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    • 2. 发明授权
    • Amplification method for photoresist exposure in semiconductor chip manufacturing
    • 半导体芯片制造中光致抗蚀剂曝光的放大方法
    • US09104113B2
    • 2015-08-11
    • US13735232
    • 2013-01-07
    • International Business Machines Corporation
    • Richard S. WiseDaniel A. Corliss
    • G03F7/20
    • G03F7/70325G03F7/2004G03F7/2041G03F7/70058G03F7/70308G03F7/70375
    • An electrical field is applied through an extreme ultraviolet (EUV) photoresist layer along a direction perpendicular to an interface between the EUV photoresist layer and an underlying layer. Secondary electrons and thermal electrons are accelerated along the direction of the electrical field, and travel with directionality before interacting with the photoresist material for a chemical reaction. The directionality increases the efficiency of electron photoacid capture, reducing the required EUV dose for exposure. Furthermore, this directionality reduces lateral diffusion of the secondary and thermal electrons, and thereby reduces blurring of the image and improves the image resolution of feature edges formed in the EUV photoresist layer. The electrical field may be generated by applying a direct current (DC) and/or alternating current (AC) bias voltage across an electrostatic chuck and a conductive plate placed over the EUV photoresist layer with a hole for passing the EUV radiation through.
    • 沿着与EUV光致抗蚀剂层和下层之间的界面垂直的方向通过极紫外(EUV)光致抗蚀剂层施加电场。 二次电子和热电子沿着电场的方向被加速,并且在与用于化学反应的光致抗蚀剂材料相互作用之前以方向性行进。 方向性增加了电子光酸捕获的效率,降低了暴露所需的EUV剂量。 此外,这种方向性减小了二次和热电子的横向扩散,从而减少了图像的模糊并改善了形成在EUV光致抗蚀剂层中的特征边缘的图像分辨率。 可以通过在静电卡盘和放置在EUV光致抗蚀剂层上的导电板上施加直流(DC)和/或交流(AC)偏置电压来产生电场,所述导电板具有用于使EUV辐射通过的孔。
    • 7. 发明申请
    • DUAL PULSE DRIVEN EXTREME ULTRAVIOLET (EUV) RADIATION SOURCE
    • 双脉冲驱动极端超紫外线(EUV)辐射源
    • US20160205757A1
    • 2016-07-14
    • US15077187
    • 2016-03-22
    • International Business Machines Corporation
    • Daniel A. CorlissSadanand V. DeshpandeVeeresh V. DeshpandeOleg GluschenkovSivarama Krishnan
    • H05G2/00
    • H05G2/005H05G2/003H05G2/008
    • An extreme ultraviolet (EUV) radiation source pellet includes at least one metal particle embedded within a heavy noble gas cluster contained within a noble gas shell cluster. The EUV radiation source assembly can be activated by a sequential irradiation of at least one first laser pulse and at least one second laser pulse. Each first laser pulse generates plasma by detaching outer orbital electrons from the at least one metal particle and releasing the electrons into the heavy noble gas cluster. Each second laser pulse amplifies the plasma embedded in the heavy noble gas cluster triggering a laser-driven self-amplifying process. The amplified plasma induces inter-orbital electron transitions in heavy noble gas and other constitute atoms leading to emission of EUV radiation. The laser pulsing units can be combined with a source pellet generation unit to form an integrated EUV source system.
    • 极紫外(EUV)辐射源颗粒包括至少一种金属颗粒,该金属颗粒嵌入到包含在惰性气体壳簇内的重稀有气体簇中。 可以通过顺序照射至少一个第一激光脉冲和至少一个第二激光脉冲来激活EUV辐射源组件。 每个第一激光脉冲通过从外部轨道电子从至少一个金属颗粒分离并将电子释放到重稀有气体簇中来产生等离子体。 每个第二激光脉冲放大埋在重稀有气体簇中的等离子体,从而触发激光驱动的自放大过程。 放大的等离子体引起重稀土气体中的轨道间电子跃迁,其他构成原子,导致发射EUV辐射。 激光脉冲单元可以与源粒子产生单元组合以形成集成的EUV源系统。