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1. 发明申请

US20080081478A1 METHOD FOR PLANARIZATION OF WAFER AND METHOD FOR FORMATION OF ISOLATION STRUCTURE IN TOP METAL LAYER 有权
标题翻译：用于平坦化的方法和在顶部金属层中形成隔离结构的方法
公开(公告)号：US20080081478A1
公开(公告)日：2008-04-03
申请号：US11852918
申请日：2007-09-10
申请人： Herb He Huang , Xianyong Pu , Yi'nan Han , Yiqun Chen
发明人： Herb He Huang , Xianyong Pu , Yi'nan Han , Yiqun Chen
IPC分类号： H01L21/311
CPC分类号： G02F1/133553 , G02F1/136277 , G02F2201/48
摘要： The invention discloses a planarization method for a wafer having a surface layer with a recess, comprises: forming an etching-resist layer on the surface layer to fill the entire recess; etching the etching-resist layer and the surface layer, till the surface layer outside the recess is flush to or lower than the bottom of the recess, the etching speed of the surface layer being higher than that of the etching-resist layer; removing the etching-resist layer; and etching the surface layer to a predetermined depth. The method can avoid concentric ring recesses on the surface of the wafer resulted from a chemical mechanical polishing (CMP) process in the prior art, and can be used to obtain a wafer surface suitable for optical applications.
摘要翻译：本发明公开了一种具有具有凹部的表面层的晶片的平面化方法，包括：在表面层上形成抗蚀剂层以填充整个凹部; 蚀刻抗蚀剂层和表面层，直到凹部外表面层平齐或低于凹部的底部，表面层的蚀刻速度高于抗蚀剂层的蚀刻速度; 去除抗蚀剂层; 并将表面层蚀刻到预定深度。该方法可以避免由现有技术中的化学机械抛光（CMP）工艺引起的晶片表面上的同心环凹槽，并且可以用于获得适合于光学应用的晶片表面。

2. 发明授权

US08058175B2 Method for planarization of wafer and method for formation of isolation structure in top metal layer 有权
标题翻译：晶圆平面化方法及顶层金属层隔离结构形成方法
公开(公告)号：US08058175B2
公开(公告)日：2011-11-15
申请号：US11852918
申请日：2007-09-10
申请人： Herb He Huang , Xianyong Pu , Yi'nan Han , Yiqun Chen
发明人： Herb He Huang , Xianyong Pu , Yi'nan Han , Yiqun Chen
IPC分类号： H01L21/311 , H01B13/00 , C30B33/00 , B44C1/22
CPC分类号： G02F1/133553 , G02F1/136277 , G02F2201/48
摘要： The invention discloses a planarization method for a wafer having a surface layer with a recess, comprises: forming an etching-resist layer on the surface layer to fill the entire recess; etching the etching-resist layer and the surface layer, till the surface layer outside the recess is flush to or lower than the bottom of the recess, the etching speed of the surface layer being higher than that of the etching-resist layer; removing the etching-resist layer; and etching the surface layer to a predetermined depth. The method can avoid concentric ring recesses on the surface of the wafer resulted from a chemical mechanical polishing (CMP) process in the prior art, and can be used to obtain a wafer surface suitable for optical applications.
摘要翻译：本发明公开了一种具有具有凹部的表面层的晶片的平面化方法，包括：在表面层上形成抗蚀剂层以填充整个凹部; 蚀刻抗蚀剂层和表面层，直到凹部外表面层平齐或低于凹部的底部，表面层的蚀刻速度高于抗蚀剂层的蚀刻速度; 去除抗蚀剂层; 并将表面层蚀刻到预定深度。该方法可以避免在现有技术中由化学机械抛光（CMP）工艺产生的晶片表面上的同心环凹槽，并且可以用于获得适合于光学应用的晶片表面。

3. 发明申请

US20120009794A1 Method for Planarization of Wafer and Method for Formation of Isolation Structure in Top Metal Layer 审中-公开
标题翻译：晶圆平面化方法及顶层金属层隔离结构形成方法
公开(公告)号：US20120009794A1
公开(公告)日：2012-01-12
申请号：US13240987
申请日：2011-09-22
申请人： Herb He Huang , Xianyong Pu , Yi'nan Han , Yiqun Chen
发明人： Herb He Huang , Xianyong Pu , Yi'nan Han , Yiqun Chen
IPC分类号： H01L21/311
CPC分类号： G02F1/133553 , G02F1/136277 , G02F2201/48
摘要： The invention discloses a planarization method for a wafer having a surface layer with a recess, comprises: forming an etching-resist layer on the surface layer to fill the entire recess; etching the etching-resist layer and the surface layer, till the surface layer outside the recess is flush to or lower than the bottom of the recess, the etching speed of the surface layer being higher than that of the etching-resist layer; removing the etching-resist layer; and etching the surface layer to a predetermined depth. The method can avoid concentric ring recesses on the surface of the wafer resulted from a chemical mechanical polishing (CMP) process in the prior art, and can be used to obtain a wafer surface suitable for optical applications.
摘要翻译：本发明公开了一种具有具有凹部的表面层的晶片的平面化方法，包括：在表面层上形成抗蚀剂层以填充整个凹部; 蚀刻抗蚀剂层和表面层，直到凹部外表面层平齐或低于凹部的底部，表面层的蚀刻速度高于抗蚀剂层的蚀刻速度; 去除抗蚀剂层; 并将表面层蚀刻到预定深度。该方法可以避免由现有技术中的化学机械抛光（CMP）工艺引起的晶片表面上的同心环凹槽，并且可以用于获得适合于光学应用的晶片表面。

