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1. 发明授权

US06199874B1 Microelectromechanical accelerometer for automotive applications 失效
标题翻译：用于汽车应用的微机电加速度计
公开(公告)号：US06199874B1
公开(公告)日：2001-03-13
申请号：US08568845
申请日：1995-12-07
申请人： Gregory J. Galvin , Timothy J. Davis , Noel C. MacDonald
发明人： Gregory J. Galvin , Timothy J. Davis , Noel C. MacDonald
IPC分类号： B60G1700
CPC分类号： G01P15/131 , B81B2201/0235 , B81B2203/051 , B81C1/00619 , B81C2201/0132 , G01P1/006 , G01P15/0802 , G01P15/125 , G01P2015/0814 , G01P2015/0817
摘要： A micromechanical capacitive accelerometer is provided from a single silicon wafer. The basic structure of the micromechanical accelerometer is etched in the wafer to form a released portion in the substrate, and the released and remaining portions of the substrate are coated with metal under conditions sufficient to form a micromechanical capacitive accelerometer. The substrate is preferably etched using reactive-ion etching for at least the first etch step in the process that forms the basic structure, although in another preferred embodiment, all etching is reactive-ion etching. The accelerometer also may comprise a signal-conditioned accelerometer wherein signal-conditioning circuitry is provided on the same wafer from which the accelerometer is formed, and VLSI electronics may be integrated on the same wafer from which the accelerometer is formed. The micromechanical capacitive accelerometer can be used for airbag deployment, active suspension control, active steering control, anti-lock braking, and other control systems requiring accelerometers having high sensitivity, extreme accuracy and resistance to out of plane forces.
摘要翻译：从单个硅晶片提供微机电电容式加速度计。在晶片中蚀刻微机械加速度计的基本结构，以在衬底中形成释放部分，并且在足以形成微机械电容式加速度计的条件下，用金属涂覆衬底的释放和剩余部分。在形成基本结构的工艺中，优选使用反应离子蚀刻对至少第一蚀刻步骤蚀刻衬底，尽管在另一优选实施例中，所有蚀刻都是反应离子蚀刻。加速度计还可以包括信号调节加速度计，其中信号调节电路设置在与其形成加速度计的同一晶片上，并且VLSI电子器件可以集成在形成加速度计的相同晶片上。微机电容加速度计可用于安全气囊部署，主动悬架控制，主动转向控制，防抱死制动以及需要具有高灵敏度，极高精度和抗平面外力的加速度计的其他控制系统。

2. 发明授权

US06149190A Micromechanical accelerometer for automotive applications 失效
标题翻译：用于汽车应用的微机械加速度计
公开(公告)号：US06149190A
公开(公告)日：2000-11-21
申请号：US030641
申请日：1998-04-03
申请人： Gregory J. Galvin , Timothy J. Davis , Noel C. MacDonald
发明人： Gregory J. Galvin , Timothy J. Davis , Noel C. MacDonald
IPC分类号： B81B3/00 , B81C1/00 , B81C99/00 , G01P1/00 , G01P15/08 , G01P15/125 , G01P15/13 , B60R21/32 , G01P15/25
CPC分类号： G01P15/131 , B81C1/00619 , G01P1/006 , G01P15/0802 , G01P15/125 , B81B2201/0235 , B81B2203/051 , B81C2201/0132 , G01P2015/0814
摘要： A micromechanical capacitive accelerometer is provided from a single silicon wafer. The basic structure of the micromechanical accelerometer is etched in the wafer to form a released portion in the substrate, and the released and remaining portions of the substrate are coated with metal under conditions sufficient to form a micromechanical capacitive accelerometer. The substrate is preferably etched using reactive-ion etching for at least the first etch step in the process that forms the basic structure, although in another preferred embodiment, all etching is reactive-ion etching. The accelerometer also may comprise a signal-conditioned accelerometer wherein signal-conditioning circuitry is provided on the same wafer from which the accelerometer is formed, and VLSI electronics may be integrated on the same wafer from which the accelerometer is formed. The micromechanical capacitive accelerometer can be used for airbag deployment, active suspension control, active steering control, anti-lock braking, and other control systems requiring accelerometers having high sensitivity, extreme accuracy and resistance to out of plane forces.
摘要翻译：从单个硅晶片提供微机电电容式加速度计。在晶片中蚀刻微机械加速度计的基本结构，以在衬底中形成释放部分，并且在足以形成微机械电容式加速度计的条件下，用金属涂覆衬底的释放和剩余部分。在形成基本结构的工艺中，优选使用反应离子蚀刻对至少第一蚀刻步骤蚀刻衬底，尽管在另一优选实施例中，所有蚀刻都是反应离子蚀刻。加速度计还可以包括信号调节加速度计，其中信号调节电路设置在与其形成加速度计的同一晶片上，并且VLSI电子器件可以集成在形成加速度计的相同晶片上。微机电容加速度计可用于安全气囊部署，主动悬架控制，主动转向控制，防抱死制动以及需要具有高灵敏度，极高精度和抗平面外力的加速度计的其他控制系统。

