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1. 发明申请

US20080006853A1 Schottky Electrode of Nitride Semiconductor Device and Process for Production Thereof 审中-公开
标题翻译：氮化硅半导体器件的肖特基电极及其制造方法
公开(公告)号：US20080006853A1
公开(公告)日：2008-01-10
申请号：US11571816
申请日：2005-07-08
申请人： Hironobu Miyamoto , Tatsuo Nakayama , Yuji Ando , Yasuhiro Okamoto , Masaaki Kuzuhara , Takashi Inoue , Koji Hataya
发明人： Hironobu Miyamoto , Tatsuo Nakayama , Yuji Ando , Yasuhiro Okamoto , Masaaki Kuzuhara , Takashi Inoue , Koji Hataya
IPC分类号： H01L29/47 , H01L21/283 , H01L29/812
CPC分类号： H01L29/475 , H01L29/2003 , H01L29/812
摘要： The present invention provides a Schottky electrode for a nitride semiconductor device having a high barrier height, a low leak current performance and a low resistance and being thermally stable, and a process for production thereof. The Schottky electrode for a nitride semiconductor has a layered structure that comprises a copper (Cu) layer being in contact with the nitride semiconductor and a first electrode material layer formed on the copper (Cu) layer as an upper layer. As the first electrode material, a metal material which has a thermal expansion coefficient smaller than the thermal expansion coefficient of copper (Cu) and starts to undergo a solid phase reaction with copper (Cu) at a temperature of 400° C. or higher is employed.
摘要翻译：本发明提供了一种用于氮化物半导体器件的肖特基电极，其具有高势垒高度，低漏电流性能和低电阻并且是热稳定的，以及其制造方法。用于氮化物半导体的肖特基电极具有包括与氮化物半导体接触的铜（Cu）层和形成在作为上层的铜（Cu）层上的第一电极材料层的层状结构。作为第一电极材料，在400℃以上的温度下开始与铜（Cu）的热膨胀系数小于铜（Cu）的热膨胀系数并开始与铜（Cu）的固相反应的金属材料为雇用。

2. 发明授权

US07859014B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07859014B2
公开(公告)日：2010-12-28
申请号：US11571290
申请日：2005-06-24
申请人： Tatsuo Nakayama , Hironobu Miyamoto , Yuji Ando , Masaaki Kuzuhara , Yasuhiro Okamoto , Takashi Inoue , Koji Hataya
发明人： Tatsuo Nakayama , Hironobu Miyamoto , Yuji Ando , Masaaki Kuzuhara , Yasuhiro Okamoto , Takashi Inoue , Koji Hataya
IPC分类号： H01L29/66
CPC分类号： H01L29/7787 , H01L29/2003 , H01L29/4236 , H01L29/42376 , H01L29/78
摘要： The present invention provides a semiconductor device capable of suppressing current collapse, and also of preventing dielectric breakdown voltage and gain from lowering so as to perform high-voltage operation and realize an ideal high output. On a substrate (101), there are formed a buffer layer (102) made of a first GaN-based semiconductor, a carrier traveling layer (103) made of a second GaN-based semiconductor and a carrier supplying layer (104) made of a third GaN-based semiconductor. A recess structure (108) is made by eliminating a part of a first insulation film (107) and a part of the carrier supplying layer (104). Next, a gate insulation film (109) is deposited, and then a gate electrode (110) is formed so as to fill up the recess portion (108) and cover on over an area where the first insulation film (107) remains so that its portion on the drain electrode side is longer than that on the source electrode side. Such a recess structure is employed so as to provide the high-output semiconductor device capable of performing the high-voltage operation.
摘要翻译：本发明提供一种能够抑制电流塌陷以及防止电介质击穿电压和增益降低的半导体器件，从而进行高压操作并实现理想的高输出。在基板（101）上形成有由第一GaN基半导体构成的缓冲层（102），由第二GaN基半导体构成的载流子移动层（103）和由第三GaN基半导体。通过消除第一绝缘膜（107）的一部分和载体供给层（104）的一部分来制造凹陷结构（108）。接下来，沉积栅极绝缘膜（109），然后形成栅极电极（110），以填充凹部（108）并覆盖在第一绝缘膜（107）保留的区域上，使得其漏电极侧的部分比源电极侧的部分长。采用这样的凹部结构来提供能够执行高电压操作的高输出半导体器件。

