专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20080096361A1 STRUCTURE FOR REALIZING INTEGRATED CIRCUIT HAVING SCHOTTKY DIODE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：用于实现具有肖特基二极管的集成电路的结构及其制造方法
公开(公告)号：US20080096361A1
公开(公告)日：2008-04-24
申请号：US11963354
申请日：2007-12-21
申请人： Ja-nam KU , Seong-hearn Lee , Il-jong Song , Young-hoon Min , Sang-wook Kwon
发明人： Ja-nam KU , Seong-hearn Lee , Il-jong Song , Young-hoon Min , Sang-wook Kwon
IPC分类号： H01L21/20
CPC分类号： H01L29/872 , H01L27/0788
摘要： An integrated circuit structure in which a plurality of Schottky diodes and a capacitor are integrally formed. The integrated circuit structure includes a substrate including an N-type semiconductor doped with N-type impurities and a P-type semiconductor doped with P-type impurities; a first conductive layer laminated on the substrate so that the first conductive layer is electrically connected to the N-type semiconductor and the P-type semiconductor; a dielectric layer laminated on an upper surface of the first conductive layer; and a second conductive layer laminated on an upper surface of the dielectric layer so that the second conductive layer forms a capacitor together with the first conductive layer and the dielectric layer. Accordingly, when the integrated circuit structure is used in a rectification circuit, the size of an entire circuit can be reduced.
摘要翻译：一体形成多个肖特基二极管和电容器的集成电路结构。集成电路结构包括：衬底，其包括掺杂有N型杂质的N型半导体和掺杂有P型杂质的P型半导体; 层叠在所述基板上的第一导电层，使得所述第一导电层与所述N型半导体和所述P型半导体电连接; 层压在所述第一导电层的上表面上的电介质层; 以及层叠在电介质层的上表面上的第二导电层，使得第二导电层与第一导电层和电介质层一起形成电容器。因此，当在整流电路中使用集成电路结构时，可以减小整个电路的尺寸。

2. 发明申请

US20050269658A1 Structure for realizing integrated circuit having schottky biode and method of fabricating the same 有权
标题翻译：用于实现具有肖特基生物体的集成电路的结构及其制造方法
公开(公告)号：US20050269658A1
公开(公告)日：2005-12-08
申请号：US11147164
申请日：2005-06-08
申请人： Ja-nam Ku , Seong-hearn Lee , Il-jong Song , Young-hoon Min , Sang-wook Kwon
发明人： Ja-nam Ku , Seong-hearn Lee , Il-jong Song , Young-hoon Min , Sang-wook Kwon
IPC分类号： H01L29/872 , G06K19/07 , G06K19/077 , H01L21/28 , H01L21/822 , H01L27/04 , H01L27/07 , H01L29/47 , H01L29/732
CPC分类号： H01L29/872 , H01L27/0788
摘要： An integrated circuit structure in which a plurality of Schottky diodes and a capacitor are integrally formed. The integrated circuit structure includes a substrate including an N-type semiconductor doped with N-type impurities and a P-type semiconductor doped with P-type impurities; a first conductive layer laminated on the substrate so that the first conductive layer is electrically connected to the N-type semiconductor and the P-type semiconductor; a dielectric layer laminated on an upper surface of the first conductive layer; and a second conductive layer laminated on an upper surface of the dielectric layer so that the second conductive layer forms a capacitor together with the first conductive layer and the dielectric layer. Accordingly, when the integrated circuit structure is used in a rectification circuit, the size of an entire circuit can be reduced.
摘要翻译：一体形成多个肖特基二极管和电容器的集成电路结构。集成电路结构包括：衬底，其包括掺杂有N型杂质的N型半导体和掺杂有P型杂质的P型半导体; 层叠在所述基板上的第一导电层，使得所述第一导电层与所述N型半导体和所述P型半导体电连接; 层压在所述第一导电层的上表面上的电介质层; 以及层叠在电介质层的上表面上的第二导电层，使得第二导电层与第一导电层和电介质层一起形成电容器。因此，当在整流电路中使用集成电路结构时，可以减小整个电路的尺寸。

