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1. 发明授权

US07465406B2 Method of exposing a substrate to a surface microwave plasma, etching method, deposition method, surface microwave plasma generating apparatus, semiconductor substrate etching apparatus, semiconductor substrate deposition apparatus, and microwave plasma generating antenna assembly 有权
标题翻译：将基板曝光于表面微波等离子体的方法，蚀刻方法，沉积方法，表面微波等离子体生成装置，半导体基板蚀刻装置，半导体基板沉积装置和微波等离子体产生天线组件
公开(公告)号：US07465406B2
公开(公告)日：2008-12-16
申请号：US11448996
申请日：2006-06-07
申请人： Guy T. Blalock , Trung Tri Doan
发明人： Guy T. Blalock , Trung Tri Doan
IPC分类号： H01L21/302
CPC分类号： H01J37/3222 , H01J37/32192 , H01Q1/366
摘要： In certain implementations, methods and apparatus include an antenna assembly having at least two overlapping and movable surface microwave plasma antennas. The antennas have respective pluralities of microwave transmissive openings formed therethrough. At least some of the openings of the respective antennas overlap with at least some of the openings of another antenna, and form an effective plurality of microwave transmissive openings through the antenna assembly. Microwave energy is passed through the effective plurality of openings of the antenna assembly and to a flowing gas effective to form a surface microwave plasma onto a substrate received within the processing chamber. At least one of the antennas is moved relative to another of the antennas to change at least one of size and shape of the effective plurality of openings through the antenna assembly effective to modify microwave energy passed through the antenna assembly to the substrate.
摘要翻译：在某些实施方案中，方法和装置包括具有至少两个重叠和可移动的表面微波等离子体天线的天线组件。天线具有通过其形成的相应的多个微波透射开口。各个天线的至少一些开口与另一个天线的至少一些开口重叠，并且通过天线组件形成有效的多个微波透射开口。微波能量通过天线组件的有效多个开口并流过有效地将表面微波等离子体形成在接收在处理室内的衬底上的流动气体。天线中的至少一个相对于另一个天线移动，以通过天线组件改变有效多个开口的尺寸和形状中的至少一个，其有效地将通过天线组件的微波能量修改到衬底。

2. 发明授权

US07402518B2 Atomic layer deposition methods 有权
标题翻译：原子层沉积法
公开(公告)号：US07402518B2
公开(公告)日：2008-07-22
申请号：US11241486
申请日：2005-09-29
申请人： Trung Tri Doan , Guy T. Blalock , Gurtej S. Sandhu
发明人： Trung Tri Doan , Guy T. Blalock , Gurtej S. Sandhu
IPC分类号： H01L21/44
CPC分类号： H01L21/0228 , C23C16/38 , C23C16/403 , C23C16/45542 , C23C16/515 , H01L21/02178 , H01L21/02183 , H01L21/02186 , H01L21/02205 , H01L21/02274 , H01L21/28562 , H01L21/3141 , H01L21/31616 , H01L21/31683 , H01L21/76841
摘要： A first precursor gas is flowed to the substrate within the chamber effective to form a first monolayer on the substrate. A second precursor gas different in composition from the first precursor gas is flowed to the first monolayer within the chamber under surface microwave plasma conditions within the chamber effective to react with the first monolayer and form a second monolayer on the substrate which is different in composition from the first monolayer. The second monolayer includes components of the first monolayer and the second precursor. In one implementation, the first and second precursor flowings are successively repeated effective to form a mass of material on the substrate of the second monolayer composition. Additional and other implementations are contemplated.
摘要翻译：第一前体气体流入室内的衬底，有效地在衬底上形成第一单层。在室内的表面微波等离子体条件下，与第一前体气体不同组成的第二前体气体流入腔室内的第一单层，有效地与第一单层反应并在基底上形成第二单层，其在组成上不同第一个单层。第二单层包括第一单层和第二前体的组分。在一个实施方案中，第一和第二前体流动被连续重复有效地在第二单层组合物的基底上形成大量材料。考虑附加和其他实现。