4. 发明申请

US20110237009A1 LCOS DISPLAY UNIT AND METHOD FOR FORMING THE SAME 有权
标题翻译： LCOS显示单元及其形成方法
公开(公告)号：US20110237009A1
公开(公告)日：2011-09-29
申请号：US13155870
申请日：2011-06-08
申请人： Herb He HUANG , Xianyong Pu , Jianhong Mao , Yiqun Chen , Jing Fu , Zhongshan Hong , Yanghui Xiang
发明人： Herb He HUANG , Xianyong Pu , Jianhong Mao , Yiqun Chen , Jing Fu , Zhongshan Hong , Yanghui Xiang
IPC分类号： H01L31/18
CPC分类号： G02F1/136277 , G02F1/133553 , G02F1/136209 , H01L27/12 , H01L27/1214 , H01L27/13 , H01L29/78633 , H01L29/78654
摘要： An embodiment of the present invention discloses a Liquid Crystal on Silicon (LCOS) display unit, in which a Metal-Insulator-Metal (MIM) capacitor consisting of a micromirror layer, a insulation layer and a light shielding layer is formed by grounding the light shielding layer on a pixel switch circuit layer. Therefore the pixel switch circuit and the capacitor are in vertical distribution, that is, the switch circuit and the capacitor both have an allowable design area of the size of one pixel. Another embodiment of the present invention provides a method for forming a Liquid Crystal on Silicon (LCOS) display unit.
摘要翻译：本发明的实施例公开了一种液晶硅（LCOS）显示单元，其中通过将光接地而形成由微镜层，绝缘层和遮光层组成的金属 - 绝缘体 - 金属（MIM）电容器像素开关电路层上的屏蔽层。因此，像素开关电路和电容器处于垂直分布，即开关电路和电容器都具有允许的一个像素尺寸的设计区域。本发明的另一个实施例提供了一种用于形成硅晶体（LCOS）显示单元的方法。

5. 发明授权

US07995165B2 LCOS display unit and method for forming the same 有权
标题翻译： LCOS显示单元及其形成方法
公开(公告)号：US07995165B2
公开(公告)日：2011-08-09
申请号：US11851331
申请日：2007-09-06
申请人： Herb He Huang , Xianyong Pu , Jianhong Mao , Yiqun Chen , Jing Fu , Zhongshan Hong , Yanghui Xiang
发明人： Herb He Huang , Xianyong Pu , Jianhong Mao , Yiqun Chen , Jing Fu , Zhongshan Hong , Yanghui Xiang
IPC分类号： G02F1/1335
CPC分类号： G02F1/136277 , G02F1/133553 , G02F1/136209 , H01L27/12 , H01L27/1214 , H01L27/13 , H01L29/78633 , H01L29/78654
摘要： An embodiment of the present invention discloses a Liquid Crystal on Silicon (LCOS) display unit, in which a Metal-Insulator-Metal (MIM) capacitor consisting of a micromirror layer, a insulation layer and a light shielding layer is formed by grounding the light shielding layer on a pixel switch circuit layer. Therefore the pixel switch circuit and the capacitor are in vertical distribution, that is, the switch circuit and the capacitor both have an allowable design area of the size of one pixel. Another embodiment of the present invention provides a method for forming a Liquid Crystal on Silicon (LCOS) display unit.
摘要翻译：本发明的实施例公开了一种液晶硅（LCOS）显示单元，其中通过将光接地而形成由微镜层，绝缘层和遮光层组成的金属 - 绝缘体 - 金属（MIM）电容器像素开关电路层上的屏蔽层。因此，像素开关电路和电容器处于垂直分布，即开关电路和电容器都具有允许的一个像素尺寸的设计区域。本发明的另一个实施例提供了一种用于形成硅晶体（LCOS）显示单元的方法。

