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1. 发明授权

US07423306B2 CMOS image sensor devices 有权
标题翻译： CMOS图像传感器设备
公开(公告)号：US07423306B2
公开(公告)日：2008-09-09
申请号：US11527464
申请日：2006-09-27
申请人： J. C. Liu , Tzu-Hsuan Hsu , Chien-Hsien Tseng , Dun-Nian Yaung , Shou-Gwo Wuu
发明人： J. C. Liu , Tzu-Hsuan Hsu , Chien-Hsien Tseng , Dun-Nian Yaung , Shou-Gwo Wuu
IPC分类号： H01L21/00
CPC分类号： H01L27/1463 , H01L27/14609 , H01L27/14627 , H01L27/14632 , H01L27/14645
摘要： A pixel comprises a substrate comprising a first well region formed in a top portion of the substrate, having a first conductivity type. A plurality of shallow trench isolation (STI) structures is formed in the first well region of the substrate, defining a pixel region over the substrate. A second well region is formed in a potion of the first well region of the pixel region, having a second conductivity type opposite to the first conductivity type. A top surface region is formed in a top portion of the second well region, having the first conductivity type. A MOS transistor formed on portions the pixel region, having a pair of source/drain regions formed in the first well region, wherein the source/drain regions are formed of the second conductivity type and one thereof electrically connects the first and well doping regions and the first well region is formed with a depth greater than that of the adjacent STI structure.
摘要翻译：像素包括基板，该基板包括形成在基板顶部的第一阱区域，具有第一导电类型。在衬底的第一阱区域中形成多个浅沟槽隔离（STI）结构，在衬底上限定像素区域。第二阱区形成在像素区的第一阱区的一个部分中，具有与第一导电类型相反的第二导电类型。顶表面区域形成在具有第一导电类型的第二阱区域的顶部。形成在像素区域的部分上的MOS晶体管，其具有形成在第一阱区域中的一对源极/漏极区域，其中源极/漏极区域由第二导电类型形成，并且其中一个电连接第一和阱掺杂区域，第一阱区域的深度大于相邻STI结构的深度。

2. 发明申请

US20070120160A1 Semiconductor Device Having Enhanced Photo Sensitivity and Method for Manufacture Thereof 有权
标题翻译：具有增强光敏性的半导体器件及其制造方法
公开(公告)号：US20070120160A1
公开(公告)日：2007-05-31
申请号：US11627883
申请日：2007-01-26
申请人： Tzu-Hsuan Hsu , Dun-Nian Yaung , Shou-Gwo Wuu , Ho-Ching Chien , Chien-Hsien Tseng , Jeng-Shyan Lin
发明人： Tzu-Hsuan Hsu , Dun-Nian Yaung , Shou-Gwo Wuu , Ho-Ching Chien , Chien-Hsien Tseng , Jeng-Shyan Lin
IPC分类号： H01L31/113
CPC分类号： H01L27/14689 , H01L27/1463
摘要： Provided are a semiconductor device and a method for its manufacture. In one example, the method includes forming an isolation structure having a first refraction index over a sensor embedded in a substrate. A first layer having a second refraction index that is different from the first refraction index is formed over the isolation structure. The first layer is removed from at least a portion of the isolation structure. A second layer having a third refraction index is formed over the isolation structure after the first layer is removed. The third refraction index is substantially similar to the first refraction index.
摘要翻译：提供半导体器件及其制造方法。在一个示例中，该方法包括在嵌入基板中的传感器上形成具有第一折射率的隔离结构。在隔离结构上形成具有与第一折射率不同的第二折射率的第一层。从隔离结构的至少一部分去除第一层。在去除第一层之后，在隔离结构上形成具有第三折射率的第二层。第三折射率基本上类似于第一折射率。

