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    • 2. 发明授权
    • Programmable memory matrix employing voltage-variable resistors
    • 采用电压可变电阻的可编程存储矩阵
    • US5070383A
    • 1991-12-03
    • US295274
    • 1989-01-10
    • Alexander B. SinarLevy GerzbergYosef Y. ShachamIlan A. BlechEric R. Sirkin
    • Alexander B. SinarLevy GerzbergYosef Y. ShachamIlan A. BlechEric R. Sirkin
    • H01L23/525H01L27/102
    • H01L27/1021H01L23/5252H01L2924/0002Y10S257/91Y10S257/926
    • A memory matrix comprises a plurality of word lines, a plurality of bit lines, and a stacked diode and voltage-variable resistor structure interconnecting bit lines to word lines. The stacked diode and voltage-variable resistor structure includes a doped region in a semiconductor substrate defining a work line, a doped polycrystalline silicon layer over said word line and forming a p-n junction therewith, and an amorphized region in the doped polycrystalline silicon layer having increased resistance over the non-amorphized portion of the doped polycrystalline silicon layer. A contact is made to the amorphized polycrystalline silicon material which preferably includes a titanium-tungsten barrier layer and an aluminum layer over the barrier layer. To improve the breakdown voltage of the diode structure, a region of opposite conductivity type is formed in the word line under the doped polycrystalline silicon layer either by out-diffusion of dopants from the polycrystalline silicon layer or by the implantation of dopant ions through the polycrystalline silicon layer into the word line.
    • 存储矩阵包括多个字线,多个位线以及将位线互连到字线的堆叠二极管和电压可变电阻器结构。 层叠二极管和可变电压结构包括在限定工作线的半导体衬底中的掺杂区域,在所述字线上方形成掺杂多晶硅层并与其形成pn结,掺杂多晶硅层中的非晶化区域具有增加的 掺杂多晶硅层非非晶化部分的电阻。 对非晶化多晶硅材料进行接触,其优选在阻挡层上包括钛 - 钨阻挡层和铝层。 为了提高二极管结构的击穿电压,在掺杂多晶硅层下面的字线中形成相反导电类型的区域,通过掺杂剂从多晶硅层的扩散或通过掺杂剂离子注入多晶硅 硅层进入字线。
    • 7. 发明申请
    • Method and system to control IVR-IVR dialogue sessions
    • IVR-IVR对话会话的方法和系统
    • US20080232560A1
    • 2008-09-25
    • US11725341
    • 2007-03-19
    • Eric R. Sirkin
    • Eric R. Sirkin
    • H04M11/00
    • H04M3/493
    • The present invention relates to controlling progress of a dialogue session. The dialogue session is initiated by a calling Interactive Voice Response (IVR) either with a called IVR or with a called Voice Mail System (VMS). Various progress detectors are provided at the calling IVR to detect the progress at one or more steps of the dialogue session. Further, appropriate actions are executed based on the detected progress, for controlling the progress of the dialogue session. The detected progress is reported to a master application connected to the calling IVR. The master application controls the dialogue session based on the reported progress.
    • 本发明涉及控制对话会话的进展。 对话会话由呼叫的交互式语音应答(IVR)发起,或者使用被叫IVR或被叫的语音信箱系统(VMS)。 在呼叫IVR处提供各种进度检测器来检测对话会话的一个或多个步骤的进展。 此外,基于检测到的进度来执行适当的动作,以控制对话会话的进行。 检测到的进度报告给连接到主叫IVR的主应用程序。 主应用程序根据报告的进度控制对话会话。