArF light source. According to the present invention, novel monomers represented by Chemical Formula 1, are provided: wherein R represents a C1-C10 alkyl group, and m is the number 1 or 2. as well as copolymers prepared by using said monomers as represented by Chemical Formula 8: wherein R represents a C1-C10 alkyl group; R′ represents H or —COOH; m is the number 1 or 2; n is a number from 1 to 3; and X represents CH2, NH or O; and a, b and c represent the number of repeating of the respective monomers.
摘要翻译：本发明涉及由其制备的单体和聚合物，其适用于在使用深紫外光源，特别是ArF光源的光刻工艺中用于形成光刻胶组合物。根据本发明，由化学式1，提供：其中R表示C1-C10烷基，m是数字1或2.以及通过使用由化学式8表示的所述单体制备的共聚物：其中R表示C1-C10烷基; R'表示H或-COOH; m是数字1或2; n是从1到3的数字; X表示CH 2，NH或O; a，b和c表示各单体的重复次数。

9. 发明授权

US6150069A Oxabicyclo compound, a polymer-containing said compound, and a photoresist micro pattern forming method using the same 有权
标题翻译：氧杂双环化合物，含聚合物的所述化合物和使用其的光致抗蚀剂微图案形成方法
公开(公告)号：US6150069A
公开(公告)日：2000-11-21
申请号：US311488
申请日：1999-05-13
申请人： Jae Chang Jung , Chi Hyeong Roh , Min Ho Jung , Geun Su Lee , Ki Ho Baik
发明人： Jae Chang Jung , Chi Hyeong Roh , Min Ho Jung , Geun Su Lee , Ki Ho Baik
IPC分类号： C07D493/08 , C08F22/06 , C08F32/00 , C08L45/00 , G03F7/004 , G03F7/038 , G03F7/039
CPC分类号： G03F7/039 , G03F7/0045
摘要： The present invention relates to oxabicyclo compounds and a method of preparing the same. The compounds of the present invention can be used as monomers for preparing a photoresist resin which is useful in photolithography processes using ultra-violet light sources, and are represented by the following Formula 1: ##STR1## wherein, R.sub.1 and R.sub.2 are the same or different, and represent a hydrogen or a C.sub.1 -C.sub.4 straight or branched chain substituted alkyl group; and m is a number from 1 to 4.In other embodiments, the present invention relates to an ArF or a KrF photoresist resin containing an oxabicyclo monomer, and compositions and photoresist micro pattern forming methods using the same.
摘要翻译：本发明涉及氧杂双环化合物及其制备方法。本发明的化合物可以用作制备光致抗蚀剂树脂的单体，其可用于使用紫外光源的光刻工艺中，并且由下式1表示：其中R1和R2相同或不同，并且表示氢或C1-C4直链或支链取代的烷基; m是1至4的数。在其它实施方案中，本发明涉及含有氧杂双环单体的ArF或KrF光致抗蚀剂树脂，以及使用其的组合物和光致抗蚀剂微图案形成方法。

10. 发明授权

US07329477B2 Process for forming a fine pattern using a top-coating composition for a photoresist and product formed by same 失效
标题翻译：使用用于光刻胶的顶涂组合物和由其形成的产品形成精细图案的方法
公开(公告)号：US07329477B2
公开(公告)日：2008-02-12
申请号：US10993869
申请日：2004-11-19
申请人： Jae Chang Jung , Keun Kyu Kong , Hyeong Soo Kim , Jin Soo Kim , Cha Won Koh , Sung Eun Hong , Geun Su Lee , Min Ho Jung , Ki Ho Baik
发明人： Jae Chang Jung , Keun Kyu Kong , Hyeong Soo Kim , Jin Soo Kim , Cha Won Koh , Sung Eun Hong , Geun Su Lee , Min Ho Jung , Ki Ho Baik
IPC分类号： G03F7/00 , G03F7/004
CPC分类号： G03F7/11 , G03F7/0045
摘要： The present invention provides a process for using an amine contamination-protecting top-coating composition. Preferably, the amine contamination-protecting top-coating composition of the present invention comprises an amine contamination-protecting compound. Useful amine contamination-protecting compounds include amine derivatives; amino acid derivatives; amide derivatives; urethane derivatives; urea derivatives; salts thereof; and mixtures thereof. The amine contamination-protecting top-coating composition of the present invention reduces or eliminates problems such as T-topping due to a post exposure delay effect and/or difficulties in forming a fine pattern below 100 nm due to acid diffusion associated with conventional lithography processes involving a photoresist polymer containing an alicyclic main chain using a light source, such as KrF (248 nm), ArF (193 nm), F2 (157 nm), E-beam, ion beam and extremely ultraviolet (EUV).
摘要翻译：本发明提供了使用胺类污染物保护性顶涂层组合物的方法。优选地，本发明的胺污染保护性顶涂剂组合物包含胺污染保护化合物。有用的胺污染保护化合物包括胺衍生物; 氨基酸衍生物; 酰胺衍生物; 氨基甲酸酯衍生物; 尿素衍生物; 的盐; 及其混合物。本发明的胺污染保护性顶涂剂组合物由于后曝光延迟效应而降低或消除诸如T形顶部的问题和/或由于与常规光刻工艺相关的酸扩散而难以形成低于100nm的精细图案涉及使用诸如KrF（248nm），ArF（193nm），F 2 N（157nm），电子束，离子束等的光源的含有脂环族主链的光致抗蚀剂聚合物紫外线（EUV）。

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