3. 发明授权

US07625804B2 Structure for realizing integrated circuit having Schottky diode and method of fabricating the same 有权
标题翻译：用于实现具有肖特基二极管的集成电路的结构及其制造方法
公开(公告)号：US07625804B2
公开(公告)日：2009-12-01
申请号：US11963354
申请日：2007-12-21
申请人： Ja-nam Ku , Seong-hearn Lee , Il-jong Song , Young-hoon Min , Sang-wook Kwon
发明人： Ja-nam Ku , Seong-hearn Lee , Il-jong Song , Young-hoon Min , Sang-wook Kwon
IPC分类号： H01L21/20
CPC分类号： H01L29/872 , H01L27/0788
摘要： An integrated circuit structure in which a plurality of Schottky diodes and a capacitor are integrally formed. The integrated circuit structure includes a substrate including an N-type semiconductor doped with N-type impurities and a P-type semiconductor doped with P-type impurities; a first conductive layer laminated on the substrate so that the first conductive layer is electrically connected to the N-type semiconductor and the P-type semiconductor; a dielectric layer laminated on an upper surface of the first conductive layer; and a second conductive layer laminated on an upper surface of the dielectric layer so that the second conductive layer forms a capacitor together with the first conductive layer and the dielectric layer. Accordingly, when the integrated circuit structure is used in a rectification circuit, the size of an entire circuit can be reduced.
摘要翻译：一体形成多个肖特基二极管和电容器的集成电路结构。集成电路结构包括：衬底，其包括掺杂有N型杂质的N型半导体和掺杂有P型杂质的P型半导体; 层叠在所述基板上的第一导电层，使得所述第一导电层与所述N型半导体和所述P型半导体电连接; 层压在所述第一导电层的上表面上的电介质层; 以及层叠在电介质层的上表面上的第二导电层，使得第二导电层与第一导电层和电介质层一起形成电容器。因此，当在整流电路中使用集成电路结构时，可以减小整个电路的尺寸。

4. 发明授权

US07332787B2 Structure for realizing integrated circuit having schottky biode and method of fabricating the same 有权
标题翻译：用于实现具有肖特基生物体的集成电路的结构及其制造方法
公开(公告)号：US07332787B2
公开(公告)日：2008-02-19
申请号：US11147164
申请日：2005-06-08
申请人： Ja-nam Ku , Seong-hearn Lee , Il-jong Song , Young-hoon Min , Sang-wook Kwon
发明人： Ja-nam Ku , Seong-hearn Lee , Il-jong Song , Young-hoon Min , Sang-wook Kwon
IPC分类号： H01L29/732
CPC分类号： H01L29/872 , H01L27/0788
摘要： An integrated circuit structure in which a plurality of Schottky diodes and a capacitor are integrally formed. The integrated circuit structure includes a substrate including an N-type semiconductor doped with N-type impurities and a P-type semiconductor doped with P-type impurities; a first conductive layer laminated on the substrate so that the first conductive layer is electrically connected to the N-type semiconductor and the P-type semiconductor; a dielectric layer laminated on an upper surface of the first conductive layer; and a second conductive layer laminated on an upper surface of the dielectric layer so that the second conductive layer forms a capacitor together with the first conductive layer and the dielectric layer. Accordingly, when the integrated circuit structure is used in a rectification circuit, the size of an entire circuit can be reduced.
摘要翻译：一体形成多个肖特基二极管和电容器的集成电路结构。集成电路结构包括：衬底，其包括掺杂有N型杂质的N型半导体和掺杂有P型杂质的P型半导体; 层叠在所述基板上的第一导电层，使得所述第一导电层与所述N型半导体和所述P型半导体电连接; 层压在所述第一导电层的上表面上的电介质层; 以及层叠在电介质层的上表面上的第二导电层，使得第二导电层与第一导电层和电介质层一起形成电容器。因此，当在整流电路中使用集成电路结构时，可以减小整个电路的尺寸。

5. 发明授权

US07503690B2 Temperature measurement apparatus and method for measuring temperatures by using RF signals of different frequencies 失效
标题翻译：通过使用不同频率的RF信号测量温度的温度测量装置和方法
公开(公告)号：US07503690B2
公开(公告)日：2009-03-17
申请号：US11148304
申请日：2005-06-09
申请人： Il-jong Song , Ja-nam Ku , Young-hoon Min , Sang-wook Kwon
发明人： Il-jong Song , Ja-nam Ku , Young-hoon Min , Sang-wook Kwon
IPC分类号： G01J5/00
CPC分类号： G01K13/00 , G01K1/024 , G01K7/01
摘要： Disclosed are a temperature measurement apparatus and method for measuring temperature by using RF signals having different frequencies. The temperature measurement apparatus includes a parameter generation unit for generating a first parameter based on a radio frequency (RF) signal having a first frequency and a second parameter based on an RF signal having a second frequency; a parameter detection unit for detecting the generated first and second parameters; and a control unit for calculating a temperature value based on the detected first and second parameters. Accordingly, the temperature measurement apparatus can measure temperature by use of existing components and received RF signals without any addition of a temperature sensor, as well as measure temperature precisely without having any influence on the intensities of RF signals that can vary due to the changes of transmission distances and signal-receiving environments.
摘要翻译：公开了通过使用具有不同频率的RF信号来测量温度的温度测量装置和方法。温度测量装置包括参数产生单元，用于基于具有第二频率的RF信号的具有第一频率和第二参数的射频（RF）信号产生第一参数; 参数检测单元，用于检测所生成的第一和第二参数; 以及控制单元，用于基于检测到的第一和第二参数来计算温度值。因此，温度测量装置可以通过使用现有部件和接收的RF信号来测量温度，而不需要任何温度传感器的添加，以及精确地测量温度，而不会对RF信号的强度产生任何影响，RF信号的强度可能由于传输距离和信号接收环境。

