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1. 发明授权

US10775651B2 Double-layer graphene optical modulators and methods of fabrication thereof 有权
公开(公告)号：US10775651B2
公开(公告)日：2020-09-15
申请号：US16104532
申请日：2018-08-17
申请人： Hamed Dalir , Yang Xia , Yuan Wang , Xiang Zhang
发明人： Hamed Dalir , Yang Xia , Yuan Wang , Xiang Zhang
IPC分类号： G02F1/035 , G02F1/025 , G02F1/015
摘要： This disclosure provides systems, methods, and apparatus related to optical modulators. In one aspect, a device includes a substrate, a first electrically insulating material disposed over the substrate, a first graphene layer and a second graphene layer disposed in the first electrically insulating material and being separated by the first electrically insulating material, and a waveguide disposed on the first electrically insulating material. At least a portion of the second graphene layer overlays at least a portion of the first graphene layer. The waveguide overlays both the first graphene layer and the second graphene layer.

2. 发明申请

US20190155068A1 DOUBLE-LAYER GRAPHENE OPTICAL MODULATORS AND METHODS OF FABRICATION THEREOF 审中-公开
公开(公告)号：US20190155068A1
公开(公告)日：2019-05-23
申请号：US16104532
申请日：2018-08-17
申请人： Hamed Dalir , Yang Xia , Yuan Wang , Xiang Zhang
发明人： Hamed Dalir , Yang Xia , Yuan Wang , Xiang Zhang
IPC分类号： G02F1/035 , G02F1/025
CPC分类号： G02F1/035 , G02F1/025 , G02F2001/0157 , G02F2202/10
摘要： This disclosure provides systems, methods, and apparatus related to optical modulators. In one aspect, a device includes a substrate, a first electrically insulating material disposed over the substrate, a first graphene layer and a second graphene layer disposed in the first electrically insulating material and being separated by the first electrically insulating material, and a waveguide disposed on the first electrically insulating material. At least a portion of the second graphene layer overlays at least a portion of the first graphene layer. The waveguide overlays both the first graphene layer and the second graphene layer.

3. 发明授权

US08752112B2 Live streaming video processing 有权
标题翻译：实时流视频处理
公开(公告)号：US08752112B2
公开(公告)日：2014-06-10
申请号：US13445620
申请日：2012-04-12
申请人： Charles Christian Krasic , Vijnan Shastri , Krishna Kumar Gadepalli , Yang Xia , Krishnan Eswaran , Wendy Tobagus
发明人： Charles Christian Krasic , Vijnan Shastri , Krishna Kumar Gadepalli , Yang Xia , Krishnan Eswaran , Wendy Tobagus
IPC分类号： H04N21/234
CPC分类号： H04N21/2187 , H04N21/234309 , H04N21/8456
摘要： Systems and methods for processing a live video stream are provided. An ingestion component receives segments of a live video stream in association with a request to process the live video stream. A control component generates an instruction graph for the live video stream based on predetermined criteria. The instruction graph defines a workflow for processing the live video stream, the workflow comprising a set of services for processing the segments. A transcoding component employs a subset of the services to process the segments based at least in part on the instruction graph and a distribution component then streams the segments to a device in response finishing process of the segments. With the live video processing system, segments of a video stream are processed and distributed as they are received. Thus segments of the video stream are processed and distributed prior to processing of the entire video stream.
摘要翻译：提供了用于处理直播视频流的系统和方法。摄取组件与处理直播视频流的请求相关联地接收实况视频流的片段。控制部件基于预定标准生成实时视频流的指令图。指令图定义了用于处理直播视频流的工作流程，该工作流包括用于处理段的一组服务。代码转换组件使用服务的子集来至少部分地基于指令图来处理段，然后分布组件在段的响应整理过程中将段流传送到设备。使用实时视频处理系统，视频流的片段在被接收时被处理和分发。因此，视频流的段在处理整个视频流之前被处理和分配。