3. 发明授权

US07268382B2 DRAM cells 失效
标题翻译： DRAM单元
公开(公告)号：US07268382B2
公开(公告)日：2007-09-11
申请号：US11449433
申请日：2006-06-07
申请人： Shenlin Chen , Trung Tri Doan , Guy T. Blalock , Lyle D. Breiner , Er-Xuan Ping
发明人： Shenlin Chen , Trung Tri Doan , Guy T. Blalock , Lyle D. Breiner , Er-Xuan Ping
IPC分类号： H01L29/72
CPC分类号： H01L27/10852 , H01L27/10817 , H01L28/84 , Y10S438/964
摘要： The invention includes a method of forming a rugged semiconductor-containing surface. A first semiconductor layer is formed over a substrate, and a second semiconductor layer is formed over the first semiconductor layer. Subsequently, a third semiconductor layer is formed over the second semiconductor layer, and semiconductor-containing seeds are formed over the third semiconductor layer. The seeds are annealed to form the rugged semiconductor-containing surface. The first, second and third semiconductor layers are part of a common stack, and can be together utilized within a storage node of a capacitor construction. The invention also includes semiconductor structures comprising rugged surfaces. The rugged surfaces can be, for example, rugged silicon.
摘要翻译：本发明包括形成坚固的含半导体的表面的方法。在衬底上形成第一半导体层，并且在第一半导体层上形成第二半导体层。随后，在第二半导体层上形成第三半导体层，并且在第三半导体层上形成含半导体的种子。将种子退火以形成坚固的含半导体的表面。第一，第二和第三半导体层是公共堆叠的一部分，并且可以在电容器结构的存储节点内一起使用。本发明还包括包括粗糙表面的半导体结构。坚固的表面可以是例如坚固的硅。

4. 发明授权

US07115529B2 Atomic layer deposition methods 失效
公开(公告)号：US07115529B2
公开(公告)日：2006-10-03
申请号：US10629011
申请日：2003-07-28
申请人： Trung Tri Doan , Guy T. Blalock , Gurtej S. Sandhu
发明人： Trung Tri Doan , Guy T. Blalock , Gurtej S. Sandhu
IPC分类号： H01L21/469
CPC分类号： H01L21/0228 , C23C16/38 , C23C16/403 , C23C16/45542 , C23C16/515 , H01L21/02178 , H01L21/02183 , H01L21/02186 , H01L21/02205 , H01L21/02274 , H01L21/28562 , H01L21/3141 , H01L21/31616 , H01L21/31683 , H01L21/76841
摘要： A first precursor gas is flowed to the substrate within the chamber effective to form a first monolayer on the substrate. A second precursor gas different in composition from the first precursor gas is flowed to the first monolayer within the chamber under surface microwave plasma conditions within the chamber effective to react with the first monolayer and form a second monolayer on the substrate which is different in composition from the first monolayer. The second monolayer includes components of the first monolayer and the second precursor. In one implementation, the first and second precursor flowings are successively repeated effective to form a mass of material on the substrate of the second monolayer composition. Additional and other implementations are contemplated.

5. 发明授权

US07022605B2 Atomic layer deposition methods 失效
公开(公告)号：US07022605B2
公开(公告)日：2006-04-04
申请号：US10293072
申请日：2002-11-12
申请人： Trung Tri Doan , Guy T. Blalock , Gurtej S. Sandhu
发明人： Trung Tri Doan , Guy T. Blalock , Gurtej S. Sandhu
IPC分类号： H01L21/44
CPC分类号： H01L21/0228 , C23C16/38 , C23C16/403 , C23C16/45542 , C23C16/515 , H01L21/02178 , H01L21/02183 , H01L21/02186 , H01L21/02205 , H01L21/02274 , H01L21/28562 , H01L21/3141 , H01L21/31616 , H01L21/31683 , H01L21/76841
摘要： A first precursor gas is flowed to the substrate within the chamber effective to form a first monolayer on the substrate. A second precursor gas different in composition from the first precursor gas is flowed to the first monolayer within the chamber under surface microwave plasma conditions within the chamber effective to react with the first monolayer and form a second monolayer on the substrate which is different in composition from the first monolayer. The second monolayer includes components of the first monolayer and the second precursor. In one implementation, the first and second precursor flowings are successively repeated effective to form a mass of material on the substrate of the second monolayer composition. Additional and other implementations are contemplated.