6. 发明授权

US08379183B2 LCOS display unit and method for forming the same 有权
标题翻译： LCOS显示单元及其形成方法
公开(公告)号：US08379183B2
公开(公告)日：2013-02-19
申请号：US13155870
申请日：2011-06-08
申请人： Herb He Huang , Xianyong Pu , Jianhong Mao , Yiqun Chen , Jing Fu , Zhongshan Hong , Yanghui Xiang
发明人： Herb He Huang , Xianyong Pu , Jianhong Mao , Yiqun Chen , Jing Fu , Zhongshan Hong , Yanghui Xiang
IPC分类号： G02F1/13 , G02F1/1335
CPC分类号： G02F1/136277 , G02F1/133553 , G02F1/136209 , H01L27/12 , H01L27/1214 , H01L27/13 , H01L29/78633 , H01L29/78654
摘要： An embodiment of the present invention discloses a Liquid Crystal on Silicon (LCOS) display unit, in which a Metal-Insulator-Metal (MIM) capacitor consisting of a micromirror layer, a insulation layer and a light shielding layer is formed by grounding the light shielding layer on a pixel switch circuit layer. Therefore the pixel switch circuit and the capacitor are in vertical distribution, that is, the switch circuit and the capacitor both have an allowable design area of the size of one pixel. Another embodiment of the present invention provides a method for forming a Liquid Crystal on Silicon (LCOS) display unit.
摘要翻译：本发明的实施例公开了一种液晶硅（LCOS）显示单元，其中通过将光接地而形成由微镜层，绝缘层和遮光层组成的金属 - 绝缘体 - 金属（MIM）电容器像素开关电路层上的屏蔽层。因此，像素开关电路和电容器处于垂直分布，即开关电路和电容器都具有允许的一个像素尺寸的设计区域。本发明的另一个实施例提供了一种用于形成硅晶体（LCOS）显示单元的方法。

7. 发明申请

US20080129911A1 LCOS DISPLAY UNIT AND METHOD FOR FORMING THE SAME 有权
标题翻译： LCOS显示单元及其形成方法
公开(公告)号：US20080129911A1
公开(公告)日：2008-06-05
申请号：US11851331
申请日：2007-09-06
申请人： Herb He HUANG , Xianyong Pu , Jianhong Mao , Yiqun Chen , Jing Fu , Zhongshan Hong , Yanghui Xiang
发明人： Herb He HUANG , Xianyong Pu , Jianhong Mao , Yiqun Chen , Jing Fu , Zhongshan Hong , Yanghui Xiang
IPC分类号： G02F1/136 , H01L21/77
CPC分类号： G02F1/136277 , G02F1/133553 , G02F1/136209 , H01L27/12 , H01L27/1214 , H01L27/13 , H01L29/78633 , H01L29/78654
摘要： An embodiment of the present invention discloses a Liquid Crystal on Silicon (LCOS) display unit, in which a Metal-Insulator-Metal (MIM) capacitor consisting of a micromirror layer, a insulation layer and a light shielding layer is formed by grounding the light shielding layer on a pixel switch circuit layer. Therefore the pixel switch circuit and the capacitor are in vertical distribution, that is, the switch circuit and the capacitor both have an allowable design area of the size of one pixel. Another embodiment of the present invention provides a method for forming a Liquid Crystal on Silicon (LCOS) display unit.
摘要翻译：本发明的实施例公开了一种液晶硅（LCOS）显示单元，其中通过将光接地而形成由微镜层，绝缘层和遮光层组成的金属 - 绝缘体 - 金属（MIM）电容器像素开关电路层上的屏蔽层。因此，像素开关电路和电容器处于垂直分布，即开关电路和电容器都具有允许的一个像素尺寸的设计区域。本发明的另一个实施例提供了一种用于形成硅晶体（LCOS）显示单元的方法。

8. 发明授权

US07938979B2 Method of fabricating mirrors for liquid crystal on silicon display device 有权
标题翻译：在硅显示装置上制造液晶反射镜的方法
公开(公告)号：US07938979B2
公开(公告)日：2011-05-10
申请号：US11862971
申请日：2007-09-27
申请人： Xianyong Pu , Jianhong Mao , Yiqun Chen , Jing Fu
发明人： Xianyong Pu , Jianhong Mao , Yiqun Chen , Jing Fu
IPC分类号： C03C15/00 , C03C25/68
CPC分类号： G02F1/133553 , G02F1/136277
摘要： The present invention discloses a method of fabricating mirrors for LCOS (Liquid Crystal On Silicon) display device, including: forming a dielectric layer over a silicon substrate; forming a stop layer over the dielectric layer; forming an insulation layer over the stop layer; etching the insulation layer and the stop layer until the dielectric layer is exposed, thus forming an insulation fence; forming a metal layer over the dielectric layer and the insulation fence; and planarizing the metal layer and the insulation fence, hence the planarized insulation fence isolating the metal layer into mirror array. Therefore no pits can be generated in the metal layer and no pits can be generated in the mirrors formed subsequently, resulting in high quality mirror surface.
摘要翻译：本发明公开了一种制造用于LCOS（硅晶体）显示器件的反射镜的方法，包括：在硅衬底上形成电介质层; 在介电层上形成停止层; 在所述停止层上形成绝缘层; 蚀刻绝缘层和停止层，直到电介质层露出，从而形成绝缘栅栏; 在电介质层和绝缘栅上形成金属层; 并且平坦化金属层和绝缘栅栏，因此将金属层隔离成反射镜阵列的平坦化绝缘栅栏。因此，在金属层中不会产生凹坑，并且在随后形成的反射镜中不会产生凹坑，从而产生高质量的镜面。

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