3. 发明授权

US08124495B2 Semiconductor device having enhanced photo sensitivity and method for manufacture thereof 有权
标题翻译：具有增强的光敏度的半导体器件及其制造方法
公开(公告)号：US08124495B2
公开(公告)日：2012-02-28
申请号：US11627883
申请日：2007-01-26
申请人： Tzu-Hsuan Hsu , Dun-Nian Yaung , Shou-Gwo Wuu , Ho-Ching Chien , Chien-Hsien Tseng , Jeng-Shyan Lin
发明人： Tzu-Hsuan Hsu , Dun-Nian Yaung , Shou-Gwo Wuu , Ho-Ching Chien , Chien-Hsien Tseng , Jeng-Shyan Lin
IPC分类号： H01L21/76
CPC分类号： H01L27/14689 , H01L27/1463
摘要： Provided are a semiconductor device and a method for its manufacture. In one example, the method includes forming an isolation structure having a first refraction index over a sensor embedded in a substrate. A first layer having a second refraction index that is different from the first refraction index is formed over the isolation structure. The first layer is removed from at least a portion of the isolation structure. A second layer having a third refraction index is formed over the isolation structure after the first layer is removed. The third refraction index is substantially similar to the first refraction index.
摘要翻译：提供半导体器件及其制造方法。在一个示例中，该方法包括在嵌入基板中的传感器上形成具有第一折射率的隔离结构。在隔离结构上形成具有与第一折射率不同的第二折射率的第一层。从隔离结构的至少一部分去除第一层。在去除第一层之后，在隔离结构上形成具有第三折射率的第二层。第三折射率基本上类似于第一折射率。

4. 发明授权

US07232697B2 Semiconductor device having enhanced photo sensitivity and method for manufacture thereof 有权
标题翻译：具有增强的光敏度的半导体器件及其制造方法
公开(公告)号：US07232697B2
公开(公告)日：2007-06-19
申请号：US10818312
申请日：2004-04-05
申请人： Tzu-Hsuan Hsu , Dun-Nian Yaung , Shou-Gwo Wuu , Ho-Ching Chien , Chien-Hsien Tseng , Jeng-Shyan Lin
发明人： Tzu-Hsuan Hsu , Dun-Nian Yaung , Shou-Gwo Wuu , Ho-Ching Chien , Chien-Hsien Tseng , Jeng-Shyan Lin
IPC分类号： H01L21/339
CPC分类号： H01L27/14689 , H01L27/1463
摘要： Provided are a semiconductor device and a method for its manufacture. In one example, the method includes forming an isolation structure having a first refraction index over a sensor embedded in a substrate. A first layer having a second refraction index that is different from the first refraction index is formed over the isolation structure. The first layer is removed from at least a portion of the isolation structure. A second layer having a third refraction index is formed over the isolation structure after the first layer is removed. The third refraction index is substantially similar to the first refraction index.
摘要翻译：提供半导体器件及其制造方法。在一个示例中，该方法包括在嵌入基板中的传感器上形成具有第一折射率的隔离结构。在隔离结构上形成具有与第一折射率不同的第二折射率的第一层。从隔离结构的至少一部分去除第一层。在去除第一层之后，在隔离结构上形成具有第三折射率的第二层。第三折射率基本上类似于第一折射率。

5. 发明申请

US20080111169A1 CMOS image sensor devices 有权
公开(公告)号：US20080111169A1
公开(公告)日：2008-05-15
申请号：US11527464
申请日：2006-09-27
申请人： J.C. Liu , Tzu-Hsuan Hsu , Chien-Hsien Tseng , Dun-Nian Yaung , Shou-Gwo Wuu
发明人： J.C. Liu , Tzu-Hsuan Hsu , Chien-Hsien Tseng , Dun-Nian Yaung , Shou-Gwo Wuu
IPC分类号： H01L27/146
CPC分类号： H01L27/1463 , H01L27/14609 , H01L27/14627 , H01L27/14632 , H01L27/14645
摘要： A pixel comprises a substrate comprising a first well region formed in a top portion of the substrate, having a first conductivity type. A plurality of shallow trench isolation (STI) structures is formed in the first well region of the substrate, defining a pixel region over the substrate. A second well region is formed in a potion of the first well region of the pixel region, having a second conductivity type opposite to the first conductivity type. A top surface region is formed in a top portion of the second well region, having the first conductivity type. A MOS transistor formed on portions the pixel region, having a pair of source/drain regions formed in the first well region, wherein the source/drain regions are formed of the second conductivity type and one thereof electrically connects the first and well doping regions and the first well region is formed with a depth greater than that of the adjacent STI structure.

