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1. 发明申请

US20090178620A1 Process for Depositing Thin Layers on a Substrate in a Process Chamber of Adjustable Height 审中-公开
标题翻译：在可调节高度的工艺室中的基板上沉积薄层的方法
公开(公告)号：US20090178620A1
公开(公告)日：2009-07-16
申请号：US12411131
申请日：2009-03-25
申请人： Holger Juergensen , Gerhard Karl Strauch
发明人： Holger Juergensen , Gerhard Karl Strauch
IPC分类号： C23C16/54
CPC分类号： C23C16/45565 , C23C16/4412 , C23C16/45589 , C23C16/4585 , H01L21/68764 , H01L21/68771 , H01L21/68785
摘要： An apparatus for depositing thin layers on a substrate in a process chamber arranged in a reactor housing, the bottom of the process chamber consisting of a temperable substrate holder which can be rotatably driven about its vertical axis, and the cover of the chamber consisting of a gas inlet element. The cover extends parallel to the bottom and forms, together with its gas outlets arranged in a sieve-type manner, a gas exit surface which extends over the entire substrate bearing surface of the substrate holder, the process gas being introduced into the process chamber through the gas exit surface. The height of the process chamber is variable before the beginning of the deposition process and/or during the deposition process, which height is defined by the distance between the substrate bearing surface and the gas exit surface.
摘要翻译：一种用于在布置在反应器壳体中的处理室中的衬底上沉积薄层的装置，所述处理室的底部由可围绕其垂直轴线可旋转地驱动的可调节衬底保持器和由所述腔室的盖组成，进气口元件盖子平行于底部延伸并与其排列成筛子式的气体出口一起形成气体出口表面，该表面在衬底保持器的整个衬底承载表面上延伸，处理气体通过气体出口表面。处理室的高度在沉积过程开始之前和/或沉积过程中是可变的，该高度由衬底承载表面和气体出口表面之间的距离限定。

2. 发明申请

US20090025639A1 GAS INLET ELEMENT FOR A CVD REACTOR 失效
标题翻译：用于CVD反应器的气体入口元件
公开(公告)号：US20090025639A1
公开(公告)日：2009-01-29
申请号：US11814913
申请日：2006-01-05
申请人： Markus Reinhold , Peter Baumann , Gerhard Karl Strauch
发明人： Markus Reinhold , Peter Baumann , Gerhard Karl Strauch
IPC分类号： C23C16/54
CPC分类号： C23C16/45565 , C23C16/455 , C23C16/45512
摘要： The invention relates to a gas inlet element (2) for a CVD reactor with a chamber (4), which has a multitude of bottom-side outlet openings (23), via which a process gas introduced into the chamber (4) via edge-side access openings (10) exits into a process chamber (21) of the CVD reactor (1). In order to homogenize the gas composition, the invention provides that at least one mixing chamber arrangement (11, 12, 13) is situated upstream from the access openings (10), and at least two process gases are mixed with one another inside this mixing chamber arrangement.
摘要翻译：本发明涉及一种用于具有腔室（4）的CVD反应器的气体入口元件（2），其具有多个底部侧出口（23），经由该腔室（4）经由边缘（10）离开CVD反应器（1）的处理室（21）。为了均化气体组成，本发明提供了至少一个混合室装置（11,12,13）位于进入开口（10）的上游，并且至少两个处理气体在该混合中彼此混合室安排。

