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    • 1. 发明授权
    • Imaging devices comprising photovoltaic detector elements
    • 包括光电探测器元件的成像装置
    • US4833515A
    • 1989-05-23
    • US907711
    • 1986-09-15
    • Ian M. Baker
    • Ian M. Baker
    • H01L27/14H01L27/146H04N5/33H04N5/335H04N5/359H04N5/3745
    • H04N5/3745H01L27/14643H01L27/14649H01L27/14654H04N5/335H04N5/3592
    • In an imaging device, photocurrent generated by photovoltaic detector elements (1), e.g. cadmium mercury telluride photodiodes, is integrated in resettable capacitors (2), and an output signal (S) is derived by reading the potential of the capacitor (2) at the end of its integration period, e.g. using a source-follower MOST (3). In accordance with the invention, blooming-protection means (11,48,12) is coupled to each capacitor (2) to inhibit forward-biasing of the detector elements (1) and inversion of the capacitor potential when the capacitor (2) becomes fully discharged by excessive photocurrent. The blooming-protection means comprises a further gate (11) which has substantially the same threshold voltage as the injection gate (10) via which the photocurrent is injected into the capacitor (2). The further gate (11) which is connected at substantially the same control potential as the injection gate (10), is most conveniently formed together with the injection gate (10) as alternate integral parts of a common gate stripe (37) extending at one side of the capacitors (2). When a capacitor (2) becomes fully discharged, the further gate (11) couples it to a source (12) which supplies current to the capacitor (2) to stabilize the potential of both the capacitor (2) and its detector element (1) and so to protect against signal blooming.
    • 在成像装置中,由光电检测器元件(1)产生的光电流,例如, 镉汞碲化镓光电二极管集成在可复位电容器(2)中,并且通过在其积分周期结束时读取电容器(2)的电位,例如,可以得到输出信号(S)。 使用源极跟随器MOST(3)。 根据本发明,防雾保护装置(11,48,12)耦合到每个电容器(2),以阻止检测器元件(1)的正向偏置和当电容器(2)变为 通过过多的光电流完全放电。 防霜保护装置包括另外的栅极(11),其具有与注入栅极(10)基本相同的阈值电压,通过该栅极将光电流注入到电容器(2)中。 以与喷射门(10)基本相同的控制电位连接的另一个门(11)最方便地与喷射门(10)一起形成为一个共同的栅条(37)的一个整体部分 侧电容器(2)。 当电容器(2)完全放电时,另一栅极(11)将其耦合到向电容器(2)提供电流的源极(12),以稳定电容器(2)和其检测器元件(1)的电位 ),从而防止信号闪亮。
    • 4. 发明授权
    • Infrared detector devices
    • 红外探测器设备
    • US5239179A
    • 1993-08-24
    • US764665
    • 1991-09-24
    • Ian M. Baker
    • Ian M. Baker
    • H01L27/14G01J5/08H01L25/04H01L27/146H01L31/10
    • H01L25/042H01L27/14627H01L27/1465G01J5/08H01L2924/0002H01L2924/3011
    • In an infrared detector device for viewing an object or scene at more than one wavelength, the detector elements (10 and 20) are optimized to have appropriately different infrared responses by being formed in accordance with the invention in different levels (1 and 2) of different material on a substrate (3). Infrared concentrators (55) such as immersion lenses, light-pipes and/or reflectors collect incident radiation (50) over an area larger than the active portion of the associated detector element (10 and/or 20) and concentrate the radiation (50) onto the active portions. The arrangement adopted in accordance with the invention provides adequate space for at least one connection (15) of each upper-level detector element (10) to extend to the substrate (3) through an area of the lower level (2) which is located between the lower-level active portions on which the radiation (50) is concentrated by the associated concentrators (55). This upper-level connection (15) may extend via an island (28) separated from the active portions ( 22,23) of the lower level (2) by a gap (40), or it may extend on a side-wall of the lower-level detector element (20) when this side-wall is insulated or separated by a p-n junction from the active portions of the detector element (20). The different-response elements (10 and 20) may be arranged one above the other or one between the others when viewed in plan view.