3. 发明授权

US07459788B2 Ohmic electrode structure of nitride semiconductor device 失效
标题翻译：氮化物半导体器件的欧姆电极结构
公开(公告)号：US07459788B2
公开(公告)日：2008-12-02
申请号：US10590730
申请日：2005-02-28
申请人： Tatsuo Nakayama , Yuji Ando , Hironobu Miyamoto , Masaaki Kuzuhara , Yasuhiro Okamoto , Takashi Inoue , Koji Hataya
发明人： Tatsuo Nakayama , Yuji Ando , Hironobu Miyamoto , Masaaki Kuzuhara , Yasuhiro Okamoto , Takashi Inoue , Koji Hataya
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L33/40 , H01L33/32
摘要： An ohmic electrode structure of a nitride semiconductor device having a nitride semiconductor. The ohmic electrode structure is provided with a first metal film formed on the nitride semiconductor and a second metal film formed on the first metal film. The first metal film is composed of at least one material selected from a group consisting of V, Mo, Ti, Nb, W, Fe, Hf, Re, Ta and Zr. The second metal film is composed of at least one material different from that of the first metal film (102), selected from a group consisting of V, Mo, Ti, Nb, W, Fe, Hf, Re, Ta, Zr, Pt and Au.
摘要翻译：具有氮化物半导体的氮化物半导体器件的欧姆电极结构。欧姆电极结构设置有形成在氮化物半导体上的第一金属膜和形成在第一金属膜上的第二金属膜。第一金属膜由选自V，Mo，Ti，Nb，W，Fe，Hf，Re，Ta和Zr中的至少一种材料构成。第二金属膜由与V，Mo，Ti，Nb，W，Fe，Hf，Re，Ta，Zr，Pt等组成的组中的至少一种不同于第一金属膜的材料构成和Au。

4. 发明申请

US20070158692A1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US20070158692A1
公开(公告)日：2007-07-12
申请号：US11571290
申请日：2005-06-24
申请人： Tatsuo Nakayama , Hironobu Miyamoto , Yuji Ando , Masaaki Kuzuhara , Yasuhiro Okamoto , Takashi Inoue , Koji Hataya
发明人： Tatsuo Nakayama , Hironobu Miyamoto , Yuji Ando , Masaaki Kuzuhara , Yasuhiro Okamoto , Takashi Inoue , Koji Hataya
IPC分类号： H01L29/76
CPC分类号： H01L29/7787 , H01L29/2003 , H01L29/4236 , H01L29/42376 , H01L29/78
摘要： The present invention provides a semiconductor device capable of suppressing current collapse, and also of preventing dielectric breakdown voltage and gain from lowering so as to perform high-voltage operation and realize an ideal high output. On a substrate (101), there are formed a buffer layer (102) made of a first GaN-based semiconductor, a carrier traveling layer (103) made of a second GaN-based semiconductor and a carrier supplying layer (104) made of a third GaN-based semiconductor. A recess structure (108) is made by eliminating a part of a first insulation film (107) and a part of the carrier supplying layer (104). Next, a gate insulation film (109) is deposited, and then a gate electrode (110) is formed so as to fill up the recess portion (108) and cover on over an area where the first insulation film (107) remains so that its portion on the drain electrode side is longer than that on the source electrode side. Such a recess structure is employed so as to provide the high-output semiconductor device capable of performing the high-voltage operation.
摘要翻译：本发明提供一种能够抑制电流塌陷以及防止电介质击穿电压和增益降低的半导体器件，从而进行高压操作并实现理想的高输出。在基板（101）上形成有由第一GaN基半导体构成的缓冲层（102），由第二GaN基半导体构成的载流子移动层（103）和由第三GaN基半导体。通过消除第一绝缘膜（107）的一部分和载体供给层（104）的一部分来制造凹陷结构（108）。接下来，沉积栅极绝缘膜（109），然后形成栅电极（110），以填充凹部（108）并覆盖在第一绝缘膜（107）保留的区域上，使得其漏电极侧的部分比源电极侧的部分长。采用这样的凹部结构来提供能够执行高电压操作的高输出半导体器件。

