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1. 发明申请

US20060115986A1 Edge removal of silicon-on-insulator transfer wafer 有权
标题翻译：边缘去除绝缘体上硅转移晶片
公开(公告)号：US20060115986A1
公开(公告)日：2006-06-01
申请号：US10998289
申请日：2004-11-26
申请人： Raymond Donohoe , Krishna Vepa , Paul Miller , Ronald Rayandayan , Hong Wang
发明人： Raymond Donohoe , Krishna Vepa , Paul Miller , Ronald Rayandayan , Hong Wang
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/76254 , H01L21/02032 , H01L21/304 , H01L21/30625 , H01L21/76251 , Y10S438/974
摘要： A silicon-on-insulator transfer wafer having a front surface with a circumferential lip around a circular recess is polished. In one version, the circular recess on the front surface of the wafer is masked by filling the recess with spin-on-glass. The front surface of the wafer is exposed to an etchant to preferentially etch away the circumferential lip, while the circular recess is masked by the spin-on-glass. The spin-on glass is removed, and the front surface of the transfer wafer is polished. Other methods of removing the circumferential lip include applying a higher pressure to the circumferential lip in a polishing process, and directing a pressurized fluid jet at the base of the circumferential lip.
摘要翻译：抛光具有围绕圆形凹槽的具有周向唇缘的前表面的绝缘体上硅转移晶片。在一个版本中，通过用旋转玻璃填充凹槽来掩蔽晶片前表面上的圆形凹槽。将晶片的前表面暴露于蚀刻剂以优先蚀刻掉周缘，同时圆形凹槽被旋涂玻璃掩蔽。去除旋涂玻璃，并且转印晶片的前表面被抛光。去除圆周唇缘的其它方法包括在抛光过程中向周缘施加更高的压力，并且在周向唇缘的底部引导加压流体射流。

2. 发明申请

US20070190799A1 REFURBISHING A WAFER HAVING A LOW-K DIELECTRIC LAYER 失效
标题翻译：再生一个具有低K介电层的波形
公开(公告)号：US20070190799A1
公开(公告)日：2007-08-16
申请号：US11737708
申请日：2007-04-19
申请人： Hong Wang , Krishna Vepa , Paul Miller
发明人： Hong Wang , Krishna Vepa , Paul Miller
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/31111 , H01L21/02079 , H01L21/31053 , Y10S438/911 , Y10S438/951
摘要： A wafer comprising a low-k dielectric layer is refurbished for reuse. Initially, a removable layer is provided on the wafer. The low-k dielectric layer is formed over the removable layer. The overlying low-k dielectric layer is removed from the wafer by etching away the removable layer by at least partially immersing the wafer in an etching solution,. Thereafter, another low-k dielectric layer can be formed over another removable layer.
摘要翻译：包括低k电介质层的晶片被翻新以重新使用。最初，在晶片上设置可移除层。低k电介质层形成在可移除层上。通过至少部分地将晶片浸入蚀刻溶液中，通过蚀刻去除可去除层而从晶片上去除覆盖的低k电介质层。此后，可以在另一可移除层上形成另一低k电介质层。

3. 发明申请

US20070190791A1 REMOVING A LOW-K DIELECTRIC LAYER FROM A WAFER BY CHEMICAL MECHANICAL POLISHING 审中-公开
标题翻译：通过化学机械抛光从波形中移除低K电介质层
公开(公告)号：US20070190791A1
公开(公告)日：2007-08-16
申请号：US11737706
申请日：2007-04-19
申请人： Hong Wang , Krishna Vepa , Paul Miller
发明人： Hong Wang , Krishna Vepa , Paul Miller
IPC分类号： H01L21/461 , H01L21/302
CPC分类号： H01L21/31111 , H01L21/02079 , H01L21/31053 , Y10S438/911 , Y10S438/951
摘要： A low-k dielectric layer having a k value of less than about 3 and comprising silicon, oxygen and carbon, is removed from a wafer. In the method, the wafer is chemical mechanical polished by rotating the surface of the wafer against a polishing pad having a hardness of at least about 40 JIS A, while applying a polishing slurry between the wafer and the polishing pad.
摘要翻译：具有k值小于约3并且包含硅，氧和碳的低k电介质层从晶片上去除。在该方法中，通过使晶片的表面相对于具有至少约40 JIS A的硬度的抛光垫旋转晶片，同时在晶片和抛光垫之间施加抛光浆料。

