专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20150318296A1 NON-VOLATILE MEMORY DEVICES WITH VERTICALLY INTEGRATED CAPACITOR ELECTRODES 有权
标题翻译：具有垂直集成电容器电极的非易失性存储器件
公开(公告)号：US20150318296A1
公开(公告)日：2015-11-05
申请号：US14702038
申请日：2015-05-01
申请人： Hyun-suk Kim , Joon-hee Lee , Kee-jeong Rho
发明人： Hyun-suk Kim , Joon-hee Lee , Kee-jeong Rho
IPC分类号： H01L27/115 , H01L49/02
CPC分类号： H01L27/11573 , H01L27/11519 , H01L27/11521 , H01L27/11526 , H01L27/11556 , H01L27/11565 , H01L27/11568 , H01L27/1157 , H01L27/11582 , H01L28/60 , H01L28/91
摘要： Provided is a vertical non-volatile memory device in which a capacitor constituting a peripheral circuit region is formed as a vertical type so that an area occupied by the capacitor in the entire device can be reduced as compared with a planar capacitor. Thus, a non-volatile memory device may be highly integrated and have a high capacity. The device includes a substrate having a cell region and a peripheral circuit region, a memory cell string including a plurality of vertical memory cells formed in the cell region and channel holes formed to penetrate the vertical memory cells in a first direction vertical to the substrate, an insulating layer formed in the peripheral circuit region on the substrates at substantially the same level as an upper surface of the memory cell string, and a plurality of capacitor electrodes formed on the peripheral circuit region to penetrate at least a portion of the insulating layer in the first direction, the plurality of capacitor electrodes extending parallel to the channel holes. The plurality of capacitor electrodes are spaced apart from one another in a second direction parallel to the substrate, and the insulating layer is interposed between a pair of adjacent capacitor electrodes from among the plurality of capacitor electrodes.
摘要翻译：提供了一种垂直非易失性存储器件，其中构成外围电路区域的电容器形成为垂直型，使得与平面电容器相比，整个器件中的电容器占据的面积可以减小。因此，非易失性存储器件可以高度集成并具有高容量。该装置包括具有单元区域和外围电路区域的基板，包括形成在单元区域中的多个垂直存储单元的存储单元串和形成为沿垂直于基板的第一方向穿透垂直存储单元的通道孔，形成在基板上的外围电路区域中的与存储单元串的上表面基本相同的绝缘层，以及形成在外围电路区域上的多个电容器电极，以穿透绝缘层的至少一部分第一方向，多个电容器电极平行于通道孔延伸。多个电容器电极在与基板平行的第二方向上彼此间隔开，并且绝缘层插入在多个电容器电极中的一对相邻的电容器电极之间。

2. 发明授权

US10014315B2 Non-volatile memory devices with vertically integrated capacitor electrodes 有权
公开(公告)号：US10014315B2
公开(公告)日：2018-07-03
申请号：US15589528
申请日：2017-05-08
申请人： Hyun-suk Kim , Joon-hee Lee , Kee-jeong Rho
发明人： Hyun-suk Kim , Joon-hee Lee , Kee-jeong Rho
IPC分类号： H01L27/11573 , H01L49/02 , H01L27/11519 , H01L27/11526 , H01L27/11556 , H01L27/11565 , H01L27/1157 , H01L27/11582 , H01L27/11521 , H01L27/11568
CPC分类号： H01L27/11573 , H01L27/11519 , H01L27/11521 , H01L27/11526 , H01L27/11556 , H01L27/11565 , H01L27/11568 , H01L27/1157 , H01L27/11582 , H01L28/60 , H01L28/91
摘要： Provided is a vertical non-volatile memory device in which a capacitor constituting a peripheral circuit region is formed as a vertical type so that an area occupied by the capacitor in the entire device can be reduced as compared with a planar capacitor. Thus, a non-volatile memory device may be highly integrated and have a high capacity. The device includes a substrate having a cell region and a peripheral circuit region, a memory cell string including a plurality of vertical memory cells formed in the cell region and channel holes formed to penetrate the vertical memory cells in a first direction vertical to the substrate, an insulating layer formed in the peripheral circuit region on the substrates at substantially the same level as an upper surface of the memory cell string, and a plurality of capacitor electrodes formed on the peripheral circuit region to penetrate at least a portion of the insulating layer in the first direction, the plurality of capacitor electrodes extending parallel to the channel holes. The plurality of capacitor electrodes are spaced apart from one another in a second direction parallel to the substrate, and the insulating layer is interposed between a pair of adjacent capacitor electrodes from among the plurality of capacitor electrodes.

