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1. 发明申请

US20100003828A1 METHODS FOR ADJUSTING CRITICAL DIMENSION UNIFORMITY IN AN ETCH PROCESS WITH A HIGHLY CONCENTRATED UNSATURATED HYDROCARBON GAS 审中-公开
标题翻译：在高浓度不饱和碳氢化合物气体的调和过程中调整关键尺寸均匀性的方法
公开(公告)号：US20100003828A1
公开(公告)日：2010-01-07
申请号：US11946562
申请日：2007-11-28
申请人： Guowen Ding , Changhun Lee , Teh-Tien Su
发明人： Guowen Ding , Changhun Lee , Teh-Tien Su
IPC分类号： H01L21/467
CPC分类号： H01L21/32136
摘要： Methods for etching a metal material layer disposed on a substrate to form features with desired profile and uniform critical dimension (CD) of the features across the substrate. In one embodiment, a method for etching a material layer disposed on a substrate includes providing a substrate having a metal layer disposed on a substrate into an etch reactor, flowing a gas mixture containing at least a halogen containing gas and a passivation gas into the reactor, the passivation gas including a nitrogen containing gas and an unsaturated hydrocarbon gas, wherein the nitrogen gas and the unsaturated hydrocarbon gas and etching the metal layer using a plasma formed from the gas mixture. The CD uniformity could be conveniently, efficiently tuned by the gas ratio, if the concentration of the unsaturated hydrocarbon gas is high enough that the molecular ratio of the unsaturated hydrocarbon gas in the diluent gas times the reactor pressure in milliTorr is greater than 1.25.
摘要翻译：用于蚀刻设置在基底上的金属材料层以形成具有跨越衬底的特征所需轮廓和均匀临界尺寸（CD）的特征的方法。在一个实施例中，用于蚀刻设置在衬底上的材料层的方法包括：将具有设置在衬底上的金属层的衬底提供到蚀刻反应器中，将含有至少含卤素气体和钝化气体的气体混合物流入反应器包括含氮气体和不饱和烃气体的钝化气体，其中氮气和不饱和烃气体使用由气体混合物形成的等离子体蚀刻金属层。如果不饱和烃气体的浓度足够高，稀释气体中的不饱和烃气体的分子比（以毫乇为单位的反应器压力）大于1.25，则可以通过气体比率方便地，有效地调节CD均匀性。

2. 发明申请

US20120094499A1 METHOD OF PERFORMING AN IN SITU CHAMBER CLEAN 审中-公开
标题翻译：在实际室内清洁的方法
公开(公告)号：US20120094499A1
公开(公告)日：2012-04-19
申请号：US13087227
申请日：2011-04-14
申请人： Siu Tang Ng , Guowen Ding , Teh-Tien Su , Zhuang Li , Benjamin Schwarz , Benjamin Lee
发明人： Siu Tang Ng , Guowen Ding , Teh-Tien Su , Zhuang Li , Benjamin Schwarz , Benjamin Lee
IPC分类号： H01L21/3065
CPC分类号： B08B7/0035 , H01J37/32862
摘要： Methods of performing in situ chamber cleaning for etch chambers are described.
摘要翻译：描述了对蚀刻室进行原位室清洁的方法。