5. 发明申请

US20070164305A1 Ohmic electrode structure of nitride semiconductor device 失效
标题翻译：氮化物半导体器件的欧姆电极结构
公开(公告)号：US20070164305A1
公开(公告)日：2007-07-19
申请号：US10590730
申请日：2005-02-28
申请人： Tatsuo Nakayama , Yuji Ando , Hironobu Miyamoto , Masaaki Kuzuhara , Yasuhiro Okamoto , Takashi Inoue , Koji Hataya
发明人： Tatsuo Nakayama , Yuji Ando , Hironobu Miyamoto , Masaaki Kuzuhara , Yasuhiro Okamoto , Takashi Inoue , Koji Hataya
IPC分类号： H01L33/00
CPC分类号： H01L33/40 , H01L33/32
摘要： An ohmic electrode structure of a nitride semiconductor device having a nitride semiconductor. The ohmic electrode structure is provided with a first metal film formed on the nitride semiconductor and a second metal film formed on the first metal film. The first metal film is composed of at least one material selected from a group consisting of V, Mo, Ti, Nb, W, Fe, Hf, Re, Ta and Zr. The second metal film is composed of at least one material different from that of the first metal film (102), selected from a group consisting of V, Mo, Ti, Nb, W, Fe, Hf, Re, Ta, Zr, Pt and Au.
摘要翻译：具有氮化物半导体的氮化物半导体器件的欧姆电极结构。欧姆电极结构设置有形成在氮化物半导体上的第一金属膜和形成在第一金属膜上的第二金属膜。第一金属膜由选自V，Mo，Ti，Nb，W，Fe，Hf，Re，Ta和Zr中的至少一种材料构成。第二金属膜由与V，Mo，Ti，Nb，W，Fe，Hf，Re，Ta，Zr，Pt中的至少一种不同于第一金属膜（102）的材料构成。和Au。

6. 发明授权

US07973335B2 Field-effect transistor having group III nitride electrode structure 失效
标题翻译：具有III族氮化物电极结构的场效应晶体管
公开(公告)号：US07973335B2
公开(公告)日：2011-07-05
申请号：US10538739
申请日：2003-12-15
申请人： Yasuhiro Okamoto , Hironobu Miyamoto , Yuji Ando , Tatsuo Nakayama , Takashi Inoue , Masaaki Kuzuhara
发明人： Yasuhiro Okamoto , Hironobu Miyamoto , Yuji Ando , Tatsuo Nakayama , Takashi Inoue , Masaaki Kuzuhara
IPC分类号： H01L31/072
CPC分类号： H01L29/402 , H01L29/2003 , H01L29/42316 , H01L29/7787
摘要： A field plate portion (5) overhanging a drain side in a visored shape is formed in a gate electrode (2). A multilayered film including a SiN film (21) and a SiO2 film (22) is formed beneath the field plate portion (5). The SiN film (21) is formed so that a surface of an AlGaN electron supply layer (13) is covered therewith.
摘要翻译：在栅电极（2）中形成有以遮挡形状突出于漏极侧的场板部（5）。在场板部（5）的下方形成有SiN膜（21）和SiO 2膜（22）的多层膜。形成SiN膜（21），使得AlGaN电子供给层（13）的表面被覆盖。

7. 发明申请

US20060043415A1 Field-effect transistor 失效
标题翻译：场效应晶体管
公开(公告)号：US20060043415A1
公开(公告)日：2006-03-02
申请号：US10541583
申请日：2003-12-15
申请人： Yasuhiro Okamoto , Hironobu Miyamoto , Yuji Ando , Tatsuo Nakayama , Takashi Inoue , Masaaki Kuzuhara
发明人： Yasuhiro Okamoto , Hironobu Miyamoto , Yuji Ando , Tatsuo Nakayama , Takashi Inoue , Masaaki Kuzuhara
IPC分类号： H01L31/0328 , H01L21/336
CPC分类号： H01L29/402 , H01L29/2003 , H01L29/7787
摘要： An electric-field control electrode (5) is formed between a gate electrode (2) and a drain electrode (3). A multilayered film including a SiN film (21) and a SiO2 film (22) is formed below the electric-field control electrode (5). The SiN film (21) is formed so that a surface of an AlGaN electron supply layer (13) is covered with the SiN film (21).
摘要翻译：在栅电极（2）和漏电极（3）之间形成电场控制电极（5）。在电场控制电极（5）的下方形成包括SiN膜（21）和SiO 2膜（22）的多层膜。形成SiN膜（21），使得AlGaN电子供给层（13）的表面被SiN膜（21）覆盖。