6. 发明申请

US20050276307A1 Temperature measurement apparatus and method for measuring temperatures by using RF signals of different frequencies 失效
标题翻译：通过使用不同频率的RF信号测量温度的温度测量装置和方法
公开(公告)号：US20050276307A1
公开(公告)日：2005-12-15
申请号：US11148304
申请日：2005-06-09
申请人： Il-jong Song , Ja-nam Ku , Young-hoon Min , Sang-wook Kwon
发明人： Il-jong Song , Ja-nam Ku , Young-hoon Min , Sang-wook Kwon
IPC分类号： G01K1/02 , G01J5/00 , G01K7/01 , G01K13/00 , G06K17/00 , G06K19/00 , G06K19/07
CPC分类号： G01K13/00 , G01K1/024 , G01K7/01
摘要： Disclosed are a temperature measurement apparatus and method for measuring temperature by using RF signals having different frequencies. The temperature measurement apparatus includes a parameter generation unit for generating a first parameter based on a radio frequency (RF) signal having a first frequency and a second parameter based on an RF signal having a second frequency; a parameter detection unit for detecting the generated first and second parameters; and a control unit for calculating a temperature value based on the detected first and second parameters. Accordingly, the temperature measurement apparatus can measure temperature by use of existing components and received RF signals without any addition of a temperature sensor, as well as measure temperature precisely without having any influence on the intensities of RF signals that can vary due to the changes of transmission distances and signal-receiving environments.
摘要翻译：公开了通过使用具有不同频率的RF信号来测量温度的温度测量装置和方法。温度测量装置包括参数产生单元，用于基于具有第二频率的RF信号的具有第一频率和第二参数的射频（RF）信号产生第一参数; 参数检测单元，用于检测所生成的第一和第二参数; 以及控制单元，用于基于检测到的第一和第二参数来计算温度值。因此，温度测量装置可以通过使用现有部件和接收的RF信号而不加温度传感器来测量温度，并且可以精确地测量温度，而不会对RF信号的强度产生任何影响，RF信号的强度可能由于传输距离和信号接收环境。

7. 发明申请

US20050270153A1 Radio frequency identification tag for transmitting temperature data and method therefor 有权
标题翻译：用于传输温度数据的射频识别标签及其方法
公开(公告)号：US20050270153A1
公开(公告)日：2005-12-08
申请号：US11147163
申请日：2005-06-08
申请人： Sang-wook Kwon , Ja-nam Ku , Il-jong Song , Young-hoon Min
发明人： Sang-wook Kwon , Ja-nam Ku , Il-jong Song , Young-hoon Min
IPC分类号： G06K19/10 , G06K19/07 , G08B1/08 , H04B5/02
CPC分类号： G06K19/0701 , G06K19/0723
摘要： A radio frequency identification tag, used in a radio frequency identification system, includes an antenna unit for receiving an external magnetic wave to generate an induced current; a driving voltage generating unit for converting the induced current into a constant voltage and outputting the constant voltage; and a state detecting unit for detecting information about a change in an operational state of the driving voltage generating unit. The tag further includes a memory for storing temperature data corresponding to the information about the change in the operational state and data needed for identification; and a controlling unit for reading out, from the memory, the temperature data dependent on the information about the change in the operational state detected by the state detecting unit and the identification data. The read temperature and identification data are transmitted via an antenna unit.
摘要翻译：在射频识别系统中使用的射频识别标签包括用于接收外部磁波以产生感应电流的天线单元; 驱动电压产生单元，用于将感应电流转换成恒定电压并输出该恒定电压; 以及状态检测单元，用于检测关于驱动电压产生单元的操作状态的变化的信息。标签还包括用于存储对应于关于操作状态的变化和识别所需的数据的信息的温度数据的存储器; 以及控制单元，用于从存储器读出取决于由状态检测单元检测到的操作状态变化的信息和识别数据的温度数据。读取温度和识别数据通过天线单元传输。

