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1. 发明申请

US20080202460A1 VARIABLE VALVE TIMING MECHANISM 有权
标题翻译：可变阀定时机构
公开(公告)号：US20080202460A1
公开(公告)日：2008-08-28
申请号：US12032232
申请日：2008-02-15
申请人： Hayato MAEHARA , Takaaki TSUKUI , Toru GUNJI , Shinji SAITO
发明人： Hayato MAEHARA , Takaaki TSUKUI , Toru GUNJI , Shinji SAITO
IPC分类号： F01L1/34
CPC分类号： F01L1/047 , F01L1/356 , F01L2001/0537 , F01L2001/34496 , Y10T74/2101
摘要： In a variable valve timing mechanism, a valve-lifting cam member is fitted, slidably in tile circumferential direction, onto a camshaft that is driven to rotate in synchronization with a crankshaft of a four-stroke cycle internal combustion engine. An eccentric collar is set between a driving collar fixed on the camshaft and the valve-lifting cam member. A driving projection is formed in the driving collar and engages with one of sandwiching portions of the eccentric collar. A driven protrusion is formed in the valve-lifting cam member and engages with another one of the sandwiching portions of the eccentric collar. A linkage mechanism includes the eccentric collar, the drive, and the driven protrusions. The variable valve timing mechanism adjusts the timing of opening and closing of the valve while the rotational phase of the valve-lifting cam member is cyclically varied relative to the camshaft by the eccentricity of the eccentric collar.
摘要翻译：在可变气门正时机构中，气门提升凸轮构件以瓦片圆周方向可滑动地装配到与四冲程循环内燃机的曲轴同步地被驱动旋转的凸轮轴上。偏心轴环设置在固定在凸轮轴上的驱动轴环和气门提升凸轮构件之间。驱动凸缘形成在驱动轴环中并与偏心轴环的夹层部分中的一个接合。驱动突起形成在提升凸轮构件中并与偏心轴环的另一个夹紧部分接合。连杆机构包括偏心轴环，驱动器和从动突起。可变气门正时机构调节阀的打开和关闭的时间，同时通过偏心轴环的偏心度，提升凸轮构件的旋转相位相对于凸轮轴循环变化。

2. 发明申请

US20080202458A1 ENGINE 有权
标题翻译：发动机
公开(公告)号：US20080202458A1
公开(公告)日：2008-08-28
申请号：US12035454
申请日：2008-02-22
申请人： Hayato MAEHARA , Shinji SAITO
发明人： Hayato MAEHARA , Shinji SAITO
IPC分类号： F02D13/06 , F01L1/34
CPC分类号： F01L13/0005 , F01L2001/3443 , F02D13/06
摘要： A valve stopping mechanism wherein when hydraulic fluid pressure is low a cylinder operating state is set and a response of a switch from a cylinder stop state to the cylinder operating state is high. An intake valve and an exhaust valve, a first intake valve spring and a first exhaust valve spring are provided for energizing the valves in the direction of closing the valves, valve drive cams, valve stopping mechanisms, on the basis of a stop hydraulic fluid pressure and energization of plunger springs, for selectively generating valve operating and valve stop states. The valve stopping mechanism generates the operating state when the energizing force of the plunger spring is larger than the press force of the stop hydraulic fluid pressure and generates the stop state when the press force of the stop hydraulic fluid pressure is larger than the energizing force of the plunger spring.
摘要翻译：一种阀停止机构，其中当液压流体压力低时，气缸操作状态被设定，并且开关从气缸停止状态到气缸操作状态的响应高。提供进气阀和排气阀，第一进气阀弹簧和第一排气阀弹簧，用于根据停止液压流体压力关闭阀，阀驱动凸轮，阀止动机构的方向对阀进行通电并激活柱塞弹簧，用于选择性地产生阀门操作和阀门停止状态。当止动液压油的压力大于止动液压油的压力大于止动液压油压力时，阀停止机构产生运转状态，当停止液压油压力大于柱塞弹簧。

