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    • 7. 发明授权
    • Methods of and apparatus for controlling polishing surface characteristics for chemical mechanical polishing
    • 用于控制化学机械抛光抛光表面特性的方法和设备
    • US07040954B1
    • 2006-05-09
    • US10952608
    • 2004-09-28
    • Simon McClatchiePeter NortonXuyen PhamRen Zhou
    • Simon McClatchiePeter NortonXuyen PhamRen Zhou
    • B24B49/18B24B53/00
    • B24B37/005B24B49/18
    • Apparatus and methods control CMP to uniformly polish a series of wafers. Average motor current I(avg) drawn by, and related average work W(avg) performed by, motors during CMP on the wafers reliably indicate quality of a roughness polishing characteristic of a polishing surface of a polishing pad. A conditioner controller controls a rate at which the quality of the polishing surface is restored by conditioning in relation to a rate of change of the quality of the polishing surface due to the CMP. Motor current is measured and averaged over many CMP-processed wafers. The method defines a baseline range of values of average work and controls conditioning according to whether average work is within the baseline range. When the polishing surface moves at constant velocity relative to each of the wafers that are being polished, a control signal based on average motor current represents the quality of the polishing characteristic.
    • 设备和方法控制CMP以均匀抛光一系列晶片。 平均电动机电流I(avg),以及在晶圆上的CMP期间电动机执行的相关的平均功率W(avg)可靠地指示抛光垫的抛光表面的粗糙度抛光特性的质量。 调节器控制器通过调节相对于由CMP引起的抛光表面的质量的变化率来控制抛光表面的质量恢复的速率。 在许多CMP处理的晶片上测量和平均电动机电流。 该方法根据平均工作是否在基线范围内定义了平均工作值和控制条件的基准范围。 当抛光表面相对于被抛光的每个晶片以恒定速度移动时,基于平均电动机电流的控制信号表示抛光特性的质量。