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1. 发明授权

US09240371B2 Semiconductor module, semiconductor device having semiconductor module, and method of manufacturing semiconductor module 有权
标题翻译：半导体模块，具有半导体模块的半导体器件，以及半导体模块的制造方法
公开(公告)号：US09240371B2
公开(公告)日：2016-01-19
申请号：US14235571
申请日：2012-08-09
申请人： Hiroshi Ishino , Tomokazu Watanabe
发明人： Hiroshi Ishino , Tomokazu Watanabe
IPC分类号： H01L23/495 , H01L23/40 , H01L23/433 , H01L23/473 , H01L21/50 , H01L25/07
CPC分类号： H01L23/49562 , H01L21/4825 , H01L21/4871 , H01L21/50 , H01L21/565 , H01L23/3114 , H01L23/4006 , H01L23/4334 , H01L23/473 , H01L23/4952 , H01L23/49537 , H01L23/49568 , H01L23/49575 , H01L25/072 , H01L2224/06181 , H01L2224/32245 , H01L2224/3754 , H01L2224/40137 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/00014 , H01L2924/13055 , H01L2924/13091 , H01L2924/181 , H01L2924/30107 , H01L2924/00 , H01L2924/00012 , H01L2224/37099
摘要： A semiconductor module is configured such that heat radiation substrates are connected to lead frames and semiconductor chips are directly connected to the lead frames, so that the semiconductor chips are not connected to the lead frames through conductive portions of the heat radiation substrates. Therefore, the conductive portion can have a solid shape without being divided. As such, an occurrence of curving of the heat radiation substrates is suppressed when a temperature is reduced from a high temperature to a room temperature after resin-sealing at the high temperature or the like. Therefore, connection between the semiconductor chip and the lead frames and connection between the lead frames and the heat radiation substrates enhance.
摘要翻译：半导体模块被配置为使得散热基板连接到引线框架，并且半导体芯片直接连接到引线框架，使得半导体芯片不通过散热基板的导电部分连接到引线框架。因此，导电部分可以具有不分割的实心形状。因此，当在高温等树脂密封后温度从高温降低至室温时，抑制了放热基板弯曲的发生。因此，半导体芯片和引线框架之间的连接以及引线框架和散热基板之间的连接增强。

2. 发明申请

US20140159216A1 SEMICONDUCTOR MODULE, SEMICONDUCTOR DEVICE HAVING SEMICONDUCTOR MODULE, AND METHOD OF MANUFACTURING SEMICONDUCTOR MODULE 有权
标题翻译：具有半导体模块的半导体模块，半导体器件和制造半导体模块的方法
公开(公告)号：US20140159216A1
公开(公告)日：2014-06-12
申请号：US14235571
申请日：2012-08-09
申请人： Hiroshi Ishino , Tomokazu Watanabe
发明人： Hiroshi Ishino , Tomokazu Watanabe
IPC分类号： H01L23/495 , H01L21/50
CPC分类号： H01L23/49562 , H01L21/4825 , H01L21/4871 , H01L21/50 , H01L21/565 , H01L23/3114 , H01L23/4006 , H01L23/4334 , H01L23/473 , H01L23/4952 , H01L23/49537 , H01L23/49568 , H01L23/49575 , H01L25/072 , H01L2224/06181 , H01L2224/32245 , H01L2224/3754 , H01L2224/40137 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/00014 , H01L2924/13055 , H01L2924/13091 , H01L2924/181 , H01L2924/30107 , H01L2924/00 , H01L2924/00012 , H01L2224/37099
摘要： A semiconductor module is configured such that heat radiation substrates are connected to lead frames and semiconductor chips are directly connected to the lead frames so that the semiconductor chips are not connected to the lead frames through conductive portions of the heat radiation substrates. Therefore, the conductive portion can have a solid shape without being divided. As such, an occurrence of curving of the heat radiation substrates is suppressed when a temperature is reduced from a high temperature to a room temperature after resin-sealing at the high temperature or the like. Therefore, connection between the semiconductor chip and the lead frames and connection between the lead frames and the heat radiation substrates enhance.
摘要翻译：半导体模块被配置为使得散热基板连接到引线框架，并且半导体芯片直接连接到引线框架，使得半导体芯片不通过散热基板的导电部分连接到引线框架。因此，导电部分可以具有不分割的实心形状。因此，当在高温等树脂密封后温度从高温降低至室温时，抑制了放热基板弯曲的发生。因此，半导体芯片和引线框架之间的连接以及引线框架和散热基板之间的连接增强。