3. 发明授权

US08101025B2 Method for controlling corrosion of a substrate 有权
标题翻译：控制基板腐蚀的方法
公开(公告)号：US08101025B2
公开(公告)日：2012-01-24
申请号：US11363833
申请日：2006-02-27
申请人： Eu Jin Lim , Chungdee Pong , Changhun Lee , Mark Kawaguchi , Guowen Ding
发明人： Eu Jin Lim , Chungdee Pong , Changhun Lee , Mark Kawaguchi , Guowen Ding
IPC分类号： B08B7/04 , B08B7/00
CPC分类号： B08B3/08 , B08B7/0035 , C23F4/00 , H01L21/02071 , H01L21/31138 , H01L21/32138 , H01L28/60 , Y10S438/906
摘要： A method for controlling corrosion of a substrate is provided herein. In one embodiment, a method for controlling corrosion of a substrate includes the steps of providing a substrate having a patterned photoresist layer with a metallic residue disposed thereon; exposing the substrate to a hydrogen-based plasma to remove the metallic residue; and removing the photoresist. The metallic residue may comprise residue from etching at least one of aluminum or copper. The metallic residue may further comprise a halogen compound from etching a metal-containing layer with a halogen-based process gas. The hydrogen-based plasma may comprise hydrogen (H2) and may further comprise at least one of nitrogen (N2) and water (H2O) vapor. The hydrogen-based plasma may further comprise an inert gas, such as argon (Ar).
摘要翻译：本发明提供一种控制基板腐蚀的方法。在一个实施例中，一种用于控制衬底腐蚀的方法包括以下步骤：提供具有设置在其上的金属残留物的图案化光致抗蚀剂层的衬底; 将基底暴露于氢基等离子体以除去金属残余物; 并去除光致抗蚀剂。金属残留物可以包含蚀刻铝或铜中的至少一种的残余物。金属残留物还可以包含卤素化合物，其用卤素基工艺气体蚀刻含金属层。氢基等离子体可以包含氢（H 2），并且还可以包含氮（N 2）和水（H 2 O）蒸气中的至少一种。氢基等离子体还可以包含惰性气体，例如氩（Ar）。

4. 发明申请

US20060137710A1 Method for controlling corrosion of a substrate 有权
标题翻译：控制基板腐蚀的方法
公开(公告)号：US20060137710A1
公开(公告)日：2006-06-29
申请号：US11363833
申请日：2006-02-27
申请人： Eu Lim , Chungdee Pong , Changhun Lee , Mark Kawaguchi , Guowen Ding
发明人： Eu Lim , Chungdee Pong , Changhun Lee , Mark Kawaguchi , Guowen Ding
IPC分类号： B08B6/00 , C23F1/00
CPC分类号： B08B3/08 , B08B7/0035 , C23F4/00 , H01L21/02071 , H01L21/31138 , H01L21/32138 , H01L28/60 , Y10S438/906
摘要： A method for controlling corrosion of a substrate is provided herein. In one embodiment, a method for controlling corrosion of a substrate includes the steps of providing a substrate having a patterned photoresist layer with a metallic residue disposed thereon; exposing the substrate to a hydrogen-based plasma to remove the metallic residue; and removing the photoresist. The metallic residue may comprise residue from etching at least one of aluminum or copper. The metallic residue may further comprise a halogen compound from etching a metal-containing layer with a halogen-based process gas. The hydrogen-based plasma may comprise hydrogen (H2) and may further comprise at least one of nitrogen (N2) and water (H2O) vapor. The hydrogen-based plasma may further comprise an inert gas, such as argon (Ar).
摘要翻译：本发明提供一种控制基板腐蚀的方法。在一个实施例中，一种用于控制衬底腐蚀的方法包括以下步骤：提供具有设置在其上的金属残留物的图案化光致抗蚀剂层的衬底; 将基底暴露于氢基等离子体以除去金属残余物; 并去除光致抗蚀剂。金属残留物可以包含蚀刻铝或铜中的至少一种的残余物。金属残留物还可以包含卤素化合物，其用卤素基工艺气体蚀刻含金属层。氢基等离子体可以包含氢（H 2 O 2），并且还可以包含氮（N 2/2）和水（H 2 H 2）中的至少一种 > O）蒸气。氢基等离子体还可以包含惰性气体，例如氩（Ar）。

