专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08735245B2 Metal oxide resistive switching memory and method for manufacturing same 有权
标题翻译：金属氧化物电阻式开关存储器及其制造方法
公开(公告)号：US08735245B2
公开(公告)日：2014-05-27
申请号：US13510467
申请日：2011-06-30
申请人： Hangbing Lv , Ming Liu , Shibing Long , Qi Liu , Yanhua Wang , Jiebin Niu
发明人： Hangbing Lv , Ming Liu , Shibing Long , Qi Liu , Yanhua Wang , Jiebin Niu
IPC分类号： H01L21/8239 , G11C11/21
CPC分类号： H01L27/101 , H01L27/2436 , H01L45/04 , H01L45/1233 , H01L45/145 , H01L45/146 , H01L45/147 , H01L45/16
摘要： The present disclosure relates to the microelectronics field, and particularly, to a metal oxide resistive switching memory and a method for manufacturing the same. The method may comprise: forming a W-plug lower electrode above a MOS device; sequentially forming a cap layer, a first dielectric layer, and an etching block layer on the W-plug lower electrode; etching the etching block layer, the first dielectric layer, and the cap layer to form a groove for a first level of metal wiring; sequentially forming a metal oxide layer, an upper electrode layer, and a composite layer of a diffusion block layer/a seed copper layer/a plated copper layer in the groove for the first level of metal wiring; patterning the upper electrode layer and the composite layer by CMP, to form a memory cell and the first level of metal wiring in the groove in the first dielectric layer; and performing subsequent processes to complete the metal oxide resistive switching memory. According to the present disclosure, the manufacture process can be simplified, without incorporating additional exposure steps in the standard process, resulting in advantages such as reduced cost.
摘要翻译：本公开涉及微电子领域，特别涉及金属氧化物电阻式开关存储器及其制造方法。该方法可以包括：在MOS器件之上形成W形插塞下电极; 在W型插塞下电极上依次形成覆盖层，第一电介质层和蚀刻阻挡层; 蚀刻蚀刻阻挡层，第一介电层和盖层，以形成用于第一级金属布线的凹槽; 在用于第一级金属布线的槽中依次形成金属氧化物层，上电极层和扩散阻挡层/种子铜层/镀覆铜层的复合层; 通过CMP图案化上电极层和复合层，以在第一介电层中的沟槽中形成存储单元和第一级金属布线; 以及执行后续处理以完成金属氧化物电阻式切换存储器。根据本公开，可以简化制造过程，而不在标准方法中引入额外的暴露步骤，导致诸如降低成本的优点。

2. 发明申请

US20120305883A1 METAL OXIDE RESISTIVE SWITCHING MEMORY AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：金属氧化物电阻开关存储器及其制造方法
公开(公告)号：US20120305883A1
公开(公告)日：2012-12-06
申请号：US13510467
申请日：2011-06-30
申请人： Hangbing Lv , Ming Liu , Shibing Long , Qi Liu , Yanhua Wang , Jiebin Niu
发明人： Hangbing Lv , Ming Liu , Shibing Long , Qi Liu , Yanhua Wang , Jiebin Niu
IPC分类号： H01L47/00 , H01L45/00
CPC分类号： H01L27/101 , H01L27/2436 , H01L45/04 , H01L45/1233 , H01L45/145 , H01L45/146 , H01L45/147 , H01L45/16
摘要： The present disclosure relates to the microelectronics field, and particularly, to a metal oxide resistive switching memory and a method for manufacturing the same. The method may comprise: forming a W-plug lower electrode above a MOS device; sequentially forming a cap layer, a first dielectric layer, and an etching block layer on the W-plug lower electrode; etching the etching block layer, the first dielectric layer, and the cap layer to form a groove for a first level of metal wiring; sequentially forming a metal oxide layer, an upper electrode layer, and a composite layer of a diffusion block layer/a seed copper layer/a plated copper layer in the groove for the first level of metal wiring; patterning the upper electrode layer and the composite layer by CMP, to form a memory cell and the first level of metal wiring in the groove in the first dielectric layer; and performing subsequent processes to complete the metal oxide resistive switching memory. According to the present disclosure, the manufacture process can be simplified, without incorporating additional exposure steps in the standard process, resulting in advantages such as reduced cost.
摘要翻译：本公开涉及微电子领域，特别涉及金属氧化物电阻式开关存储器及其制造方法。该方法可以包括：在MOS器件之上形成W形插塞下电极; 在W型插塞下电极上依次形成覆盖层，第一电介质层和蚀刻阻挡层; 蚀刻蚀刻阻挡层，第一介电层和盖层，以形成用于第一级金属布线的凹槽; 在用于第一级金属布线的槽中依次形成金属氧化物层，上电极层和扩散阻挡层/种子铜层/镀覆铜层的复合层; 通过CMP图案化上电极层和复合层，以在第一介电层中的沟槽中形成存储单元和第一级金属布线; 以及执行后续处理以完成金属氧化物电阻式切换存储器。根据本公开，可以简化制造过程，而不在标准方法中引入额外的暴露步骤，导致诸如降低成本的优点。