3. 发明授权

US08309434B2 Method for manufacturing semiconductor device including semiconductor elements with electrode formed thereon 有权
标题翻译：一种半导体器件的制造方法，包括形成有电极的半导体元件
公开(公告)号：US08309434B2
公开(公告)日：2012-11-13
申请号：US12923313
申请日：2010-09-14
申请人： Yasutomi Asai , Hiroshi Ishino
发明人： Yasutomi Asai , Hiroshi Ishino
IPC分类号： H01L21/46 , H01L21/78 , H01L21/301
CPC分类号： H01L24/40 , H01L21/6835 , H01L24/32 , H01L24/33 , H01L24/41 , H01L24/48 , H01L24/83 , H01L2224/03003 , H01L2224/03013 , H01L2224/05124 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/0603 , H01L2224/29111 , H01L2224/2919 , H01L2224/32225 , H01L2224/40091 , H01L2224/40225 , H01L2224/48227 , H01L2224/48247 , H01L2224/48472 , H01L2224/48491 , H01L2224/73265 , H01L2224/83801 , H01L2224/8385 , H01L2224/84801 , H01L2224/8485 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/0105 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/014 , H01L2924/0665 , H01L2924/10253 , H01L2924/1305 , H01L2924/13055 , H01L2924/15787 , H01L2924/181 , H01L2924/3511 , H01L2924/00 , H01L2924/01026 , H01L2924/01028 , H01L2924/3512 , H01L2224/45099 , H01L2924/00012 , H01L2224/37099
摘要： A semiconductor device includes: a semiconductor element having first and second surfaces, wherein the semiconductor element includes at least one electrode, which is disposed on one of the first and second surfaces; and first and second metallic layers, wherein the first metallic layer is disposed on the first surface of the semiconductor element, and wherein the second metallic layer is disposed on the second surface of the semiconductor element. The one electrode is electrically coupled with one of the first and second metallic layers, which is disposed on the one of the first and second surfaces. The one electrode is coupled with an external circuit through the one of the first and second metallic layers.
摘要翻译：半导体器件包括：具有第一和第二表面的半导体元件，其中所述半导体元件包括设置在所述第一表面和所述第二表面中的一个上的至少一个电极; 以及第一和第二金属层，其中第一金属层设置在半导体元件的第一表面上，并且其中第二金属层设置在半导体元件的第二表面上。一个电极与第一和第二金属层中的一个电耦合，第一和第二金属层设置在第一和第二表面之一上。一个电极通过第一和第二金属层之一与外部电路耦合。

4. 发明申请

US20110033975A1 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20110033975A1
公开(公告)日：2011-02-10
申请号：US12923313
申请日：2010-09-14
申请人： Yasutomi Asai , Hiroshi Ishino
发明人： Yasutomi Asai , Hiroshi Ishino
IPC分类号： H01L21/50
CPC分类号： H01L24/40 , H01L21/6835 , H01L24/32 , H01L24/33 , H01L24/41 , H01L24/48 , H01L24/83 , H01L2224/03003 , H01L2224/03013 , H01L2224/05124 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/0603 , H01L2224/29111 , H01L2224/2919 , H01L2224/32225 , H01L2224/40091 , H01L2224/40225 , H01L2224/48227 , H01L2224/48247 , H01L2224/48472 , H01L2224/48491 , H01L2224/73265 , H01L2224/83801 , H01L2224/8385 , H01L2224/84801 , H01L2224/8485 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/0105 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/014 , H01L2924/0665 , H01L2924/10253 , H01L2924/1305 , H01L2924/13055 , H01L2924/15787 , H01L2924/181 , H01L2924/3511 , H01L2924/00 , H01L2924/01026 , H01L2924/01028 , H01L2924/3512 , H01L2224/45099 , H01L2924/00012 , H01L2224/37099
摘要： A semiconductor device includes: a semiconductor element having first and second surfaces, wherein the semiconductor element includes at least one electrode, which is disposed on one of the first and second surfaces; and first and second metallic layers, wherein the first metallic layer is disposed on the first surface of the semiconductor element, and wherein the second metallic layer is disposed on the second surface of the semiconductor element. The one electrode is electrically coupled with one of the first and second metallic layers, which is disposed on the one of the first and second surfaces. The one electrode is coupled with an external circuit through the one of the first and second metallic layers.
摘要翻译：半导体器件包括：具有第一和第二表面的半导体元件，其中所述半导体元件包括设置在所述第一表面和所述第二表面中的一个上的至少一个电极; 以及第一和第二金属层，其中第一金属层设置在半导体元件的第一表面上，并且其中第二金属层设置在半导体元件的第二表面上。一个电极与第一和第二金属层中的一个电耦合，第一和第二金属层设置在第一和第二表面之一上。一个电极通过第一和第二金属层之一与外部电路耦合。

