专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20100219359A1 SIGNAL WAVEFORM MEASURING APPARATUS AND MEASURING METHOD 有权
标题翻译：信号波形测量装置和测量方法
公开(公告)号：US20100219359A1
公开(公告)日：2010-09-02
申请号：US12550895
申请日：2009-08-31
申请人： Hiroyasu FUJIWARA , Tadashi Kawazoe , Motoichi Ohtsu
发明人： Hiroyasu FUJIWARA , Tadashi Kawazoe , Motoichi Ohtsu
IPC分类号： H01J40/14
CPC分类号： G01J11/00
摘要： A signal waveform measuring apparatus 1A is configured from: a signal optical system 11, a reference optical system 16, a time difference setting unit 12 setting a time difference between signal light L1 and reference light L2, a wavelength conversion element 20 including an aggregate of crystals of a dye molecule and generating converted light L5, which has been wavelength-converted to a shorter wavelength than incident light made incident on the crystal aggregate, at an intensity proportional to an r-th power (r>1) of the intensity of the incident light, a photodetector 30 detecting the converted light L5, generated at the element 20 at the intensity that is in accordance with the intensity of the signal light L1, the intensity of the reference light L2, and the time difference between the two, and a signal waveform analyzer 40 performing analysis of the detection result of the converted light L5 and thereby acquiring a time waveform of the signal light L1. A signal waveform measuring apparatus and a measuring method that enable a time waveform of signal light to be measured with good precision by a simple configuration are thereby realized.
摘要翻译：信号波形测量装置1A由信号光学系统11，参考光学系统16，设置信号光L1和参考光L2之间的时间差的时差设定单元12构成，波长转换元件20包括并且以与入射到晶体聚集体上的入射光波长转换为更短波长的转换光L5的强度成比例的第r次幂（r> 1）入射光，检测在元件20处以与信号光L1的强度相关的强度，参考光L2的强度和两者之间的时间差产生的转换光L5的光电检测器30，以及信号波形分析器40，对转换光L5的检测结果进行分析，从而获取信号光L1的时间波形。从而实现了通过简单的结构实现以高精度测量信号光的时间波形的信号波形测量装置和测量方法。

2. 发明授权

US08183514B2 Signal waveform measuring apparatus and method comprising a wavelength conversion element 有权
标题翻译：包括波长转换元件的信号波形测量装置和方法
公开(公告)号：US08183514B2
公开(公告)日：2012-05-22
申请号：US12550895
申请日：2009-08-31
申请人： Hiroyasu Fujiwara , Tadashi Kawazoe , Motoichi Ohtsu
发明人： Hiroyasu Fujiwara , Tadashi Kawazoe , Motoichi Ohtsu
IPC分类号： H03F3/08 , G02F1/35
CPC分类号： G01J11/00
摘要： A signal waveform measuring apparatus 1A is configured from: a signal optical system 11, a reference optical system 16, a time difference setting unit 12 setting a time difference between signal light L1 and reference light L2, a wavelength conversion element 20 including an aggregate of crystals of a dye molecule and generating converted light L5, which has been wavelength-converted to a shorter wavelength than incident light made incident on the crystal aggregate, at an intensity proportional to an r-th power (r>1) of the intensity of the incident light, a photodetector 30 detecting the converted light L5, generated at the element 20 at the intensity that is in accordance with the intensity of the signal light L1, the intensity of the reference light L2, and the time difference between the two, and a signal waveform analyzer 40 performing analysis of the detection result of the converted light L5 and thereby acquiring a time waveform of the signal light L1. A signal waveform measuring apparatus and a measuring method that enable a time waveform of signal light to be measured with good precision by a simple configuration are thereby realized.
摘要翻译：信号波形测量装置1A由信号光学系统11，参考光学系统16，设置信号光L1和参考光L2之间的时间差的时差设定单元12构成，波长转换元件20包括并且以与入射到晶体聚集体上的入射光波长转换为更短波长的转换光L5的强度成比例的第r次幂（r> 1）入射光，检测在元件20处以与信号光L1的强度相关的强度，参考光L2的强度和两者之间的时间差产生的转换光L5的光电检测器30，以及信号波形分析器40，对转换光L5的检测结果进行分析，从而获取信号光L1的时间波形。从而实现了通过简单的结构实现以高精度测量信号光的时间波形的信号波形测量装置和测量方法。

