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1. 发明申请

US20160217976A1 VACUUM PROCESSING APPARATUS 审中-公开
标题翻译：真空加工设备
公开(公告)号：US20160217976A1
公开(公告)日：2016-07-28
申请号：US14846732
申请日：2015-09-04
申请人： Hitachi High-Technologies Corporation
发明人： Takashi UEMURA , Susumu TAUCHI , Kohei SATO , Eiji MARUYAMA
IPC分类号： H01J37/32 , C23C16/44 , C23C16/50
CPC分类号： C23C16/4412 , C23C16/4401 , C23C16/46 , C23C16/505 , H01J37/32715 , H01J37/32743 , H01J37/32788 , H01J37/32899 , H01L21/6719
摘要： A vacuum processing apparatus with excellent processing uniformity and capable of effectively performing routine and non-routine maintenance even when an object to be processed has an increased diameter is provided. In the vacuum processing apparatus having a vacuum transfer chamber, this apparatus comprises a lower vessel having a cylindrical shape, a sample stage unit including a sample stage and a ring-shaped sample stage base having support beams disposed axisymmetric with respect to a central axis of the sample stage, an upper vessel having a cylindrical shape, and a moving mechanism which is fixed to the sample stage base and is capable to move the sample stage unit movable in a vertical direction and in a horizontal direction.
摘要翻译：提供了具有优异的加工均匀性并且即使当待处理物体具有增加的直径时也能够有效地执行常规和非常规维护的真空处理设备。在具有真空传送室的真空处理设备中，该设备包括具有圆柱形形状的下部容器，包括样品台的样品台单元和具有相对于中心轴线对称布置的支撑梁的环形样品台架基座样品台，具有圆柱形状的上容器，以及移动机构，其固定到样品台基座，并且能够使样本台单元沿垂直方向和水平方向移动。

2. 发明申请

US20180211893A1 VACUUM PROCESSING APPARATUS 审中-公开
公开(公告)号：US20180211893A1
公开(公告)日：2018-07-26
申请号：US15715717
申请日：2017-09-26
申请人： HITACHI HIGH-TECHNOLOGIES CORPORATION
发明人： Takamasa ICHINO , Kohei SATO
IPC分类号： H01L21/66 , H01L21/67 , H01L21/673
摘要： A sample stage which is disposed inside a vacuum processing chamber and on which a wafer to be processed is placed on an upper surface thereof includes a metallic base material, a metallic substrate insulated from the base material below the base material with an insulating member interposed therebetween, and a base which is disposed below the substrate, has a space set to an atmospheric pressure therein, and is connected to the substrate by an opening above the space being covered, the insulating member has a ring-shaped member made of ceramic with a seal member airtightly sealing a part between a space of an inner peripheral side communicating with an outside of the vacuum vessel and set to the atmospheric pressure and an inside of the processing chamber interposed between the base material and an outer peripheral side portion of the substrate, a plurality of temperature sensors installed to penetrate the substrate and inserted into the base material is included, and the base material, the insulating member, and the substrate are configured to be integrally removable to an outside of the processing chamber in a state in which the plurality of temperature sensors is installed.

3. 发明申请

US20150214014A1 VACUUM PROCESSING APPARATUS 审中-公开
标题翻译：真空加工设备
公开(公告)号：US20150214014A1
公开(公告)日：2015-07-30
申请号：US14468397
申请日：2014-08-26
申请人： Hitachi High-Technologies Corporation
发明人： Kohei SATO , Akitaka MAKINO , Kazuumi TANAKA , Yusaku SAKKA
IPC分类号： H01J37/32 , H01L21/67
CPC分类号： H01J37/32082 , H01J37/32733 , H01J37/32899 , H01L21/67184 , H01L21/6719
摘要： A vacuum processing apparatus that can excellently perform uniform processing and can efficiently perform regular maintenance and occasional maintenance even in the case where the diameter of a workpiece is increased. A vacuum processing apparatus having a vacuum transport chamber includes: a lower container in a cylindrical shape; a sample stage unit including a sample stage and a ring-shaped sample stage base having a support beam disposed in axial symmetry with respect to the center axis of the sample stage; an upper container in a cylindrical shape; and a moving unit that is fixed to the sample stage base and moves the sample stage unit in the vertical direction and in the horizontal direction.
摘要翻译：即使在工件的直径增大的情况下，也能够优异地进行均匀的加工，能够有效地进行定期的维护和偶然的维护的真空处理装置。具有真空输送室的真空处理装置包括：筒状的下部容器; 样品台单元，包括样品台和具有相对于样品台的中心轴线对称设置的支撑梁的环形样品台基座; 圆柱形的上部容器; 以及移动单元，其被固定到样品台基底，并使样品台单元沿垂直方向和水平方向移动。