6. 发明授权

US07576012B2 Atomic layer deposition methods 有权
标题翻译：原子层沉积法
公开(公告)号：US07576012B2
公开(公告)日：2009-08-18
申请号：US11359098
申请日：2006-02-21
申请人： Trung Tri Doan , Guy T. Blalock , Gurtej S. Sandhu
发明人： Trung Tri Doan , Guy T. Blalock , Gurtej S. Sandhu
IPC分类号： H01L21/31
CPC分类号： H01L21/0228 , C23C16/38 , C23C16/403 , C23C16/45542 , C23C16/515 , H01L21/02178 , H01L21/02183 , H01L21/02186 , H01L21/02205 , H01L21/02274 , H01L21/28562 , H01L21/3141 , H01L21/31616 , H01L21/31683 , H01L21/76841
摘要： A first precursor gas is flowed to the substrate within the chamber effective to form a first monolayer on the substrate. A second precursor gas different in composition from the first precursor gas is flowed to the first monolayer within the chamber under surface microwave plasma conditions within the chamber effective to react with the first monolayer and form a second monolayer on the substrate which is different in composition from the first monolayer. The second monolayer includes components of the first monolayer and the second precursor. In one implementation, the first and second precursor flowings are successively repeated effective to form a mass of material on the substrate of the second monolayer composition. Additional and other implementations are contemplated.
摘要翻译：第一前体气体流入室内的衬底，有效地在衬底上形成第一单层。在室内的表面微波等离子体条件下，与第一前体气体不同组成的第二前体气体流入室内的第一单层，有效地与第一单层反应并在基底上形成第二单层，其在组成上不同第一个单层。第二单层包括第一单层和第二前体的组分。在一个实施方案中，第一和第二前体流动被连续重复有效地在第二单层组合物的基底上形成大量材料。考虑附加和其他实现。

7. 发明授权

US07528430B2 Electronic systems 失效
标题翻译：电子系统
公开(公告)号：US07528430B2
公开(公告)日：2009-05-05
申请号：US11449431
申请日：2006-06-07
申请人： Shenlin Chen , Trung Tri Doan , Guy T. Blalock , Lyle D. Breiner , Er-Xuan Ping
发明人： Shenlin Chen , Trung Tri Doan , Guy T. Blalock , Lyle D. Breiner , Er-Xuan Ping
IPC分类号： H01L29/72
CPC分类号： H01L27/10852 , H01L27/10817 , H01L28/84 , Y10S438/964
摘要： The invention includes a method of forming a rugged semiconductor-containing surface. A first semiconductor layer is formed over a substrate, and a second semiconductor layer is formed over the first semiconductor layer. Subsequently, a third semiconductor layer is formed over the second semiconductor layer, and semiconductor-containing seeds are formed over the third semiconductor layer. The seeds are annealed to form the rugged semiconductor-containing surface. The first, second and third semiconductor layers are part of a common stack, and can be together utilized within a storage node of a capacitor construction. The invention also includes semiconductor structures comprising rugged surfaces. The rugged surfaces can be, for example, rugged silicon.
摘要翻译：本发明包括形成坚固的含半导体的表面的方法。在衬底上形成第一半导体层，并且在第一半导体层上形成第二半导体层。随后，在第二半导体层上形成第三半导体层，并且在第三半导体层上形成含半导体的种子。将种子退火以形成坚固的含半导体的表面。第一，第二和第三半导体层是公共堆叠的一部分，并且可以在电容器结构的存储节点内一起使用。本发明还包括包括粗糙表面的半导体结构。坚固的表面可以是例如坚固的硅。

8. 发明授权

US07405438B2 Capacitor constructions and semiconductor structures 失效
标题翻译：电容器结构和半导体结构
公开(公告)号：US07405438B2
公开(公告)日：2008-07-29
申请号：US10945774
申请日：2004-09-20
申请人： Shenlin Chen , Trung Tri Doan , Guy T. Blalock , Lyle D. Breiner , Er-Xuan Ping
发明人： Shenlin Chen , Trung Tri Doan , Guy T. Blalock , Lyle D. Breiner , Er-Xuan Ping
IPC分类号： H01L29/72
CPC分类号： H01L27/10852 , H01L27/10817 , H01L28/84 , Y10S438/964
摘要： The invention includes a method of forming a rugged semiconductor-containing surface. A first semiconductor layer is formed over a substrate, and a second semiconductor layer is formed over the first semiconductor layer. Subsequently, a third semiconductor layer is formed over the second semiconductor layer, and semiconductor-containing seeds are formed over the third semiconductor layer. The seeds are annealed to form the rugged semiconductor-containing surface. The first, second and third semiconductor layers are part of a common stack, and can be together utilized within a storage node of a capacitor construction. The invention also includes semiconductor structures comprising rugged surfaces. The rugged surfaces can be, for example, rugged silicon.
摘要翻译：本发明包括形成坚固的含半导体的表面的方法。在衬底上形成第一半导体层，并且在第一半导体层上形成第二半导体层。随后，在第二半导体层上形成第三半导体层，并且在第三半导体层上形成含半导体的种子。将种子退火以形成坚固的含半导体的表面。第一，第二和第三半导体层是公共堆叠的一部分，并且可以在电容器结构的存储节点内一起使用。本发明还包括包括粗糙表面的半导体结构。坚固的表面可以是例如坚固的硅。