3. 发明申请

US20110222149A1 LIGHT-EMITTING APPARATUS, DISPLAY APPARATUS, LIGHT EMITTER, AND METHOD OF FABRICATING LIGHT EMITTER 失效
标题翻译：发光装置，显示装置，发光体和制造发光体的方法
公开(公告)号：US20110222149A1
公开(公告)日：2011-09-15
申请号：US12874778
申请日：2010-09-02
申请人： Shinji SAITO , Yasushi Hattori , Yoshiyuki Harada , Shinya Nunoue
发明人： Shinji SAITO , Yasushi Hattori , Yoshiyuki Harada , Shinya Nunoue
IPC分类号： G03B21/56 , F21V9/16 , H01J1/62 , B05D5/00
CPC分类号： G03B21/204 , F21K9/232 , F21K9/64 , H01L33/504
摘要： According to the embodiments, an easy-to-fabricate light-emitting apparatus is provided in which a plurality of phosphors is disposed so as not to overlap each other. The light-emitting apparatus includes a light source that emits excitation light; a substrate having a protrusion and recess configuration where first planes and second planes which intersect the first planes are formed periodically; first phosphor layers formed on the first planes and absorbing the excitation light to emit a first fluorescence; and second phosphor layers formed on the second planes and absorbing the excitation light to emit a second fluorescence with a wavelength different from that of the first fluorescence.
摘要翻译：根据实施例，提供了一种易于制造的发光装置，其中多个荧光体被布置为不彼此重叠。发光装置包括发射激发光的光源; 具有突起和凹部构造的基板，其中周期性地形成与第一平面相交的第一平面和第二平面; 形成在第一平面上并吸收激发光以发射第一荧光的第一荧光体层; 以及形成在所述第二平面上并吸收所述激发光以发射具有与所述第一荧光的波长不同的波长的第二荧光的第二荧光体层。

4. 发明申请

US20120273794A1 SEMICONDUCTOR LIGHT EMITTING DEVICE, WAFER, AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
标题翻译：半导体发光装置，散热器和制造半导体发光装置的方法
公开(公告)号：US20120273794A1
公开(公告)日：2012-11-01
申请号：US13407191
申请日：2012-02-28
申请人： Shinji SAITO , Shinya Nunoue , Rei Hashimoto
发明人： Shinji SAITO , Shinya Nunoue , Rei Hashimoto
IPC分类号： H01L33/32 , H01L33/00 , H01L29/06 , H01L33/20
CPC分类号： H01L33/24 , B82Y20/00 , H01S5/0217 , H01S5/3201 , H01S5/3211 , H01S5/3428 , H01S5/34333 , H01S5/4037 , H01S5/4056 , H01S2301/173 , H01S2301/176 , H01S2304/02 , H01S2304/04
摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, an active layer, and a second semiconductor layer. The first layer has a first upper surface and a first side surface. The active layer has a first portion covering the first upper surface and having a second upper surface, and a second portion covering the first side surface and having a second side surface. The second layer has a third portion covering the second upper surface, and a fourth portion covering the second side surface. The first and second layers include a nitride semiconductor. The first portion along a stacking direction has a thickness thicker than the second portion along a direction from the first side surface toward the second side surface. The third portion along the stacking direction has a thickness thicker than the fourth portion along the direction.
摘要翻译：根据一个实施例，半导体发光器件包括第一半导体层，有源层和第二半导体层。第一层具有第一上表面和第一侧面。有源层具有覆盖第一上表面并具有第二上表面的第一部分和覆盖第一侧表面并具有第二侧表面的第二部分。第二层具有覆盖第二上表面的第三部分和覆盖第二侧表面的第四部分。第一层和第二层包括氮化物半导体。沿着层叠方向的第一部分沿着从第一侧面朝向第二侧面的方向具有比第二部分厚的厚度。沿堆叠方向的第三部分沿着该方向具有比第四部分厚的厚度。

5. 发明申请

US20120056524A1 LIGHT EMITTER AND LIGHT EMITTING DEVICE 失效
标题翻译：发光二极管和发光装置
公开(公告)号：US20120056524A1
公开(公告)日：2012-03-08
申请号：US13034128
申请日：2011-02-24
申请人： Shinji SAITO , Yasushi Hattori , Rei Hashimoto , Shinya Nunoue
发明人： Shinji SAITO , Yasushi Hattori , Rei Hashimoto , Shinya Nunoue
IPC分类号： H01J1/63
CPC分类号： H05B33/145
摘要： A light emitter according to one embodiment has a fiber shape. And it includes a core portion containing a light emitting material, the material absorbing excitation light and emitting light having a wavelength longer than a wavelength of the excitation light. And also it includes a clad portion provided outside the core portion, the clad portion having a first region and second regions, the second regions being periodically formed in the first region, the second regions having a refractive index higher than a refractive index of a first region, the refractive index of the first region being equal to or higher than a refractive index of the core portion.
摘要翻译：根据一个实施例的发光体具有纤维形状。并且它包括含有发光材料的芯部分，该材料吸收激发光并发射具有比激发光的波长更长的波长的光。并且还包括设置在芯部外侧的包层部分，所述包层部分具有第一区域和第二区域，所述第二区域周期性地形成在所述第一区域中，所述第二区域的折射率高于第一区域的折射率第一区域的折射率等于或高于芯部分的折射率。

