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1. 发明授权

US08946799B2 Silicon controlled rectifier with stress-enhanced adjustable trigger voltage 有权
标题翻译：可控硅整流器，具有应力增强可调触发电压
公开(公告)号：US08946799B2
公开(公告)日：2015-02-03
申请号：US13956795
申请日：2013-08-01
申请人： International Business Machines Corporation
发明人： Renata Camillo-Castillo , Erik M. Dahlstrom , Robert J. Gauthier, Jr. , Ephrem G. Gebreselasie , Richard A. Phelps , Yun Shi , Andreas D. Stricker
IPC分类号： H01L21/84 , H01L29/73 , H01L29/66 , H01L29/74 , H01L27/02 , G06F17/50
CPC分类号： H01L29/7315 , G06F17/5063 , H01L27/0262 , H01L29/66393 , H01L29/7436
摘要： Device structures, fabrication methods, operating methods, and design structures for a silicon controlled rectifier. The method includes applying a mechanical stress to a region of a silicon controlled rectifier (SCR) at a level sufficient to modulate a trigger current of the SCR. The device and design structures include a SCR with an anode, a cathode, a first region, and a second region of opposite conductivity type to the first region. The first and second regions of the SCR are disposed in a current-carrying path between the anode and cathode of the SCR. A layer is positioned on a top surface of a semiconductor substrate relative to the first region and configured to cause a mechanical stress in the first region of the SCR at a level sufficient to modulate a trigger current of the SCR.
摘要翻译：可控硅整流器的器件结构，制造方法，操作方法和设计结构。该方法包括以足以调节SCR的触发电流的水平对可控硅整流器（SCR）的区域施加机械应力。装置和设计结构包括具有阳极的SCR，阴极，第一区域和与第一区域相反的导电类型的第二区域。 SCR的第一和第二区域设置在SCR的阳极和阴极之间的通电路径中。层相对于第一区域定位在半导体衬底的顶表面上，并且被配置为在SCR的第一区域中产生一个足以调制SCR的触发电流的电平的机械应力。

2. 发明授权

US10008848B2 Method to protect sensitive devices from electrostatic discharge damage 有权
公开(公告)号：US10008848B2
公开(公告)日：2018-06-26
申请号：US14635005
申请日：2015-03-02
申请人： International Business Machines Corporation
发明人： Ephrem G. Gebreselasie , Icko E. T. Iben , Alain Loiseau
IPC分类号： H02H9/04
CPC分类号： H02H9/041
摘要： ESD protection circuitry that includes one, or more, of the following features, characteristics and/or advantages: (i) use of different “diode types” (for example, Schottky type, PN type, p-type diode-connected field-effect transistor (FET) type, NFET type)) in a series-connected diode set (connected in series with respect to a device-under-protection) and a parallel-connected diode set (connected in parallel with respect to a device-under-protection and the series-connected diode set); (ii) a FET is connected in series with a target device such that the FET's gate can be turned on during normal operation and the FET's gate is resistively coupled to the FET's source; and/or (iii) two FETs are connected in series with a target device such both FETs gates can be turned on during normal operation, one FET's gate is resistively coupled to its source, and the other FET's gate is electrically coupled to its drain.