4. 发明申请

US20130276048A1 LIVE STREAMING VIDEO PROCESSING 有权
标题翻译：现场流媒体视频处理
公开(公告)号：US20130276048A1
公开(公告)日：2013-10-17
申请号：US13445620
申请日：2012-04-12
申请人： Charles Christian Krasic , Vijnan Shastri , Krishna Kumar Gadepalli , Yang Xia , Krishnan Eswaran , Wendy Tobagus
发明人： Charles Christian Krasic , Vijnan Shastri , Krishna Kumar Gadepalli , Yang Xia , Krishnan Eswaran , Wendy Tobagus
IPC分类号： H04N21/63
CPC分类号： H04N21/2187 , H04N21/234309 , H04N21/8456
摘要： Systems and methods for processing a live video stream are provided. An ingestion component receives segments of a live video stream in association with a request to process the live video stream. A control component generates an instruction graph for the live video stream based on predetermined criteria. The instruction graph defines a workflow for processing the live video stream, the workflow comprising a set of services for processing the segments. A transcoding component employs a subset of the services to process the segments based at least in part on the instruction graph and a distribution component then streams the segments to a device in response finishing process of the segments. With the live video processing system, segments of a video stream are processed and distributed as they are received. Thus segments of the video stream are processed and distributed prior to processing of the entire video stream.
摘要翻译：提供了用于处理直播视频流的系统和方法。摄取组件与处理直播视频流的请求相关联地接收实况视频流的片段。控制部件基于预定标准生成实时视频流的指令图。指令图定义了用于处理直播视频流的工作流程，该工作流包括用于处理段的一组服务。代码转换组件使用服务的子集来至少部分地基于指令图来处理段，然后分布组件在段的响应整理过程中将段流传送到设备。使用实时视频处理系统，视频流的片段在被接收时被处理和分发。因此，视频流的段在处理整个视频流之前被处理和分配。

5. 发明授权

US08871618B2 In-situ fabrication method for silicon solar cell 有权
标题翻译：硅太阳能电池的原位制造方法
公开(公告)号：US08871618B2
公开(公告)日：2014-10-28
申请号：US13699739
申请日：2010-09-08
申请人： Yang Xia , Bangwu Liu , Chaobo Li , Jie Liu , Minggang Wang , Yongtao Li
发明人： Yang Xia , Bangwu Liu , Chaobo Li , Jie Liu , Minggang Wang , Yongtao Li
IPC分类号： H01L21/26 , H01L31/18 , C23C14/48 , H01L21/223
CPC分类号： H01L31/18 , C23C14/48 , H01L21/2236 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： An in-situ fabrication method for a silicon solar cell includes the following steps: pretreating a silicon chip; placing the pretreated silicon chip in an implantation chamber of a plasma immersion ion implantation machine; completing the preparation of black silicon via a plasma immersion ion implantation process; making a PN junction and forming a passivation layer on the black silicon; after making the PN junction and forming the passivation layer, removing the black silicon from the plasma immersion ion implantation machine; preparing a metal back electrode on the back of the black silicon; preparing a metal grid on the passivation layer; obtaining a solar cell after encapsulation. Said method enables black silicon preparation, PN junction preparation, and passivation layer formation in-situ, greatly reducing the amount of equipment needed for the preparation of solar cells and the preparation cost. In addition, the method is simple and easy to control.
摘要翻译：硅太阳能电池的原位制造方法包括以下步骤：预处理硅芯片; 将预处理的硅芯片放置在等离子体浸入式离子注入机的注入室中; 通过等离子体浸没离子注入工艺完成黑硅的制备; 制造PN结并在黑色硅上形成钝化层; 在形成PN结并形成钝化层之后，从等离子体浸入离子注入机中除去黑色硅; 在黑色硅的背面制备金属背电极; 在钝化层上制备金属网格; 封装后获得太阳能电池。所述方法使黑硅制备，PN结制备和钝化层原位形成，大大减少了制备太阳能电池所需的设备量和制备成本。另外，该方法简单易控。

