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1. 发明授权

US07262067B2 Method for conductive film quality evaluation 有权
标题翻译：导电膜质量评价方法
公开(公告)号：US07262067B2
公开(公告)日：2007-08-28
申请号：US10830577
申请日：2004-04-23
申请人： Hsien-Ping Feng , Min-Yuan Cheng , Hsi-Kuei Cheng , Steven Lin , Huang-Yi Huang , Yuh-Da Fan
发明人： Hsien-Ping Feng , Min-Yuan Cheng , Hsi-Kuei Cheng , Steven Lin , Huang-Yi Huang , Yuh-Da Fan
IPC分类号： H01L21/66
CPC分类号： H01L22/20 , H01L21/76838
摘要： A method for monitoring copper film quality and for evaluating the annealing efficiency of a copper annealing process includes measuring hardness of a copper film formed on a substrate before and after annealing and comparing the hardness measurement results. The measurements can be correlated to grain boundary saturation levels, copper grain sizes and therefore conductivity. Hardness measurements may be taken at a plurality of locations throughout the substrate to account for variations in the copper film grain structure.
摘要翻译：用于监测铜膜质量和评价铜退火处理的退火效率的方法包括测量退火前后在基板上形成的铜膜的硬度，并比较硬度测量结果。测量可以与晶界饱和度，铜晶粒尺寸和导电性相关。可以在整个基板的多个位置处进行硬度测量，以考虑铜膜晶粒结构的变化。

2. 发明申请

US20050239221A1 Method for conductive film quality evaluation 有权
标题翻译：导电膜质量评价方法
公开(公告)号：US20050239221A1
公开(公告)日：2005-10-27
申请号：US10830577
申请日：2004-04-23
申请人： Hsien-Ping Feng , Min-Yuan Cheng , Hsi-Kuei Cheng , Steven Lin , Huang-Yi Huang , Yuh-Da Fan
发明人： Hsien-Ping Feng , Min-Yuan Cheng , Hsi-Kuei Cheng , Steven Lin , Huang-Yi Huang , Yuh-Da Fan
IPC分类号： H01L21/44 , H01L21/66 , H01L21/768
CPC分类号： H01L22/20 , H01L21/76838
摘要： A method for monitoring copper film quality and for evaluating the annealing efficiency of a copper annealing process includes measuring hardness of a copper film formed on a substrate before and after annealing and comparing the hardness measurement results. The measurements can be correlated to grain boundary saturation levels, copper grain sizes and therefore conductivity. Hardness measurements may be taken at a plurality of locations throughout the substrate to account for variations in the copper film grain structure.
摘要翻译：用于监测铜膜质量和评价铜退火处理的退火效率的方法包括测量退火前后在基板上形成的铜膜的硬度，并比较硬度测量结果。测量可以与晶界饱和度，铜晶粒尺寸和导电性相关。可以在整个基板的多个位置处进行硬度测量，以考虑铜膜晶粒结构的变化。

3. 发明申请

US20100099252A1 Methods to completely eliminate or significantly reduce defects in copper metallization in IC manufacturing 审中-公开
标题翻译：完全消除或显着减少IC制造中铜金属化缺陷的方法
公开(公告)号：US20100099252A1
公开(公告)日：2010-04-22
申请号：US12653440
申请日：2009-12-14
申请人： Chun-Hung Lin , Huang-Yi Huang , Yuh-Da Fan
发明人： Chun-Hung Lin , Huang-Yi Huang , Yuh-Da Fan
IPC分类号： H01L21/768
CPC分类号： H01L21/76843 , H01L21/76861 , H01L21/76862 , H01L21/76864 , H01L21/76865 , H01L21/76873
摘要： A method for the improved electroplating of copper onto a copper seed layer provides burnishing the surface of the copper seed layer. The burnishing treatment is used to enhance the platability of the copper seed layer. The burnishing may be a reverse electroplating or a sputter etching process. Following the burnishing of the seed layer, the copper layer that is electroplated onto the seed layer exhibits improved quality.
摘要翻译：用于改进铜在铜种子层上的电镀的方法提供抛光铜籽晶层的表面。抛光处理用于提高铜种子层的可镀性。抛光可以是反向电镀或溅射蚀刻工艺。在晶种层的抛光之后，电镀在籽晶层上的铜层表现出提高的质量。