3. 发明授权

US06972050B2 Method for depositing in particular crystalline layers, and device for carrying out the method 失效
公开(公告)号：US06972050B2
公开(公告)日：2005-12-06
申请号：US10439195
申请日：2003-05-15
申请人： Michael Bremser , Martin Dauelsberg , Gerhard Karl Strauch
发明人： Michael Bremser , Martin Dauelsberg , Gerhard Karl Strauch
IPC分类号： C23C16/455 , C30B25/14 , H01L21/205 , C30B25/08
CPC分类号： C30B25/14 , C23C16/455
摘要： The invention relates to a method for depositing especially, crystalline layers onto especially, crystalline substrates, in a process chamber of a CVD reactor. At least one first and one second reaction gas are each led into a gas outlet area in an input area of the process chamber, by means of separate delivery lines. The gas outlet areas lie one above the other between the floor of the process chamber and the cover of the process chamber and have different heights. The first reaction gas flows out of the gas outlet area that is situated next to the process chamber floor, optionally together with a carrier gas. A carrier gas is added at least to the second reaction gas, which flows out of the gas outlet area lying further away from the process chamber floor. The flow parameters are selected in such a way that the second reaction gas is essentially only pyrolytically decomposed in the inlet area and the products of decomposition diffuse crosswise to the direction of Dow of the gases to a substrate located on the process chamber floor, in a deposition area which is located downstream of the input area. Upon reaching said substrate, said products of decomposition condense to form a layer, together with products of decomposition of the first reaction layer. The invention aims to ensure that the decomposition of the organometallic products of decomposition takes place essentially only in the inlet area, even in the case of longer deposition areas, and to ensure that the partial pressures of the products of decomposition (depletion) in the gas phase above the deposition area maintain an essentially linear course. To this end, the invention provides that the kinematic viscosity of the carrier gas that is added to the second reaction gas is adjusted, especially by mixing two gases which differconsiderably in terms of their kinematic viscosity, in such a way that the quotient of Reynolds numbers in the two gas outlet areas is approximately one for essentially approximately identical average gas speeds.

4. 发明授权

US06905548B2 Device for the deposition of crystalline layers on crystalline substrates 失效
标题翻译：用于在结晶基底上沉积结晶层的装置
公开(公告)号：US06905548B2
公开(公告)日：2005-06-14
申请号：US10378496
申请日：2003-03-03
申请人： Holger Jürgensen , Gerhard Karl Strauch , Johannes Käppeler
发明人： Holger Jürgensen , Gerhard Karl Strauch , Johannes Käppeler
IPC分类号： C23C16/44 , C30B25/02 , C30B25/14 , C23C16/00 , H01L1/00
CPC分类号： C23C16/45561 , C23C16/4401 , C30B25/02 , C30B25/14
摘要： The invention relates to a device for the deposition of in particular, crystalline layers on one or several, in particular, equally crystalline substrates, comprising a process chamber, arranged in a reactor housing, which may be charged with the substrates from above, by a reactor housing opening which may be sealed by a cover. The reactor housing opening opens out into a glove box, in particular flushed with highly pure gas and connects electricity, liquid or gas supply lines to the cover. According to the invention, the connection of supply lines for electricity, fluid or gas sources arranged outside the glove box to the cover of the reactor housing arranged within the glove box may be improved, whereby the electricity, fluid or gas supply lines run freely, from outside the glove box, through a flexible tube which is sealed atone end to a flange arrangement rigidly fixed to the cover and sealed at the other end to an opening in the glove box wall.
摘要翻译：本发明涉及一种用于特别沉积在一个或多个特别是同等结晶的基底上的结晶层的装置，其包括设置在反应器壳体中的处理室，该反应器壳体可以从上方装入基板，通过反应器壳体开口，其可由盖子密封。反应器壳体开口打开到手套箱中，特别是用高纯度气体冲洗并将电力，液体或气体供应管线连接到盖子上。根据本发明，可以改善布置在手套箱外部的用于电力，流体或气体源的供给管线与布置在手套箱内的反应堆壳体的盖的连接，由此电力，流体或气体供应管线自由运行，从手套箱的外部通过柔性管，该柔性管在一端被密封到刚性地固定到盖上并且在另一端被密封在手套箱壁中的开口的凸缘装置。

