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1. 发明授权

US4619695A Process for producing high-purity metal targets for LSI electrodes 失效
标题翻译：用于生产LSI电极的高纯金属靶的工艺
公开(公告)号：US4619695A
公开(公告)日：1986-10-28
申请号：US634895
申请日：1984-07-26
申请人： Hideo Oikawa , Takao Amazawa , Nakahachiro Honma , Hideo Miyazaki , Iwao Kyono , Nobuyuki Mori , Yoshiharu Katoh , Masami Kuroki
发明人： Hideo Oikawa , Takao Amazawa , Nakahachiro Honma , Hideo Miyazaki , Iwao Kyono , Nobuyuki Mori , Yoshiharu Katoh , Masami Kuroki
IPC分类号： H01L29/78 , C22B34/34 , H01L21/28 , H01L21/285 , H01L29/49 , C22B4/00
CPC分类号： C22B34/34 , H01L21/28079 , H01L21/28097 , H01L21/285 , H01L29/495 , H01L29/4975 , Y10T428/12528 , Y10T428/12674 , Y10T428/12833
摘要： A high-purity high-melting metal target or high-purity high-melting metal silicide target for LSI electrodes having an alkali metal content of not more than 100 ppb and a radioactive element content of not more than 10 ppb is provided by a wet purification process followed by a series of dry processings. Preferably the high-melting metal is molybdenum, tungsten, titanium, niobium or tantalum. More preferably, the high-melting metal is molybdenum.
摘要翻译：通过湿式纯化提供碱金属含量不大于100ppb，放射性元素含量不大于10ppb的LSI电极的高纯度高熔点金属靶或高纯度高熔点金属硅化物靶过程之后是一系列干法处理。优选地，高熔点金属是钼，钨，钛，铌或钽。更优选地，高熔点金属是钼。

2. 发明授权

US4770948A High-purity metal and metal silicide target for LSI electrodes 失效
标题翻译：用于LSI电极的高纯度金属和金属硅化物靶
公开(公告)号：US4770948A
公开(公告)日：1988-09-13
申请号：US877559
申请日：1986-06-23
申请人： Hideo Oikawa , Takao Amazawa , Nakahachiro Honna , Hideo Miyazaki , Iwao Kyono , Nobuyuki Mori , Yoshiharu Katoh , Masami Kuroki
发明人： Hideo Oikawa , Takao Amazawa , Nakahachiro Honna , Hideo Miyazaki , Iwao Kyono , Nobuyuki Mori , Yoshiharu Katoh , Masami Kuroki
IPC分类号： H01L29/78 , C22B34/34 , H01L21/28 , H01L21/285 , H01L29/49 , H01L29/46
CPC分类号： C22B34/34 , H01L21/28079 , H01L21/28097 , H01L21/285 , H01L29/495 , H01L29/4975 , Y10T428/12528 , Y10T428/12674 , Y10T428/12833
摘要： There is provided a high-purity molybdenum target or high-purity molybdenum silicide target for LSI electrodes which comprises a high-purity metallic molybdenum having an alkali metal content of not more than 100 ppb and a radioactive element content of not more than 10 ppb. Further, a process is provided for producing such target comprising a wet purification processing followed by a series of dry processings.

3. 发明授权

US5663428A Method for producing aromatic carboxylic acids 失效
标题翻译：芳香族羧酸的制造方法
公开(公告)号：US5663428A
公开(公告)日：1997-09-02
申请号：US578028
申请日：1995-12-26
申请人： Hideo Oikawa , Hiroshi Fukuhara
发明人： Hideo Oikawa , Hiroshi Fukuhara
IPC分类号： B01J31/04 , C07B61/00 , C07C51/265 , C07C63/26
CPC分类号： C07C63/26 , C07C51/265 , Y02P20/52
摘要： A method for producing aromatic carboxylic acids which comprises oxidizing a starting compound selected from the group consisting of alkyl substituted aromatic hydrocarbons and partially oxidized alkyl substituted aromatic hydrocarbons with a molecular oxygen containing gas in the presence of at least one additive selected from the group consisting of aliphatic hydrocarbons, alicyclic hydrocarbons, aliphatic alcohols, alicyclic alcohols, aldehydes, carboxylic acids and ketones and in the presence of a catalyst comprising a heavy metal compound and a bromine compound in a reaction solvent. The aliphatic alcohols, alicyclic alcohols, aldehydes, carboxylic acids and ketones have ten to thirty carbon atoms in the molecule.
摘要翻译：一种生产芳族羧酸的方法，包括在至少一种选自以下的添加剂的存在下，用含有分子氧的气体氧化选自烷基取代的芳族烃和部分氧化的烷基取代的芳族烃的起始化合物：脂肪族烃，脂环族烃，脂族醇，脂环族醇，醛，羧酸和酮，并且在反应溶剂中在包含重金属化合物和溴化合物的催化剂存在下进行。脂族醇，脂环族醇，醛，羧酸和酮在分子中具有10至30个碳原子。