3. 发明申请

US20160261109A1 METHOD TO PROTECT SENSITIVE DEVICES FROM ELECTROSTATIC DISCHARGE DAMAGE 有权
标题翻译：从静电放电损伤中保护敏感器件的方法
公开(公告)号：US20160261109A1
公开(公告)日：2016-09-08
申请号：US14635005
申请日：2015-03-02
申请人： International Business Machines Corporation
发明人： Ephrem G. Gebreselasie , Icko E. T. Iben , Alain Loiseau
IPC分类号： H02H9/04
CPC分类号： H02H9/041
摘要： ESD protection circuitry that includes one, or more, of the following features, characteristics and/or advantages: (i) use of different “diode types” (for example, Schottky type, PN type, p-type diode-connected field-effect transistor (FET) type, NFET type)) in a series-connected diode set (connected in series with respect to a device-under-protection) and a parallel-connected diode set (connected in parallel with respect to a device-under-protection and the series-connected diode set); (ii) a FET is connected in series with a target device such that the FET's gate can be turned on during normal operation and the FET's gate is resistively coupled to the FET's source; and/or (iii) two FETs are connected in series with a target device such both FETs gates can be turned on during normal operation, one FET's gate is resistively coupled to its source, and the other FET's gate is electrically coupled to its drain.
摘要翻译： ESD保护电路包括以下特征中的一个或多个特性和/或优点：（i）使用不同的“二极管类型”（例如，肖特基型，PN型，p型二极管连接的场效应晶体管（FET）型，NFET型））串联连接的二极管组（相对于器件不足保护而串联连接）和并联连接的二极管组（相对于器件不足的并联连接）保护和串联二极管组）; （ii）FET与目标器件串联连接，使得在正常工作期间FET的栅极可以导通，并且FET的栅极电阻耦合到FET的源极; 和/或（iii）两个FET与目标器件串联连接，这两个FET门在正常工作期间可以导通，一个FET的栅极电阻耦合到其源极，而另一个FET的栅极电耦合到其漏极。

4. 发明授权

US09601139B2 Electrostatic discharge protection for a magnetoresistive sensor 有权
公开(公告)号：US09601139B2
公开(公告)日：2017-03-21
申请号：US15009970
申请日：2016-01-29
申请人： International Business Machines Corporation
发明人： Ephrem G. Gebreselasie , Icko E. T. Iben , Alain Loiseau , Andreas D. Stricker
IPC分类号： G11B5/39 , H01L27/02 , G11B5/40 , G01R33/00 , G01R33/09 , G06F17/50 , G11B5/60 , G11B5/09
CPC分类号： G11B5/3938 , G01R33/0029 , G01R33/0052 , G01R33/0076 , G01R33/09 , G06F17/5068 , G11B5/09 , G11B5/39 , G11B5/40 , G11B5/6094 , H01L27/0255 , H01L27/0266
摘要： A magneto-resistive (MR) sensor protection circuit is disclosed, for the protection of an MR sensor. The MR sensor may have a safe operating voltage range, a normal operating voltage range within the safe operating voltage range, and two terminals coupled to a read channel circuit, including a positive terminal and a negative terminal. The MR sensor protection circuit may have positive and negative protection threshold voltage ranges. The MR sensor protection circuit may also have a plurality of N-channel field-effect transistors (NFETs) that are coupled to the positive terminal and to the negative terminal, and configured to, in response to a voltage between the two terminals being within either the positive or the negative protection threshold voltage range, limit the voltage between the terminals by shunting current between the positive terminal and the negative terminal.

5. 发明授权

US09279862B2 Electrostatic discharge protection for a magnetoresistive sensor 有权
标题翻译：磁阻传感器的静电放电保护
公开(公告)号：US09279862B2
公开(公告)日：2016-03-08
申请号：US14529326
申请日：2014-10-31
申请人： International Business Machines Corporation
发明人： Ephrem G. Gebreselasie , Icko E. T. Iben , Alain Loiseau , Andreas D. Stricker
IPC分类号： G11B5/39 , G01R33/00 , H01L27/02 , G11B5/40 , G01R33/09 , G06F17/50 , G11B5/60
CPC分类号： G11B5/3938 , G01R33/0029 , G01R33/0052 , G01R33/0076 , G01R33/09 , G06F17/5068 , G11B5/09 , G11B5/39 , G11B5/40 , G11B5/6094 , H01L27/0255 , H01L27/0266
摘要： A method of designing, for a magneto-resistive (MR) sensor, a protection circuit having a first and a second N-channel field-effect transistor (NFET) and at least one positive-negative (PN) diode is disclosed. The method may include determining a safe operating voltage range for the MR sensor and determining, within the safe operating voltage range, a normal operating voltage range for the MR sensor. The method may also include determining a protection threshold voltage range outside of the normal operating voltage range and within the safe operating voltage range of the MR sensor. The method may also include selecting device parameters to configure the first and second NFETs and the at least one PN diode to, in response to a voltage applied to the MR sensor being within a protection threshold voltage range, limit, by shunting current, the voltage applied to the MR sensor.
摘要翻译：公开了一种用于磁阻（MR）传感器的具有第一和第二N沟道场效应晶体管（NFET）和至少一个正负极（PN）二极管的保护电路的方法。该方法可以包括确定MR传感器的安全工作电压范围，并在安全工作电压范围内确定MR传感器的正常工作电压范围。该方法还可以包括确定在正常工作电压范围之外且在MR传感器的安全工作电压范围内的保护阈值电压范围。该方法还可以包括选择器件参数以配置第一和第二NFET和至少一个PN二极管，以响应于施加到MR传感器的电压处于保护阈值电压范围内，通过分流电流来限制电压应用于MR传感器。

