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1. 发明授权

US08436446B2 Method, structure, and design structure for a through-silicon-via Wilkinson power divider 有权
公开(公告)号：US08436446B2
公开(公告)日：2013-05-07
申请号：US13455725
申请日：2012-04-25
申请人： Hanyi Ding , Alvin J. Joseph , Wayne H. Woods, Jr.
发明人： Hanyi Ding , Alvin J. Joseph , Wayne H. Woods, Jr.
IPC分类号： H01L27/08
CPC分类号： G06F17/5077 , H01L23/481 , H01L2924/0002 , H01L2924/3011 , H01P5/16 , H01P11/007 , H01L2924/00
摘要： A method, structure, and design structure for a through-silicon-via Wilkinson power divider. A method includes: forming an input on a first side of a substrate; forming a first leg comprising a first through-silicon-via formed in the substrate, wherein the first leg electrically connects the input and a first output; forming a second leg comprising a second through-silicon-via formed in the substrate, wherein the second leg electrically connects the input and a second output, and forming a resistor electrically connected between the first output and the second output.

2. 发明授权

US08106728B2 Circuit structure and design structure for an optionally switchable on-chip slow wave transmission line band-stop filter and a method of manufacture 有权
标题翻译：用于可选择切换的片上慢波传输线带阻滤波器的电路结构和设计结构以及制造方法
公开(公告)号：US08106728B2
公开(公告)日：2012-01-31
申请号：US12424110
申请日：2009-04-15
申请人： Hanyi Ding , Kwan H. Lam , Guoan Wang , Wayne H. Woods, Jr.
发明人： Hanyi Ding , Kwan H. Lam , Guoan Wang , Wayne H. Woods, Jr.
IPC分类号： H01P3/08 , H01P1/203
CPC分类号： H01P1/203 , Y10T29/49155
摘要： The present invention generally relates to a circuit structure, design structure and method of manufacturing a circuit, and more specifically to a circuit structure and design structure for an on-chip slow wave transmission line band-stop filter and a method of manufacture. A structure includes an on-chip transmission line stub comprising a conditionally floating structure structured to provide increased capacitance to the on-chip transmission line stub when the conditionally floating structure is connected to ground.
摘要翻译：本发明一般涉及一种电路结构，电路制造的设计结构和方法，更具体地涉及用于片上慢波传输线带阻滤波器的电路结构和设计结构以及制造方法。一种结构包括片上传输线短截线，其包括有条件浮动结构，其被构造为当有条件浮动结构连接到地时为片上传输线短截线提供增加的电容。

3. 发明申请

US20090315641A1 Design Structure, Structure and Method for Providing an On-Chip Variable Delay Transmission Line With Fixed Characteristic Impedance 有权
标题翻译：提供具有固定特性阻抗的片上可变延迟传输线的设计结构，结构和方法
公开(公告)号：US20090315641A1
公开(公告)日：2009-12-24
申请号：US12144684
申请日：2008-06-24
申请人： Hanyi Ding , Wayne H. Woods, JR.
发明人： Hanyi Ding , Wayne H. Woods, JR.
IPC分类号： H01P1/18
CPC分类号： H01P9/00 , H01P1/184
摘要： A design structure, structure, and method for providing an on-chip variable delay transmission line with a fixed characteristic impedance. A method of manufacturing a transmission line structure includes forming a signal line of the transmission line structure, forming a first ground return structure that causes a first delay and a first characteristic impedance in the transmission line structure, and forming a second ground return structure that causes a second delay and a second characteristic impedance in the transmission line structure. The first delay is different from the second delay, and the first characteristic impedance is substantially the same as the second characteristic impedance.
摘要翻译：一种用于提供具有固定特性阻抗的片上可变延迟传输线的设计结构，结构和方法。制造传输线结构的方法包括形成传输线结构的信号线，形成在传输线结构中引起第一延迟和第一特性阻抗的第一接地返回结构，以及形成第二接地返回结构，其导致传输线结构中的第二延迟和第二特性阻抗。第一延迟与第二延迟不同，第一特征阻抗基本上与第二特征阻抗相同。

