专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20010051446A1 Method of manufacturing insulating film-forming material, the insulating film-forming material, and insulating film 有权
标题翻译：绝缘膜形成材料的制造方法，绝缘膜形成材料和绝缘膜
公开(公告)号：US20010051446A1
公开(公告)日：2001-12-13
申请号：US09849302
申请日：2001-05-07
申请人： JSR Corporation
发明人： Yasutake Inoue , Junji Kawai , Michinori Nishikawa , Kinji Yamada
IPC分类号： H01L021/31
CPC分类号： H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/3122 , H01L21/316 , Y10T428/1457
摘要： A method of manufacturing an insulating film-forming material comprising dissolving an inorganic polymer compound or an organic polymer compound in an organic solvent having a solubility in water of 100 g/100 cc or less at 20null C., and causing the solution to come in contact with water or an acidic aqueous solution to perform liquid-liquid extraction. The insulating film-forming material has a low metal impurity content and is capable of forming a silica-based film having excellent relative dielectric constant characteristics and low leakage current characteristics.
摘要翻译：一种绝缘膜形成材料的制造方法，其特征在于，将无机高分子化合物或有机高分子化合物溶解在20℃下在水中的溶解度为100g / 100cc以下的有机溶剂中，使溶液达到与水或酸性水溶液接触以进行液 - 液萃取。绝缘膜形成材料具有低的金属杂质含量，并且能够形成具有优异的相对介电常数特性和低泄漏电流特性的二氧化硅基膜。

2. 发明申请

US20020045693A1 Composition for film formation, method of film formation and silica-based film 有权
标题翻译：用于成膜的成分，成膜方法和二氧化硅基膜
公开(公告)号：US20020045693A1
公开(公告)日：2002-04-18
申请号：US09829954
申请日：2001-04-11
申请人： JSR CORPORATION
发明人： Eiji Hayashi , Michinori Nishikawa , Kinji Yamada
IPC分类号： C08K005/04 , C08K003/10
CPC分类号： H01L21/02126 , C08G77/06 , C08G77/08 , C08G77/50 , C09D183/04 , C09D183/14 , H01L21/02282 , H01L21/312 , Y10T428/31663
摘要： A composition for film formation which comprises: (A) a product of hydrolysis and condensation obtained by hydrolyzing and condensing at least one compound selected from the group consisting of (A-1) compounds represented by the following formula (1) RaSi(OR1)4-anullnull(1) (A-2) compounds represented by the following formula (2) Si(OR2)4nullnull(2) and (A-3) compounds represented by the following formula (3) R3b(R4O)3-bSinull(R7)dnullSi(OR5)3-cR6cnullnull(3) (B) at least one member selected from the group consisting of compounds of the metals in Groups IA and IIA of the periodic table; and (C) an organic solvent. A method for film formation using the composition and a silica-based film obtained by the method are also disclosed.
摘要翻译：一种成膜用组合物，其特征在于，含有：（A）水解缩合产生的水解和缩合产物，所述产物通过水解和缩合至少一种选自（A-1）由下式（1）表示的化合物的化合物<段落lvl = 式（2）表示的化合物“（1）式（2）表示的化合物＆lt;＆lt;＆lt; 1＆gt; ＆lt;在线式＆gt; Si（OR2）4（2）＆lt; / in-line-formula＆gt;和（A-3）由下式（3）表示的化合物＆lt;段落lvl =“0” 线性式> R3b（R4O）3-bSi-（R7）d-Si（OR5）3-cR6c（3）在线式>（B）至少一种选自以下的化合物：元素周期表IA和IIA族中的金属; 和（C）有机溶剂。还公开了使用该组合物和通过该方法获得的二氧化硅基膜的成膜方法。

3. 发明申请

US20010012870A1 Composition for film formation and insulating film 有权
标题翻译：用于成膜和绝缘膜的组合物
公开(公告)号：US20010012870A1
公开(公告)日：2001-08-09
申请号：US09771970
申请日：2001-01-30
申请人： JSR CORPORATION
发明人： Michinori Nishikawa , Takashi Okada , Kinji Yamada
IPC分类号： C08L071/12
CPC分类号： C08J5/18 , C08G65/40 , C08G65/4006 , C08G65/4012 , C08J2371/08 , C08L71/00 , H01B3/30 , H05K3/4626
摘要： A composition for film formation comprising a polymer having repeating structural units represented by the formula (1), the structural unit having one or more alkyl groups therein, and an insulating film obtained by applying the composition for film formation to a substrate and heating the coating film.
摘要翻译：一种成膜用组合物，其包含具有式（1）所示的重复结构单元的聚合物，其中具有一个或多个烷基的结构单元和通过将所述成膜用于基材并加热所述涂层而获得的绝缘膜电影。