5. 发明申请

US20130040054A1 COATING DEVICE AND METHOD FOR OPERATING A COATING DEVICE HAVING A SHIELDING PLATE 审中-公开
标题翻译：涂覆装置和操作具有屏蔽板的涂层装置的方法
公开(公告)号：US20130040054A1
公开(公告)日：2013-02-14
申请号：US13576942
申请日：2011-02-08
申请人： Gerhard Karl Strauch , Walter Franken , Marcel Kollberg , Florenz Kittel , Markus Gersdorff , Johannes Käppeler
发明人： Gerhard Karl Strauch , Walter Franken , Marcel Kollberg , Florenz Kittel , Markus Gersdorff , Johannes Käppeler
IPC分类号： C23C16/04 , C23C16/458 , C23C16/455
CPC分类号： C23C14/541 , C23C14/564 , C23C16/4401 , C23C16/4404 , C23C16/46 , C23C16/463
摘要： A device for treating a substrate (12) includes a conveying device (13) for loading and unloading substrates or masks (10, 10′, 10″, 10″′) into and from a process chamber (1) through loading openings (6, 7). A shielding plate (11), used to shield the substrate (12) or the mask (10) from the influence of heat is moved between a shielding position and a storage position during the substrate treatment and, after the substrate (12) is treated, from the storage position back into the shielding position. In the storage position, the shielding plate (11) is situated inside a storage chamber (2, 3).
摘要翻译：一种用于处理基板（12）的装置，包括一个输送装置（13），用于通过装载开口（6）将基板或掩模（10,10'，10“，10”）装入和卸载处理室，7）。用于屏蔽基板（12）或掩模（10）不受热影响的屏蔽板（11）在基板处理期间在屏蔽位置和存储位置之间移动，并且在处理基板（12）之后，从存储位置回到屏蔽位置。在存储位置，屏蔽板（11）位于储存室（2,3）的内部。

6. 发明授权

US08349081B2 Gas distributor with pre-chambers arranged in planes 有权
标题翻译：气体分配器，预先安置在飞机上
公开(公告)号：US08349081B2
公开(公告)日：2013-01-08
申请号：US11815091
申请日：2006-01-05
申请人： Markus Reinhold , Peter Baumann , Gerhard Karl Strauch
发明人： Markus Reinhold , Peter Baumann , Gerhard Karl Strauch
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： C23C16/45565 , C23C16/45574
摘要： A gas distributor for a CVD or OVPD reactor comprises two or more gas volumes (1, 2) into each of which opens a feed pipe (3, 4) for a process gas, each gas volume (1, 2) being connected to a plurality of corresponding process gas outlets (6, 7) which open into the bottom (5) of the gas distributor. In order to increase the homogeneity of the gas composition, the two gas volumes (1, 2) comprise pre-chambers (10, 10′, 11) located in a first common plane (8) and a plurality of gas distribution chambers (12, 13) each associated with a gas volume are provided in a second plane (9′) adjacent to the bottom of the gas distributor. The pre-chambers (10, 10′, 11) and gas distribution chambers (12, 13) associated with each gas volume (1, 2) are connected with connection channels (14, 15).
摘要翻译：用于CVD或OVPD反应器的气体分配器包括两个或更多个气体体积（1,2），每个气体体积（1,2）打开用于处理气体的进料管（3,4），每个气体体积（1,2）连接到多个对应的处理气体出口（6,7），其通向气体分配器的底部（5）。为了增加气体组成的均匀性，两个气体体积（1,2）包括位于第一公共平面（8）和多个气体分配室（12）中的预置室（10,10'，11），13）设置在与气体分配器的底部相邻的第二平面（9'）中。与每个气体体积（1,2）相关联的前室（10,10'，11）和气体分配室（12,13）与连接通道（14,15）连接。