4. 发明授权

US08898605B2 On-chip tunable transmission lines, methods of manufacture and design structures 有权
标题翻译：片上可调输电线路，制造方法和设计结构
公开(公告)号：US08898605B2
公开(公告)日：2014-11-25
申请号：US12911327
申请日：2010-10-25
申请人： Hanyi Ding , Guoan Wang , Wayne H. Woods, Jr.
发明人： Hanyi Ding , Guoan Wang , Wayne H. Woods, Jr.
IPC分类号： G06F17/50 , H01P3/08 , H01P1/15
CPC分类号： H01P3/08 , H01P1/15 , Y10T29/49117
摘要： An on-chip tunable transmission line (t-line), methods of manufacture and design structures are provided. The structure includes a tunable transmission line (t-line) with fixed characteristic impedance comprising functionally-differentiated switches used for inductance and capacitance, respectively.
摘要翻译：提供片上可调输电线（t线），制造方法和设计结构。该结构包括具有固定特性阻抗的可调传输线（t线），分别包括用于电感和电容的功能差分开关。

5. 发明授权

US08120145B2 Structure for a through-silicon-via on-chip passive MMW bandpass filter 有权
标题翻译：用于硅通孔片上无源MMW带通滤波器的结构
公开(公告)号：US08120145B2
公开(公告)日：2012-02-21
申请号：US12140364
申请日：2008-06-17
申请人： Amit Bavisi , Hanyi Ding , Guoan Wang , Wayne H. Woods, Jr. , Jiansheng Xu
发明人： Amit Bavisi , Hanyi Ding , Guoan Wang , Wayne H. Woods, Jr. , Jiansheng Xu
IPC分类号： H01L27/06
CPC分类号： H01P1/20363
摘要： A design structure is embodied in a machine readable medium for designing, manufacturing, or testing a design. The design structure includes a substrate including a silicon layer. Furthermore, the design structure includes a metal layer on a bottom side of the silicon layer and a dielectric layer on a top side of the silicon layer. Additionally, the design structure includes a top-side interconnect of the through-silicon via bandpass filter on a surface of the dielectric layer and a plurality of contacts in the dielectric layer in contact with the top-side interconnect. Further, the design structure includes a plurality of through-silicon vias through the substrate and in contact with the plurality of contacts, respectively, and the metal layer.
摘要翻译：设计结构体现在用于设计，制造或测试设计的机器可读介质中。该设计结构包括具有硅层的基板。此外，设计结构包括在硅层的底侧上的金属层和在硅层的顶侧上的介电层。此外，该设计结构包括在电介质层的表面上的通过硅通孔带通滤波器的顶侧互连以及与顶侧互连件接触的介电层中的多个触点。此外，设计结构包括分别通过基板并与多个触点和金属层接触的多个穿硅通孔。

6. 发明授权

US08508314B2 On-chip variable delay transmission line with fixed characteristic impedance 有权
标题翻译：具有固定特性阻抗的片上可变延迟传输线
公开(公告)号：US08508314B2
公开(公告)日：2013-08-13
申请号：US13441245
申请日：2012-04-06
申请人： Hanyi Ding , Wayne H. Woods, Jr.
发明人： Hanyi Ding , Wayne H. Woods, Jr.
IPC分类号： H01P1/18
CPC分类号： H01P9/00 , H01P1/184
摘要： A design structure, structure, and method for providing an on-chip variable delay transmission line with a fixed characteristic impedance. A method of manufacturing a transmission line structure includes forming a signal line of the transmission line structure, forming a first ground return structure that causes a first delay and a first characteristic impedance in the transmission line structure, and forming a second ground return structure that causes a second delay and a second characteristic impedance in the transmission line structure. The first delay is different from the second delay, and the first characteristic impedance is substantially the same as the second characteristic impedance.
摘要翻译：一种用于提供具有固定特性阻抗的片上可变延迟传输线的设计结构，结构和方法。制造传输线结构的方法包括形成传输线结构的信号线，形成在传输线结构中引起第一延迟和第一特性阻抗的第一接地返回结构，以及形成第二接地返回结构，其导致传输线结构中的第二延迟和第二特性阻抗。第一延迟与第二延迟不同，第一特征阻抗基本上与第二特征阻抗相同。