4. 发明授权

US4557036A Semiconductor device and process for manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US4557036A
公开(公告)日：1985-12-10
申请号：US479135
申请日：1983-03-25
申请人： Hakaru Kyuragi , Hideo Oikawa
发明人： Hakaru Kyuragi , Hideo Oikawa
IPC分类号： H01L21/285 , H01L21/768 , H01L23/485 , H01L21/28
CPC分类号： H01L21/28512 , H01L21/76801 , H01L21/76825 , H01L21/76828 , H01L21/76834 , H01L23/485 , H01L2924/0002 , Y10S148/103 , Y10S148/105
摘要： A multilayer structure comprising a Si layer/ a refractory metal oxide layer/ a refractory metal layer/ is subjected to annealing in an atmosphere of hydrogen or an inert gas mixed with hydrogen, thereby converting the multilayer structure into a multilayer structure comprising a Si layer/an inner SiO.sub.2 layer formed by internal oxidation of Si/a refractory metal layer. The inner SiO.sub.2 layer is selectively formed only on the surface of the refractory metal layer, since Si is internally oxidized from the side of the refractory metal layer. In case of gate electrode of a MISFET, the gate electrode and a contact hole for source or drain electrode are positioned in self-alignment with each other via the inner SiO.sub.2 layer. The distance between the gate electrode and the source or drain electrode is determined by the thickness of the inner SiO.sub.2 layer. A semiconductor device with a high density and a high speed is realized.
摘要翻译：包含Si层/难熔金属氧化物层/难熔金属层的多层结构在氢气或与氢气混合的惰性气体气氛中进行退火，由此将多层结构转化为包括Si层/ 通过Si / a难熔金属层的内部氧化形成的内部SiO 2层。内部SiO 2层仅选择性地形成在难熔金属层的表面上，因为Si从难熔金属层的一侧内部被氧化。在MISFET的栅电极的情况下，栅电极和源电极或漏电极的接触孔经由内部SiO 2层彼此自对准。栅极电极和源极或漏极之间的距离由内部SiO 2层的厚度决定。实现了高密度和高速度的半导体器件。

5. 发明授权

US5320979A Method of connecting wirings through connection hole 失效
标题翻译：通过连接孔连接布线的方法
公开(公告)号：US5320979A
公开(公告)日：1994-06-14
申请号：US101780
申请日：1993-08-03
申请人： Chisato Hashimoto , Katsuyuki Machida , Hideo Oikawa
发明人： Chisato Hashimoto , Katsuyuki Machida , Hideo Oikawa
IPC分类号： H01L21/311 , H01L21/768 , H01L21/441 , C23F1/00
CPC分类号： H01L21/76804 , H01L21/31116 , Y10S438/978
摘要： A method includes the steps of forming an insulating layer on a first conductive layer, forming a connection hole in the insulating layer, performing etching using an ion having a very low etching rate with respect to the first conductive layer and a high etching rate with respect to the insulating layer, thereby forming a taper on a side wall of the connection hole, and forming a second conductive layer on the first layer and the insulating layer. A typical example of an etching ion is an oxygen ion.
摘要翻译：一种方法包括以下步骤：在第一导电层上形成绝缘层，在绝缘层中形成连接孔，使用相对于第一导电层具有非常低蚀刻速率的离子进行蚀刻，并且相对于到绝缘层，从而在连接孔的侧壁上形成锥形，并在第一层和绝缘层上形成第二导电层。蚀刻离子的典型实例是氧离子。

6. 发明授权

US5013775A Sizing composition and sizing method 失效
标题翻译：施胶组合和施胶方法
公开(公告)号：US5013775A
公开(公告)日：1991-05-07
申请号：US343903
申请日：1989-04-27
申请人： Hideo Oikawa , Masatomi Ogawa , Kiyoshi Iwai , Mayumi Narushima
发明人： Hideo Oikawa , Masatomi Ogawa , Kiyoshi Iwai , Mayumi Narushima
IPC分类号： D21H17/17 , D21H17/37 , D21H17/42 , D21H17/44
CPC分类号： D21H17/44 , D21H17/17 , D21H17/375 , D21H17/42
摘要： A novel paper sizing composition comprising a ketene dimer and a hydrophilic vinyl polymer containing an alkylmercaptan having 6-22 carbon atoms. The composition has excellent storage and mechanical stability and sizing effect.