7. 发明授权

US08298337B2 Gas inlet element for a CVD reactor 失效
标题翻译：用于CVD反应器的气体入口元件
公开(公告)号：US08298337B2
公开(公告)日：2012-10-30
申请号：US11814913
申请日：2006-01-05
申请人： Markus Reinhold , Peter Baumann , Gerhard Karl Strauch
发明人： Markus Reinhold , Peter Baumann , Gerhard Karl Strauch
IPC分类号： C23C16/00 , C23C16/44 , C23C16/455 , H01L21/306
CPC分类号： C23C16/45565 , C23C16/455 , C23C16/45512
摘要： The invention relates to a gas inlet element (2) for a CVD reactor with a chamber (4), which has a multitude of bottom-side outlet openings (23), via which a process gas introduced into the chamber (4) via edge-side access openings (10) exits into a process chamber (21) of the CVD reactor (1). In order to homogenize the gas composition, the invention provides that at least one mixing chamber arrangement (11, 12, 13) is situated upstream from the access openings (10), and at least two process gases are mixed with one another inside this mixing chamber arrangement.
摘要翻译：本发明涉及一种用于具有腔室（4）的CVD反应器的气体入口元件（2），其具有多个底部侧出口（23），经由该腔室（4）经由边缘引入腔室（4）的工艺气体（10）离开CVD反应器（1）的处理室（21）。为了均化气体组成，本发明提供了至少一个混合室装置（11,12,13）位于进入开口（10）的上游，并且至少两个处理气体在该混合中彼此混合室安排。

8. 发明授权

US07524532B2 Process for depositing thin layers on a substrate in a process chamber of adjustable height 有权
标题翻译：在可调节高度的处理室中的衬底上沉积薄层的工艺
公开(公告)号：US07524532B2
公开(公告)日：2009-04-28
申请号：US10967776
申请日：2004-10-18
申请人： Holger Jurgensen , Gerhard Karl Strauch
发明人： Holger Jurgensen , Gerhard Karl Strauch
IPC分类号： C23C16/00
CPC分类号： C23C16/45565 , C23C16/4412 , C23C16/45589 , C23C16/4585 , H01L21/68764 , H01L21/68771 , H01L21/68785
摘要： A process for depositing thin layers on a substrate in a process chamber arranged in a reactor housing, the bottom of the process chamber consisting of a temperable substrate holder which can be rotatably driven about its vertical axis, and the cover of the chamber consisting of a gas inlet element. The cover extends parallel to the bottom and forms, together with its gas outlets arranged in a sieve-type manner, a gas exit surface which extends over the entire substrate bearing surface of the substrate holder, the process gas being introduced into the process chamber through the gas exit surface. The process includes the step of varying the height of the process chamber, which is defined by the distance between the substrate bearing surface and the gas exit surface, before the beginning of the deposition process and/or during the deposition process.
摘要翻译：一种用于在布置在反应器壳体中的处理室中的衬底上沉积薄层的工艺，处理室的底部由可围绕其垂直轴线可旋转地驱动的可调节衬底保持器和由腔体的盖组成，进气口元件盖子平行于底部延伸并与其排列成筛子式的气体出口一起形成气体出口表面，该表面在衬底保持器的整个衬底承载表面上延伸，处理气体通过气体出口表面。该方法包括在沉积过程开始和/或沉积过程之前改变由衬底承载表面和气体出口表面之间的距离限定的处理室的高度的步骤。