4. 发明申请

US20020172652A1 Composition for film formation and material for insulating film formation 失效
标题翻译：用于成膜和用于绝缘膜形成的材料的组合物
公开(公告)号：US20020172652A1
公开(公告)日：2002-11-21
申请号：US10102710
申请日：2002-03-22
申请人： JSR CORPORATION
发明人： Noriyasu Shinohara , Kaori Shirato , Michinori Nishikawa , Takashi Okada , Kinji Yamada
IPC分类号： A61K007/06 , A61K007/11 , C08F283/12
CPC分类号： H01L21/02126 , C08G61/02 , C08G61/12 , C08L65/00 , C08L71/123 , C09D171/12 , H01L21/312 , H05K3/4676 , C08L83/00
摘要： A composition for film formation capable of forming a coating film excellent in low dielectric constant characteristics, cracking resistance, modulus of elasticity, and adhesion to substrates and useful as an interlayer insulating film material in semiconductor devices, etc. The composition for film formation contains (A) at least one member selected from an aromatic polyarylene and an aromatic poly (arylene ether), (B) a polyvinylsiloxane, and (C) an organic solvent.
摘要翻译：用于形成能够形成低介电常数特性，耐龟裂性，弹性模量和对基材的粘附性以及用作半导体器件中的层间绝缘膜材料的涂膜的成膜用组合物等。成膜用组合物包含（ A）选自芳族聚亚芳基和芳族聚（亚芳基醚）中的至少一种，（B）聚乙烯基硅氧烷和（C）有机溶剂。

5. 发明申请

US20010055892A1 Composition for film formation, process for producing composition for film formation, method of film formation, and silica-based film 有权
标题翻译：用于成膜的组合物，用于制备成膜用组合物的方法，成膜方法和二氧化硅基膜
公开(公告)号：US20010055892A1
公开(公告)日：2001-12-27
申请号：US09860914
申请日：2001-05-21
申请人： JSR CORPORATION
发明人： Michinori Nishikawa , Kouichi Hasegawa , Eiji Hayashi , Kinji Yamada
IPC分类号： B05D003/02 , C08G077/04
CPC分类号： H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/3122 , H01L21/316 , Y10T428/31663
摘要： A composition for film formation which, when used in the production of semiconductor devices and the like, can give interlayer insulating films which differ little in dielectric constant even when obtained through curing under different conditions and have excellent adhesion to substrates, a process for producing the composition, and a silica-based film obtained from the composition. The composition for film formation comprises: (A) a product of hydrolysis and condensation obtained by hydrolyzing and condensing (A-1) at least one compound selected from the group consisting of compounds represented by the following formula (1), compounds represented by the following formula (2), and compounds represented by the following formula (3), and (A-2) at least one compound represented by the following formula (4), in the presence of a catalyst and water; and (B) an organic solvent.
摘要翻译：一种成膜用组合物，当用于半导体装置等的制造中时，即使在不同条件下固化而获得的介电常数几乎不相等且对基材的附着性优异，也可以制造出组合物和由该组合物获得的二氧化硅基膜。用于成膜的组合物包括：（A）通过水解和缩合获得的水解和缩合产物（A-1）至少一种选自由下式（1）表示的化合物的化合物，由下述式（2）表示的化合物和下述式（3）所示的化合物和（A-2）至少一种下述式（4）所示的化合物在催化剂和水的存在下反应; 和（B）有机溶剂。