3. 发明授权

US09659954B2 Non-volatile memory devices with vertically integrated capacitor electrodes 有权
公开(公告)号：US09659954B2
公开(公告)日：2017-05-23
申请号：US14702038
申请日：2015-05-01
申请人： Hyun-suk Kim , Joon-hee Lee , Kee-jeong Rho
发明人： Hyun-suk Kim , Joon-hee Lee , Kee-jeong Rho
IPC分类号： H01L29/94 , H01L29/76 , H01L27/11582 , H01L27/11519 , H01L27/11526 , H01L27/11556 , H01L27/11565 , H01L49/02 , H01L27/1157 , H01L27/11573
CPC分类号： H01L27/11573 , H01L27/11519 , H01L27/11521 , H01L27/11526 , H01L27/11556 , H01L27/11565 , H01L27/11568 , H01L27/1157 , H01L27/11582 , H01L28/60 , H01L28/91
摘要： Provided is a vertical non-volatile memory device in which a capacitor constituting a peripheral circuit region is formed as a vertical type so that an area occupied by the capacitor in the entire device can be reduced as compared with a planar capacitor. Thus, a non-volatile memory device may be highly integrated and have a high capacity. The device includes a substrate having a cell region and a peripheral circuit region, a memory cell string including a plurality of vertical memory cells formed in the cell region and channel holes formed to penetrate the vertical memory cells in a first direction vertical to the substrate, an insulating layer formed in the peripheral circuit region on the substrates at substantially the same level as an upper surface of the memory cell string, and a plurality of capacitor electrodes formed on the peripheral circuit region to penetrate at least a portion of the insulating layer in the first direction, the plurality of capacitor electrodes extending parallel to the channel holes. The plurality of capacitor electrodes are spaced apart from one another in a second direction parallel to the substrate, and the insulating layer is interposed between a pair of adjacent capacitor electrodes from among the plurality of capacitor electrodes.

4. 发明申请

US20120025187A1 Transistors, methods of manufacturing transistors, and electronic devices including transistors 审中-公开
标题翻译：晶体管，制造晶体管的方法以及包括晶体管的电子器件
公开(公告)号：US20120025187A1
公开(公告)日：2012-02-02
申请号：US13064428
申请日：2011-03-24
申请人： Kyung-bae Park , Hyun-suk Kim , Myung-kwan Ryu , Sang-yoon Lee , Kwang-hee Lee , Tae-sang Kim , Eok-su Kim , Kyoung-seok Son , Wan-joo Maeng , Joon-seok Park
发明人： Kyung-bae Park , Hyun-suk Kim , Myung-kwan Ryu , Sang-yoon Lee , Kwang-hee Lee , Tae-sang Kim , Eok-su Kim , Kyoung-seok Son , Wan-joo Maeng , Joon-seok Park
IPC分类号： H01L29/786 , H01L21/44
CPC分类号： H01L29/7869 , H01L29/66969 , H01L29/78696
摘要： Transistors, methods of manufacturing the transistors, and electronic devices including the transistors. The transistor may include an oxide channel layer having a multi-layer structure. The channel layer may include a first layer and a second layer that are sequentially arranged from a gate insulation layer. The first layer may be a conductor, and the second layer may be a semiconductor having a lower electrical conductivity than that of the first layer. The first layer may become a depletion region according to a gate voltage condition.
摘要翻译：晶体管，制造晶体管的方法以及包括晶体管的电子器件。晶体管可以包括具有多层结构的氧化物沟道层。沟道层可以包括从栅极绝缘层顺序排列的第一层和第二层。第一层可以是导体，第二层可以是具有比第一层低的导电性的半导体。第一层可以根据栅极电压条件成为耗尽区。