5. 发明申请

US20070278550A1 Semiconductor device and method for manufacturing the same 审中-公开
标题翻译：半导体装置及其制造方法
公开(公告)号：US20070278550A1
公开(公告)日：2007-12-06
申请号：US11806340
申请日：2007-05-31
申请人： Yasutomi Asai , Hiroshi Ishino
发明人： Yasutomi Asai , Hiroshi Ishino
IPC分类号： H01L29/94
CPC分类号： H01L24/40 , H01L21/6835 , H01L24/32 , H01L24/33 , H01L24/41 , H01L24/48 , H01L24/83 , H01L2224/03003 , H01L2224/03013 , H01L2224/05124 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/0603 , H01L2224/29111 , H01L2224/2919 , H01L2224/32225 , H01L2224/40091 , H01L2224/40225 , H01L2224/48227 , H01L2224/48247 , H01L2224/48472 , H01L2224/48491 , H01L2224/73265 , H01L2224/83801 , H01L2224/8385 , H01L2224/84801 , H01L2224/8485 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/0105 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/014 , H01L2924/0665 , H01L2924/10253 , H01L2924/1305 , H01L2924/13055 , H01L2924/15787 , H01L2924/181 , H01L2924/3511 , H01L2924/00 , H01L2924/01026 , H01L2924/01028 , H01L2924/3512 , H01L2224/45099 , H01L2924/00012 , H01L2224/37099
摘要： A semiconductor device includes: a semiconductor element having first and second surfaces, wherein the semiconductor element includes at least one electrode, which is disposed on one of the first and second surfaces; and first and second metallic layers, wherein the first metallic layer is disposed on the first surface of the semiconductor element, and wherein the second metallic layer is disposed on the second surface of the semiconductor element. The one electrode is electrically coupled with one of the first and second metallic layers, which is disposed on the one of the first and second surfaces. The one electrode is coupled with an external circuit through the one of the first and second metallic layers.
摘要翻译：半导体器件包括：具有第一和第二表面的半导体元件，其中所述半导体元件包括设置在所述第一表面和所述第二表面中的一个上的至少一个电极; 以及第一和第二金属层，其中第一金属层设置在半导体元件的第一表面上，并且其中第二金属层设置在半导体元件的第二表面上。一个电极与第一和第二金属层中的一个电耦合，第一和第二金属层设置在第一和第二表面之一上。一个电极通过第一和第二金属层之一与外部电路耦合。

6. 发明授权

US4107547A Logic circuit for a semiconductor integrated circuit 失效
标题翻译：半导体集成电路的逻辑电路
公开(公告)号：US4107547A
公开(公告)日：1978-08-15
申请号：US694921
申请日：1976-06-11
申请人： Hiroshi Ishino
发明人： Hiroshi Ishino
IPC分类号： H01L27/02 , H03K19/013 , H03K19/09 , H03K19/12 , H03K19/08
CPC分类号： H03K19/09 , H01L27/0207 , H03K19/013
摘要： The present invention relates to a logic circuit consisting of an improved basic logic circuit which permits a wired logic operation and is suitable for constructing a large-scale integrated circuit (LSI). In most of the conventional basic logic circuits, because the output current is bi-directional, it is impossible to carry out the wire logic operation. In the improved basic logic circuit, since the output current is uni-directional, the only requirement is that the outputs of the plural basic logic circuits be connected with each other for carrying out the output wired-OR logic and the output wired-AND logic operations, so that the logic circuit is composed of a number of basic logic circuits, which number is smaller than the number of the conventional logic circuits. Accordingly, the following advantages can be obtained by utilizing the present invention: an improvement in the IC level of the semi-conductor IC device, a reduction in the cost of manufacturing the device and an increase in the operating speed of the device.
摘要翻译：本发明涉及一种由改进的基本逻辑电路组成的逻辑电路，该电路允许有线逻辑运算并且适用于构建大规模集成电路（LSI）。在大多数传统的基本逻辑电路中，由于输出电流是双向的，所以不可能执行线逻辑运算。在改进的基本逻辑电路中，由于输出电流是单向的，唯一的要求是多个基本逻辑电路的输出彼此连接，用于执行输出有线逻辑和输出有线和逻辑操作，使得逻辑电路由多个基本逻辑电路组成，其数量小于常规逻辑电路的数量。因此，通过利用本发明可以获得以下优点：半导体IC器件的IC电平的改善，器件制造成本的降低和器件的工作速度的提高。

