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1. 发明授权

US10807199B2 Multi-laser system and method for cutting and post-cut processing hard dielectric materials 有权
公开(公告)号：US10807199B2
公开(公告)日：2020-10-20
申请号：US15708628
申请日：2017-09-19
申请人： IPG Photonics Corporation
发明人： Jeffrey P. Sercel , Marco Mendes , Rouzbeh Sarrafi , Joshua Schoenly , Xiangyang Song , Mathew Hannon , Miroslaw Sokol
IPC分类号： B23K26/40 , B23K26/06 , B23K26/08 , B23K26/402 , B23K26/38 , B23K26/0622 , B23K26/361 , B23K26/082 , B23K26/70 , C03B33/02 , B23K103/00
摘要： Laser processing of hard dielectric materials may include cutting a part from a hard dielectric material using a continuous wave laser operating in a quasi-continuous wave (QCW) mode to emit consecutive laser light pulses in a wavelength range of about 1060 nm to 1070 nm. Cutting using a QCW laser may be performed with a lower duty cycle (e.g., between about 1% and 15%) and in an inert gas atmosphere such as nitrogen, argon or helium. Laser processing of hard dielectric materials may further include post-cut processing the cut edges of the part cut from the dielectric material, for example, by beveling and/or polishing the edges to reduce edge defects. The post-cut processing may be performed using a laser beam with different laser parameters than the beam used for cutting, for example, by using a shorter wavelength (e.g., 193 nm excimer laser) and/or a shorter pulse width (e.g., picosecond laser).

2. 发明授权

US10297503B2 Laser lift off systems and methods 有权
公开(公告)号：US10297503B2
公开(公告)日：2019-05-21
申请号：US14624823
申请日：2015-02-18
申请人： IPG Photonics Corporation
发明人： Jeffrey P. Sercel , Marco Mendes , Jie Fu
IPC分类号： B32B43/00 , B23K26/40 , H01L21/78 , B32B38/00 , B32B38/10 , H01L21/67 , B23K101/40 , B23K103/00
摘要： Laser lift off systems and methods may be used to provide monolithic laser lift off with minimal cracking by reducing the size of one or more beam spots in one or more dimensions to reduce plume pressure while maintaining sufficient energy to provide separation. By irradiating irradiation zones with various shapes and in various patterns, the laser lift off systems and methods use laser energy more efficiently, reduce cracking when separating layers, and improve productivity. Some laser lift off systems and methods described herein separate layers of material by irradiating non-contiguous irradiation zones with laser lift off zones (LOZs) that extend beyond the irradiation zones. Other laser lift off systems and methods described herein separate layers of material by shaping the irradiation zones and by controlling the overlap of the irradiation zones in a way that avoids uneven exposure of the workpiece. Consistent with at least one embodiment, a laser lift off system and method may be used to provide monolithic lift off of one or more epitaxial layers on a substrate of a semiconductor wafer.

3. 发明授权

US09956646B2 Multiple-beam laser processing using multiple laser beams with distinct wavelengths and/or pulse durations 有权
公开(公告)号：US09956646B2
公开(公告)日：2018-05-01
申请号：US14633912
申请日：2015-02-27
申请人： IPG Photonics Corporation
发明人： Marco Mendes , Jeffrey P. Sercel , Rouzbeh Sarrafi , Xiangyang Song , Joshua Schoenly , Roy Van Gemert , Cristian Porneala
IPC分类号： B23K26/06 , B23K26/00 , B23K103/12
CPC分类号： B23K26/0006 , B23K26/0604 , B23K2103/12
摘要： Multiple-beam laser processing may be performed on a workpiece using at least first and second laser beams with different characteristics (e.g., wavelengths and/or pulse durations). In some applications, an assist laser beam is directed at a target location on or within the workpiece to modify a property of the non-absorptive material. A process laser beam is directed at the target location and is coupled into absorption centers formed in the non-absorptive material to complete processing of the non-absorptive material. Multiple-beam laser processing may be used, for example, to drill holes in a substrate made of alumina or other transparent ceramics. In other applications, multiple-beam laser processing may be used in melting applications such as micro-welding, soldering, and forming laser fired contacts. In these applications, the assist laser beam may be used to modify a property of the material or to change the geometry of the parts.