6. 发明授权

US09034712B2 Stress enhanced LDMOS transistor to minimize on-resistance and maintain high breakdown voltage 有权
标题翻译：应力增强LDMOS晶体管，以最小化导通电阻并保持高击穿电压
公开(公告)号：US09034712B2
公开(公告)日：2015-05-19
申请号：US14044163
申请日：2013-10-02
申请人： International Business Machines Corporation
发明人： Renata Camillo-Castillo , Erik M. Dahlstrom , Robert J. Gauthier, Jr. , Ephrem G. Gebreselasie , Richard A. Phelps , Jed H. Rankin , Yun Shi
IPC分类号： H01L21/02 , H01L29/66 , H01L29/78 , H01L29/06 , H01L29/10
CPC分类号： H01L29/66492 , H01L29/0653 , H01L29/1045 , H01L29/66659 , H01L29/66689 , H01L29/7816 , H01L29/7835 , H01L29/7843
摘要： A lateral diffused metal-oxide-semiconductor field effect transistor (LDMOS transistor) employs a stress layer that enhances carrier mobility (i.e., on-current) while also maintaining a high breakdown voltage for the device. High breakdown voltage is maintained, because an increase in doping concentration of the drift region is minimized. A well region and a drift region are formed in the substrate adjacent to one another. A first shallow trench isolation (STI) region is formed on and adjacent to the well region, and a second STI region is formed on and adjacent to the drift region. A stress layer is deposited over the LDMOS transistor and in the second STI region, which propagates compressive or tensile stress into the drift region, depending on the polarity of the stress layer. A portion of the stress layer can be removed over the gate to change the polarity of stress in the inversion region below the gate.
摘要翻译：横向扩散金属氧化物半导体场效应晶体管（LDMOS晶体管）采用增强载流子迁移率（即导通电流）的应力层，同时还保持器件的高击穿电压。由于漂移区域的掺杂浓度的增加被最小化，因此保持高的击穿电压。在相邻的衬底中形成阱区和漂移区。第一浅沟槽隔离（STI）区域形成在阱区域上并与阱区域相邻，并且第二STI区域形成在漂移区域上并与漂移区域相邻。应力层沉积在LDMOS晶体管和第二STI区域中，第二STI区域根据应力层的极性将压缩或拉伸应力传播到漂移区域。应力层的一部分可以在栅极上去除以改变栅极下方的反转区域中的应力极性。