6. 发明申请

US20130071965A1 In-Situ Fabrication Method for Silicon Solar Cell 有权
标题翻译：硅太阳能电池的原位制造方法
公开(公告)号：US20130071965A1
公开(公告)日：2013-03-21
申请号：US13699739
申请日：2010-09-08
申请人： Yang Xia , Bangwu Liu , Chaobo Li , Jie Liu , Minggang Wang , Yongtao Li
发明人： Yang Xia , Bangwu Liu , Chaobo Li , Jie Liu , Minggang Wang , Yongtao Li
IPC分类号： H01L31/18
CPC分类号： H01L31/18 , C23C14/48 , H01L21/2236 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： An in-situ fabrication method for a silicon solar cell includes the following steps: pretreating a silicon chip; placing the pretreated silicon chip in an implantation chamber of a plasma immersion ion implantation machine; completing the preparation of black silicon via a plasma immersion ion implantation process; making a PN junction and forming a passivation layer on the black silicon; after making the PN junction and forming the passivation layer, removing the black silicon from the plasma immersion ion implantation machine; preparing a metal back electrode on the back of the black silicon; preparing a metal grid on the passivation layer; obtaining a solar cell after encapsulation. Said method enables black silicon preparation, PN junction preparation, and passivation layer formation in-situ, greatly reducing the amount of equipment needed for the preparation of solar cells and the preparation cost. In addition, the method is simple and easy to control.
摘要翻译：硅太阳能电池的原位制造方法包括以下步骤：预处理硅芯片; 将预处理的硅芯片放置在等离子体浸入式离子注入机的注入室中; 通过等离子体浸没离子注入工艺完成黑硅的制备; 制造PN结并在黑色硅上形成钝化层; 在形成PN结并形成钝化层之后，从等离子体浸入离子注入机中除去黑色硅; 在黑色硅的背面制备金属背电极; 在钝化层上制备金属网格; 封装后获得太阳能电池。所述方法使黑硅制备，PN结制备和钝化层原位形成，大大减少了制备太阳能电池所需的设备量和制备成本。另外，该方法简单易控。

7. 发明申请

US20140354991A1 NORMAL-INCIDENCE BROADBAND SPECTROSCOPIC POLARIMETER CONTAINING REFERENCE BEAM AND OPTICAL MEASUREMENT SYSTEM 有权
标题翻译：包含参考光束和光学测量系统的正常入射宽带光谱极化器
公开(公告)号：US20140354991A1
公开(公告)日：2014-12-04
申请号：US14366637
申请日：2012-09-06
申请人： Guoguang Li , Tao Liu , Jiangyan Zhao , Qingyang Guo , Edgar Genio , Tiezhong Ma , Yang Xia
发明人： Guoguang Li , Tao Liu , Jiangyan Zhao , Qingyang Guo , Edgar Genio , Tiezhong Ma , Yang Xia
IPC分类号： G01J3/447 , G01B11/02
CPC分类号： G01J3/447 , G01B11/02 , G01B2210/56 , G01J3/0208 , G01J3/0224 , G01J3/42 , G01N21/21 , G01N2021/213 , G02B27/14 , G02B27/40
摘要： Disclosed is a normal-incidence broadband spectroscopic polarimeter containing reference beam, comprising a light source, a first reflecting unit, a first concentrating unit, a second concentrating unit, a polarizer, a first curved mirror, a first planar mirror, a second reflecting unit and a probing unit. Also disclosed is an optical measurement system, comprising the normal-incidence broadband spectroscopic polarimeter containing reference beam. The normal-incidence broadband spectroscopic polarimeter containing reference beam achieves an integral combination of the light beams after splitting, can maintain the polarization state of the light beams while increasing the light transmission efficiency, and has a low complexity.
摘要翻译：公开了一种包含参考光束的正常入射宽带分光偏振计，包括光源，第一反射单元，第一浓缩单元，第二浓缩单元，偏振器，第一曲面镜，第一平面镜，第二反射单元和探测单元。还公开了一种光学测量系统，其包括含有参考光束的正常入射宽带光谱偏振计。含有参考光束的正常入射宽带光谱旋光仪实现了分光后的光束的整体组合，可以在提高光传输效率的同时保持光束的偏振态，并且具有较低的复杂度。