9. 发明授权

US07097782B2 Method of exposing a substrate to a surface microwave plasma, etching method, deposition method, surface microwave plasma generating apparatus, semiconductor substrate etching apparatus, semiconductor substrate deposition apparatus, and microwave plasma generating antenna assembly 失效
标题翻译：将基板曝光于表面微波等离子体的方法，蚀刻方法，沉积方法，表面微波等离子体生成装置，半导体基板蚀刻装置，半导体基板沉积装置和微波等离子体产生天线组件
公开(公告)号：US07097782B2
公开(公告)日：2006-08-29
申请号：US10293025
申请日：2002-11-12
申请人： Guy T. Blalock , Trung Tri Doan
发明人： Guy T. Blalock , Trung Tri Doan
IPC分类号： H01L21/00
CPC分类号： H01J37/3222 , H01J37/32192 , H01Q1/366
摘要： In certain implementations, methods and apparatus include an antenna assembly having at least two overlapping and movable surface microwave plasma antennas. The antennas have respective pluralities of microwave transmissive openings formed therethrough. At least some of the openings of the respective antennas overlap with at least some of the openings of another antenna, and form an effective plurality of microwave transmissive openings through the antenna assembly. Microwave energy is passed through the effective plurality of openings of the antenna assembly and to a flowing gas effective to form a surface microwave plasma onto a substrate received within the processing chamber. At least one of the antennas is moved relative to another of the antennas to change at least one of size and shape of the effective plurality of openings through the antenna assembly effective to modify microwave energy passed through the antenna assembly to the substrate.
摘要翻译：在某些实施方案中，方法和装置包括具有至少两个重叠和可移动的表面微波等离子体天线的天线组件。天线具有通过其形成的相应的多个微波透射开口。各个天线的至少一些开口与另一个天线的至少一些开口重叠，并且通过天线组件形成有效的多个微波透射开口。微波能量通过天线组件的有效多个开口并流过有效地将表面微波等离子体形成在接收在处理室内的衬底上的流动气体。天线中的至少一个相对于另一个天线移动，以通过天线组件改变有效多个开口的尺寸和形状中的至少一个，其有效地将通过天线组件的微波能量修改到衬底。

10. 发明授权

US06916723B2 Methods of forming rugged semiconductor-containing surfaces 失效
标题翻译：形成坚固的含半导体的表面的方法
公开(公告)号：US06916723B2
公开(公告)日：2005-07-12
申请号：US10423111
申请日：2003-04-25
申请人： Shenlin Chen , Trung Tri Doan , Guy T. Blalock , Lyle D. Breiner , Er-Xuan Ping
发明人： Shenlin Chen , Trung Tri Doan , Guy T. Blalock , Lyle D. Breiner , Er-Xuan Ping
IPC分类号： H01L21/02 , H01L21/20 , H01L21/8242 , H01L23/58
CPC分类号： H01L27/10852 , H01L27/10817 , H01L28/84 , Y10S438/964
摘要： The invention includes a method of forming a rugged semiconductor-containing surface. A first semiconductor layer is formed over a substrate, and a second semiconductor layer is formed over the first semiconductor layer. Subsequently, a third semiconductor layer is formed over the second semiconductor layer, and semiconductor-containing seeds are formed over the third semiconductor layer. The seeds are annealed to form the rugged semiconductor-containing surface. The first, second and third semiconductor layers are part of a common stack, and can be together utilized within a storage node of a capacitor construction. The invention also includes semiconductor structures comprising rugged surfaces. The rugged surfaces can be, for example, rugged silicon.
摘要翻译：本发明包括形成坚固的含半导体的表面的方法。在衬底上形成第一半导体层，并且在第一半导体层上形成第二半导体层。随后，在第二半导体层上形成第三半导体层，并且在第三半导体层上形成含半导体的种子。将种子退火以形成坚固的含半导体的表面。第一，第二和第三半导体层是公共堆叠的一部分，并且可以在电容器结构的存储节点内一起使用。本发明还包括包括粗糙表面的半导体结构。坚固的表面可以是例如坚固的硅。

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