7. 发明授权

US08598458B2 Electronic device and method of manufacturing the same 有权
标题翻译：电子设备及其制造方法
公开(公告)号：US08598458B2
公开(公告)日：2013-12-03
申请号：US13020198
申请日：2011-02-03
申请人： Hiroshi Ishino , Takao Izumi , Kazuhiro Tsuruta , Nobuyuki Kato
发明人： Hiroshi Ishino , Takao Izumi , Kazuhiro Tsuruta , Nobuyuki Kato
IPC分类号： H02G3/02 , H05K1/16 , H05K7/02 , H05K3/34 , H01L23/06
CPC分类号： H05K3/284 , H01L21/56 , H01L23/3135 , H01L24/32 , H01L24/83 , H01L2224/26175 , H01L2224/3201 , H01L2224/32014 , H01L2224/8384 , H01L2224/8392 , H01L2224/83951 , H01L2924/14 , H01L2924/15787 , H01L2924/181 , H05K2203/1316 , H05K2203/1322 , Y10T29/49117 , Y10T29/49144 , H01L2924/00 , H01L2924/00012
摘要： An electronic device includes an electronic component, a joining member to be mechanically joined with the electronic component, and a metal conductor located between the electronic component and the joining member to mechanically join the electronic component and the joining member. The metal conductor is made of porous noble metal to have pores, and includes an end surface without being covered by the electronic component and the joining member. Furthermore, a reinforcing resin is impregnated from the end surface of the metal conductor to the pores inside of the metal conductor, so as to mechanically reinforce the metal conductor.
摘要翻译：电子设备包括电子部件，与电子部件机械连接的接合部件和位于电子部件与接合部件之间的金属导体，以机械地接合电子部件和接合部件。金属导体由多孔贵金属制成，具有孔，并且包括端面而不被电子部件和接合部件覆盖。此外，从金属导体的端面向金属导体内部的孔浸渍增强树脂，以便机械地加强金属导体。

8. 发明申请

US20110192630A1 ELECTRONIC DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：电子设备及其制造方法
公开(公告)号：US20110192630A1
公开(公告)日：2011-08-11
申请号：US13020198
申请日：2011-02-03
申请人： Hiroshi Ishino , Takao Izumi , Kazuhiro Tsuruta , Nobuyuki Kato
发明人： Hiroshi Ishino , Takao Izumi , Kazuhiro Tsuruta , Nobuyuki Kato
IPC分类号： H02G15/02 , H05K1/09 , H05K13/00
CPC分类号： H05K3/284 , H01L21/56 , H01L23/3135 , H01L24/32 , H01L24/83 , H01L2224/26175 , H01L2224/3201 , H01L2224/32014 , H01L2224/8384 , H01L2224/8392 , H01L2224/83951 , H01L2924/14 , H01L2924/15787 , H01L2924/181 , H05K2203/1316 , H05K2203/1322 , Y10T29/49117 , Y10T29/49144 , H01L2924/00 , H01L2924/00012
摘要： An electronic device includes an electronic component, a joining member to be mechanically joined with the electronic component, and a metal conductor located between the electronic component and the joining member to mechanically join the electronic component and the joining member. The metal conductor is made of porous noble metal to have pores, and includes an end surface without being covered by the electronic component and the joining member. Furthermore, a reinforcing resin is impregnated from the end surface of the metal conductor to the pores inside of the metal conductor, so as to mechanically reinforce the metal conductor.
摘要翻译：电子设备包括电子部件，与电子部件机械连接的接合部件和位于电子部件与接合部件之间的金属导体，以机械地接合电子部件和接合部件。金属导体由多孔贵金属制成，具有孔，并且包括端面而不被电子部件和接合部件覆盖。此外，从金属导体的端面向金属导体内部的孔浸渍增强树脂，以便机械地加强金属导体。

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