4. 发明申请

US20070190790A1 FINE GRINDING A LOW-K DIELECTRIC LAYER OFF A WAFER 审中-公开
标题翻译：精细研磨低K电介质层
公开(公告)号：US20070190790A1
公开(公告)日：2007-08-16
申请号：US11737704
申请日：2007-04-19
申请人： Hong Wang , Krishna Vepa , Paul Miller
发明人： Hong Wang , Krishna Vepa , Paul Miller
IPC分类号： H01L21/461 , H01L21/302
CPC分类号： H01L21/31111 , H01L21/02079 , H01L21/31053 , Y10S438/911 , Y10S438/951
摘要： A low-k dielectric layer is removed from a wafer to refresh the wafer. The low-k dielectric layer has a k value of less than about 3 and comprises silicon, oxygen and carbon. The method comprises fine grinding the low-k dielectric layer with a grinding surface comprising bonded particles of abrasive material having a size of from about 1 to about 6 micrometers. Thereafter, the wafer can be polished by chemical mechanical polishing.
摘要翻译：从晶片去除低k电介质层以刷新晶片。低k电介质层的k值小于约3，包括硅，氧和碳。该方法包括用包含具有约1至约6微米尺寸的研磨材料的粘合颗粒的研磨表面来细磨低k电介质层。此后，可以通过化学机械抛光抛光晶片。

5. 发明申请

US20070190798A1 REMOVING A LOW-K DIELECTRIC LAYER FROM A WAFER 审中-公开
标题翻译：从WAFER中移除一个低K介质层
公开(公告)号：US20070190798A1
公开(公告)日：2007-08-16
申请号：US11737663
申请日：2007-04-19
申请人： Hong Wang , Krishna Vepa , Paul Miller
发明人： Hong Wang , Krishna Vepa , Paul Miller
IPC分类号： H01L21/302
CPC分类号： H01L21/31111 , H01L21/02079 , H01L21/31053 , Y10S438/911 , Y10S438/951
摘要： A low-k dielectric layer having a composition of silicon, oxygen and carbon, and optionally hydrogen, is removed from a test or production wafer to refresh the wafer. The low-k dielectric layer is removed by immersing a surface of the low-k dielectric layer in a first etching solution having a first composition that is believed to break the Si—O bonds in the dielectric layer; and immersing the surface of the low-k dielectric layer in a second etching solution having a second composition that is believed to break the Si—C bonds in the low-k dielectric layer.
摘要翻译：具有硅，氧和碳以及任选的氢的组成的低k电介质层从测试或生产晶片中去除以刷新晶片。通过将低k电介质层的表面浸入具有被认为破坏介电层中的Si-O键的第一组成的第一蚀刻溶液中来去除低k电介质层; 并将低k电介质层的表面浸渍在具有第二组分的第二蚀刻溶液中，该第二组分被认为会破坏低k电介质层中的Si-C键。

6. 发明申请

US20060160364A1 Refreshing wafers having low-k dielectric materials 失效
标题翻译：刷新具有低k介电材料的晶圆
公开(公告)号：US20060160364A1
公开(公告)日：2006-07-20
申请号：US11037647
申请日：2005-01-18
申请人： Hong Wang , Krishna Vepa , Paul Miller
发明人： Hong Wang , Krishna Vepa , Paul Miller
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/31111 , H01L21/02079 , H01L21/31053 , Y10S438/911 , Y10S438/951
摘要： A low-k dielectric layer having a composition of silicon, oxygen and carbon is removed from a wafer. The low-k dielectric layer is removed by exposing a surface of the low-k dielectric layer to an oxygen-containing gas to oxidized the surface. The oxidized surface is immersed in an etching solution having HF and H2SO4 to etch the low-k dielectric layer. The etched surface is exposed to at least one of (i) an etching solution having H2SO4 and H2O2, and (ii) an RF or microwave energized oxygen-containing gas, to remove the low-k dielectric layer from the wafer.
摘要翻译：从晶片去除具有硅，氧和碳组成的低k电介质层。通过将低k电介质层的表面暴露于含氧气体以氧化表面来去除低k电介质层。将氧化的表面浸入具有HF和H 2 SO 4 S 4的蚀刻溶液中以蚀刻低k电介质层。蚀刻表面暴露于（i）具有H 2 SO 4 H 2和H 2 O 2 O 2的蚀刻溶液中的至少一种和（ii）RF或微波激发的含氧气体，以从晶片去除低k电介质层。

7. 发明申请

US20220346349A1 METHOD AND APPARATUS OF USING A CELLULAR NETWORK TO SCHEDULE AND MOVE MATERIAL FROM A FIRST LOCATION TO A SECOND LOCATION 有权
公开(公告)号：US20220346349A1
公开(公告)日：2022-11-03
申请号：US17244423
申请日：2021-04-29
申请人： Paul Miller , Jim Beckford
发明人： Paul Miller , Jim Beckford
IPC分类号： A01K5/02 , H04L29/08
摘要： A method and apparatus for remotely controlling the selective delivery of an associate material from a first location to a second desirable location as provided. A primary application of the method and apparatus is the remote control of the delivery of deer food by a deer feeder for the purposes of hunting deer.