8. 发明授权

US06816827B1 Verification method for combinational loop systems 失效
标题翻译：组合回路系统的验证方法
公开(公告)号：US06816827B1
公开(公告)日：2004-11-09
申请号：US09410087
申请日：1999-10-01
申请人： Yang Xia , Pranav N. Ashar
发明人： Yang Xia , Pranav N. Ashar
IPC分类号： G06F1750
CPC分类号： G06F17/504
摘要： A design verification method for verifying hardware designs utilizing combinational loop logic. A design verification system is provided wherein a model checker receives both a mathematical representation of the functionality of a design and a set of properties against which the mathematical model is to be checked. If the design contains a combinational loop wherein the output directly depends on its own output and must be logically completed within a single bus cycle, then modifications to the model are undertaken. A minimal number of flip-flops are first added to the combinational loop in order to break up the combinational dependency. All of the states of a state machine model of the design are then supplemented with a twin state which is exactly the same as the original state. If the current state is an original state then the next cycle progresses the state machine to twin state of the particular original state. If the current state is a twin state, then the state machine progresses to the next new original state. Thus, by modifying the model in a generic straightforward manner, the design containing a combinational loop can be verified with currently available verification systems without requiring any modifications to the model checker itself.

9. 发明申请

US20150165420A1 PHOTOCATALYTIC COMPOSITIONS AND METHODS FOR THEIR PREPARATION AND USE 有权
标题翻译：光化学组合物及其制备和使用方法
公开(公告)号：US20150165420A1
公开(公告)日：2015-06-18
申请号：US14407757
申请日：2012-06-12
申请人： Chongjun Zhao , Zhen Shao , Yang Xia , Yunlong Xu , Xiuzhen Qian
发明人： Chongjun Zhao , Zhen Shao , Yang Xia , Yunlong Xu , Xiuzhen Qian
IPC分类号： B01J27/10 , B01J35/00 , B01J19/12 , B01J23/10 , C02F1/72 , C02F1/32
CPC分类号： B01J27/10 , B01D53/8687 , B01D2255/104 , B01D2255/206 , B01D2255/802 , B01D2257/91 , B01J19/123 , B01J19/127 , B01J23/10 , B01J27/08 , B01J27/125 , B01J35/004 , B01J37/031 , B01J37/04 , B01J2219/0877 , B01J2219/1203 , C01B3/042 , C01B13/0207 , C02F1/004 , C02F1/281 , C02F1/288 , C02F1/30 , C02F1/32 , C02F1/325 , C02F1/385 , C02F1/725 , C02F2101/30 , C02F2101/308 , C02F2201/006 , C02F2303/04 , C02F2303/185 , C02F2305/10 , Y02A20/156 , Y02E60/364
摘要： A photocatalytic composition is disclosed that includes a silver halide in combination with one or more rare earth elements. The composition may be used for the photocatalytic degradation of pollutants.
摘要翻译：公开了一种光催化组合物，其包括与一种或多种稀土元素组合的卤化银。该组合物可用于污染物的光催化降解。

10. 发明授权

US08703591B2 Method for fabricating black silicon by using plasma immersion ion implantation 有权
标题翻译：通过等离子体浸没离子注入制造黑色硅的方法
公开(公告)号：US08703591B2
公开(公告)日：2014-04-22
申请号：US13699741
申请日：2010-07-26
申请人： Yang Xia , Bangwu Liu , Chaobo Li , Jie Liu , Minggang Wang , Yongtao Li
发明人： Yang Xia , Bangwu Liu , Chaobo Li , Jie Liu , Minggang Wang , Yongtao Li
IPC分类号： H01L21/26
CPC分类号： H01L21/26506 , C30B29/06 , C30B31/22 , H01L21/2236 , H01L31/02363 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A method for fabricating black silicon by using plasma immersion ion implantation is provided, which includes: putting a silicon wafer into a chamber of a black silicon fabrication apparatus; adjusting processing parameters of the black silicon fabrication apparatus to preset scales; generating plasmas in the chamber of the black silicon fabrication apparatus; implanting reactive ions among the plasmas into the silicon wafer, and forming the black silicon by means of the reaction of the reactive ions and the silicon wafer. The method can form the black silicon which has a strong light absorption property and is sensitive to light, and has advantages of high productivity, low cost and simple production process.
摘要翻译：提供了一种通过使用等离子体浸没离子注入来制造黑色硅的方法，其包括：将硅晶片放入黑色硅制造装置的腔室中; 调整黑硅制造装置的预设刻度的处理参数; 在黑硅制造装置的室中产生等离子体; 将等离子体中的反应离子注入到硅晶片中，并且通过反应离子和硅晶片的反应形成黑色硅。该方法可以形成具有强光吸收性并对光敏感的黑色硅，具有生产率高，成本低，生产工艺简单的优点。

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