8. 发明授权

US07268685B2 Radio frequency identification tag for transmitting temperature data and method therefor 有权
标题翻译：用于传输温度数据的射频识别标签及其方法
公开(公告)号：US07268685B2
公开(公告)日：2007-09-11
申请号：US11147163
申请日：2005-06-08
申请人： Sang-wook Kwon , Ja-nam Ku , Il-jong Song , Young-hoon Min
发明人： Sang-wook Kwon , Ja-nam Ku , Il-jong Song , Young-hoon Min
IPC分类号： G08B13/14
CPC分类号： G06K19/0701 , G06K19/0723
摘要： A radio frequency identification tag, used in a radio frequency identification system, includes an antenna unit for receiving an external magnetic wave to generate an induced current; a driving voltage generating unit for converting the induced current into a constant voltage and outputting the constant voltage; and a state detecting unit for detecting information about a change in an operational state of the driving voltage generating unit. The tag further includes a memory for storing temperature data corresponding to the information about the change in the operational state and data needed for identification; and a controlling unit for reading out, from the memory, the temperature data dependent on the information about the change in the operational state detected by the state detecting unit and the identification data. The read temperature and identification data are transmitted via an antenna unit.
摘要翻译：在射频识别系统中使用的射频识别标签包括用于接收外部磁波以产生感应电流的天线单元; 驱动电压产生单元，用于将感应电流转换成恒定电压并输出该恒定电压; 以及状态检测单元，用于检测关于驱动电压产生单元的操作状态的变化的信息。标签还包括用于存储对应于关于操作状态的变化和识别所需的数据的信息的温度数据的存储器; 以及控制单元，用于从存储器读出取决于由状态检测单元检测到的操作状态变化的信息和识别数据的温度数据。读取温度和识别数据通过天线单元传输。

9. 发明申请

US20060198197A1 Ultra-low power limiter 失效
标题翻译：超低功率限幅器
公开(公告)号：US20060198197A1
公开(公告)日：2006-09-07
申请号：US11360615
申请日：2006-02-24
申请人： Ja-nam Ku , Chung-woul Kim , Young-hoon Min , Il-jong Song , Dong-hyun Lee
发明人： Ja-nam Ku , Chung-woul Kim , Young-hoon Min , Il-jong Song , Dong-hyun Lee
IPC分类号： G11C11/34 , G11C16/06
CPC分类号： H03K19/00315 , H03K17/08128
摘要： An over-voltage protection circuit (i.e., a limiter), includes: a first switching block having a plurality of semiconductor elements, serially connected to each other and turned on in sequence according to the magnitude of an input voltage; and a plurality of second switching blocks, in which each of the second switching blocks includes a pair of serially connected semiconductor elements having different current properties. The second switching blocks are connected in parallel to the first switching block. By minimizing a leakage current when an input voltage is below a reference voltage and by maximizing a leakage current when the input voltage is above the reference voltage, the limiter prevents excessive current from flowing into the RF tag circuit when the input voltage is below the reference voltage, and ensures that a sufficient amount of current is supplied to a regulator when the input voltage is below the reference voltage.
摘要翻译：过电压保护电路（即限幅器）包括：具有多个半导体元件的第一开关块，它们彼此串联连接并根据输入电压的大小依次导通; 以及多个第二切换块，其中每个第二切换块包括具有不同电流特性的一对串联连接的半导体元件。第二切换块与第一切换块并联连接。当输入电压低于参考电压时，通过使漏电流最小化，并且当输入电压高于参考电压时使漏电流最大化，当输入电压低于参考电压时，限幅器可防止过大的电流流入RF标签电路电压，并且确保当输入电压低于参考电压时，足够量的电流被提供给调节器。

10. 发明授权

US07382035B2 Schottky diode with low leakage current and fabrication method thereof 有权
标题翻译：具有低漏电流的肖特基二极管及其制造方法
公开(公告)号：US07382035B2
公开(公告)日：2008-06-03
申请号：US11356125
申请日：2006-02-17
申请人： Dong-sik Shim , Young-hoon Min , Il-jong Song , Ja-nam Ku , Hyung Choi
发明人： Dong-sik Shim , Young-hoon Min , Il-jong Song , Ja-nam Ku , Hyung Choi
IPC分类号： H01L29/47
CPC分类号： H01L29/872
摘要： A low leakage Schottky diode and fabrication method thereof. The Schottky diode includes a n-type semiconductor; an anode having a circular periphery formed in a region above the n-type semiconductor; and a cathode formed in a region above the n-type semiconductor and having a pattern surrounding and set apart from the outer periphery of the anode. Because there are no edges at the anode and cathode interface, leakage current is minimized.
摘要翻译：一种低泄漏肖特基二极管及其制造方法。肖特基二极管包括n型半导体; 具有形成在n型半导体上方的区域的圆形周边的阳极; 以及阴极，形成在n型半导体上方的区域中，并且具有围绕并与阳极的外周隔开的图案。因为在阳极和阴极界面处没有边缘，所以泄漏电流被最小化。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式