6. 发明申请

US20120002137A1 LIQUID CRYSTAL DISPLAY DEVICE 失效
标题翻译：液晶显示装置
公开(公告)号：US20120002137A1
公开(公告)日：2012-01-05
申请号：US13038728
申请日：2011-03-02
申请人： Shinji SAITO , Yasushi Hattori , Shinya Nunoue
发明人： Shinji SAITO , Yasushi Hattori , Shinya Nunoue
IPC分类号： G02F1/13357
CPC分类号： G02B6/0055 , G02B5/0215 , G02B5/0231 , G02B5/0284 , G02B6/0096 , G02F1/133606 , G02F1/133615
摘要： A liquid crystal display device of an embodiment has: a semiconductor laser diode emitting a first laser beam; a first reflecting unit configured to reflect the first laser beam and form a second laser beam having a one-dimensionally spread distribution; and a second reflecting unit configured to reflect the second laser beam and form a third laser beam having a two-dimensionally spread distribution. The device also has: an optical switch using liquid crystal, the optical switch being configured to control passage and blocking of the third laser beam; and a first scattering unit scattering the third laser beam.
摘要翻译：实施例的液晶显示装置具有：发射第一激光束的半导体激光二极管; 第一反射单元，被配置为反射第一激光束并形成具有一维扩展分布的第二激光束; 以及第二反射单元，被配置为反射第二激光束并形成具有二维扩散分布的第三激光束。该装置还具有：使用液晶的光开关，该光开关被配置为控制第三激光束的通过和阻塞; 以及散射第三激光束的第一散射单元。

7. 发明申请

US20080194050A1 SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND LIGHT-EMITTING DEVICE 有权
标题翻译：半导体发光元件和发光器件
公开(公告)号：US20080194050A1
公开(公告)日：2008-08-14
申请号：US12098309
申请日：2008-04-04
申请人： Shinji SAITO , Shinya Nunoue
发明人： Shinji SAITO , Shinya Nunoue
IPC分类号： H01L33/00
CPC分类号： H01L33/385 , H01L33/20 , H01L33/44 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor light-emitting element has a laminated section which has an active layer made of a semiconductor, and first and second clad layers each being disposed to sandwich the active layer and made of a semiconductor, a pair of first high-reflection layers each being disposed to sandwich the active layer in a first direction orthogonal to the laminated direction of the laminated section, and a low-reflection layer and a second high-reflection layer each being disposed to sandwich the active layer in a second direction orthogonal to the laminated direction and crossing to the first direction.
摘要翻译：半导体发光元件具有层叠部，该层叠部具有由半导体构成的有源层，第一和第二包层各自设置为夹持有源层并由半导体构成，一对第一高反射层为被配置成沿着与所述层叠部的层叠方向正交的第一方向夹持所述有源层，以及低反射层和第二高反射层，各自设置成沿与所述层叠方向正交的第二方向夹持所述有源层并跨越第一个方向。