4. 发明申请

US20210233744A1 PLASMA PROCESSING APPARATUS 有权
公开(公告)号：US20210233744A1
公开(公告)日：2021-07-29
申请号：US16646696
申请日：2019-02-08
申请人： Hitachi High-Technologies Corporation
发明人： Takamasa ICHINO , Kohei SATO , Kazunori NAKAMOTO
IPC分类号： H01J37/32
摘要： A plasma processing apparatus includes a processing chamber in which a wafer 1 is processed by using plasma, a radio-frequency power supply that supplies radio-frequency power for generating the plasma, a sample table 2 which is arranged in the processing chamber and in which the wafer 1 is mounted, and a DC power supply 106 which is electrically connected to the sample table 2 and which causes the sample table 2 to generate a suction force. The sample table 2 includes a protruded portion 201a that sucks the wafer 1 by the suction force and a level different portion 201b protruding from a lower portion of the protruded portion 201a. A ring 5 that can be in contact with a lower surface of the wafer 1 is provided outside the protruded portion 201a. A space portion 7 formed by the wafer 1, the protruded portion 201a, and the ring 5 is sealed in a state in which the wafer 1 is sucked to an upper surface of the protruded portion 201a of the sample table 2.

5. 发明申请

US20200083026A1 PLASMA PROCESSING DEVICE 审中-公开
公开(公告)号：US20200083026A1
公开(公告)日：2020-03-12
申请号：US16561785
申请日：2019-09-05
申请人： Hitachi High-Technologies Corporation
发明人： Takamasa ICHINO , Kohei SATO , Kazunori NAKAMOTO , Kenetsu YOKOGAWA
IPC分类号： H01J37/32 , H01L21/67 , H01L21/683
摘要： A plasma processing device in which plasma processing uniformity is improved up to an outer peripheral portion of a wafer and the number of non-defective devices that can be manufactured from one wafer is increased. The plasma processing device includes a vacuum container; a mounting table, a susceptor ring that covers an outer peripheral portion of an electrode base material, and an insulation ring covered by the susceptor ring and surrounding the electrode base material, and thin film electrode formed on an upper surface and a part of a surface facing the outer periphery of the electrode base material; a first high frequency power applied to the electrode base material a second high frequency power applied to the thin film electrode; a plasma generating unit that generates plasma on an upper portion of the mounting table inside the vacuum container; and a control unit.

6. 发明申请

US20190164725A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 审中-公开
公开(公告)号：US20190164725A1
公开(公告)日：2019-05-30
申请号：US16135437
申请日：2018-09-19
申请人： HITACHI HIGH-TECHNOLOGIES CORPORATION
发明人： Masatoshi KAWAKAMI , Kohei SATO , Yasushi SONODA , Masahiro NAGATANI , Makoto KASHIBE
IPC分类号： H01J37/32
摘要： There is provided a plasma processing apparatus and a plasma processing method for efficiently processing a wafer using plasma. The plasma processing apparatus includes two processing steps and a bridging step between the two processing steps. The plasma processing apparatus includes: a first gas supply unit which supplies a processing-use gas into the processing chamber during the processing step; a second gas supply unit which supplies a bridging-use gas into the processing chamber during the bridging step; a gas switching unit for switching the supply of the processing-use gas from the first gas supply unit and the bridging-use gas from the second gas supply unit to the processing chamber in transition between the two processing steps and the bridging step; and a control part which is configured to regulate a flow rate of the bridging-use gas to be supplied during the bridging step to a flow rate regarded equal to a supply amount of the processing-use gas to be supplied during a succeeding processing step out of the two processing steps.

7. 发明申请

US20150248994A1 PLASMA PROCESSING APPARATUS 审中-公开
标题翻译：等离子体加工设备
公开(公告)号：US20150248994A1
公开(公告)日：2015-09-03
申请号：US14463685
申请日：2014-08-20
申请人： Hitachi High-Technologies Corporation
发明人： Takumi TANDOU , Kohei SATO , Hiromichi KAWASAKI , Akitaka MAKINO
IPC分类号： H01J37/32 , H01L21/683 , H01L21/67
CPC分类号： H01J37/32724 , H01J37/32678 , H01L21/6831
摘要： A plasma processing apparatus, comprising a processing chamber within a vacuum chamber, and a sample stage arranged within the processing chamber with a sample to be processed placed on its top surface, wherein plasma is formed in the processing chamber to perform processing of the sample, wherein the sample stage is provided with an electrostatic chuck which is provided with film electrodes to which power for attraction of the sample is supplied, and upper and lower plate-like sintered bodies joined mutually with the electrodes interposed between them from above and below, and the lower sintered body has a dielectric constant higher than that of the upper sintered body.
摘要翻译：一种等离子体处理装置，包括真空室内的处理室和布置在处理室内的待处理样品放置在其顶表面上的样品台，其中在处理室中形成等离子体以进行样品处理，其中，所述样品台设置有静电卡盘，所述静电卡盘设置有供给所述样品的吸引力的膜电极，并且上下板状烧结体与从其上下插入的电极相互连接，以及下部烧结体的介电常数高于上部烧结体的介电常数。