4. 发明申请

US20150246412A1 MULTIPLE-BEAM LASER PROCESSING USING MULTIPLE LASER BEAMS WITH DISTINCT WAVELENGTHS AND/OR PULSE DURATIONS 有权
标题翻译：多波束激光加工使用多个激光波长和/或脉冲持续时间
公开(公告)号：US20150246412A1
公开(公告)日：2015-09-03
申请号：US14633912
申请日：2015-02-27
申请人： IPG Photonics Corporation
发明人： Marco Mendes , Jeffrey P. Sercel , Rouzbeh Sarrafi , Xiangyang Song , Joshua Schoenly , Roy Van Gemert , Cristian Porneala
IPC分类号： B23K26/00 , B23K26/38
CPC分类号： B23K26/0006 , B23K26/0604 , B23K2103/12
摘要： Multiple-beam laser processing may be performed on a workpiece using at least first and second laser beams with different characteristics (e.g., wavelengths and/or pulse durations). In some applications, an assist laser beam is directed at a target location on or within the workpiece to modify a property of the non-absorptive material. A process laser beam is directed at the target location and is coupled into absorption centers formed in the non-absorptive material to complete processing of the non-absorptive material. Multiple-beam laser processing may be used, for example, to drill holes in a substrate made of alumina or other transparent ceramics. In other applications, multiple-beam laser processing may be used in melting applications such as micro-welding, soldering, and forming laser fired contacts. In these applications, the assist laser beam may be used to modify a property of the material or to change the geometry of the parts.
摘要翻译：可以使用至少具有不同特性（例如波长和/或脉冲持续时间）的第一和第二激光束在工件上执行多光束激光处理。在一些应用中，辅助激光束被引导到工件上或工件内的目标位置，以改变非吸收材料的性质。过程激光束被引导到目标位置，并且耦合到形成在非吸收材料中的吸收中心，以完成非吸收材料的处理。可以使用多光束激光加工，例如在由氧化铝或其它透明陶瓷制成的基板中钻孔。在其他应用中，多光束激光加工可用于熔化应用，例如微焊接，焊接和形成激光烧结接触。在这些应用中，辅助激光束可用于改变材料的性质或改变部件的几何形状。

5. 发明申请

US20190314934A1 SYSTEM AND METHOD FOR LASER BEVELING AND/OR POLISHING 审中-公开
公开(公告)号：US20190314934A1
公开(公告)日：2019-10-17
申请号：US16422558
申请日：2019-05-24
申请人： IPG Photonics Corporation
发明人： Jeffrey P. Sercel , Marco Mendes , Rouzbeh Sarrafi , Joshua Schoenly , Xiangyang Song , Mathew Hannon , Miroslaw Sokol
IPC分类号： B23K26/361 , B23K26/38 , B23K26/402 , B23K26/08
摘要： Laser processing of hard dielectric materials may include cutting a part from a hard dielectric material using a continuous wave laser operating in a quasi-continuous wave (QCW) mode to emit consecutive laser light pulses in a wavelength range of about 1060 nm to 1070 nm. Cutting using a QCW laser may be performed with a lower duty cycle (e.g., between about 1% and 15%) and in an inert gas atmosphere such as nitrogen, argon or helium. Laser processing of hard dielectric materials may further include post-cut processing the cut edges of the part cut from the dielectric material, for example, by beveling and/or polishing the edges to reduce edge defects. The post-cut processing may be performed using a laser beam with different laser parameters than the beam used for cutting, for example, by using a shorter wavelength (e.g., 193 nm excimer laser) and/or a shorter pulse width (e.g., picosecond laser).

6. 发明申请

US20190279905A1 Laser Lift Off Systems and Methods 审中-公开
公开(公告)号：US20190279905A1
公开(公告)日：2019-09-12
申请号：US16418284
申请日：2019-05-21
申请人： IPG Photonics Corporation
发明人： Jeffrey P. Sercel , Marco Mendes , Jie Fu
IPC分类号： H01L21/78 , B32B43/00 , B32B38/00 , B32B38/10 , H01L21/67 , B23K26/40
摘要： Laser lift off systems and methods may be used to provide monolithic laser lift off with minimal cracking by reducing the size of one or more beam spots in one or more dimensions to reduce plume pressure while maintaining sufficient energy to provide separation. By irradiating irradiation zones with various shapes and in various patterns, the laser lift off systems and methods use laser energy more efficiently, reduce cracking when separating layers, and improve productivity. Some laser lift off systems and methods described herein separate layers of material by irradiating non-contiguous irradiation zones with laser lift off zones (LOZs) that extend beyond the irradiation zones. Other laser lift off systems and methods described herein separate layers of material by shaping the irradiation zones and by controlling the overlap of the irradiation zones in a way that avoids uneven exposure of the workpiece. Consistent with at least one embodiment, a laser lift off system and method may be used to provide monolithic lift off of one or more epitaxial layers on a substrate of a semiconductor wafer.