6. 发明申请

US20080173963A1 GUARD RING STRUCTURE FOR IMPROVING CROSSTALK OF BACKSIDE ILLUMINATED IMAGE SENSOR 有权
标题翻译：用于改进后置照明图像传感器的CROSSTALK的防护环结构
公开(公告)号：US20080173963A1
公开(公告)日：2008-07-24
申请号：US11626757
申请日：2007-01-24
申请人： Tzu-Hsuan Hsu , Shou-Gwo Wuu , Dun-Nian Yaung
发明人： Tzu-Hsuan Hsu , Shou-Gwo Wuu , Dun-Nian Yaung
IPC分类号： H01L27/14
CPC分类号： H01L27/1463 , H01L27/1464 , H01L27/14683
摘要： The present disclosure provides a backside illuminated semiconductor device. The device includes a substrate having a front surface and a back surface; a plurality of sensor elements formed in the substrate, each of the plurality of sensor elements is designed and configured to receive light directed towards the back surface; and a sensor isolation feature formed in the substrate, and disposed horizontally between two adjacent elements of the plurality of sensor elements, and vertically between the back surface and the front surface.
摘要翻译：本公开提供了背面照明半导体器件。该装置包括具有前表面和后表面的基板; 形成在所述基板中的多个传感器元件，所述多个传感器元件中的每一个被设计和配置成接收朝向所述后表面的光; 以及形成在所述基板中的传感器隔离特征，并且水平地设置在所述多个传感器元件的两个相邻元件之间，并且在所述后表面和所述前表面之间垂直。

7. 发明申请

US20060054939A1 CMOS image sensor 有权
标题翻译： CMOS图像传感器
公开(公告)号：US20060054939A1
公开(公告)日：2006-03-16
申请号：US10980959
申请日：2004-11-04
申请人： Tzu-Hsuan Hsu , Dun-Nian Yaung , Wen-De Wang , Ho-Ching Chien , Shou-Gwo Wuu
发明人： Tzu-Hsuan Hsu , Dun-Nian Yaung , Wen-De Wang , Ho-Ching Chien , Shou-Gwo Wuu
IPC分类号： H01L27/148
CPC分类号： H01L27/14643 , H01L27/14621 , H01L27/14627 , H01L27/14636
摘要： A complementary metal oxide semiconductor field effect transistor (CMOS-FET) image sensor. An active photosensing pixel is formed on a substrate. At least one side of the pixel has a width equal to or less than approximately 3 μm. At least one dielectric layer is disposed on the substrate covering the pixel. A color filter is disposed on the least one dielectric layer. A microlens array is disposed on the color filter of the pixel, and the sum of the thickness of all dielectric layers and the color filter divided by the pixel width is equal to or less than approximately 1.87.
摘要翻译：互补金属氧化物半导体场效应晶体管（CMOS-FET）图像传感器。在基板上形成有源感光像素。像素的至少一侧具有等于或小于约3μm的宽度。在覆盖像素的基板上设置至少一个电介质层。滤色器设置在至少一个电介质层上。微透镜阵列设置在像素的滤色器上，所有电介质层和滤色器的厚度之和除以像素宽度等于或小于约1.87。