8. 发明申请

US20120032215A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：半导体发光器件
公开(公告)号：US20120032215A1
公开(公告)日：2012-02-09
申请号：US13034329
申请日：2011-02-24
申请人： Shinji SAITO , Jongil Hwang , Shinya Nunoue
发明人： Shinji SAITO , Jongil Hwang , Shinya Nunoue
IPC分类号： H01L33/60 , H01L33/32
CPC分类号： H01S5/164 , B82Y20/00 , H01S5/0202 , H01S5/22 , H01S5/2214 , H01S5/3063 , H01S5/34333 , H01S2304/04
摘要： A semiconductor light emitting device of one embodiment includes: a substrate; an n-type layer of an n-type nitride semiconductor on the substrate; an active layer of a nitride semiconductor on the n-type semiconductor layer; a p-type layer of a p-type nitride semiconductor on the active layer. The p-type layer has a ridge stripe shape. The device has an end-face layer of a nitride semiconductor formed on an end face of the n-type semiconductor layer, the active layer, and the p-type semiconductor layer. The end face is perpendicular to an extension direction of the ridge stripe shape. The end-face layer has band gap wider than the active layer. The end-face layer has Mg concentration in the range of 5E16 atoms/cm3 to 5E17 atoms/cm3 at a region adjacent to the p-type layer.
摘要翻译：一个实施例的半导体发光器件包括：衬底; n型氮化物半导体的n型层; n型半导体层上的氮化物半导体的有源层; 在有源层上的p型氮化物半导体的p型层。 p型层具有脊条形状。该器件具有形成在n型半导体层，有源层和p型半导体层的端面上的氮化物半导体的端面层。端面垂直于脊条形状的延伸方向。端面层具有比有源层宽的带隙。端面层在与p型层相邻的区域具有在5E16原子/ cm3至5E17原子/ cm3范围内的Mg浓度。

9. 发明申请

US20110216798A1 SEMICONDUCTOR LASER DEVICE AND METHOD OF MANUFACTURING THE SAME 失效
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US20110216798A1
公开(公告)日：2011-09-08
申请号：US12873821
申请日：2010-09-01
申请人： Maki SUGAI , Shinji SAITO , Rei HASHIMOTO , Yasushi HATTORI , Jongil HWANG , Masaki TOHYAMA , Shinya NUNOUE
发明人： Maki SUGAI , Shinji SAITO , Rei HASHIMOTO , Yasushi HATTORI , Jongil HWANG , Masaki TOHYAMA , Shinya NUNOUE
IPC分类号： H01S5/22 , H01S5/323 , H01L33/30
CPC分类号： H01L33/30 , H01S5/22 , H01S5/323
摘要： Embodiments describe a semiconductor laser device driven at low voltage and which is excellent for cleavage and a method of manufacturing the device. In one embodiment, the semiconductor laser device includes a GaN substrate; a semiconductor layer formed on the GaN substrate; a ridge formed in the semiconductor layer; a recess formed in the bottom surface of the GaN substrate. The recess has a depth less than the thickness of the GaN substrate. The device also has a notch deeper than the recess formed on a side surface of the GaN substrate and separated from the recess. In the semiconductor laser device, the total thickness of the GaN substrate and the semiconductor layer is 100 μm or more, and the distance between the top surface of the ridge and the bottom surface of the recess is 5 μm or more and 50 μm or less.
摘要翻译：实施例描述了在低电压下驱动且对于切割非常好的半导体激光器件及其制造方法。在一个实施例中，半导体激光器件包括GaN衬底; 形成在所述GaN衬底上的半导体层; 形成在半导体层中的脊; 形成在GaN衬底的底表面中的凹部。凹槽的深度小于GaN衬底的厚度。该器件还具有比形成在GaN衬底的侧表面上的凹部更深的凹口，并且与凹部分离。在半导体激光装置中，GaN衬底和半导体层的总厚度为100μm以上，脊的顶面与凹部的底面之间的距离为5μm以上且50μm以下。

10. 发明申请

US20100178721A1 SEMICONDUCTOR DEVICE, METHOD FOR FABRICATING AN ELECTRODE, AND METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件，用于制造电极的方法，以及制造半导体器件的方法
公开(公告)号：US20100178721A1
公开(公告)日：2010-07-15
申请号：US12539275
申请日：2009-08-11
申请人： Shinji SAITO , Shinya Nunoue , Toshiyuki Oka
发明人： Shinji SAITO , Shinya Nunoue , Toshiyuki Oka
IPC分类号： H01L31/0256 , H01L21/316
CPC分类号： H01S5/0425 , B82Y20/00 , H01L21/28575 , H01L29/2003 , H01L29/452 , H01L33/32 , H01L33/40 , H01S5/2231 , H01S5/34333 , H01S2301/173 , H01S2304/00
摘要： A semiconductor device includes a p-type nitride semiconductor layer (14); and a p-side electrode (18) including a palladium oxide film (30) connected to a surface of the nitride semiconductor layer (14).
摘要翻译：半导体器件包括p型氮化物半导体层（14）; 和包括与氮化物半导体层（14）的表面连接的氧化钯膜（30）的p侧电极（18）。

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