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    • 1. 发明授权
    • Method for etching Pt film of semiconductor device
    • 蚀刻半导体器件的Pt膜的方法
    • US6004882A
    • 1999-12-21
    • US16022
    • 1998-01-30
    • Hyoun-woo KimByeong-yun NamByong-sun JuWon-jong Yoo
    • Hyoun-woo KimByeong-yun NamByong-sun JuWon-jong Yoo
    • C23F4/00H01L21/285H01L21/302H01L21/3065H01L21/3213H01L21/8242H01L27/108
    • H01L21/32136H01L21/28512
    • A method for etching a platinum (Pt) layer of a semiconductor device is provided which improves the etching slope of a sidewall of the platinum layer used as a storage node of the semiconductor device. The semiconductor device consists of a semiconductor substrate including a bottom layer on which various other layers are formed. Specifically, according to this invention, a Pt layer is formed on a bottom layer of a semiconductor substrate. An adhesive layer is then formed on the Pt layer while a mask layer is formed on the adhesive layer. After formation of the various layers, the mask layer and adhesive layer are patterned using an etching process to form a mask pattern and an adhesive layer mask pattern, respectively. The semiconductor substrate is then heated and an etching process is performned on the Pt layer using the mask pattern and the adhesive layer mask pattern to form etching slope sidewalls of the Pt layer having etching slopes close to vertical. Accordingly, the Pt electrodes of the semiconductor device of the present invention have a finer pattern than those of the prior art. Finally, overetching is done to remove the mask pattern.
    • 提供一种用于蚀刻半导体器件的铂(Pt)层的方法,其改善了用作半导体器件的存储节点的铂层的侧壁的蚀刻斜率。 半导体器件由包括其上形成有各种其它层的底层的半导体衬底组成。 具体地,根据本发明,在半导体衬底的底层上形成Pt层。 然后在Pt层上形成粘合剂层,同时在粘合剂层上形成掩模层。 在形成各层之后,使用蚀刻工艺对掩模层和粘合剂层进行图案化以分别形成掩模图案和粘合剂层掩模图案。 然后加热半导体衬底并使用掩模图案和粘合剂层掩模图案在Pt层上进行蚀刻处理,以形成具有接近垂直的蚀刻斜率的Pt层的蚀刻斜面侧壁。 因此,本发明的半导体器件的Pt电极具有比现有技术更精细的图案。 最后,进行过蚀刻以去除掩模图案。