    • 5. 发明授权
    • Imaging devices comprising photodetector elements
    • 成像设备包括光检测器元件
    • US4845540A
    • 1989-07-04
    • US907691
    • 1986-09-15
    • Ian M. BakerRaymond E. J. King
    • Ian M. BakerRaymond E. J. King
    • H01L27/146H04N5/33H04N5/3745
    • H01L27/14643H01L27/14649H01L27/14654H04N3/1518
    • In an imaging device, photocurrent generated by detector elements (1), e.g. cadmium mercury telluride photodiodes, may be integrated in resettable capacitors (2), and an output signal (S) may be derived by reading the potential of the capacitor (2) at the end of its integration period, e.g. using a source-follower MOST (3). In accordance with the invention first and second capacitors (2a and 2b) are switchably coupled in alternate parallel arms between each detector element (1) and the voltage-reading means (3), by means of an arrangement of input gates (8a and 8b) and output gates (9a and 9b). Since one of the first and second capacitors (2a or 2b) can be coupled to the detector element (1) while the other (2b or 2a) is coupled to the voltage-reading means (3), each detector element (1) can be switched from one to the other so as to be operated the whole time for photodetection without its signal being lost (i.e. not integrated) when reading the previous output signal from that detector element (1). This is particularly useful for coupling a row of storage capacitors via a 2-d switching array to a 2-d array of infrared detector elements (1). A similar arrangement of alternately-switchable first and second capacitors (2a and 2b) may be used for visible light imaging, and a modified arrangement may used with a CCD signal processing circuit.
    • 在成像装置中,由检测器元件(1)产生的光电流,例如, 镉汞镉光电二极管可以集成在可复位电容器(2)中,并且可以通过在其积分周期结束时读取电容器(2)的电位,例如,可以导出输出信号(S) 使用源极跟随器MOST(3)。 根据本发明,通过输入门(8a和8b)的布置,第一和第二电容器(2a和2b)可交换地并联在每个检测器元件(1)和电压读取装置(3)之间, )和输出门(9a和9b)。 由于第一和第二电容器(2a或2b)中的一个可以耦合到检测器元件(1),而另一个(2b或2a)耦合到电压读取装置(3),每个检测器元件(1)可以 从一个切换到另一个,以便在读取来自该检测器元件(1)的先前输出信号时,在整个时间内对其进行光电检测,而不会丢失信号(即,未集成)。 这对于通过2-d开关阵列将一行存储电容器耦合到2-d阵列的红外检测器元件(1)是特别有用的。 可交替切换的第一和第二电容器(2a和2b)的类似布置可以用于可见光成像,并且修改的布置可以与CCD信号处理电路一起使用。
    • 6. 发明授权
    • Infra-red radiation imaging device arrangements
    • 红外辐射成像装置安排
    • US5155362A
    • 1992-10-13
    • US510179
    • 1983-06-24
    • Ian M. Baker
    • Ian M. Baker
    • H01L27/148
    • H01L27/14875H01L2924/0002
    • An imaging device arrangement comprises infra-red radiation detector elements (10) and signal-processing circuitry including at least one charge-transfer line (30). The detector elements (10) are preferably cadmium mercury telluride photodiodes formed in a common body or body portion which is secured to a substrate (e.g. of silicon) comprising the charge-transfer line (30). Each detector element (10) is connected between an input connection (2,3) of the charge-transfer line (30) and a common electrical connection (4). At least one storage electrode (62) and at least one subtraction gate (63) are present at each input connection (2,3) for subtracting at least one portion (77) of the charge-signal so that only a portion (78) of the charge-signal from each detector element (10) is transferred along the charge-transfer line (30). The substracted charge (77) is drained away via the radiation detector elements (10) by means of a pulse generator (50) or other voltage switching means which is connected to the common electrical connection (4) to switch the common voltage applied to the detector elements (10). A compact structure with fast draining at each input connection (2,3) is obtained. The pulse generator (50) can be formed with other pulse generators of the at least one charge-transfer line (30) in a peripheral area of the circuit substrate.