7. 发明授权

US08476988B2 Structure, structure and method for providing an on-chip variable delay transmission line with fixed characteristic impedance 有权
标题翻译：提供具有固定特性阻抗的片上可变延迟传输线的结构，结构和方法
公开(公告)号：US08476988B2
公开(公告)日：2013-07-02
申请号：US13364569
申请日：2012-02-02
申请人： Hanyi Ding , Wayne H. Woods, Jr.
发明人： Hanyi Ding , Wayne H. Woods, Jr.
IPC分类号： H01P9/00
CPC分类号： H01P9/006 , H01L23/5222 , H01L23/5225 , H01L2924/0002 , H01L2924/3011 , Y10T29/41 , H01L2924/00
摘要： A design structure, structure, and method for providing an on-chip variable delay transmission line with a fixed characteristic impedance. A method of manufacturing a transmission line structure includes forming a signal line of the transmission line structure, forming a first ground return structure that causes a first delay and a first characteristic impedance in the transmission line structure, and forming a second ground return structure that causes a second delay and a second characteristic impedance in the transmission line structure. The first delay is different from the second delay, and the first characteristic impedance is substantially the same as the second characteristic impedance.
摘要翻译：一种用于提供具有固定特性阻抗的片上可变延迟传输线的设计结构，结构和方法。制造传输线结构的方法包括形成传输线结构的信号线，形成在传输线结构中引起第一延迟和第一特性阻抗的第一接地返回结构，以及形成第二接地返回结构，其导致传输线结构中的第二延迟和第二特性阻抗。第一延迟与第二延迟不同，第一特征阻抗基本上与第二特征阻抗相同。

8. 发明授权

US08378448B2 Chip inductor with frequency dependent inductance 有权
标题翻译：具有频率相关电感的片式电感
公开(公告)号：US08378448B2
公开(公告)日：2013-02-19
申请号：US12632030
申请日：2009-12-07
申请人： Hanyi Ding , Wayne H. Woods, Jr.
发明人： Hanyi Ding , Wayne H. Woods, Jr.
IPC分类号： H01L21/00
CPC分类号： H01L28/10 , G06F17/5068 , G06F17/5077 , H01L21/31053 , H01L21/76808 , H01L21/76826 , H01L23/5223 , H01L23/5227 , H01L27/08 , H01L29/432 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： A set of metal line structures including a signal transmission metal line and a capacitively-grounded inductively-signal-coupled metal line is embedded in a dielectric material layer. A capacitor is serially connected between the capacitively-grounded inductively-signal-coupled metal line and a local electrical ground, which may be on the input side or on the output side. The set of metal line structures and the capacitor collective provide a frequency dependent inductor. The Q factor of the frequency dependent inductor has multiple peaks that enable the operation of the frequency dependent inductor at multiple frequencies. Multiple capacitively-grounded inductively-signal-coupled metal lines may be provided in the frequency-dependent inductor, each of which is connected to the local electrical ground through a capacitor. By selecting different capacitance values for the capacitors, multiple values of the Q-factor may be obtained in the frequency dependent inductor at different signal frequencies.
摘要翻译：包括信号传输金属线和电容接地感应信号耦合金属线的一组金属线结构被嵌入在电介质材料层中。电容器串联连接在电容接地的感应信号耦合金属线路和可能在输入侧或输出侧的局部电接地之间。金属线结构和电容集合提供了一个频率相关的电感。频率依赖电感器的Q因子具有多个峰值，使得能够在多个频率下操作频率相关的电感器。可以在频率相关电感器中提供多个电容耦合的感应信号耦合金属线路，每个电路通过电容器连接到本地电接地。通过选择电容器的不同电容值，可以在不同信号频率的频率相关电感器中获得Q因子的多个值。