3. 发明授权

US06239473B1 Trench isolation for micromechanical devices 有权
标题翻译：微机械装置的沟槽隔离
公开(公告)号：US06239473B1
公开(公告)日：2001-05-29
申请号：US09231082
申请日：1999-01-14
申请人： Scott G. Adams , Kevin A. Shaw , Russell Y. Webb , Bryan W. Reed , Noel C. MacDonald , Timothy J. Davis
发明人： Scott G. Adams , Kevin A. Shaw , Russell Y. Webb , Bryan W. Reed , Noel C. MacDonald , Timothy J. Davis
IPC分类号： H01L2984
CPC分类号： H01L21/76224 , B81B2203/0118 , B81B2203/033 , B81C1/00142 , B81C1/00698
摘要： An isolation process which enhances the performance of silicon micromechanical devices incorporates dielectric isolation segments within the silicon microstructure, which is otherwise composed of an interconnected grid of cantilevered beams. A metal layer on top of the beams provides interconnects and also allows contact to the silicon beams, electrically activating the device for motion or transduction. Multiple conduction paths are incorporated through a metal patterning step prior to structure definition. The invention improves manufacturability of previous processes by performing all lithographic patterning steps on flat topographies, and removing complicated metal sputtering steps required of most high aspect ratio processes. With little modification, the invention can be implemented with integrated circuit fabrication sequences for fully integrated devices.
摘要翻译：提高硅微机械器件性能的隔离工艺在硅微结构内部包含介电隔离段，否则由微悬臂梁的互连网格组成。在梁的顶部上的金属层提供互连并且还允许与硅束的接触，电激活装置以进行运动或转导。在结构定义之前，通过金属图案化步骤并入多个导电路径。本发明通过在平面形貌上进行所有平版印刷图案化步骤，以及去除大多数高纵横比工艺所需的复杂金属溅射步骤，从而提高先前工艺的可制造性。通过很少的修改，本发明可以用于完全集成的器件的集成电路制造序列。

4. 发明授权

US06342430B1 Trench isolation for micromechanical devices 有权
标题翻译：微机械装置的沟槽隔离
公开(公告)号：US06342430B1
公开(公告)日：2002-01-29
申请号：US09548680
申请日：2000-04-13
申请人： Scott G. Adams , Kevin A. Shaw , Russell Y. Webb , Bryan W. Reed , Noel C. MacDonald , Timothy J. Davis
发明人： Scott G. Adams , Kevin A. Shaw , Russell Y. Webb , Bryan W. Reed , Noel C. MacDonald , Timothy J. Davis
IPC分类号： H01L2176
CPC分类号： H01L21/76224 , B81B2203/0118 , B81B2203/033 , B81C1/00142 , B81C1/00698
摘要： An isolation process which enhances the performance of silicon micromechanical devices incorporates dielectric isolation segments within the silicon microstructure, which is otherwise composed of an interconnected grid of cantilevered beams. A metal layer on top of the beams provides interconnects and also allows contact to the silicon beams, electrically activating the device for motion or transduction. Multiple conduction paths are incorporated through a metal patterning step prior to structure definition. The invention improves manufacturability of previous processes by performing all lithographic patterning steps on flat topographies, and removing complicated metal sputtering steps required of most high aspect ratio processes. With little modification, the invention can be implemented with in grated circuit fabrication sequences for fully integrated devices.
摘要翻译：提高硅微机械器件性能的隔离工艺在硅微结构内部包含介电隔离段，否则由微悬臂梁的互连网格组成。在梁的顶部上的金属层提供互连并且还允许与硅束的接触，电激活装置以进行运动或转导。在结构定义之前，通过金属图案化步骤并入多个导电路径。本发明通过在平面形貌上进行所有平版印刷图案化步骤，以及去除大多数高纵横比工艺所需的复杂金属溅射步骤，从而提高先前工艺的可制造性。通过很少的修改，本发明可以用于完全集成的器件的格栅电路制造顺序。