5. 发明授权

US07692622B2 Liquid crystal display apparatus 有权
标题翻译：液晶显示装置
公开(公告)号：US07692622B2
公开(公告)日：2010-04-06
申请号：US11115234
申请日：2005-04-27
申请人： Hyun-suk Kim , Jin-bog Kim
发明人： Hyun-suk Kim , Jin-bog Kim
IPC分类号： G09G3/36
CPC分类号： G09G3/3426 , G09G3/3413 , G09G2320/0606 , G09G2320/0633 , G09G2320/0666
摘要： An LCD apparatus with an LCD panel displaying a picture thereon, including a backlight array in which a plurality of light emitting devices illuminating the LCD panel with a plurality of colors is arranged to have a predetermined pattern. A backlight driver drives each light emitting device to emit light and to adjust light intensity; and a controller controls the backlight driver to adjust a white balance of a picture displayed on the LCD panel. With this configuration, an LCD apparatus is provided, in which a white balance is adjusted without making a loss in a representable brightness level, i.e., brightness, and lowering a contrast ratio. Also included is an LCD apparatus, in which a white balance is adjusted according to formats of an input video signal.
摘要翻译：一种具有在其上显示图像的LCD面板的液晶显示装置，包括背光阵列，其中以多种颜色照亮LCD面板的多个发光装置被布置成具有预定图案。背光驱动器驱动每个发光器件发光并调节光强度; 并且控制器控制背光驱动器来调节LCD面板上显示的图像的白平衡。利用这种结构，提供了一种LCD装置，其中调节白平衡而不会造成可表示的亮度水平的损失，即亮度，并降低对比度。还包括一种LCD装置，其中根据输入视频信号的格式调整白平衡。

6. 发明申请

US20070147132A1 Pixel circuits including boosting capacitors, methods of driving the same, and image sensors including the same 审中-公开
标题翻译：包括升压电容器的像素电路，其驱动方法以及包括其的图像传感器
公开(公告)号：US20070147132A1
公开(公告)日：2007-06-28
申请号：US11641884
申请日：2006-12-20
申请人： Yong-jei Lee , Byung-soo Kim , Jung-chak Ahn , Jong-eun Park , Hyun-suk Kim
发明人： Yong-jei Lee , Byung-soo Kim , Jung-chak Ahn , Jong-eun Park , Hyun-suk Kim
IPC分类号： G11C11/34 , G11C16/06
CPC分类号： H04N5/3745 , G11C27/00 , H04N5/3597 , H04N5/374 , H04N5/37452
摘要： A pixel circuit of an image sensor includes a photodiode that generates photocharges corresponding to light input to the photodiode; a transfer transistor that transfers the photocharges to a floating diffusion node in response to a transfer control signal; a reset transistor that transfers a power voltage to the floating diffusion node in response to a reset control signal; a signal output unit that outputs a voltage signal corresponding to a voltage of the floating diffusion node in response to a select control signal; and one or more boosting capacitors connected between a gate of the transfer transistor and the floating diffusion node. The reset transistor is an enhancement type MOSFET. A method of driving the pixel circuit and an image sensor are also disclosed.
摘要翻译：图像传感器的像素电路包括产生对应于输入到光电二极管的光的光电荷的光电二极管; 转移晶体管，其响应于转移控制信号将光电荷转移到浮动扩散节点; 复位晶体管，其响应于复位控制信号将电源电压传送到所述浮动扩散节点; 信号输出单元，响应于选择控制信号输出与浮动扩散节点的电压对应的电压信号; 以及连接在传输晶体管的栅极和浮动扩散节点之间的一个或多个升压电容器。复位晶体管是增强型MOSFET。还公开了驱动像素电路和图像传感器的方法。

7. 发明申请

US20050140693A1 Display system 审中-公开
标题翻译：显示系统
公开(公告)号：US20050140693A1
公开(公告)日：2005-06-30
申请号：US10930916
申请日：2004-09-01
申请人： Hyun-suk Kim , Se-woong Park , Kil-soo Park , Jin-bog Kim , Man-yong Shin
发明人： Hyun-suk Kim , Se-woong Park , Kil-soo Park , Jin-bog Kim , Man-yong Shin
IPC分类号： H04N9/64 , G09G5/02 , H04N1/62 , H04N9/67
CPC分类号： H04N9/643 , H04N1/628 , H04N9/68
摘要： A display system to display an image resulting from an image signal, comprising a color converting part which converts the image signal to change a color distributed in a color area grouped by a plurality of colors and formed as one of a variety of geometric shapes in a color space and the color is changed within the color area. The user interface generator provides one or more user interface components to visually accommodate the color change in the respective color areas without affecting the rest of the image.
摘要翻译：一种用于显示由图像信号产生的图像的显示系统，包括：颜色转换部分，其转换图像信号，以改变分布在由多种颜色分组的颜色区域中的颜色，并形成为各种几何形状之一颜色空间和颜色在颜色区域内改变。用户界面生成器提供一个或多个用户界面组件以可视地容纳各个颜色区域中的颜色变化，而不影响图像的其余部分。