4. 发明申请

US20080176397A1 Methods to completely eliminate or significantly reduce defects in copper metallization in IC manufacturing 审中-公开
标题翻译：完全消除或显着减少IC制造中铜金属化缺陷的方法
公开(公告)号：US20080176397A1
公开(公告)日：2008-07-24
申请号：US11827468
申请日：2007-07-12
申请人： Chun-Hung Lin , Huang-Yi Huang , Yuh-Da Fan
发明人： Chun-Hung Lin , Huang-Yi Huang , Yuh-Da Fan
IPC分类号： H01L21/768
CPC分类号： H01L21/76843 , H01L21/76861 , H01L21/76862 , H01L21/76864 , H01L21/76865 , H01L21/76873
摘要： A method for the improved electroplating of copper onto a copper seed layer provides treating the surface of a copper seed layer with nitrogen or another anaerobic gas. In another aspect, a burnishing treatment is used to enhance the platability of the copper seed layer. According to another aspect, the seed layer is annealed either at an elevated temperature or for an extended time at room temperature. According to another aspect, the seed layer surface is exposed to a chemical solution that includes a surfactant, chemicals that dissolve contaminants, or both. In another aspect, the deposition of the copper seed layer may be tailored to produce a surface morphology more suited to electroplating. Following the treatment of the seed layer, the copper layer that is electroplated onto the seed layer exhibits improved quality.
摘要翻译：用于将铜电镀改进到铜种子层上的方法提供用氮气或另一种无氧气体处理铜籽晶层的表面。另一方面，使用抛光处理来提高铜种子层的可镀性。根据另一方面，种子层在升高的温度下或在室温下延长时间退火。根据另一方面，种子层表面暴露于包含表面活性剂，溶解污染物的化学品或两者的化学溶液。在另一方面，可以调整铜籽晶层的沉积以产生更适合于电镀的表面形态。在种子层的处理之后，电镀在籽晶层上的铜层表现出提高的质量。

5. 发明申请

US20060094237A1 Methods to completely eliminate or significantly reduce defects in copper metallization in IC manufacturing 审中-公开
标题翻译：完全消除或显着减少IC制造中铜金属化缺陷的方法
公开(公告)号：US20060094237A1
公开(公告)日：2006-05-04
申请号：US10976376
申请日：2004-10-29
申请人： Chun-Hung Lin , Huang-Yi Huang , Yuh-Da Fan
发明人： Chun-Hung Lin , Huang-Yi Huang , Yuh-Da Fan
IPC分类号： H01L21/44
CPC分类号： H01L21/76843 , H01L21/76861 , H01L21/76862 , H01L21/76864 , H01L21/76865 , H01L21/76873
摘要： A method for the improved electroplating of copper on to a copper seed layer provides treating the surface of a copper seed layer with nitrogen or another anaerobic gas. In another aspect, a burnishing treatment is used to enhance the platability of the copper seed layer. According to another aspect, the seed layer is annealed either at an elevated temperature or for an extended time at room temperature. According to another aspect, the seed layer surface is exposed to a chemical solution that includes a surfactant, chemicals that dissolve contaminants, or both. In another aspect, the deposition of the copper seed layer may be tailored to produce a surface morphology more suited to electroplating. Following the treatment of the seed layer, the copper layer that is electroplated onto the seed layer exhibits improved quality.
摘要翻译：用于改进铜对铜籽晶层的电镀的方法提供用氮或另一种厌氧气体处理铜籽晶层的表面。另一方面，使用抛光处理来提高铜种子层的可镀性。根据另一方面，种子层在升高的温度下或在室温下延长时间退火。根据另一方面，种子层表面暴露于包含表面活性剂，溶解污染物的化学品或两者的化学溶液。在另一方面，可以调整铜籽晶层的沉积以产生更适合于电镀的表面形态。在种子层的处理之后，电镀在籽晶层上的铜层表现出提高的质量。

6. 发明申请

US20060226014A1 Method and process for improved uniformity of electrochemical plating films produced in semiconductor device processing 审中-公开
标题翻译：在半导体器件加工中生产的电化学电镀膜的均匀性提高的方法和工艺
公开(公告)号：US20060226014A1
公开(公告)日：2006-10-12
申请号：US11103917
申请日：2005-04-11
申请人： Yen Chuang , Huang-Yi Huang
发明人： Yen Chuang , Huang-Yi Huang
IPC分类号： C25D3/38
CPC分类号： C25D3/38 , C25D5/02 , C25D5/10
摘要： A method and device for ECP copper deposition into openings and over a surface of a semiconductor substrate provides a final deposited film with a uniform height across the substrate. The substrate is submerged in an ECP electrolyte solution with accelerants formed on a dielectric surface and in and over damascene openings formed in the dielectric surface, and copper is deposited onto the surface and into the damascene openings. A deplating process that uses a reverse polarity of power conditions used in the ECP process is then used for a brief time to remove some of the deposited copper and an excess portion of the accelerant. The copper is preferentially removed from portions where the initial deposition produced localized thick portions and the deplating process is followed by a further ECP process that yields a copper film with a uniform top surface.
摘要翻译：用于ECP铜沉积到开口中并在半导体衬底的表面上的方法和装置提供了跨越衬底的均匀高度的最终沉积膜。衬底被浸没在ECP电解质溶液中，其中形成在电介质表面上的加速剂和在电介质表面中形成的镶嵌开口中和铜上，并且铜沉积到表面和镶嵌开口中。然后使用使用ECP工艺中使用的功率条件的相反极性的脱镀工艺短暂时间以除去一些沉积的铜和多余的促进剂。优选地从初始沉积产生局部厚部分的部分去除铜，并且脱铝过程之后是进一步产生具有均匀顶表面的铜膜的ECP工艺。

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