3. 发明授权

US07764421B2 Wavelength-converted light generating apparatus and generating method 有权
标题翻译：波长转换发光装置及其生成方法
公开(公告)号：US07764421B2
公开(公告)日：2010-07-27
申请号：US12410871
申请日：2009-03-25
申请人： Hiroyasu Fujiwara , Motoichi Ohtsu , Tadashi Kawazoe
发明人： Hiroyasu Fujiwara , Motoichi Ohtsu , Tadashi Kawazoe
IPC分类号： G02F1/35
CPC分类号： G02F1/3501 , G02F1/355 , G02F1/37
摘要： A wavelength-converted light generating apparatus 1A includes: an excitation light source 10 supplying excitation light L0 of a predetermined wavelength; and a wavelength conversion element 20, in which an aggregate 22 of crystals of a dye molecule is held by a holding substrate 21 and which, by incidence of the excitation light L0, generates converted light L1 that has been wavelength-converted. The excitation light source 10 supplies the excitation light L0 of a wavelength longer than an absorption edge of the dye molecule to the wavelength conversion element 20. The wavelength conversion element 20, by incidence of the excitation light L0 on the crystal aggregate 22, generates and outputs the converted light (for example, visible light) L1 that has been wavelength-converted to a shorter wavelength than the excitation light (for example, near-infrared light) L0. A wavelength-converted light generating apparatus and generating method capable of favorably generating light of a shorter wavelength than incident light of a predetermined wavelength by wavelength conversion is thus realized.
摘要翻译：波长转换光产生装置1A包括：提供预定波长的激发光L0的激发光源10; 以及波长转换元件20，其中染料分子的晶体的聚集体22由保持基板21保持，并且通过激发光L0的入射产生已被波长转换的转换光L1。激发光源10将比染料分子的吸收端长的波长的激发光L0提供给波长转换元件20.波长转换元件20通过在晶体聚集体22上的激发光L0的入射产生将已被波长转换的转换光（例如可见光）L1输出到比激发光（例如近红外光）L0更短的波长。因此实现了通过波长转换有利地产生比预定波长的入射光更短波长的光的波长转换光产生装置和产生方法。

4. 发明申请

US20090257114A1 WAVELENGTH-CONVERTED LIGHT GENERATING APPARATUS AND GENERATING METHOD 有权
标题翻译：波长转换光产生装置和发生方法
公开(公告)号：US20090257114A1
公开(公告)日：2009-10-15
申请号：US12410871
申请日：2009-03-25
申请人： Hiroyasu Fujiwara , Motoichi Ohtsu , Tadashi Kawazoe
发明人： Hiroyasu Fujiwara , Motoichi Ohtsu , Tadashi Kawazoe
IPC分类号： G02F1/35
CPC分类号： G02F1/3501 , G02F1/355 , G02F1/37
摘要： A wavelength-converted light generating apparatus 1A includes: an excitation light source 10 supplying excitation light L0 of a predetermined wavelength; and a wavelength conversion element 20, in which an aggregate 22 of crystals of a dye molecule is held by a holding substrate 21 and which, by incidence of the excitation light L0, generates converted light L1 that has been wavelength-converted. The excitation light source 10 supplies the excitation light L0 of a wavelength longer than an absorption edge of the dye molecule to the wavelength conversion element 20. The wavelength conversion element 20, by incidence of the excitation light L0 on the crystal aggregate 22, generates and outputs the converted light (for example, visible light) L1 that has been wavelength-converted to a shorter wavelength than the excitation light (for example, near-infrared light) L0. A wavelength-converted light generating apparatus and generating method capable of favorably generating light of a shorter wavelength than incident light of a predetermined wavelength by wavelength conversion is thus realized.
摘要翻译：波长转换光产生装置1A包括：提供预定波长的激发光L0的激发光源10; 以及波长转换元件20，其中染料分子的晶体的聚集体22由保持基板21保持，并且通过激发光L0的入射产生已被波长转换的转换光L1。激发光源10将比染料分子的吸收端长的波长的激发光L0提供给波长转换元件20.波长转换元件20通过在晶体聚集体22上的激发光L0的入射产生将已被波长转换的转换光（例如可见光）L1输出到比激发光（例如近红外光）L0更短的波长。因此实现了通过波长转换有利地产生比预定波长的入射光更短波长的光的波长转换光产生装置和产生方法。