8. 发明授权

US07338830B2 Hollow dielectric for image sensor 有权
标题翻译：空心电介质用于图像传感器
公开(公告)号：US07338830B2
公开(公告)日：2008-03-04
申请号：US11271116
申请日：2005-11-10
申请人： Tzu-Hsuan Hsu , Shou-Gwo Wuu , Ho-Ching Chien , Dun-Nian Yaung
发明人： Tzu-Hsuan Hsu , Shou-Gwo Wuu , Ho-Ching Chien , Dun-Nian Yaung
IPC分类号： H01L21/00
CPC分类号： H01L27/14632 , H01L27/1462
摘要： A plurality of apertures is formed in at least one first insulating layer disposed over a sensor formed in a semiconductor substrate. A second insulating layer is disposed over the at least one first insulating layer and the plurality of apertures in the at least one first insulating layer. The apertures form hollow regions in the at least one first insulating layer over the sensor, allowing more light or energy to pass through the at least one first insulating layer to the sensor, and increasing the sensitivity of the sensor.
摘要翻译：在设置在形成于半导体衬底中的传感器上的至少一个第一绝缘层中形成多个孔。第二绝缘层设置在至少一个第一绝缘层和至少一个第一绝缘层中的多个孔之上。所述孔在所述传感器上的所述至少一个第一绝缘层中形成中空区域，允许更多的光或能量穿过所述至少一个第一绝缘层到所述传感器，并且增加所述传感器的灵敏度。

9. 发明申请

US20050199921A1 Hollow dielectric for image sensor 有权
标题翻译：空心电介质用于图像传感器
公开(公告)号：US20050199921A1
公开(公告)日：2005-09-15
申请号：US10799986
申请日：2004-03-12
申请人： Tzu-Hsuan Hsu , Shou-Gwo Wuu , Ho-Ching Chien , Dun-Nian Yaung
发明人： Tzu-Hsuan Hsu , Shou-Gwo Wuu , Ho-Ching Chien , Dun-Nian Yaung
IPC分类号： H01L21/82 , H01L27/146 , H01L31/062
CPC分类号： H01L27/14632 , H01L27/1462
摘要： A plurality of apertures is formed in at least one first insulating layer disposed over a sensor formed in a semiconductor substrate. A second insulating layer is disposed over the at least one first insulating layer and the plurality of apertures in the at least one first insulating layer. The apertures form hollow regions in the at least one first insulating layer over the sensor, allowing more light or energy to pass through the at least one first insulating layer to the sensor, and increasing the sensitivity of the sensor.
摘要翻译：在设置在形成于半导体衬底中的传感器上的至少一个第一绝缘层中形成多个孔。第二绝缘层设置在所述至少一个第一绝缘层和所述至少一个第一绝缘层中的多个孔之上。所述孔在所述传感器上的所述至少一个第一绝缘层中形成中空区域，允许更多的光或能量穿过所述至少一个第一绝缘层到所述传感器，并且增加所述传感器的灵敏度。

10. 发明授权

US07253458B2 CMOS image sensor 有权
标题翻译： CMOS图像传感器
公开(公告)号：US07253458B2
公开(公告)日：2007-08-07
申请号：US10980959
申请日：2004-11-04
申请人： Tzu-Hsuan Hsu , Dun-Nian Yaung , Wen-De Wang , Ho-Ching Chien , Shou-Gwo Wuu
发明人： Tzu-Hsuan Hsu , Dun-Nian Yaung , Wen-De Wang , Ho-Ching Chien , Shou-Gwo Wuu
IPC分类号： H01L27/148
CPC分类号： H01L27/14643 , H01L27/14621 , H01L27/14627 , H01L27/14636
摘要： A complementary metal oxide semiconductor field effect transistor (CMOS-FET) image sensor. An active photosensing pixel is formed on a substrate. At least one side of the pixel has a width equal to or less than approximately 3 μm. At least one dielectric layer is disposed on the substrate covering the pixel. A color filter is disposed on the least one dielectric layer. A microlens array is disposed on the color filter of the pixel, and the sum of the thickness of all dielectric layers and the color filter divided by the pixel width is equal to or less than approximately 1.87.
摘要翻译：互补金属氧化物半导体场效应晶体管（CMOS-FET）图像传感器。在基板上形成有源感光像素。像素的至少一侧具有等于或小于约3μm的宽度。在覆盖像素的基板上设置至少一个电介质层。滤色器设置在至少一个电介质层上。微透镜阵列设置在像素的滤色器上，所有电介质层和滤色器的厚度之和除以像素宽度等于或小于约1.87。

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