3. 发明申请

US20150104094A1 DEFECT DETECTION SYSTEM FOR EXTREME ULTRAVIOLET LITHOGRAPHY MASK 有权
标题翻译：超极紫外线掩模缺陷检测系统
公开(公告)号：US20150104094A1
公开(公告)日：2015-04-16
申请号：US14391682
申请日：2012-04-16
申请人： Hailiang Li , Changqing Xie , Ming Liu , Dongmei Li , Jiebin Niu , Lina Shi , Xiaoli Zhu
发明人： Hailiang Li , Changqing Xie , Ming Liu , Dongmei Li , Jiebin Niu , Lina Shi , Xiaoli Zhu
IPC分类号： G01N21/88 , G01N21/47 , G06T7/00 , G01N21/95
CPC分类号： G01N21/8851 , G01N21/47 , G01N21/8806 , G01N21/95 , G01N2021/8822 , G01N2021/95676 , G01N2201/12 , G02B21/16 , G02B27/4222 , G02B2207/125 , G03F1/84 , G06T7/0004
摘要： A defect detection system for an extreme ultraviolet lithography mask comprises an extreme ultraviolet light source (1), extreme ultraviolet light transmission parts (2, 3), an extreme ultraviolet lithography mask (4), a photon sieve (6) and a collection (7) and analysis (8) system. Point light source beams emitted by the extreme ultraviolet light source (1) are focused on the extreme ultraviolet lithography mask (4) through the extreme ultraviolet light transmission parts (2, 3); the extreme ultraviolet lithography mask (4) emits scattered light and illuminates the photon sieve (6); and the photon sieve (6) forms a dark field image and transmits the same to the collection (7) and analysis (8) system. The defect detection system for the extreme ultraviolet photolithographic mask uses the photon sieve to replace a Schwarzchild objective, thereby realizing lower cost, relatively small size and high resolution.
摘要翻译：用于极紫外光刻掩模的缺陷检测系统包括极紫外光源（1），极紫外光透射部分（2,3），极紫外光刻掩模（4），光子筛（6）和集合 7）和分析（8）系统。由极紫外光源（1）发射的点光源光束通过极紫外光透射部分（2,3）聚焦在极紫外光刻掩模（4）上; 极紫外光刻掩模（4）发射散射光并照射光子筛（6）; 并且光子筛（6）形成暗场图像并将其传输到集合（7）和分析（8）系统。用于极紫外光刻掩模的缺陷检测系统使用光子筛替代施瓦茨目标，从而实现更低的成本，更小的尺寸和更高的分辨率。

4. 发明授权

US09546964B2 Defect detection system for extreme ultraviolet lithography mask 有权
标题翻译：用于极紫外光刻掩模的缺陷检测系统
公开(公告)号：US09546964B2
公开(公告)日：2017-01-17
申请号：US14391682
申请日：2012-04-16
申请人： Hailiang Li , Changqing Xie , Ming Liu , Dongmei Li , Jiebin Niu , Lina Shi , Xiaoli Zhu
发明人： Hailiang Li , Changqing Xie , Ming Liu , Dongmei Li , Jiebin Niu , Lina Shi , Xiaoli Zhu
IPC分类号： G06K9/00 , G01N21/88 , G03F1/84 , G02B21/16 , G02B27/42 , G01N21/47 , G01N21/95 , G06T7/00 , G01N21/956
CPC分类号： G01N21/8851 , G01N21/47 , G01N21/8806 , G01N21/95 , G01N2021/8822 , G01N2021/95676 , G01N2201/12 , G02B21/16 , G02B27/4222 , G02B2207/125 , G03F1/84 , G06T7/0004
摘要： A defect detection system for an extreme ultraviolet lithography mask comprises an extreme ultraviolet light source (1), extreme ultraviolet light transmission parts (2, 3), an extreme ultraviolet lithography mask (4), a photon sieve (6) and a collection (7) and analysis (8) system. Point light source beams emitted by the extreme ultraviolet light source (1) are focused on the extreme ultraviolet lithography mask (4) through the extreme ultraviolet light transmission parts (2, 3); the extreme ultraviolet lithography mask (4) emits scattered light and illuminates the photon sieve (6); and the photon sieve (6) forms a dark field image and transmits the same to the collection (7) and analysis (8) system. The defect detection system for the extreme ultraviolet photolithographic mask uses the photon sieve to replace a Schwarzchild objective, thereby realizing lower cost, relatively small size and high resolution.
摘要翻译：用于极紫外光刻掩模的缺陷检测系统包括极紫外光源（1），极紫外光透射部分（2,3），极紫外光刻掩模（4），光子筛（6）和集合 7）和分析（8）系统。由极紫外光源（1）发射的点光源光束通过极紫外光透射部分（2,3）聚焦在极紫外光刻掩模（4）上; 极紫外光刻掩模（4）发射散射光并照射光子筛（6）; 并且光子筛（6）形成暗场图像并将其传输到集合（7）和分析（8）系统。用于极紫外光刻掩模的缺陷检测系统使用光子筛替代施瓦茨目标，从而实现更低的成本，更小的尺寸和更高的分辨率。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式