7. 发明授权

US09764427B2 Multi-laser system and method for cutting and post-cut processing hard dielectric materials 有权
公开(公告)号：US09764427B2
公开(公告)日：2017-09-19
申请号：US14838809
申请日：2015-08-28
申请人： IPG Photonics Corporation
发明人： Jeffrey P. Sercel , Marco Mendes , Rouzbeh Sarrafi , Joshua Schoenly , Xiangyang Song , Mathew Hannon , Miroslaw Sokol
IPC分类号： B23K26/40 , B23K26/38 , B23K26/402 , C03B33/02 , B23K26/70 , B23K103/00
CPC分类号： B23K26/402 , B23K26/38 , B23K26/70 , B23K2103/50 , B23K2103/52 , B23K2103/54 , C03B33/0222 , Y02P40/57
摘要： Laser processing of hard dielectric materials may include cutting a part from a hard dielectric material using a continuous wave laser operating in a quasi-continuous wave (QCW) mode to emit consecutive laser light pulses in a wavelength range of about 1060 nm to 1070 nm. Cutting using a QCW laser may be performed with a lower duty cycle (e.g., between about 1% and 15%) and in an inert gas atmosphere such as nitrogen, argon or helium. Laser processing of hard dielectric materials may further include post-cut processing the cut edges of the part cut from the dielectric material, for example, by beveling and/or polishing the edges to reduce edge defects. The post-cut processing may be performed using a laser beam with different laser parameters than the beam used for cutting, for example, by using a shorter wavelength (e.g., 193 nm excimer laser) and/or a shorter pulse width (e.g., picosecond laser).

8. 发明授权

US11565350B2 System and method for laser beveling and/or polishing 有权
公开(公告)号：US11565350B2
公开(公告)日：2023-01-31
申请号：US16422558
申请日：2019-05-24
申请人： IPG Photonics Corporation
发明人： Jeffrey P. Sercel , Marco Mendes , Rouzbeh Sarrafi , Joshua Schoenly , Xiangyang Song , Mathew Hannon , Miroslaw Sokol
IPC分类号： B23K26/361 , B23K26/08 , B23K26/38 , B23K26/402 , B23K103/00
摘要： Laser processing of hard dielectric materials may include cutting a part from a hard dielectric material using a continuous wave laser operating in a quasi-continuous wave (QCW) mode to emit consecutive laser light pulses in a wavelength range of about 1060 nm to 1070 nm. Cutting using a QCW laser may be performed with a lower duty cycle (e.g., between about 1% and 15%) and in an inert gas atmosphere such as nitrogen, argon or helium. Laser processing of hard dielectric materials may further include post-cut processing the cut edges of the part cut from the dielectric material, for example, by beveling and/or polishing the edges to reduce edge defects. The post-cut processing may be performed using a laser beam with different laser parameters than the beam used for cutting, for example, by using a shorter wavelength (e.g., 193 nm excimer laser) and/or a shorter pulse width (e.g., picosecond laser).

9. 发明授权

US11239116B2 Laser lift off systems and methods 有权
公开(公告)号：US11239116B2
公开(公告)日：2022-02-01
申请号：US16418284
申请日：2019-05-21
申请人： IPG Photonics Corporation
发明人： Jeffrey P. Sercel , Marco Mendes , Jie Fu
IPC分类号： B32B38/10 , B23K26/40 , H01L21/78 , B32B38/00 , B32B43/00 , H01L21/67 , B23K101/40 , B23K103/00
摘要： Laser lift off systems and methods may be used to provide monolithic laser lift off with minimal cracking by reducing the size of one or more beam spots in one or more dimensions to reduce plume pressure while maintaining sufficient energy to provide separation. By irradiating irradiation zones with various shapes and in various patterns, the laser lift off systems and methods use laser energy more efficiently, reduce cracking when separating layers, and improve productivity. Some laser lift off systems and methods described herein separate layers of material by irradiating non-contiguous irradiation zones with laser lift off zones (LOZs) that extend beyond the irradiation zones. Other laser lift off systems and methods described herein separate layers of material by shaping the irradiation zones and by controlling the overlap of the irradiation zones in a way that avoids uneven exposure of the workpiece. Consistent with at least one embodiment, a laser lift off system and method may be used to provide monolithic lift off of one or more epitaxial layers on a substrate of a semiconductor wafer.

10. 发明授权

US10974494B2 Laser lift off systems and methods that overlap irradiation zones to provide multiple pulses of laser irradiation per location at an interface between layers to be separated 有权
公开(公告)号：US10974494B2
公开(公告)日：2021-04-13
申请号：US15613768
申请日：2017-06-05
申请人： IPG Photonics Corporation
发明人： Cristian Porneala , Mathew Hannon , Marco Mendes , Jeffrey P. Sercel
IPC分类号： B32B43/00 , B23K26/50 , B23K26/40 , B23K101/40 , B23K103/00
摘要： Laser lift off systems and methods overlap irradiation zones to provide multiple pulses of laser irradiation per location at the interface between layers of material to be separated. To overlap irradiation zones, the laser lift off systems and methods provide stepwise relative movement between a pulsed laser beam and a workpiece. The laser irradiation may be provided by a non-homogeneous laser beam with a smooth spatial distribution of energy across the beam profile. The pulses of laser irradiation from the non-homogenous beam may irradiate the overlapping irradiation zones such that each of the locations at the interface is exposed to different portions of the non-homogeneous beam for each of the multiple pulses of the laser irradiation, thereby resulting in self-homogenization. Thus, the number of the multiple pulses of laser irradiation per location is generally sufficient to provide the self-homogenization and to separate the layers of material.

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