8. 发明授权

US09319350B2 Virtual address for virtual port 有权
标题翻译：虚拟端口的虚拟地址
公开(公告)号：US09319350B2
公开(公告)日：2016-04-19
申请号：US13091444
申请日：2011-04-21
申请人： Paul Miller , Aaron L Jenkins
发明人： Paul Miller , Aaron L Jenkins
IPC分类号： G06F15/16 , H04L12/931
CPC分类号： H04L49/35
摘要： A device to detect storage devices coupled to the device in response to receiving a query from a switch, include the storage devices in logical units, create virtual ports for the logical units, assign virtual addresses for the virtual ports, and send a response with the virtual addresses to switch.
摘要翻译：响应于从交换机接收到查询来检测耦合到设备的存储设备的设备包括逻辑单元中的存储设备，为逻辑单元创建虚拟端口，为虚拟端口分配虚拟地址，并且向要切换的虚拟地址。

9. 发明授权

US09110591B2 Memory resource provisioning using SAS zoning 有权
标题翻译：使用SAS分区的内存资源配置
公开(公告)号：US09110591B2
公开(公告)日：2015-08-18
申请号：US13092471
申请日：2011-04-22
申请人： Aaron L. Jenkins , Paul Miller , Balaji Natrajan
发明人： Aaron L. Jenkins , Paul Miller , Balaji Natrajan
IPC分类号： G06F15/173 , G06F3/06 , H04L29/08
CPC分类号： G06F3/0604 , G06F3/0631 , G06F3/0637 , G06F3/067 , G06F3/0689 , H04L67/1097
摘要： An example method for memory resource provisioning using SAS zoning can include a serial attached Small Computer System Interface (SCSI) (SAS) switch and a provisioning manager (PM) executing on the SAS switch. A plurality of servers are communicatively coupled to the SAS switch, each server executing an operating system (OS) having access to one or more OS volumes. A host provisioning agent (HPA) executes on the OS of each of the plurality of servers. A plurality of memory resources are communicatively coupled to the SAS switch. Each memory resource can have a number of physical hard drives. A first portion of the memory resources is associated with zone groups corresponding to the plurality of servers. A second portion of the memory resources is associated with a provisioning zone group (PZG) hidden from the plurality of servers but available to the PM.
摘要翻译：使用SAS分区的内存资源配置的示例方法可以包括在SAS交换机上执行的串行连接的小型计算机系统接口（SCSI）（SAS）交换机和配置管理器（PM）。多个服务器通信地耦合到SAS交换机，每个服务器执行具有访问一个或多个OS卷的操作系统（OS）。主机供应代理（HPA）在多个服务器中的每一个的OS上执行。多个存储器资源通信地耦合到SAS交换机。每个内存资源都可以有多个物理硬盘。存储器资源的第一部分与对应于多个服务器的区域组相关联。存储器资源的第二部分与从多个服务器隐藏的可用于PM的供应区组（PZG）相关联。

10. 发明授权

US08959374B2 Power management for devices in a data storage fabric 有权
标题翻译：数据存储架构中设备的电源管理
公开(公告)号：US08959374B2
公开(公告)日：2015-02-17
申请号：US13563122
申请日：2012-07-31
申请人： Paul Miller , Aaron L. Jenkins , Balaji Natrajan
发明人： Paul Miller , Aaron L. Jenkins , Balaji Natrajan
IPC分类号： G06F1/32
CPC分类号： G06F1/3203
摘要： A method of power management for devices in a data storage fabric is disclosed. The data storage fabric includes a PHY having a first power condition and a second power condition coupled to a power condition independent device on the data storage fabric. The power condition independent device detects a change in the power configuration of the PHY from the first power condition to the second power condition. The power condition independent device then changes its power state to a comparable power state preselected to correspond with the second power condition.
摘要翻译：公开了一种数据存储架构中的设备的电源管理方法。数据存储架构包括具有耦合到数据存储架构上与电力无关设备的第一功率状态和第二功率状态的PHY。电力状况独立设备检测PHY从第一功率状态到第二功率状态的功率配置的变化。电力状态独立设备然后将其功率状态改变为预先选择以对应于第二功率状态的可比功率状态。

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