5. 发明授权

US08557615B2 TCO materials for solar applications 失效
标题翻译： TCO材料用于太阳能应用
公开(公告)号：US08557615B2
公开(公告)日：2013-10-15
申请号：US13310724
申请日：2011-12-03
申请人： Guowen Ding , Mohd Fadzli Anwar Hassan , Hien Minh Huu Le , Zhi-Wen Sun
发明人： Guowen Ding , Mohd Fadzli Anwar Hassan , Hien Minh Huu Le , Zhi-Wen Sun
IPC分类号： H01L21/00
CPC分类号： H01B1/08 , H01L31/022466 , H01L31/022483 , H01L31/0749 , H01L31/1884 , Y02E10/541
摘要： A method for forming a transparent conductive oxide (TCO) film for use in a TFPV solar device comprises the formation of a tin oxide film doped with between about 5 volume % and about 40 volume % antimony (ATO). Advantageously, the Sb concentration generally ranges from about 15 volume % to about 20 volume % and more advantageously, the Sb concentration is about 19 volume %. The ATO films exhibited almost no change in transmission characteristics between about 300 nm and about 1100 nm or resistivity after either a 15 hour exposure to water or an anneal in air for 8 minutes at 650 C, which indicated the excellent durability. Control sample of Al doped zinc oxide (AZO) exhibited degradation of resistivity for both a 15 hour exposure to water and an anneal in air for 8 minutes at 650 C.
摘要翻译：用于形成用于TFPV太阳能装置的透明导电氧化物（TCO）膜的方法包括形成掺杂有约5体积％至约40体积％的锑（ATO）的氧化锡膜。有利地，Sb浓度通常在约15体积％至约20体积％的范围内，更有利地，Sb浓度为约19体积％。 ATO膜在暴露于水中15小时或在空气中在650℃下退火8分钟后，在约300nm至约1100nm之间的透射特性几乎没有显示出变化或电阻率，这表明耐久性优异。 Al掺杂的氧化锌（AZO）的对照样品在暴露于水的15小时和在空气中在650℃下退火8分钟都表现出电阻率的降低。

6. 发明申请

US20130143354A1 TCO MATERIALS FOR SOLAR APPLICATIONS 失效
标题翻译： TCO材料用于太阳能应用
公开(公告)号：US20130143354A1
公开(公告)日：2013-06-06
申请号：US13310724
申请日：2011-12-03
申请人： Guowen Ding , Mohd Fadzli Anwar Hassan , Hien Minh Huu Le , Zhi-Wen Sun
发明人： Guowen Ding , Mohd Fadzli Anwar Hassan , Hien Minh Huu Le , Zhi-Wen Sun
IPC分类号： H01L31/18 , H01B1/08
CPC分类号： H01B1/08 , H01L31/022466 , H01L31/022483 , H01L31/0749 , H01L31/1884 , Y02E10/541
摘要： A method for forming a transparent conductive oxide (TCO) film for use in a TFPV solar device comprises the formation of a tin oxide film doped with between about 5 volume % and about 40 volume % antimony (ATO). Advantageously, the Sb concentration generally ranges from about 15 volume % to about 20 volume % and more advantageously, the Sb concentration is about 19 volume %. The ATO films exhibited almost no change in transmission characteristics between about 300 nm and about 1100 nm or resistivity after either a 15 hour exposure to water or an anneal in air for 8 minutes at 650 C, which indicated the excellent duarability. Control sample of Al doped zinc oxide (AZO) exhibited degradation of resistivity for both a 15 hour exposure to water and an anneal in air for 8 minutes at 650 C.
摘要翻译：用于形成用于TFPV太阳能装置的透明导电氧化物（TCO）膜的方法包括形成掺杂有约5体积％至约40体积％的锑（ATO）的氧化锡膜。有利地，Sb浓度通常在约15体积％至约20体积％的范围内，更有利地，Sb浓度为约19体积％。 ATO膜在暴露于水中15小时或在空气中在650℃退火8分钟后，在约300nm至约1100nm之间的透射特性或电阻率几乎没有显示出变化，这表明极好的二次性。 Al掺杂的氧化锌（AZO）的对照样品在暴露于水的15小时和在空气中在650℃下退火8分钟都表现出电阻率的降低。

7. 发明申请

US20130136919A1 METHOD OF GENERATING HIGH PURITY BISMUTH OXIDE 有权
公开(公告)号：US20130136919A1
公开(公告)日：2013-05-30
申请号：US13307301
申请日：2011-11-30
申请人： Guowen Ding , Mohd Fadzli Anwar Hassan , Hien Minh Huu Le , Zhi-Wen Sun
发明人： Guowen Ding , Mohd Fadzli Anwar Hassan , Hien Minh Huu Le , Zhi-Wen Sun
IPC分类号： B32B3/00 , B32B13/04 , B05D1/36 , B05D3/02 , C23C14/34 , B32B17/06 , B32B15/04
CPC分类号： C23C14/086 , C23C14/024 , C23C14/5806 , Y10T428/12549 , Y10T428/265
摘要： A method for forming and protecting high quality bismuth oxide films comprises depositing a transparent thin film on a substrate comprising one of Si, alkali metals, or alkaline earth metals. The transparent thin film is stable at room temperature and at higher temperatures and serves as a diffusion barrier for the diffusion of impurities from the substrate into the bismuth oxide. Reactive sputtering, sputtering from a compound target, or reactive evaporation are used to deposit a bismuth oxide film above the diffusion barrier.