5. 发明授权

US08912079B2 Compound semiconductor deposition method and apparatus 有权
标题翻译：化合物半导体沉积方法和装置
公开(公告)号：US08912079B2
公开(公告)日：2014-12-16
申请号：US13266337
申请日：2010-04-28
申请人： Motoichi Ohtsu , Takashi Yatsui , Tadashi Kawazoe , Shunsuke Yamazaki , Koichi Kajiyama , Michinobu Mizumura , Keiichi Ito
发明人： Motoichi Ohtsu , Takashi Yatsui , Tadashi Kawazoe , Shunsuke Yamazaki , Koichi Kajiyama , Michinobu Mizumura , Keiichi Ito
IPC分类号： H01L21/20 , B05C9/08 , C23C16/48 , C23C16/30 , C30B25/00 , C30B29/40 , H01L21/02 , H01L33/00 , C23C14/54 , C23C16/52
CPC分类号： C23C16/481 , C23C14/548 , C23C16/303 , C23C16/52 , C30B25/00 , C30B29/403 , H01L21/0237 , H01L21/0242 , H01L21/0254 , H01L21/0262 , H01L33/0062
摘要： Provided is a compound semiconductor deposition method of adjusting the luminous wavelength of a compound semiconductor of a ternary or higher system in a nanometer order in depositing the compound semiconductor on a substrate. In the compound semiconductor deposition method of depositing a compound semiconductor of a ternary or higher system on a substrate, propagation light of a smaller energy than a desired ideal excitation energy for the compound semiconductor is irradiated onto the substrate 13 while depositing the compound semiconductor on the substrate 13, near-field light is generated based on the irradiated propagation light from fine particles of the compound semiconductor deposited on the substrate 13, new vibrational levels for the compound semiconductor are formed in multiple stages based on the generated near-field light, and a component in the compound semiconductor corresponding to the excitation energy is excited with the propagation light through a vibrational level, among the new vibrational levels, which has an excitation energy equal to or smaller than the energy of the propagation light is excited to desorb the component.
摘要翻译：提供一种在将化合物半导体沉积在基板上时以纳米级调节三元或更高系统的化合物半导体的发光波长的化合物半导体沉积方法。在将三元或更高系统的化合物半导体沉积在衬底上的化合物半导体沉积方法中，将化合物半导体所需的理想激发能的能量较小的传播光照射到衬底13上，同时将化合物半导体沉积在基板13，基于沉积在基板13上的化合物半导体的微粒的照射的传播光产生近场光，基于产生的近场光，以多个阶段形成化合物半导体的新的振动电平，以及对应于激发能的化合物半导体中的成分被传播光激发，通过振动水平，激发能量等于或小于传播光的能量的新的振动水平被激发，从而解吸部件。

6. 发明申请

US20130009193A1 METHOD OF FABRICATING LIGHT RECEIVING ELEMENT AND APPARATUS FOR FABRICATING LIGHT RECEIVING ELEMENT 审中-公开
标题翻译：制造光接收元件的方法和装饰光接收元件的装置
公开(公告)号：US20130009193A1
公开(公告)日：2013-01-10
申请号：US13511734
申请日：2010-11-24
申请人： Motoichi Ohtsu , Tadashi Kawazoe , Takashi Yatsui , Sotaro Yukutake
发明人： Motoichi Ohtsu , Tadashi Kawazoe , Takashi Yatsui , Sotaro Yukutake
IPC分类号： H01L31/0224 , C23C14/46 , H01L31/02
CPC分类号： H01L31/18 , C23C14/3435 , H01L21/0237 , H01L21/02521 , H01L21/02631 , H01L21/02656 , H01L51/4213 , Y02E10/549 , Y02P70/521
摘要： A method of fabricating a light receiving element includes depositing a material for one of a P-type semiconductor, an N--type semiconductor, and electrodes, while applying a reverse bias voltage and irradiating light of a desired wavelength longer than an absorption wavelength of the material. The deposition has a non-adiabatic flow of, at a portion where a local shape to enable generation of near field light is formed on a surface of the deposited material with the irradiation light, absorbing the irradiation light through a non-adiabatic process with the near field light, thereby generating electrons, and canceling generation of a local electric field based on the voltage, and a particle adsorbing flow of, at a portion where the shape is not formed, causing the portion where the local electric field is generated to sequentially adsorb particles forming the material, and shifting to the non-adiabatic flow when the shape is formed.
摘要翻译：一种制造光接收元件的方法包括：在施加反向偏置电压的同时，对P型半导体，N型半导体和电极之一沉积材料，并且将所需波长的光长于材料。沉积物具有非绝热的流动，在使用照射光的沉积材料的表面上形成能够产生近场光的局部形状的部分，通过非绝热过程吸收照射光，从而产生电子，并且基于电压消除局部电场的产生，并且在未形成形状的部分处的颗粒吸附流动依次产生局部电场的部分吸附形成材料的颗粒，并且当形成形状时转移到非绝热流。