5. 发明授权

US07682956B2 Three-dimensional metal microfabrication process and devices produced thereby 有权
标题翻译：三维金属微细加工工艺及其制造的装置
公开(公告)号：US07682956B2
公开(公告)日：2010-03-23
申请号：US11445067
申请日：2006-06-01
申请人： Masaru P. Rao , Marco F. Aimi , Noel C. MacDonald
发明人： Masaru P. Rao , Marco F. Aimi , Noel C. MacDonald
IPC分类号： H01L21/3205 , H01L21/4763
CPC分类号： C23F4/00 , B81B2201/042 , B81B2203/033 , B81C1/00126 , B81C2201/0132 , Y10T29/49117
摘要： The present invention relates, in general, to a method for three-dimensional (3D) microfabrication of complex, high aspect ratio structures with arbitrary surface height profiles in metallic materials, and to devices fabricated in accordance with this process. The method builds upon anisotropic deep etching methods for metallic materials previously developed by the inventors by enabling simplified realization of complex, non-prismatic structural geometries composed of multiple height levels and sloping and/or non-planar surface profiles. The utility of this approach is demonstrated in the fabrication of a sloping electrode structure intended for application in bulk micromachined titanium micromirror devices, however such a method could find use in the fabrication of any number of other microactuator, microsensor, microtransducer, or microstructure devices as well.
摘要翻译：本发明一般涉及用于金属材料中具有任意表面高度分布的复合高纵横比结构的三维（3D）微细加工方法，以及根据该方法制造的器件。该方法基于由本发明人先前开发的金属材料的各向异性深蚀刻方法，其通过使得能够简化实现由多个高度级别和倾斜和/或非平面表面轮廓组成的复杂的非棱柱结构几何形状。在制造用于体积微加工的钛微镜器件中的倾斜电极结构的过程中证明了这种方法的实用性，然而这种方法可用于制造任何数量的其它微型致动器，微传感器，微传感器或微结构器件，如好。

6. 发明授权

US07022617B2 Small scale wires with microelectromechanical devices 有权
标题翻译：小型电线与微机电装置
公开(公告)号：US07022617B2
公开(公告)日：2006-04-04
申请号：US10606812
申请日：2003-06-26
申请人： Kanakasabapathi Subramanian , Noel C. MacDonald
发明人： Kanakasabapathi Subramanian , Noel C. MacDonald
IPC分类号： H01L21/461
CPC分类号： B81C1/00142 , B81B2203/0361 , B81C1/00071 , B81C1/00111 , B81C2201/0112 , Y10S977/70 , Y10S977/762
摘要： A process cycles between etching and passivating chemistries to create rough sidewalls that are converted into small structures. In one embodiment, a mask is used to define lines in a single crystal silicon wafer. The process creates ripples on sidewalls of the lines corresponding to the cycles. The lines are oxidized in one embodiment to form a silicon wire corresponding to each ripple. The oxide is removed in a further embodiment to form structures ranging from micro sharp tips to photonic arrays of wires. Fluidic channels are formed by oxidizing adjacent rippled sidewalls. The same mask is also used to form other structures for MEMS devices.
摘要翻译：蚀刻和钝化化学物质之间的过程循环，以产生转变成小结构的粗糙侧壁。在一个实施例中，使用掩模来限定单晶硅晶片中的线。该过程在对应于循环的线的侧壁上产生波纹。在一个实施例中，线被氧化以形成对应于每个纹波的硅线。在另一个实施方案中去除氧化物以形成从微尖端到光线阵列的结构。通过氧化相邻的波纹侧壁形成流体通道。同样的掩模也用于形成MEMS器件的其他结构。

7. 发明授权

US06462391B1 Suspended moving channels and channel actuators for microfluidic applications and method for making 失效
标题翻译：用于微流控应用的悬挂移动通道和通道执行器和制造方法
公开(公告)号：US06462391B1
公开(公告)日：2002-10-08
申请号：US09686885
申请日：2000-10-12
申请人： John M. Chong , Noel C. MacDonald
发明人： John M. Chong , Noel C. MacDonald
IPC分类号： H01L2982
CPC分类号： B81C1/00587 , B81B2201/051 , Y10S366/03
摘要： A microfabrication process for making enclosed, subsurface microfluidic tunnels, cavities, channels, and the like within suspended beams includes etching a single crystal silicon wafer to produce trenches defining a beam. The trench walls are oxidized, and the interior of the beam is etched through a channel via on the top of the beam to form a hollow beam with oxide sidewalls. The beam is released, and the via is then sealed to form an enclosed released channel beam.
摘要翻译：用于在悬挂梁内制造封闭的，地下微流体通道，空腔，通道等的微加工方法包括蚀刻单晶硅晶片以产生限定光束的沟槽。沟槽壁被氧化，并且光束的内部通过在光束顶部上的通道蚀刻而形成具有氧化物侧壁的中空光束。梁被释放，然后将通孔密封以形成封闭释放的通道梁。