8. 发明申请

US20190267219A1 VACUUM PROCESSING APPARATUS 审中-公开
公开(公告)号：US20190267219A1
公开(公告)日：2019-08-29
申请号：US16111752
申请日：2018-08-24
申请人： HITACHI HIGH-TECHNOLOGIES CORPORATION
发明人： Takashi UEMURA , Takamasa ICHINO , Kazunori NAKAMOTO , Kohei SATO
IPC分类号： H01J37/32
摘要： Provided is a vacuum processing apparatus that improves an operation rate or efficiency of processing. The vacuum processing apparatus includes: a cylindrical pedestal which is disposed below a base plate that constitutes a specimen stage and is made of a metal, whose internal space is under an atmospheric pressure, and which is connected to the base plate in a state in which the base plate, and a base member and an insulating member fastened to the base plate are placed; a plate-shaped beam part which is disposed in the space of the pedestal with a gap from a lower surface of the base plate, and extends outward from the center of the space in a T or Y shape; a plurality of pins that pass through the beam part, the base plate, the insulating member, and the base member, support the specimen on tips thereof on an upper side of the specimen stage, and vertically move the specimen; a pin drive unit that is mounted on a lower surface of the center of the beam part; and a seal that is disposed around a through-hole through which each of the plurality of pins passes, and airtightly seals the inside and the outside.

9. 发明申请

US20180277402A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 审中-公开
公开(公告)号：US20180277402A1
公开(公告)日：2018-09-27
申请号：US15719149
申请日：2017-09-28
申请人： HITACHI HIGH-TECHNOLOGIES CORPORATION
发明人： Masatoshi KAWAKAMI , Motohiro TANAKA , Yasushi SONODA , Kohei SATO , Naoki YASUI
IPC分类号： H01L21/67 , H01J37/32
CPC分类号： H01L21/67069 , H01J37/32449 , H01J37/32715 , H01J2237/334
摘要： Provided is a plasma processing apparatus or method in which a procedure containing processing steps of supplying a predetermined amount of processing gas into a processing chamber disposed in a vacuum vessel through a gas supply unit, and processing a wafer placed on a sample table disposed in the processing chamber by generating plasma in the processing chamber using the processing gas supplied on each different condition. The procedure includes a first transition step of adjusting and supplying the rare gas to make a pressure of the rare gas equal to a condition of the processing gas used in the former processing step, and a second transition step of adjusting and supplying the rare gas after the first transition step such that a pressure and a flow rate of the rare gas come to be equal to a condition of the processing gas used in the later processing step.

10. 发明申请

US20150083329A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 有权
标题翻译：等离子体加工设备和等离子体处理方法
公开(公告)号：US20150083329A1
公开(公告)日：2015-03-26
申请号：US14557838
申请日：2014-12-02
申请人： HITACHI HIGH-TECHNOLOGIES CORPORATION
发明人： Kohei SATO , Kazunori NAKAMOTO , Yutaka OMOTO
IPC分类号： H01L21/67 , H01L21/683
CPC分类号： H01L21/67069 , H01J37/32577 , H01J37/32697 , H01J37/32715 , H01J37/32724 , H01L21/6833
摘要： In a plasma processing apparatus including a processing room disposed in a vacuum vessel, a sample stage located in the processing room, a dielectric film disposed on the top surface of the sample stage and serving as the sample mounting surface of the sample stage, and a plurality of electrodes embedded in the dielectric film for chucking the sample to the dielectric film when supplied with electric power, a part of the sample is chucked by supplying electric power to at least one of the electrodes while the sample is mounted on the sample stage; the sample is heated up to a predetermined temperature; a larger part of the sample is chucked by supplying electric power to the other of the electrodes; and the processing of the sample using the plasma is initiated.
摘要翻译：在包括设置在真空容器中的处理室的等离子体处理装置中，位于处理室中的样品台，设置在样品台的顶表面上并用作样品台的样品安装表面的电介质膜，以及多个电极嵌入在电介质膜中，用于在供电时将样品夹持到电介质膜上，一部分样品通过在将样品安装在样品台上时向至少一个电极供电来夹持; 将样品加热至预定温度; 通过向另一个电极提供电力来吸收较大部分的样品; 并且开始使用等离子体的样品的处理。

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