8. 发明授权

US07256432B2 Field-effect transistor 失效
标题翻译：场效应晶体管
公开(公告)号：US07256432B2
公开(公告)日：2007-08-14
申请号：US10541583
申请日：2003-12-15
申请人： Yasuhiro Okamoto , Hironobu Miyamoto , Yuji Ando , Tatsuo Nakayama , Takashi Inoue , Masaaki Kuzuhara
发明人： Yasuhiro Okamoto , Hironobu Miyamoto , Yuji Ando , Tatsuo Nakayama , Takashi Inoue , Masaaki Kuzuhara
IPC分类号： H01L29/205 , H01L29/78
CPC分类号： H01L29/402 , H01L29/2003 , H01L29/7787
摘要： An electric-field control electrode (5) is formed between a gate electrode (2) and a drain electrode (3). A multilayered film including a SiN film (21) and a SiO2 film (22) is formed below the electric-field control electrode (5). The SiN film (21) is formed so that a surface of an AlGaN electron supply layer (13) is covered with the SiN film (21).
摘要翻译：在栅电极（2）和漏电极（3）之间形成电场控制电极（5）。在电场控制电极（5）的下方形成包括SiN膜（21）和SiO 2膜（22）的多层膜。形成SiN膜（21），使得AlGaN电子供给层（13）的表面被SiN膜（21）覆盖。

9. 发明申请

US20080179743A1 Electrode, method for producing same and semiconductor device using same 有权
标题翻译：电极及其制造方法以及使用该电极的半导体装置
公开(公告)号：US20080179743A1
公开(公告)日：2008-07-31
申请号：US12007218
申请日：2008-01-08
申请人： Tatsuo Nakayama , Hironobu Miyamoto , Yuji Ando , Takashi Inoue , Yasuhiro Okamoto , Masaaki Kuzuhara
发明人： Tatsuo Nakayama , Hironobu Miyamoto , Yuji Ando , Takashi Inoue , Yasuhiro Okamoto , Masaaki Kuzuhara
IPC分类号： H01L29/45 , H01L21/283
CPC分类号： H01L29/452 , H01L21/28 , H01L29/2003 , H01L2924/0002 , H01L2924/00
摘要： There is provided a technology for obtaining an electrode having a low contact resistance and less surface roughness. There is provided an electrode comprising a semiconductor film 101, and a first metal layer 102 and a second metal layer 103 sequentially stacked in this order on the semiconductor film 101, characterized in that the first metal film 102 is formed of Al, and the second metal film 103 is formed of at least one metal selected from the group consisting of Nb, W, Fe, Hf, Re, Ta and Zr.
摘要翻译：提供了一种获得具有低接触电阻和较小表面粗糙度的电极的技术。提供了一种电极，其包括半导体膜101，以及顺序地依次层叠在半导体膜101上的第一金属层102和第二金属层103，其特征在于，第一金属膜102由Al形成，第二金属层103 金属膜103由选自Nb，W，Fe，Hf，Re，Ta和Zr中的至少一种金属形成。

10. 发明授权

US07615868B2 Electrode, method for producing same and semiconductor device using same 有权
标题翻译：电极及其制造方法以及使用该电极的半导体装置
公开(公告)号：US07615868B2
公开(公告)日：2009-11-10
申请号：US12007218
申请日：2008-01-08
申请人： Tatsuo Nakayama , Hironobu Miyamoto , Yuji Ando , Takashi Inoue , Yasuhiro Okamoto , Masaaki Kuzuhara
发明人： Tatsuo Nakayama , Hironobu Miyamoto , Yuji Ando , Takashi Inoue , Yasuhiro Okamoto , Masaaki Kuzuhara
IPC分类号： H01L23/48 , H01L21/28
CPC分类号： H01L29/452 , H01L21/28 , H01L29/2003 , H01L2924/0002 , H01L2924/00
摘要： There is provided a technology for obtaining an electrode having a low contact resistance and less surface roughness. There is provided an electrode comprising a semiconductor film 101, and a first metal layer 102 and a second metal layer 103 sequentially stacked in this order on the semiconductor film 101, characterized in that the first metal film 102 is formed of Al, and the second metal film 103 is formed of at least one metal selected from the group consisting of Nb, W, Fe, Hf, Re, Ta and Zr.
摘要翻译：提供了一种获得具有低接触电阻和较小表面粗糙度的电极的技术。提供了一种电极，其包括半导体膜101，以及顺序地依次层叠在半导体膜101上的第一金属层102和第二金属层103，其特征在于，第一金属膜102由Al形成，第二金属层103 金属膜103由选自Nb，W，Fe，Hf，Re，Ta和Zr中的至少一种金属形成。

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