7. 发明申请

US20120058627A1 COMPOUND SEMICONDUCTOR DEPOSITION METHOD AND APPARATUS 有权
标题翻译：化合物半导体沉积方法和装置
公开(公告)号：US20120058627A1
公开(公告)日：2012-03-08
申请号：US13266337
申请日：2010-04-28
申请人： Motoichi Ohtsu , Tadashi Kawazoe , Shunsuke Yamazaki , Koichi Kajiyama , Michinobu Mizumura , Keiichi Ito
发明人： Motoichi Ohtsu , Tadashi Kawazoe , Shunsuke Yamazaki , Koichi Kajiyama , Michinobu Mizumura , Keiichi Ito
IPC分类号： H01L21/20 , B05C9/08
CPC分类号： C23C16/481 , C23C14/548 , C23C16/303 , C23C16/52 , C30B25/00 , C30B29/403 , H01L21/0237 , H01L21/0242 , H01L21/0254 , H01L21/0262 , H01L33/0062
摘要： Provided is a compound semiconductor deposition method of adjusting the luminous wavelength of a compound semiconductor of a ternary or higher system in a nanometer order in depositing the compound semiconductor on a substrate. In the compound semiconductor deposition method of depositing a compound semiconductor of a ternary or higher system on a substrate, propagation light of a smaller energy than a desired ideal excitation energy for the compound semiconductor is irradiated onto the substrate 13 while depositing the compound semiconductor on the substrate 13, near-field light is generated based on the irradiated propagation light from fine particles of the compound semiconductor deposited on the substrate 13, new vibrational levels for the compound semiconductor are formed in multiple stages based on the generated near-field light, and a component in the compound semiconductor corresponding to the excitation energy is excited with the propagation light through a vibrational level, among the new vibrational levels, which has an excitation energy equal to or smaller than the energy of the propagation light is excited to desorb the component.
摘要翻译：提供一种在将化合物半导体沉积在基板上时以纳米级调节三元或更高系统的化合物半导体的发光波长的化合物半导体沉积方法。在将三元或更高系统的化合物半导体沉积在衬底上的化合物半导体沉积方法中，将化合物半导体所需的理想激发能的能量较小的传播光照射到衬底13上，同时将化合物半导体沉积在基板13，基于沉积在基板13上的化合物半导体的微粒的照射的传播光产生近场光，基于产生的近场光，以多个阶段形成化合物半导体的新的振动电平，以及对应于激发能的化合物半导体中的成分被传播光激发，通过振动水平，激发能量等于或小于传播光的能量的新的振动水平被激发，从而解吸部件。