8. 发明授权

US09184300B2 Transistor, method of manufacturing the same, and electronic device including transistor 有权
标题翻译：晶体管及其制造方法以及包括晶体管的电子器件
公开(公告)号：US09184300B2
公开(公告)日：2015-11-10
申请号：US13588462
申请日：2012-08-17
申请人： Kyoung-seok Son , Myung-kwan Ryu , Tae-sang Kim , Hyun-suk Kim , Joon-seok Park , Jong-baek Seon , Sang-yoon Lee
发明人： Kyoung-seok Son , Myung-kwan Ryu , Tae-sang Kim , Hyun-suk Kim , Joon-seok Park , Jong-baek Seon , Sang-yoon Lee
IPC分类号： H01L29/786
CPC分类号： H01L29/78696 , H01L29/78618 , H01L29/78681 , H01L29/7869
摘要： A transistor may include a hole blocking layer between a channel layer including oxynitride and an electrode electrically connected to the channel layer. The hole blocking layer may be disposed in a region between the channel layer and at least one of a source electrode and a drain electrode. The channel layer may include, for example, zinc oxynitride (ZnON). A valence band maximum energy level of the hole blocking layer may be lower than a valence band maximum energy level of the channel layer.
摘要翻译：晶体管可以包括在包括氮氧化物的沟道层和电连接到沟道层的电极之间的空穴阻挡层。空穴阻挡层可以设置在沟道层与源电极和漏电极中的至少一个之间的区域中。沟道层可以包括例如氮氧化锌（ZnON）。空穴阻挡层的价带最大能级可以低于沟道层的价带最大能级。

9. 发明授权

US09099561B2 Transistors and electronic devices including the transistors 有权
标题翻译：晶体管和包括晶体管的电子器件
公开(公告)号：US09099561B2
公开(公告)日：2015-08-04
申请号：US13489888
申请日：2012-06-06
申请人： Hyun-suk Kim , Sang-yoon Lee , Myung-kwan Ryu , Tae-sang Kim , Jong-baek Seon , Kyoung-seok Son , Won-mook Choi , Joon-seok Park , Mi-jeong Song
发明人： Hyun-suk Kim , Sang-yoon Lee , Myung-kwan Ryu , Tae-sang Kim , Jong-baek Seon , Kyoung-seok Son , Won-mook Choi , Joon-seok Park , Mi-jeong Song
IPC分类号： H01L29/786
CPC分类号： H01L29/78633 , H01L29/78669 , H01L29/78678 , H01L29/7869
摘要： A transistor may include a light-blocking layer that blocks light incident on a channel layer. The light-blocking layer may include a carbon-based material. The carbon-based material may include graphene oxide, graphite oxide, graphene or carbon nanotube (CNT). The light-blocking layer may be between a gate and at least one of the channel layer, a source and a drain.
摘要翻译：晶体管可以包括阻挡入射在沟道层上的光的遮光层。遮光层可以包括碳基材料。碳基材料可以包括氧化石墨烯，氧化石墨，石墨烯或碳纳米管（CNT）。遮光层可以在栅极和沟道层，源极和漏极中的至少一个之间。

10. 发明申请

US20130043475A1 TRANSISTORS AND ELECTRONIC DEVICES INCLUDING THE TRANSISTORS 有权
标题翻译：晶体管和包括晶体管的电子器件
公开(公告)号：US20130043475A1
公开(公告)日：2013-02-21
申请号：US13489888
申请日：2012-06-06
申请人： Hyun-suk Kim , Sang-yoon Lee , Myung-kwan Ryu , Tae-sang Kim , Jong-baek Seon , Kyoung-seok Son , Won-mook Choi , Joon-seok Park , Mi-jeong Song
发明人： Hyun-suk Kim , Sang-yoon Lee , Myung-kwan Ryu , Tae-sang Kim , Jong-baek Seon , Kyoung-seok Son , Won-mook Choi , Joon-seok Park , Mi-jeong Song
IPC分类号： H01L29/786 , H01L29/772 , B82Y99/00
CPC分类号： H01L29/78633 , H01L29/78669 , H01L29/78678 , H01L29/7869
摘要： A transistor may include a light-blocking layer that blocks light incident on a channel layer. The light-blocking layer may include a carbon-based material. The carbon-based material may include graphene oxide, graphite oxide, graphene or carbon nanotube (CNT). The light-blocking layer may be between a gate and at least one of the channel layer, a source and a drain.
摘要翻译：晶体管可以包括阻挡入射在沟道层上的光的遮光层。遮光层可以包括碳基材料。碳基材料可以包括氧化石墨烯，氧化石墨，石墨烯或碳纳米管（CNT）。遮光层可以在栅极和沟道层，源极和漏极中的至少一个之间。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式