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1. 发明授权

US09305969B2 Solid-state imaging device operable with two readout modes in two different directions coincident with a moving speed and a moving direction of a moving subject 有权
标题翻译：在两个不同方向可操作两种读出模式的固态成像装置与移动的被摄体的移动速度和移动方向一致
公开(公告)号：US09305969B2
公开(公告)日：2016-04-05
申请号：US13666098
申请日：2012-11-01
申请人： HAMAMATSU PHOTONICS K.K.
发明人： Motohiro Suyama , Akiomi Ujima , Kentaro Maeta , Hisanori Suzuki , Masaharu Muramatsu , Fumio Iwase
IPC分类号： G06M7/00 , H01L27/00 , H01L27/148 , H04N5/3722 , H04N3/14
CPC分类号： H01L27/14843 , H04N3/1525 , H04N3/1537 , H04N5/3722
摘要： A solid-state imaging device 1A includes a CCD-type solid-state imaging element 10 having an imaging plane 12 formed of M×N pixels that are two-dimensionally arrayed in M rows and N columns, N signal readout circuits 20 arranged on one end side in the column direction for each of the columns with respect to the imaging plane 12, and N signal readout circuits 30 arranged on the other end side in the column direction for each of the columns with respect to the imaging plane 12, a semiconductor element 50 for digital-converting and then sequentially outputting as serial signals electrical signals output from the signal readout circuits 20 for each of the columns, and a semiconductor element 60 for digital-converting and then sequentially outputting as serial signals electrical signals output from the signal readout circuits 30 for each of the columns.
摘要翻译：固态成像装置1A包括CCD型固体摄像元件10，其具有由M×N个像素形成的成像面12，二维排列成M行N列，N个信号读出电路20配置在一个相对于成像面12的各列的列方向的端侧，以及相对于摄像面12对于列的列方向配置在另一端侧的N个信号读出电路30，半导体元件50，用于数字转换，然后顺序地输出作为串行信号从每个列的信号读出电路20输出的电信号;以及半导体元件60，用于数字转换，然后顺序地输出作为串行信号从信号输出的电信号每列的读出电路30。

2. 发明授权

US10811459B2 Backside incidence type solid-state image pickup device 有权
公开(公告)号：US10811459B2
公开(公告)日：2020-10-20
申请号：US15505993
申请日：2015-08-04
申请人： HAMAMATSU PHOTONICS K.K.
发明人： Shin-ichiro Takagi , Kentaro Maeta , Yasuhito Yoneta , Hisanori Suzuki , Masaharu Muramatsu
IPC分类号： H01L27/148 , H04N5/369 , H01L27/14 , H04N5/372 , H01L27/146
摘要： A back-illuminated solid-state imaging device includes a semiconductor substrate, a shift register, and a light-shielding film. The semiconductor substrate includes a light incident surface on the back side and a light receiving portion generating a charge in accordance with light incidence. The shift register is disposed on the side of a light-detective surface opposite to the light incident surface of the semiconductor substrate. The light-shielding film is disposed on the side of the light-detective surface of the semiconductor substrate. The light-shielding film includes an uneven surface opposing the light-detective surface.

3. 发明申请

US20200043974A1 SEMICONDUCTOR LIGHT DETECTION ELEMENT 审中-公开
公开(公告)号：US20200043974A1
公开(公告)日：2020-02-06
申请号：US16597124
申请日：2019-10-09
申请人： HAMAMATSU PHOTONICS K.K.
发明人： Tatsuki Kasuya , Takeshi Kawahara , Yasuhito Miyazaki , Kentaro Maeta , Hisanori Suzuki
IPC分类号： H01L27/148 , H01L31/0236 , H01L31/103 , H01L31/0224
摘要： A semiconductor photodetector includes a semiconductor substrate including a silicon substrate. The semiconductor substrate includes a second main surface as a light incident surface and a first main surface opposing the second main surface. In the semiconductor substrate, carriers are generated in response to incident light. A plurality of protrusions is formed on the second main surface. The protrusion includes a slope inclined with respect to a thickness direction of the semiconductor substrate. At the protrusion, a (111) surface of the semiconductor substrate is exposed as the slope. The height of the protrusion is equal to or more than 200 nm.

4. 发明授权

US10573769B2 Backside-illuminated energy ray detection element 有权
公开(公告)号：US10573769B2
公开(公告)日：2020-02-25
申请号：US14766778
申请日：2014-01-24
申请人： HAMAMATSU PHOTONICS K.K.
发明人： Yasuhito Miyazaki , Kentaro Maeta , Masaharu Muramatsu
IPC分类号： H01L31/10 , H01L31/0352
摘要： A back-illuminated energy ray detecting element 1 includes a semiconductor substrate and a protective film. The semiconductor substrate has a first principal surface as an energy ray incident surface and a second principal surface opposite to the first principal surface, and a charge generating region configured to generate an electric charge according to incidence of an energy ray is disposed on the second principal surface side. The protective film is disposed on the second principal surface side of the semiconductor substrate to cover at least the charge generating region, and includes silicon nitride or silicon nitride oxide. The protective film has a stress alleviating section configured to alleviate stress generated in the protective film.

5. 发明授权

US10529772B2 Semiconductor light detection element 有权
公开(公告)号：US10529772B2
公开(公告)日：2020-01-07
申请号：US16081208
申请日：2017-03-01
申请人： HAMAMATSU PHOTONICS K.K.
发明人： Tatsuki Kasuya , Takeshi Kawahara , Yasuhito Miyazaki , Kentaro Maeta , Hisanori Suzuki
IPC分类号： H01L31/0236 , H01L27/148 , H01L31/0224
摘要： A semiconductor photodetector includes a semiconductor substrate including a silicon substrate. The semiconductor substrate includes a second main surface as a light incident surface and a first main surface opposing the second main surface. In the semiconductor substrate, carriers are generated in response to incident light. A plurality of protrusions is formed on the second main surface. The protrusion includes a slope inclined with respect to a thickness direction of the semiconductor substrate. At the protrusion, a (111) surface of the semiconductor substrate is exposed as the slope. The height of the protrusion is equal to or more than 200 nm.