6. 发明申请

US20010009936A1 Method of manufacturing material for forming insulating film 失效
标题翻译：制造绝缘膜材料的方法
公开(公告)号：US20010009936A1
公开(公告)日：2001-07-26
申请号：US09760784
申请日：2001-01-17
申请人： JSR Corporation
发明人： Hidenori Suzuki , Katsuyuki Kakinoki , Yoshihisa Nakase , Michinori Nishikawa , Takashi Okada , Kinji Yamada
IPC分类号： C08J003/00 , C08K003/34
CPC分类号： C08G77/34 , H01B3/42 , H01B3/442 , H01B3/46
摘要： A method of manufacturing an insulating film-forming material comprising a curable composition comprisING (A) an inorganic polymer compound or an organic polymer compound and (B) an organic solvent, which comprises treating the curable composition with a zeta potential-producing filter material. Because the curable composition has a very small content of alkali metals and heavy metals, the composition is suitably used for the manufacture of materials for forming insulating films which have a wide variety of applications in the electronic field.
摘要翻译：一种制造绝缘膜形成材料的方法，包括含有（A）无机聚合物化合物或有机高分子化合物的固化性组合物和（B）有机溶剂，其包括用ζ电位产生过滤材料处理可固化组合物。由于可固化组合物的碱金属和重金属含量非常小，所以该组合物适合用于制造在电子领域中具有广泛应用的形成绝缘膜的材料。

7. 发明申请

US20030091838A1 Composition for film formation, method of film formation, and silica-based film 有权
标题翻译：用于成膜的成分，成膜方法和二氧化硅基膜
公开(公告)号：US20030091838A1
公开(公告)日：2003-05-15
申请号：US10269967
申请日：2002-10-15
申请人： JSR CORPORATION
发明人： Eiji Hayashi , Kouichi Hasegawa , Youngsoo Seo , Michinori Nishikawa , Kinji Yamada
IPC分类号： B32B009/04
CPC分类号： H01L21/02126 , C08G77/08 , C08G77/50 , C09D183/04 , C09D183/14 , H01L21/02216 , H01L21/02282 , H01L21/3122 , Y10T428/31663
摘要： A composition for film formation which comprises: (A) a product of hydrolysis and condensation obtained by hydrolyzing and condensing at least one silane compound selected from the group consisting of compounds represented by the formula (1), compounds represented by the formula (2), and compounds represented by the formula (3) in the presence of water and an ammonium compound, and (B) an organic solvent.
摘要翻译：一种成膜用组合物，其特征在于，包括：（A）水解缩合得到的水解和缩合产物，所述产物通过水解和缩合至少一种选自由式（1）表示的化合物，式（2）表示的化合物，，和由式（3）表示的化合物在水和铵化合物的存在下，和（B）有机溶剂。

8. 发明申请

US20020189495A1 Composition for film formation, method of film formation, and silica-based film 失效
标题翻译：用于成膜的成分，成膜方法和二氧化硅基膜
公开(公告)号：US20020189495A1
公开(公告)日：2002-12-19
申请号：US10103996
申请日：2002-03-25
申请人： JSR CORPORATION
发明人： Eiji Hayashi , Michinori Nishikawa , Atsushi Shiota , Kinji Yamada
IPC分类号： C08L001/00 , C08J003/00 , C08K005/24 , C07G001/00 , C08H001/00 , C09K003/00 , B05D003/02
CPC分类号： H01L21/02126 , C09D183/04 , C09D183/14 , H01L21/02216 , H01L21/02282 , H01L21/3122
摘要： A composition for film formation capable of forming a silica-based coating film having low water absorption and dielectric constant of 2.1 or lower and useful as an interlayer insulating film material in semiconductor devices, etc. The composition contains: (A) a product of hydrolysis and condensation obtained by hydrolyzing and condensing at least one silane compound selected from the group consisting of compounds represented by formula (1), compounds represented by formula (2), and compounds represented by formula (3) in the presence of a basic catalyst and water, RaSi(OR1)4-anullnull(1) wherein R represents a hydrogen atom, a fluorine atom, or a monovalent organic group, R1 represents a monovalent organic group, and a is an integer of 1 or 2, Si(OR2)4nullnull(2) wherein R2 represents a monovalent organic group, R3b(R4O)3-bSinull(R7)dnullSi(OR5)3-cR6cnullnull(3) wherein R3 to R6 may be the same or different and each represents a monovalent organic group, b and c may be the same or different and each is a number of 0 to 2, R7 represents an oxygen atom, a phenylene group, or a group represented by null(CH2)nnull, wherein n is an integer of 1 to 6, and d is 0 or 1; (B) a compound compatible with or dispersible in ingredient (A) and having a boiling point or decomposition temperature of from 250 to 450null C.; and (C) an organic solvent.
摘要翻译：用于形成能够形成低吸水性和介电常数为2.1以下并且用作半导体装置中的层间绝缘膜材料的二氧化硅系涂膜的成膜用组合物等。该组合物含有：（A）水解产物和通过水解和缩合在式（1）表示的化合物，式（2）表示的化合物和式（3）表示的化合物中的至少一种硅烷化合物在碱性催化剂存在下水解和缩合得到的缩合物，和水， RaSi（OR1）4-a（1）其中R表示氢原子，氟原子或一价有机基团，R 1表示一价有机基团，a是1或2的整数，＆lt;段落lvl =“0”> in-line-formula> Si（OR2）4（2）其中R 2表示一价有机基团，其中R 1代表一价有机基团，其中R 1表示1价有机基团， l 其中R3至R6可以相同或不同，各自表示一价有机基团，b和c可以相同或不同，各自为0〜2，R7为氧原子，亚苯基或由 - （CH 2）n - 表示的基团，其中n为1至6的整数，d为0或1; （B）与成分（A）相容或分散且沸点或分解温度为250-450℃的化合物; 和（C）有机溶剂。