8. 发明授权

US08665511B2 Electrochromic device with improved transparent conductor and method for forming the same 失效
标题翻译：具有改进的透明导体的电致变色器件及其形成方法
公开(公告)号：US08665511B2
公开(公告)日：2014-03-04
申请号：US13338074
申请日：2011-12-27
申请人： Hien Minh Huu Le , Thai Cheng Chua , Guowen Ding , Minh Anh Nguyen , Yu Wang , Guizhen Zhang
发明人： Hien Minh Huu Le , Thai Cheng Chua , Guowen Ding , Minh Anh Nguyen , Yu Wang , Guizhen Zhang
IPC分类号： G02F1/153
CPC分类号： G02F1/155
摘要： Embodiments provided herein describe electrochromic devices and methods for forming electrochromic devices. The electrochromic devices include a transparent substrate, a transparent conducting oxide layer coupled to the transparent substrate, and a layer of electrochromic material coupled to the transparent conducting oxide layer. The transparent conducting oxide layer includes indium and zinc.
摘要翻译：本文提供的实施例描述了用于形成电致变色器件的电致变色器件和方法。电致变色器件包括透明衬底，耦合到透明衬底的透明导电氧化物层和耦合到透明导电氧化物层的电致变色材料层。透明导电氧化物层包括铟和锌。

9. 发明申请

US20130319847A1 METHODS AND APPARATUSES FOR LOW RESISTIVITY Ag THIN FILM USING COLLIMATED SPUTTERING 审中-公开
标题翻译：低电阻Ag薄膜的使用方法和装置
公开(公告)号：US20130319847A1
公开(公告)日：2013-12-05
申请号：US13489079
申请日：2012-06-05
申请人： Guowen Ding , Mohd Fadzli Anwar Hassan , Hien Minh Huu Le , Zhi-Wen Sun
发明人： Guowen Ding , Mohd Fadzli Anwar Hassan , Hien Minh Huu Le , Zhi-Wen Sun
IPC分类号： C23C14/34 , C23C14/14 , C23C14/08
CPC分类号： C03C17/36 , C03C17/3644 , C03C17/366 , C03C17/3681 , C23C14/086 , C23C14/185 , C23C14/562
摘要： A method for making low emissivity panels, comprising forming highly smooth layers of silver on highly smooth layers of base or seed films. The highly smooth layers can be achieved by collimated sputtering, lowering the angular distribution of the sputtered particles when reaching the substrate.
摘要翻译：一种用于制造低辐射面板的方法，包括在基底或种子膜的高度光滑的层上形成高度光滑的银层。高度平滑的层可以通过准直的溅射来实现，当到达衬底时降低溅射颗粒的角分布。

10. 发明申请

US20130163064A1 Electrochromic Device With Improved Transparent Conductor And Method For Forming The Same 失效
标题翻译：具有改进的透明导体的电致变色器件及其形成方法
公开(公告)号：US20130163064A1
公开(公告)日：2013-06-27
申请号：US13338074
申请日：2011-12-27
申请人： Hien Minh Huu Le , Thai Cheng Chua , Guowen Ding , Minh Anh Anh Nguyen , Yu Wang , Guizhen Zhang
发明人： Hien Minh Huu Le , Thai Cheng Chua , Guowen Ding , Minh Anh Anh Nguyen , Yu Wang , Guizhen Zhang
IPC分类号： G02F1/153 , B05D5/12 , B05D5/06
CPC分类号： G02F1/155
摘要： Embodiments provided herein describe electrochromic devices and methods for forming electrochromic devices. The electrochromic devices include a transparent substrate, a transparent conducting oxide layer coupled to the transparent substrate, and a layer of electrochromic material coupled to the transparent conducting oxide layer. The transparent conducting oxide layer includes indium and zinc.
摘要翻译：本文提供的实施例描述了用于形成电致变色器件的电致变色器件和方法。电致变色器件包括透明衬底，耦合到透明衬底的透明导电氧化物层和耦合到透明导电氧化物层的电致变色材料层。透明导电氧化物层包括铟和锌。

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