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    • 1. 发明授权
    • Thin film transistor substrate and display apparatus
    • 薄膜晶体管基板和显示装置
    • US09263475B2
    • 2016-02-16
    • US14140427
    • 2013-12-24
    • InnoLux Corporation
    • Chung-Yi WangYao-Lien Hsieh
    • H01L27/12H01L29/417
    • H01L27/124H01L27/1222H01L29/41733
    • A thin film transistor (TFT) substrate comprises a substrate, a plurality of pixel electrodes, a gate layer, an active layer, a first source layer and a second source layer, and a drain layer. The pixel electrodes are disposed on the substrate. The gate layer is disposed on the substrate. The active layer is disposed corresponding to the gate layer. The first source layer and the second source layer contact the active layer respectively. The drain layer contacts the active layer and is electrically coupled to one of the pixel electrodes. The gate layer, the active layer, the first source layer and the drain layer constitute a first transistor. The gate layer, the active layer, the second source layer and the drain layer constitute a second transistor. When the first and second transistors are disabled, the first and second source layers are electrically isolated from each other.
    • 薄膜晶体管(TFT)基板包括基板,多个像素电极,栅极层,有源层,第一源极层和第二源极层以及漏极层。 像素电极设置在基板上。 栅极层设置在基板上。 有源层对应于栅极层设置。 第一源层和第二源层分别接触有源层。 漏极层接触有源层并电耦合到像素电极之一。 栅极层,有源层,第一源极层和漏极层构成第一晶体管。 栅极层,有源层,第二源极层和漏极层构成第二晶体管。 当禁用第一和第二晶体管时,第一和第二源极彼此电隔离。