9. 发明申请

US20020161173A1 Polymer, process for production, composition for film formation containing the same, method of film formation, and insulating film 有权
标题翻译：聚合物，制造方法，含有其的成膜组合物，成膜方法和绝缘膜
公开(公告)号：US20020161173A1
公开(公告)日：2002-10-31
申请号：US10128411
申请日：2002-04-24
申请人： JSR CORPORATION
发明人： Takashi Okada , Noriyasu Sinohara , Kaori Shirato , Masahiko Ebisawa , Michinori Nishikawa , Kinji Yamada
IPC分类号： C08G061/00 , B32B009/04
CPC分类号： C08G61/02 , C08G61/12 , Y10T428/31855
摘要： a composition for film formation which can be cured in a short time period and give a film having a low dielectric constant and excellent in heat resistance, adhesion and cracking resistance, a polymer for use in the composition and a process for producing the polymer. The composition prepared by dissolving the polymer having specific repeating units in a solvent has excellent film-forming properties. The polymer has repeating units represented by the following general formula (1): 1 wherein Z and Y are as defined hereinabove.
摘要翻译：用于成膜的组合物可以在短时间内固化并得到具有低介电常数和耐热性，粘合性和抗龟裂性优异的膜，用于该组合物的聚合物和该聚合物的制备方法。通过将具有特定重复单元的聚合物溶解在溶剂中制备的组合物具有优异的成膜性能。聚合物具有由以下通式（1）表示的重复单元：其中Z和Y如上所定义。

10. 发明申请

US20030077461A1 Stacked film, insulating film and substrate for semiconductor 失效
标题翻译：叠层膜，绝缘膜和半导体基板
公开(公告)号：US20030077461A1
公开(公告)日：2003-04-24
申请号：US10255941
申请日：2002-09-27
申请人： JSR CORPORATION
发明人： Michinori Nishikawa , Manabu Sekiguchi , Matthias Patz , Atsushi Shiota , Kinji Yamada
IPC分类号： B32B009/04
CPC分类号： H01L21/02126 , C08G65/4068 , C09D183/14 , H01L21/312 , Y10T428/31533 , Y10T428/31663 , Y10T428/31667
摘要： A stacked film for semiconductor having superior adhesion to a coating film formed by a CVD process in, for example, semiconductor devices, an insulating film having the stacked film and a substrate for semiconductor using the insulating film are disclosed. The stacked film comprises (A) a film of an organic compound having a carbon content of 60% by weight or more and (B) a film prepared by heating a hydrolytic condensate obtained by hydrolysis and condensation of at least one compound selected from the group consisting of specific compounds represented by the general formulae (51) to (54) described hereinabove.
摘要翻译：公开了一种用于半导体的叠层膜，其具有对例如半导体器件中的CVD工艺形成的涂膜具有优异的粘合性，具有堆叠膜的绝缘膜和使用绝缘膜的半导体衬底。层叠膜包含（A）碳含量为60重量％以上的有机化合物的膜，（B）通过加热通过水解缩合得到的水解缩合物而制备的膜，所述水解缩合物是通过水解缩合得到的，由上述通式（51）至（54）表示的具体化合物组成。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式