9. 发明申请

US20120149212A1 CVD METHOD AND CVD REACTOR 有权
标题翻译： CVD方法和CVD反应器
公开(公告)号：US20120149212A1
公开(公告)日：2012-06-14
申请号：US13391609
申请日：2010-08-04
申请人： Gerhard Karl Strauch
发明人： Gerhard Karl Strauch
IPC分类号： H01L21/31 , C23C16/458
CPC分类号： C23C16/4412
摘要： The invention relates to a device and a method for depositing semiconductor layers, in particular made of a plurality of components on one or more substrates (21) contacting a susceptor (2), wherein process gases can be introduced into the process chamber (1) through flow channels (15, 16; 18) of a gas inlet organ (8), together with a carrier gas, said carrier gas permeating the process chamber (1) substantially parallel to the susceptor and exits through a gas outlet organ (7), wherein the products of decomposition build up the process gases as a coating at least in regions on the substrate surface and on the surface of the gas outlet organ (7) disposed downstream of the susceptor (2) at a distance (D) from the downstream edge (21) thereof. In order to deposit contamination-free layers in sequential process steps without intermediate replacement or intermediate cleaning of the gas outlet organ, according to the invention the distance (D) is great enough to prevent products of decomposition outgassing from the coating of the gas outlet organ (7) at the second process temperature from reaching the substrate (21) by counterflow diffusion.
摘要翻译：本发明涉及一种用于沉积半导体层的器件和方法，特别是由一个或多个接触基座（2）的衬底（21）上的多个部件制成，其中工艺气体可被引入处理室（1）通过气体入口器官（8）的流动通道（15,16; 18）与载气一起，所述载气渗透到处理室（1），基本上平行于基座并通过气体出口器（7）离开，其中分解产物至少在衬底表面上的区域和位于基座（2）下游的气体出口器具（7）的表面上至少形成处理气体，距离（D）距离下游边缘（21）。为了在连续的工艺步骤中沉积无污染层，而没有中间更换或中间清洁气体出口器官，根据本发明，距离（D）足够大以防止从气体出口器官的涂层分解出气的产物（7）在第二工艺温度下通过逆流扩散到达衬底（21）。

10. 发明授权

US07709398B2 Process and apparatus for depositing semiconductor layers using two process gases, one of which is preconditioned 失效
标题翻译：使用两种处理气体沉积半导体层的方法和装置，其中一种是预处理的
公开(公告)号：US07709398B2
公开(公告)日：2010-05-04
申请号：US11262874
申请日：2005-10-31
申请人： Gerhard Karl Strauch , Johannes Kaeppeler , Markus Reinhold , Bernd Schulte
发明人： Gerhard Karl Strauch , Johannes Kaeppeler , Markus Reinhold , Bernd Schulte
IPC分类号： H01L21/31
CPC分类号： C23C16/45514 , C23C16/303 , C23C16/452 , C23C16/45574 , Y10S438/905
摘要： The invention relates to a method and device for depositing at least one layer, particularly a semiconductor layer, onto at least one substrate, which is situated inside a process chamber of a reactor while being supported by a substrate holder. The layer is comprised of at least two material components provided in a fixed stoichiometric ratio, which are each introduced into the reactor in the form of a first and a second reaction gas, and a portion of the decomposition products form the layer, whereby the supply of the first reaction gas, which has a low thermal activation energy, determines the growth rate of the layer, and the second reaction gas, which has a high thermal activation energy, is supplied in excess and is preconditioned, in particular, by an independent supply of energy. The first reaction gas flows in a direction toward the substrate holder through a multitude of openings, which are distributed over a surface of a gas inlet element, said surface being located opposite the substrate holder. According to the invention, the second process gas is preconditioned with a plasma before entering the process chamber, and it enters the process chamber at the edge of the substrate holder directly thereabove and flows parallel to the substrate holder surface.
摘要翻译：本发明涉及一种用于将至少一层，特别是半导体层沉积在至少一个衬底上的方法和装置，所述至少一个衬底位于反应器的处理室内，同时由衬底保持器支撑。该层由以固定的化学计量比提供的至少两种材料组分组成，其以第一和第二反应气体的形式引入反应器，并且一部分分解产物形成层，由此供应具有低热活化能的第一反应气体决定层的生长速率，并且具有高热活化能的第二反应气体被过量供应并且被预处理，特别是由独立的供应能源。第一反应气体通过分布在气体入口元件的表面上的多个开口朝向衬底保持器的方向流动，所述表面位于衬底保持器相对的位置。根据本发明，第二工艺气体在进入处理室之前用等离子体预处理，并且它直接进入衬底保持器的边缘处的处理室，并平行于衬底保持器表面流动。

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