7. 发明授权

US08908334B1 Electrostatic discharge protection for a magnetoresistive sensor 有权
标题翻译：磁阻传感器的静电放电保护
公开(公告)号：US08908334B1
公开(公告)日：2014-12-09
申请号：US14073951
申请日：2013-11-07
申请人： International Business Machines Corporation
发明人： Ephrem G. Gebreselasie , Icko E. T. Iben , Alain Loiseau , Andreas D. Stricker
IPC分类号： G11B5/33 , G11B5/39 , G11B5/40
CPC分类号： G11B5/3938 , G01R33/0029 , G01R33/0052 , G01R33/0076 , G01R33/09 , G06F17/5068 , G11B5/09 , G11B5/39 , G11B5/40 , G11B5/6094 , H01L27/0255 , H01L27/0266
摘要： A magneto-resistive (MR) sensor protection circuit is disclosed, for the protection of an MR sensor. The MR sensor may have a safe operating voltage range, a normal operating voltage range within the safe operating voltage range, and two terminals coupled to a read channel circuit, including a positive terminal and a negative terminal. The MR sensor protection circuit may have positive and negative protection threshold voltage ranges. The MR sensor protection circuit may also have a plurality of N-channel field-effect transistors (NFETs) that are coupled to the positive terminal and to the negative terminal, and configured to, in response to a voltage between the two terminals being within either the positive or the negative protection threshold voltage range, limit the voltage between the terminals by shunting current between the positive terminal and the negative terminal.
摘要翻译：公开了用于保护MR传感器的磁阻（MR）传感器保护电路。 MR传感器可以具有安全工作电压范围，安全工作电压范围内的正常工作电压范围，以及耦合到读通道电路的两个端子，包括正端子和负端子。 MR传感器保护电路可以具有正和负保护阈值电压范围。 MR传感器保护电路还可以具有多个N沟道场效应晶体管（NFET），其耦合到正极端子和负极端子，并且被配置为响应于两个端子之间的电压在任一个正或负保护阈值电压范围，通过正极和负极之间的分流电流来限制端子之间的电压。

8. 发明申请

US20160148628A1 ELECTROSTATIC DISCHARGE PROTECTION FOR A MAGNETORESISTIVE SENSOR 有权
标题翻译：静电放电保护用于磁传感器
公开(公告)号：US20160148628A1
公开(公告)日：2016-05-26
申请号：US15009970
申请日：2016-01-29
申请人： International Business Machines Corporation
发明人： Ephrem G. Gebreselasie , Icko E. T. Iben , Alain Loiseau , Andreas D. Stricker
IPC分类号： G11B5/39 , G11B5/09 , G01R33/00
CPC分类号： G11B5/3938 , G01R33/0029 , G01R33/0052 , G01R33/0076 , G01R33/09 , G06F17/5068 , G11B5/09 , G11B5/39 , G11B5/40 , G11B5/6094 , H01L27/0255 , H01L27/0266
摘要： A magneto-resistive (MR) sensor protection circuit is disclosed, for the protection of an MR sensor. The MR sensor may have a safe operating voltage range, a normal operating voltage range within the safe operating voltage range, and two terminals coupled to a read channel circuit, including a positive terminal and a negative terminal. The MR sensor protection circuit may have positive and negative protection threshold voltage ranges. The MR sensor protection circuit may also have a plurality of N-channel field-effect transistors (NFETs) that are coupled to the positive terminal and to the negative terminal, and configured to, in response to a voltage between the two terminals being within either the positive or the negative protection threshold voltage range, limit the voltage between the terminals by shunting current between the positive terminal and the negative terminal.
摘要翻译：公开了用于保护MR传感器的磁阻（MR）传感器保护电路。 MR传感器可以具有安全工作电压范围，安全工作电压范围内的正常工作电压范围，以及耦合到读通道电路的两个端子，包括正端子和负端子。 MR传感器保护电路可以具有正和负保护阈值电压范围。 MR传感器保护电路还可以具有多个N沟道场效应晶体管（NFET），其耦合到正极端子和负极端子，并且被配置为响应于两个端子之间的电压在任一个正或负保护阈值电压范围，通过正极和负极之间的分流电流来限制端子之间的电压。