8. 发明授权

US6051866A Microstructures and single mask, single-crystal process for fabrication thereof 有权
标题翻译：微结构和单掩模，其制造的单晶工艺
公开(公告)号：US6051866A
公开(公告)日：2000-04-18
申请号：US132254
申请日：1998-08-11
申请人： Kevin A. Shaw , Z. Lisa Zhang , Noel C. MacDonald
发明人： Kevin A. Shaw , Z. Lisa Zhang , Noel C. MacDonald
IPC分类号： C23F4/00 , B81B3/00 , G01P15/08 , G01P15/125 , H01L21/302 , H01L21/3065 , H01L29/82 , H01L29/84
CPC分类号： B81C1/00619 , B81C1/00142 , B81C1/0015 , B81C1/00626 , G01P15/0802 , G01P15/125 , B81C2201/0112 , B81C2201/0132 , B81C2201/053 , G01P2015/0814 , G01P2015/0817 , G01P2015/0828 , Y10S148/05 , Y10S73/01
摘要： A single mask, low temperature reactive ion etching process for fabricating high aspect ratio, released single crystal microelectromechanical structures independently of crystal orientation.
摘要翻译：用于制造高纵横比的单一掩模，低温反应离子蚀刻工艺，独立于晶体取向释放单晶微机电结构。

9. 发明授权

US5856722A Microelectromechanics-based frequency signature sensor 失效
标题翻译：基于微机电的频率签名传感器
公开(公告)号：US5856722A
公开(公告)日：1999-01-05
申请号：US771681
申请日：1996-12-23
申请人： Dan Haronian , Noel C. MacDonald
发明人： Dan Haronian , Noel C. MacDonald
IPC分类号： G01H3/08 , H03H9/50 , H01L41/08
CPC分类号： G01H3/08 , H03H9/50
摘要： An acoustic filter array of microelectromechanical beams each having a characteristic resonance frequency response to mechanical and/or acoustical vibration. The array divides incoming acoustic signals into a plurality of discrete spectral components, each of which may be separately detected and converted into corresponding electrical signals. The acoustic filter may be integrated onto a single crystal silicon substrate with electrical circuity for performing acoustic signal processing functions required for applications such as speech processing and simulating the physiological function of the ear.
摘要翻译：每个具有对机械振动和/或声振动的特征共振频率响应的微机电梁的声学滤波器阵列。该阵列将输入的声信号划分成多个离散的频谱分量，每个离散频谱分量可以单独检测并转换成对应的电信号。声滤波器可以集成到具有电气电路的单晶硅衬底上，用于执行诸如语音处理和模拟耳朵的生理功能的应用所需的声信号处理功能。

10. 发明授权

US5846849A Microstructure and single mask, single-crystal process for fabrication thereof 失效
标题翻译：微结构和单掩模，其制造的单晶工艺
公开(公告)号：US5846849A
公开(公告)日：1998-12-08
申请号：US804826
申请日：1997-02-24
申请人： Kevin A. Shaw , Z. Lisa Zhang , Noel C. MacDonald
发明人： Kevin A. Shaw , Z. Lisa Zhang , Noel C. MacDonald
IPC分类号： C23F4/00 , B81B3/00 , G01P15/08 , G01P15/125 , H01L21/302 , H01L21/3065 , H01L29/82 , H01L29/84 , H01L21/44
CPC分类号： B81C1/00619 , B81C1/00142 , B81C1/0015 , B81C1/00626 , G01P15/0802 , G01P15/125 , B81C2201/0112 , B81C2201/0132 , B81C2201/053 , G01P2015/0814 , G01P2015/0817 , G01P2015/0828 , Y10S148/05 , Y10S73/01
摘要： A single mask, low temperature reactive ion etching process for fabricating high aspect ratio, released single crystal microelectromechanical structures independently of crystal orientation.
摘要翻译：用于制造高纵横比的单一掩模，低温反应离子蚀刻工艺，独立于晶体取向释放单晶微机电结构。

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