9. 发明授权

US08216912B2 Method, structure, and design structure for a through-silicon-via Wilkinson power divider 有权
标题翻译：通过硅片通过威尔金森功率分配器的方法，结构和设计结构
公开(公告)号：US08216912B2
公开(公告)日：2012-07-10
申请号：US12548033
申请日：2009-08-26
申请人： Hanyi Ding , Alvin J. Joseph , Wayne H. Woods, Jr.
发明人： Hanyi Ding , Alvin J. Joseph , Wayne H. Woods, Jr.
IPC分类号： H01L21/20 , H01L21/44
CPC分类号： G06F17/5077 , H01L23/481 , H01L2924/0002 , H01L2924/3011 , H01P5/16 , H01P11/007 , H01L2924/00
摘要： A method, structure, and design structure for a through-silicon-via Wilkinson power divider. A method includes: forming an input on a first side of a substrate; forming a first leg comprising a first through-silicon-via formed in the substrate, wherein the first leg electrically connects the input and a first output; forming a second leg comprising a second through-silicon-via formed in the substrate, wherein the second leg electrically connects the input and a second output, and forming a resistor electrically connected between the first output and the second output.
摘要翻译：一种通过硅通孔威尔金森功率分配器的方法，结构和设计结构。一种方法包括：在基板的第一侧上形成输入; 形成包括在所述基板中形成的第一穿通硅通孔的第一支脚，其中所述第一支路电连接所述输入端和第一输出端; 形成包括形成在所述基板中的第二通硅通孔的第二支脚，其中所述第二支脚电连接所述输入端和第二输出端，以及形成电连接在所述第一输出端和所述第二输出端之间的电阻器。

10. 发明申请

US20100237464A1 Chip Inductor With Frequency Dependent Inductance 有权
标题翻译：具有频率依赖电感的片式电感器
公开(公告)号：US20100237464A1
公开(公告)日：2010-09-23
申请号：US12632030
申请日：2009-12-07
申请人： Hanyi Ding , Wayne H. Woods, JR.
发明人： Hanyi Ding , Wayne H. Woods, JR.
IPC分类号： H01L27/06 , G06F17/50
CPC分类号： H01L28/10 , G06F17/5068 , G06F17/5077 , H01L21/31053 , H01L21/76808 , H01L21/76826 , H01L23/5223 , H01L23/5227 , H01L27/08 , H01L29/432 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： A set of metal line structures including a signal transmission metal line and a capacitively-grounded inductively-signal-coupled metal line is embedded in a dielectric material layer. A capacitor is serially connected between the capacitively-grounded inductively-signal-coupled metal line and a local electrical ground, which may be on the input side or on the output side. The set of metal line structures and the capacitor collective provide a frequency dependent inductor. The Q factor of the frequency dependent inductor has multiple peaks that enable the operation of the frequency dependent inductor at multiple frequencies. Multiple capacitively-grounded inductively-signal-coupled metal lines may be provided in the frequency-dependent inductor, each of which is connected to the local electrical ground through a capacitor. By selecting different capacitance values for the capacitors, multiple values of the Q-factor may be obtained in the frequency dependent inductor at different signal frequencies.
摘要翻译：包括信号传输金属线和电容接地感应信号耦合金属线的一组金属线结构被嵌入在电介质材料层中。电容器串联连接在电容接地的感应信号耦合金属线路和可能在输入侧或输出侧的局部电接地之间。金属线结构和电容集合提供了一个频率相关的电感。频率依赖电感器的Q因子具有多个峰值，使得能够在多个频率下操作频率相关的电感器。可以在频率相关电感器中提供多个电容耦合的感应信号耦合金属线路，每个电路通过电容器连接到本地电接地。通过选择电容器的不同电容值，可以在不同信号频率的频率相关电感器中获得Q因子的多个值。

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