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    • 3. 发明申请
    • ELECTROSTATIC CHUCK STRUCTURE FOR SEMICONDUCTOR MANUFACTURING APPARATUS
    • 用于半导体制造设备的静电结构结构
    • US20080285204A1
    • 2008-11-20
    • US12122496
    • 2008-05-16
    • In Jun KIM
    • In Jun KIM
    • H01L21/687
    • H01L21/683Y10T279/23
    • An electrostatic chuck structure according to example embodiments of the present invention may include at least one specific region of a conductor having a thickness relatively smaller than those of other regions, at least one specific region of a dielectric having a thickness relatively larger than those of other regions, or at least one specific region of a conductor having a thickness relatively smaller than those of other regions and at least one specific region of a dielectric having a thickness relatively larger than those of other regions. Therefore, etching rate and CD uniformity can be improved during a semiconductor manufacturing process.
    • 根据本发明的示例性实施例的静电卡盘结构可以包括具有比其他区域的厚度相对更小的厚度的导体的至少一个特定区域,电介质的至少一个特定区域具有比其他区域的厚度更大的厚度 区域,或导体的至少一个特定区域,其厚度比其他区域的厚度相对更小,并且电介质的至少一个特定区域具有比其它区域的厚度更大的厚度。 因此,在半导体制造过程中可以提高蚀刻速率和CD均匀性。