    • 成像装置装置包括红外辐射检测器元件(10)和包括至少一个电荷传输线(30)的信号处理电路。 检测器元件(10)优选地形成在共同体或体部分中的碲化汞镉光电二极管,其被固定到包括电荷传输线(30)的衬底(例如硅)上。 每个检测器元件(10)连接在电荷传输线(30)的输入连接(2,3)和公共电连接(4)之间。 在每个输入连接(2,3)处存在至少一个存储电极(62)和至少一个减法门(63),用于减去电荷信号的至少一部分(77),使得仅一部分(78) 来自每个检测器元件(10)的电荷信号被沿着电荷传输线(30)传送。 通过脉冲发生器(50)或连接到公共电连接(4)的其它电压切换装置,通过辐射检测器元件(10)将减法电荷(77)排出,以将施加到 检测器元件(10)。 获得在每个输入连接(2,3)处具有快速排水的紧凑结构。 脉冲发生器(50)可以与电路基板的外围区域中的至少一个电荷传输线(30)的其它脉冲发生器形成。
    • 7. 发明授权
    • Method of manufacturing an infrared radiation imaging device
    • 制造红外辐射成像装置的方法
    • US4559695A
    • 1985-12-24
    • US692258
    • 1985-01-17
    • Ian M. Baker
    • Ian M. Baker
    • H01L27/148H01L31/18
    • H01L27/14881H01L27/14696H01L27/14856
    • An array of photovoltaic infrared radiation detector elements are formed in a body of infrared sensitive material, e.g. of cadmium mercury telluride. The body is present on a circuit substrate, which may comprise a silicon CCD for processing signals from the detector elements. An array of regions of a first conductivity type which form the p-n junctions of each detector element with an adjacent body part of opposite conductivity type, extend through the thickness of the body at side-walls of an array of apertures. Each aperture is associated with a detector element and is preferably formed by ion etching. These regions of the first conductivity type are electrically connected to substrate conductors in a simple and reliable manner by a metallization layer in the apertures, without rendering a significant area of the detector insensitive to radiation imaged onto the upper surface of the body. At least the back surface of the detector body (11) has a passivating layer over the area around and between the apertures, to enhance detector element performance. This back surface is secured to the circuit substrate by a layer of electrically insulating adhesive. The main body part is connected to a substrate conductor by a metallization at a surface portion which is outside of the area of the back surface and which is between the apertures. The resulting device is a closely-packed array of high performance detector elements on a circuit substrate. The spacing between adjacent apertures is 100 microns or less.