8. 发明申请

US20060153058A1 Optical-pickup slider, manufacturing method thereof, probe and manufacturing method thereof, and probe array and manufacturing method thereof 失效
公开(公告)号：US20060153058A1
公开(公告)日：2006-07-13
申请号：US11294474
申请日：2005-12-06
申请人： Junichi Takahashi , Motonobu Kourogi , Takashi Yatsui , Motoichi Ohtsu
发明人： Junichi Takahashi , Motonobu Kourogi , Takashi Yatsui , Motoichi Ohtsu
IPC分类号： G11B15/64 , B29D11/00
CPC分类号： G11B7/1387 , G01Q60/22 , G11B7/122 , G11B7/22 , G11B21/21 , Y10T29/49002 , Y10T29/4902 , Y10T29/49032 , Y10T29/49041 , Y10T29/49046 , Y10T29/49048
摘要： An optical-pickup slider is characterized in that a light-transmitting-property substrate is bonded to a surface of a layer having a tapered through hole, on which surface a larger opening of the tapered through hole exists. Thereby, it is possible to prevent the layer having an aperture from being destroyed. A method of manufacturing the optical-pickup slider comprises the steps of a) making a tapered through hole in a layer layered on a first substrate and having a thickness smaller than that of the first substrate; and, after bonding a light-transmitting-property substrate to a surface of the layer, removing the first substrate so as to expose an aperture at a tip of the tapered through hole.

9. 发明授权

US06617569B2 Probe opening forming apparatus and near-field optical microscope using the same 有权
标题翻译：探针开口成型装置及使用其的近场光学显微镜
公开(公告)号：US06617569B2
公开(公告)日：2003-09-09
申请号：US09860643
申请日：2001-05-21
申请人： Yoshihito Narita , Tsutomu Inoue , Susumu Teruyama , Toshiharu Saiki , Shuji Mononobe , Motoichi Ohtsu
发明人： Yoshihito Narita , Tsutomu Inoue , Susumu Teruyama , Toshiharu Saiki , Shuji Mononobe , Motoichi Ohtsu
IPC分类号： H01J516
CPC分类号： G01Q60/22
摘要： A probe opening forming apparatus 139 comprising: light detecting means 140 for detecting a quantity of a light transmitted from a tip portion of the probe through a light of the source 116, which is on contact with the tip portion of the probe; storage means 142 for previously storing information about relation of the quantity of the light transmitted from the tip portion of the probe and the size of the opening; calculating means 144 for obtaining the value of the light quantity for obtaining an opening having a desirable size based on the information stored in the storage means 142; and pressing control means 126 for controlling the press of the tip portion of the probe against the light detecting means through the pressing means 114 such that a light quantity detected by the light detecting means 140 is equal to the light quantity calculated from the calculating means 144.
摘要翻译：探针开口形成装置139，包括：光检测装置140，用于通过与探针的尖端部分接触的源116的光来检测从探针的末端部分透射的光量; 存储装置142，用于预先存储关于从探头的尖端部分传播的光量与开口尺寸的关系的信息; 计算装置144，用于基于存储在存储装置142中的信息获得用于获得具有期望尺寸的开口的光量的值; 以及按压控制装置126，用于通过按压装置114控制探针的顶端部分对光检测装置的按压，使得由光检测装置140检测的光量等于从计算装置144计算的光量。

10. 发明授权

US06493091B2 Interference detecting apparatus and tomography apparatus 有权
标题翻译：干涉检测装置及断层摄影装置
公开(公告)号：US06493091B2
公开(公告)日：2002-12-10
申请号：US09784000
申请日：2001-02-16
申请人： Motonobu Kourogi , Motoichi Ohtsu
发明人： Motonobu Kourogi , Motoichi Ohtsu
IPC分类号： G01B902
CPC分类号： G01B9/02008 , G01B9/02002 , G01N21/4795
摘要： Measurement of an internal structure of a sample is performed using interference of light within a short time. Through a first optical frequency comb generator 5 using a first signal having a frequency f1 and generating reference light having a sideband every interval of the frequency f1 and a second optical frequency comb generator 6 using a second signal having a frequency f2 and generating object light having a sideband every interval of the frequency f2, and sweeping of emission timing between the reference light and the object light, by changing a phase difference or frequency difference between the first signal and second signal, and detecting a change in light intensity of the interference light due to the interference, operation of detecting the interference position is made at a high speed.
摘要翻译：样品的内部结构的测量使用光在短时间内的干扰来进行。通过第一光频梳发生器5，使用具有频率f1的第一信号，并且产生具有频率f1的每个间隔的边带的参考光;以及使用具有频率f2的第二信号产生第二光频梳发生器6，并产生具有频带f2的每个间隔的边带，以及通过改变第一信号和第二信号之间的相位差或频率差来扫描参考光和对象光之间的发射定时，以及检测干涉光的光强度的变化由于干扰，高速地进行检测干扰位置的动作。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式