7. 发明授权

US5254766A Process for producing alkyl-substituted aromatic hydrocarbon using heteropolyacid salts 失效
标题翻译：使用杂多酸盐生产烷基取代芳烃的方法
公开(公告)号：US5254766A
公开(公告)日：1993-10-19
申请号：US773264
申请日：1991-10-09
申请人： Terunori Fujita , Kazunori Takahata , Hiroyasu Ohno , Masayasu Ishibashi , Hideo Oikawa
发明人： Terunori Fujita , Kazunori Takahata , Hiroyasu Ohno , Masayasu Ishibashi , Hideo Oikawa
IPC分类号： C07C2/70
CPC分类号： C07C2/70 , C07C2527/18
摘要： A process for producing an alkyl-substituted aromatic hydrocarbon, which comprises alkylating an aromatic hydrocarbon with an alkylating agent in the presence of a heteropoly-acid or a salt thereof such as phosphorus tungstate and silicon tungstate as a catalyst. The process is particularly useful for preparing alkyl-substituted naphthalene or naphthalene derivatives.

8. 发明授权

US4732761A Thin film forming apparatus and method 失效
标题翻译：薄膜成膜装置及方法
公开(公告)号：US4732761A
公开(公告)日：1988-03-22
申请号：US842244
申请日：1986-03-21
申请人： Katsuyuki Machida , Hideo Oikawa
发明人： Katsuyuki Machida , Hideo Oikawa
IPC分类号： H01L21/205 , C23C14/35 , C23C16/40 , C23C16/48 , C23C16/511 , H01L21/302 , H01L21/3065 , H01L21/31 , H01L21/3105 , H01L21/768 , B05D5/12
CPC分类号： C23C16/48 , C23C14/357 , C23C16/402 , C23C16/511 , H01L21/31051 , H01L21/31055 , H01L21/76819
摘要： An apparatus for forming a thin film to planarize a surface of a semiconductor device having convex and concave regions, comprising a plasma generating chamber into which are an Ar gas and an O.sub.2 gas are supplied so that a plasma is produced; a specimen chamber in which a substrate electrode upon which a specimen substrate is placed and which is in partial communication with the plasma generating chamber and into which an SiH.sub.4 gas as a film material is introduced; and a bias power source for applying a bias voltage to the substrate electrode so that ions sufficiently impinge substantially vertically upon the electrode to perform ion etching. First, an SiO.sub.2 film is deposited on the specimen substrate by using the O.sub.2 and SiH.sub.4 gases. In the next step, Ar plasma and O.sub.2 plasma are produced in the plasma generating chamber and a bias voltage is applied to the substrate electrode. As a result, deposition and etching occur simultaneously, whereby the surface of the device having convex and concave regions is planarized with an SiO.sub.2 film. Submicron interconnections can be planarized with easily setting planarization conditions at a low rf power. The planarization time can be shortened.
摘要翻译：一种用于形成薄膜以平坦化具有凸和凹区域的半导体器件的表面的装置，包括其中供给有Ar气体和O 2气体的等离子体产生室，从而产生等离子体; 试样室，其中放置有试样基板并与等离子体发生室部分连通的基板电极，并且引入作为膜材料的SiH 4气体; 以及偏置电源，用于向衬底电极施加偏置电压，使得离子充分地基本垂直地撞击在电极上以进行离子蚀刻。首先，使用O 2和SiH 4气体在样品基板上沉积SiO 2膜。在下一步骤中，在等离子体发生室中产生Ar等离子体和O 2等离子体，并且将偏置电压施加到衬底电极。结果，沉积和蚀刻同时发生，由此具有凸区域的器件的表面被SiO 2膜平坦化。亚微米互连可以平坦化，容易设置低功率的平坦化条件。可以缩短平坦化时间。

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