9. 发明申请

US20130313607A1 Silicon Controlled Rectifier With Stress-Enhanced Adjustable Trigger Voltage 有权
标题翻译：具有应力增强可调触发电压的硅控整流器
公开(公告)号：US20130313607A1
公开(公告)日：2013-11-28
申请号：US13956795
申请日：2013-08-01
申请人： International Business Machines Corporation
发明人： Renata Camillo-Castillo , Erik M. Dahlstrom , Robert J. Gauthier, JR. , Ephrem G. Gebreselasie , Richard A. Phelps , Yun Shi , Andreas D. Stricker
IPC分类号： H01L29/73
CPC分类号： H01L29/7315 , G06F17/5063 , H01L27/0262 , H01L29/66393 , H01L29/7436
摘要： Device structures, fabrication methods, operating methods, and design structures for a silicon controlled rectifier. The method includes applying a mechanical stress to a region of a silicon controlled rectifier (SCR) at a level sufficient to modulate a trigger current of the SCR. The device and design structures include a SCR with an anode, a cathode, a first region, and a second region of opposite conductivity type to the first region. The first and second regions of the SCR are disposed in a current-carrying path between the anode and cathode of the SCR. A layer is positioned on a top surface of a semiconductor substrate relative to the first region and configured to cause a mechanical stress in the first region of the SCR at a level sufficient to modulate a trigger current of the SCR.
摘要翻译：可控硅整流器的器件结构，制造方法，操作方法和设计结构。该方法包括以足以调节SCR的触发电流的水平对可控硅整流器（SCR）的区域施加机械应力。装置和设计结构包括具有阳极的SCR，阴极，第一区域和与第一区域相反的导电类型的第二区域。 SCR的第一和第二区域设置在SCR的阳极和阴极之间的通电路径中。层相对于第一区域定位在半导体衬底的顶表面上，并且被配置为在SCR的第一区域中产生一个足以调节SCR的触发电流的电平的机械应力。

10. 发明申请

US20150123655A1 ELECTROSTATIC DISCHARGE PROTECTION FOR A MAGNETORESISTIVE SENSOR 有权
标题翻译：静电放电保护用于磁传感器
公开(公告)号：US20150123655A1
公开(公告)日：2015-05-07
申请号：US14529326
申请日：2014-10-31
申请人： International Business Machines Corporation
发明人： Ephrem G. Gebreselasie , Icko E. T. Iben , Alain Loiseau , Andreas D. Stricker
IPC分类号： G01R33/00 , G06F17/50 , G01R33/09
CPC分类号： G11B5/3938 , G01R33/0029 , G01R33/0052 , G01R33/0076 , G01R33/09 , G06F17/5068 , G11B5/09 , G11B5/39 , G11B5/40 , G11B5/6094 , H01L27/0255 , H01L27/0266
摘要： A method of designing, for a magneto-resistive (MR) sensor, a protection circuit having a first and a second N-channel field-effect transistor (NFET) and at least one positive-negative (PN) diode is disclosed. The method may include determining a safe operating voltage range for the MR sensor and determining, within the safe operating voltage range, a normal operating voltage range for the MR sensor. The method may also include determining a protection threshold voltage range outside of the normal operating voltage range and within the safe operating voltage range of the MR sensor. The method may also include selecting device parameters to configure the first and second NFETs and the at least one PN diode to, in response to a voltage applied to the MR sensor being within a protection threshold voltage range, limit, by shunting current, the voltage applied to the MR sensor.
摘要翻译：公开了一种用于磁阻（MR）传感器的具有第一和第二N沟道场效应晶体管（NFET）和至少一个正负极（PN）二极管的保护电路的方法。该方法可以包括确定MR传感器的安全工作电压范围，并在安全工作电压范围内确定MR传感器的正常工作电压范围。该方法还可以包括确定在正常工作电压范围之外且在MR传感器的安全工作电压范围内的保护阈值电压范围。该方法还可以包括选择器件参数以配置第一和第二NFET和至少一个PN二极管，以响应于施加到MR传感器的电压处于保护阈值电压范围内，通过分流电流来限制电压应用于MR传感器。

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