    • 一组光电红外辐射探测器元件形成在红外敏感材料的主体中,例如 的碲化汞镉。 身体存在于电路基板上,电路基板可以包括用于处理来自检测器元件的信号的硅CCD。 形成具有相反导电类型的相邻主体部分的每个检测器元件的p-n结的第一导电类型的区域的阵列延伸穿过孔阵列的侧壁处的主体的厚度。 每个孔与检测器元件相关联,并且优选地通过离子蚀刻形成。 第一导电类型的这些区域以简单和可靠的方式通过孔中的金属化层电连接到衬底导体,而不会使检测器的显着区域对于成像到身体的上表面上的辐射不敏感。 至少检测器主体(11)的后表面在孔周围和区域之间的区域上具有钝化层,以增强检测器元件的性能。 该背面通过电绝缘粘合剂层固定到电路基板。 主体部分通过在背面的区域外部并且在孔之间的表面部分处的金属化连接到基板导体。 所得到的器件是电路基板上的高性能检测器元件的紧密排列的阵列。 相邻孔之间的间距为100微米或更小。
    • 8. 发明授权
    • Infra-red radiation imaging devices and methods for their manufacture
    • 红外辐射成像装置及其制造方法
    • US4521798A
    • 1985-06-04
    • US355835
    • 1982-03-08
    • Ian M. Baker
    • Ian M. Baker
    • G01J5/02G01J5/28G01T1/24H01L27/146H01L27/148H01L31/09H01L27/14H01L23/48H01L29/06H01L31/00
    • H01L27/14856H01L27/14881
    • An array of photovoltaic infrared radiation detector elements are formed in a body of infrared-sensitive material, e.g. of cadmium mercury telluride. The body is present on a circuit substrate, which may comprise a silicon CCD for processing signals from the detector elements. An array of regions of a first conductivity type, which form the p-n junctions of each detector element with an adjacent body part of opposite conductivity type, extend through the thickness of the body at side walls of an array of apertures. Each aperture is associated with a detector element and is preferably formed by ion etching. These regions of the first conductivity type are electrically connected to substrate conductors in a simple and reliable manner by a metallization layer in the apertures, without rendering a significant area of the detector insensitive to radiation imaged onto the upper surface of the body. At least the back surface of the detector body has a passivating layer over the area around and between the apertures to enhance detector element performance. This back surface is secured to the circuit substrate by a layer of electrically insulating adhesive. The main body part is connected to a substrate conductor by a metallization at a surface portion which is outside of the area of the back surface and which is between the apertures. The resulting device is a closely-packed array of high performance detector elements on a circuit substrate. The spacing between adjacent apertures is 100 microns or less.
    • 一组光电红外辐射探测器元件形成在红外线敏感材料体内, 的碲化汞镉。 身体存在于电路基板上,电路基板可以包括用于处理来自检测器元件的信号的硅CCD。 形成具有相反导电类型的相邻主体部分的每个检测器元件的p-n结的第一导电类型的区域的阵列在孔阵列的侧壁的侧壁处延伸穿过主体的厚度。 每个孔与检测器元件相关联,并且优选地通过离子蚀刻形成。 第一导电类型的这些区域以简单和可靠的方式通过孔中的金属化层电连接到衬底导体,而不会使检测器的显着区域对于成像到身体的上表面上的辐射不敏感。 至少检测器主体的后表面在孔周围和区域之间的区域上具有钝化层,以增强检测器元件的性能。 该背面通过电绝缘粘合剂层固定到电路基板。 主体部分通过在背面的区域外部并且在孔之间的表面部分处的金属化连接到基板导体。 所得到的器件是电路基板上的高性能检测器元件的紧密排列的阵列。 相邻孔之间的间距为100微米或更小。
    • 10. 发明申请
    • DEVICE FOR 3D IMAGING
    • 3D成像设备
    • US20100283834A1
    • 2010-11-11
    • US12811353
    • 2009-02-05
    • Ian M. Baker
    • Ian M. Baker
    • H04N13/02
    • G01S17/89G01S7/487G01S17/107
    • A 3 dimensional (3D) imaging device is described. The device emits a laser pulse towards a scene. Radiation reflected by the scene includes information relating to the range between objects in the scene. A detector, detects the reflected radiation pulses and outputs signals characteristic of the scene to an imaging device or camera. Two image frames will be produced per radiation pulse, one frame being representative of the ‘close’ object and the second frame being representative of the ‘far’ object. The ratio of these frames may be processed by suitable means to produce a 3D image of the scene.
    • 描述了三维(3D)成像装置。 该设备向场景发射激光脉冲。 由场景反射的辐射包括与场景中的对象之间的范围有关的信息。 检测器检测反射的辐射脉冲,并将场景的特征信号输出到成像装置或照相机。 每个辐射脉冲将产生两个图像帧,一个帧代表“关闭”对象,第二个帧代表“远”对象。 这些帧的比例可以通过合适的方式来处理以产生场景的3D图像。