6. 发明授权

US10199418B2 Semiconductor photodetection device 有权
公开(公告)号：US10199418B2
公开(公告)日：2019-02-05
申请号：US14766336
申请日：2013-10-17
申请人： HAMAMATSU PHOTONICS K.K.
发明人： Kenichi Sugimoto , Hiroya Kobayashi , Kentaro Maeta , Masaharu Muramatsu
IPC分类号： H01L27/146 , H01L23/00 , H01L23/498
摘要： A plurality of semiconductor photodetecting elements have a planar shape having a pair of first sides opposed to each other in a first direction and a pair of second sides being shorter than the pair of first sides and opposed to each other in a second direction perpendicular to the first direction, and are disposed on a base so as to be adjacent to each other in juxtaposition. A plurality of bump electrodes each are disposed on sides where the pair of first sides lie in each semiconductor photodetecting element, to electrically and mechanically connect the base to each semiconductor photodetecting element. A plurality of dummy bumps are disposed so that at least one dummy bump is disposed on each of sides where the pair of second sides lie in each semiconductor photodetecting element, to mechanically connect the base to each semiconductor photodetecting element.

7. 发明授权

US09054000B2 Solid-state imaging device 有权
标题翻译：固态成像装置
公开(公告)号：US09054000B2
公开(公告)日：2015-06-09
申请号：US13666149
申请日：2012-11-01
申请人： HAMAMATSU PHOTONICS K.K.
发明人： Motohiro Suyama , Akiomi Ujima , Kentaro Maeta , Hisanori Suzuki , Masaharu Muramatsu , Fumio Iwase
IPC分类号： H04N5/225 , H01L27/146
CPC分类号： H01L27/14618 , H01L2224/16 , H01L2224/48091 , H04N5/2253 , H01L2924/00014
摘要： A solid-state imaging device 2A includes a CCD-type solid-state imaging element 10 having an imaging plane 12 formed of M×N pixels that are two-dimensionally arrayed in M rows and N columns and N signal readout circuits 20 arranged on one end side in the column direction for each of the columns with respect to the plane 12 and for outputting electrical signals according to the magnitudes of charges taken out of the respective columns, respectively, a C-MOS-type semiconductor element 50 for digital-converting and sequentially outputting as serial signals electrical signals output from the circuits 20 for each of the columns, a heat transfer member 80 having a main surface 81a and a back surface 81b, and a cooling block 84 provided on the surface 81b, and the semiconductor element 50 and the surface 81a of the heat transfer member 80 are bonded to each other.
摘要翻译：固态成像装置2A包括CCD型固体摄像元件10，该CCD型固体摄像元件10具有由M×N像素构成的摄像面12，二维排列成M行N列，N信号读出电路20配置在一方用于每个列相对于平面12的列方向的端侧，并分别根据从各列取出的电荷的大小输出电信号，用于数字转换的C-MOS型半导体元件并顺序地输出作为串行信号从每个列的电路20输出的电信号，具有主表面81a和后表面81b的传热构件80和设置在表面81b上的冷却块84，以及半导体元件 50和传热构件80的表面81a彼此接合。

8. 发明授权

US10930700B2 Semiconductor light detection element 有权
公开(公告)号：US10930700B2
公开(公告)日：2021-02-23
申请号：US16597124
申请日：2019-10-09
申请人： HAMAMATSU PHOTONICS K.K.
发明人： Tatsuki Kasuya , Takeshi Kawahara , Yasuhito Miyazaki , Kentaro Maeta , Hisanori Suzuki
IPC分类号： H01L31/0236 , H01L27/148 , H01L31/103 , H01L31/0224
摘要： A semiconductor photodetector includes a semiconductor substrate including a silicon substrate. The semiconductor substrate includes a second main surface as a light incident surface and a first main surface opposing the second main surface. In the semiconductor substrate, carriers are generated in response to incident light. A plurality of protrusions is formed on the second main surface. The protrusion includes a slope inclined with respect to a thickness direction of the semiconductor substrate. At the protrusion, a (111) surface of the semiconductor substrate is exposed as the slope. The height of the protrusion is equal to or more than 200 nm.

9. 发明授权

US10483302B2 Solid-state imaging device 有权
公开(公告)号：US10483302B2
公开(公告)日：2019-11-19
申请号：US15502003
申请日：2015-08-03
申请人： HAMAMATSU PHOTONICS K.K.
发明人： Shin-ichiro Takagi , Kentaro Maeta , Yasuhito Yoneta , Hisanori Suzuki , Masaharu Muramatsu
IPC分类号： H01L27/146 , H01L31/02 , H01L27/148 , H04N5/372
摘要： A solid-state imaging device includes a plurality of photoelectric converting units and a plurality of charge-accumulating units each accumulating a charge generated in the corresponding photoelectric converting unit. The photoelectric converting unit includes a photosensitive region that generates the charge in accordance with light incidence, and an electric potential gradient forming unit that accelerates migration of charge in a second direction in the photosensitive region. The charge-accumulating unit includes: a plurality of regions (semiconductor layers) having an impurity concentration gradually changed in one way in the second direction, and electrodes adapted to apply electric fields to the plurality of regions. Each of the electrodes is disposed over the plurality of regions having the impurity concentration gradually varied.

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